线阵碲镉汞探测器致损单元反常响应机理研究

分别对p-i-n和n-i-p两种结构的硅基光电探测器的背面离子注入层进行激光退火处理,辐照功率分别为0.5、1、1.25和1.5J/cm~2。根据激光退火激活载流子模式计算了载流子激活率,获得了载流子浓度和接触电阻的变化量。通过对比器件的电学和光学性能,发现采用1.5J/cm~2的激光,离子注入方式得到的硼离子和磷离子的激活率达到75.0%和92.6%,使得p-i-n和n-i-p结构器件的背接触电阻分别从未退火的22.3Ω和15.89Ω降低至7.32Ω和7.63Ω,显著改善了硅基光电探测器的正向特性。在100mV反向偏压下激光退火至少降低了10%的暗电流,并增强p-i-n结构峰值处约1%的光谱响应和n-i-p结构峰值处约5%的光谱响应。 更多还原     

提高硅纳米墙光电器件背部欧姆接触的超声修饰方法

提供了一种硅纳米墙结构器件的背面电极接触改善方法。通过利用超声的方法修饰金属催化法制备的硅纳米墙结构,并制备了AZO／硅纳米墙异质结光电器件。研究发现超声波可以对金属催化法制备的纳米硅墙进行单面修饰,与未经超声修饰的样品制备的器件相比,超声修饰能够改善硅纳米墙器件的背面电极欧姆接触,2 min的超声修饰可以将器件的串联电阻从587 Ω下降到082 Ω,填充因子提高86％,光电转换效率提高762％,提高了光电器件的载流子收集效率。     

AlGaN基p-i-n光电探测器负响应现象研究

对AlGaN基p-i-n光电探测器的负光电响应特性进行研究,从实验上证实了器件中p型接触电极的肖特基特性是导致该现象的主导因素.不同偏压下的响应光谱表明,这些AlGaN光伏器件中存在较为明显的光导响应特性.光照和暗背景条件下的C-f曲线验证了器件中的持续光电导特性,而高铝组分铝镓氮材料内存在的大量缺陷被认为是该现象的起因.系统地研究了AlGaN基p-i-n光电探测器存在的负响应现象及其微观机理,为铝镓氮基日盲器件光电性能的优化提供了重要参考依据.     

离子注入型蓝光灵敏的光电探测器

报道了离子注入CW CO_2 激光退火硅光电二极管的结果.激光退火工艺与热退火工艺进行了比较,表明这种器件具有峰值响应波长短、蓝光灵敏度高等优点.在波长为4000A时量子效率达0.64.通过测量结深、杂质浓度分布及缺陷的观测,解释了CW CO_2激光退火工艺优于热退火工艺的原因.     

GaN p-i-n紫外探测器的研制

研制了一种GaN p-i-n型单元器件,详细地讨论了该器件的制备工艺,并对该器件进行了光电性能测试.测试结果表明,器件的正向开启电压在2 V左右,零偏动态电阻R0约为1010～1011 Ω,最大峰值响应率在365 nm处为0.18～0.21 A/W,器件的上升响应时间和下降时间分别为2.8和13.4 ns.     

基于银纳米薄膜欧姆接触的高波长选择性紫外探测器研究

常规的半导体紫外探测器波长响应范围宽,而紫外光的应用具有较强的波长选择性,如320nm波段的紫外光在医学方面有重要的应用,因此,具有高波长选择性的紫外探测器的研制有重要意义。文章采用GaN基p-i-n探测器结构,通过在p区覆盖银纳米薄膜作为欧姆接触层和波长选择透射层,成功制备了对320nm波段紫外光高选择性探测的紫外探测器,器件性能如下:70nm银层的紫外光透射率峰值超过30%,器件在-5V偏压下的暗电流为10-12 A量级,响应峰值为0.06A/W,响应峰发生在325nm处,光谱响应峰半高宽约30nm。     

AlGaN基PIN光电探测器的模型与模拟

在漂移扩散方程的基础上建立了AlGaN p-i-n光电探测器的物理模型,分析了多种结构AlGaN p-i-n光电探测器的光谱响应,并讨论了AlGaN/GaN异质结界面极化效应对太阳盲区p-GaN/i-Al0.33Ga0.67N/n-GaN倒置异质结结构p-i-n光电探测器(inverted heterostructure photodetectors,IHPs)UV/Solar选择比(280rm与320nm响应度之比)的影响.结果表明:优化p层是提高器件光谱响应的有效途径;为获得较高的UV/Solar选择比,光伏模式(零偏压)为太阳盲区p-GaN/i-Al033Ga0.67N/n-GaN IHPs的最佳工作模式;在光伏模式下考虑极化效应影响时,Ga面p-GaN/i-Al0.33Gao.67N/n-GaN IHPs器件的UV/Solar选择比可达750,与Tarsa等人报道的三个量级的实验结果基本一致.     

硅基雪崩光电探测器倍增层掺杂的研究

硅基雪崩光电探测器的器件性能与倍增层的掺杂浓度有着密切联系。研究了硅基雪崩光电探测器倍增层的掺杂浓度对雪崩击穿电压和光谱响应度等特性的影响。在硼的注入剂量由5.0×1012 cm-2减小为2.5×1012cm-2时,倍增层内电场强度逐渐降低,吸收区电场强度迅速增大,器件的雪崩击穿电压由16.3V迅速上升到203V,而光谱响应在95%的击穿电压下,峰值响应波长由480nm红移至800nm,对应的响应度由11.2A/W剧增到372.3A/W。综合考虑光谱响应和雪崩击穿电压的影响,在硼注入剂量为3.5×1012 cm-2时,可获得击穿电压为43.5V和响应度为342.5A/W的器件模型,对实际器件的制备具有一定参考价值。     

离子注入型硅掺砷阻挡杂质带长波红外探测器的研究

研究了基于离子注入技术制备硅掺砷阻挡杂质带探测器的工艺,通过优化工艺条件和相关器件的结构与材料参数,制造了具有良好光电响应性能的长波红外探测器。在温度5 K,-3.8 V工作偏压下,探测器的峰值响应波长为23.8μm,黑体响应率为3.7 A/W,3.2 V时最大探测率为5.2×10~(13) cm·Hz~(1/2)/W。性能指标堪与文献报道的结果相媲美甚至更好,展示了离子注入工艺在制作阻挡杂质带探测器方面的潜在优势,特别是离子注入工艺与目前的微电子电路技术相兼容,能将探测器与读出电路集成到一块芯片上,在降低成本的同时提高探测器成像性能。     

锗近红外光电探测器制备工艺研究进展

Ge材料由于在近红外波段具有较大的吸收系数、高的载流子迁移率、以及与Si工艺相兼容等优势而被视为制备近红外光电探测器最理想的材料之一。针对Ge光电探测器制备过程中面临的挑战,文中综述了近年来笔者所在的课题组在Ge探测器材料、器件及工艺方面的研究进展。首先介绍了Si基Ge材料的制备工艺,利用低温缓冲层生长技术、Ge/Si键合技术、Ge浓缩技术等分别制备得到高晶体质量的Si基Ge材料。研究了Ge材料n型掺杂工艺,利用离子注入结合两步退火处理（低温预退火和激光退火）以及利用固态磷旋涂工艺等分别实现Ge材料n型高掺浅结制备。最后探究了金属/Ge接触势垒高度的调制方法,结合金属中间层和透明导电电极ITO制备得到性能良好的Ge肖特基光电探测器。     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks     

Call for Papers—Feature Topic,Vol.12,No.7,2015

正Information Centric Networking Information-Centric Networking(ICN) is an emerging direction in Future Internet architecture research,gaining significant tractions among academia and industry.Aiming to replace the conventional host-to-host communication model by a data-centric model,ICN treats data content as the first     

JOURNAL OF ELECTRONICS(CHINA)

正~~     

NEXT GENERATION WIRELESS NETWORKS–ESPECIALLY THE USE OF MILLI-MICROWAVE BANDS

The global bandwidth shortage of wireless communications has motivated the exploration of the naillimeter wave （ram-wave） frequency spectrum for the next generation wireless communications. Recent advances in RF CMOS technology and high speed baseband signal processing technologies have enabled tile extensive research and development of turn-wave wireless communications. The multi gigabit per second data rate of ram-wave system will lead to applications in many important scenarios, such as WPAN, WLAN,back-haul for cellular system. And the frequency bands include 28 GHz, 38 GHz, 45GHz, 60GHz, E-BAND and even beyond 100 GHz. The propagation and the imitation of the RF circuits design in these frequency bands make the directional antennas be inevitable for mm-wave communications.