Voltage-Polarity-Independent and High-Speed Resistive Switching Properties of V-Doped SrZrO3 Thin Films

In this paper, nonpolar resistive switching behavior is reported for the first time in a SZO-based memory device. The electrode materials used which have different conductivities affect the resistive switching properties of the device. The Al/V:SZO-LNO/Pt device shows nonpolar switching behavior, whereas the Al/V:SZO/LNO device has bipolar switching property. The resistance ratios of these two devices are quite distinct owing to the difference between the resistance of low resistance states. The Al/V:SZO-LNO/Pt device with lower resistive switching voltages (mnplus7 V turn on and mnplus2 V turn off) and higher resistance ratio is more suitable for practical applications compared to the Al/V:SZO/LNO device. The switching speed of the Al/V:SZO-LNO/Pt device is 10 ns, which is the fastest speed that has ever been reported. The conduction mechanisms, nondestructive readout property, retention time, and endurance of this device are also reported in this paper.     

Equivalent circuit models for resonant and PWM switches

The nonlinear switching mechanism in pulsewidth-modulated (PWM) and quasi-resonant converters is that of a three-terminal switching device which consists only of an active and a passive switch. An equivalent circuit model of this switching device describing the perturbations in the average terminal voltages and current is obtained. Through the use of this circuit model the analysis of pulsewidth modulated and quasiresonant converters becomes analogous to transistor circuit analysis where the transistor is replaced by its equivalent circuit model. The conversion ratio characteristics of various resonant converters and their relationship to a single function, called the quasi-resonant function, is easily obtained using the circuit model for the three-terminal switching device. The small-signal response of quasi-resonant converters to perturbations in the switching frequency and input voltage is determined by replacing the three-terminal switching device by its small-signal equivalent circuit model     

A novel amorphous silicon doping superlattice device with doubleswitching characteristics for multiple-valued logic applications

An amorphous silicon doping superlattice device with different period lengths is developed, providing a double switching characteristic that has been demonstrated to yield multiple stable states for multiple-valued logic applications. Unlike those of conventional switching devices, the switching characteristics of the present device are caused by avalanche multiplication and a barrier-lowering effect. A tristate memory cell using this device is proposed and discussed     

Switching in polymeric resistance random-access memories (RRAMS)

Resistive switching in aluminum-polymer-based diodes has been investigated using small signal impedance measurements. It is shown that switching is a two-step process. In the first step, the device remains highly resistive but the low frequency capacitance increases by orders of magnitude. In the second step, resistive switching takes place. A tentative model is presented that can account for the observed behavior. The impedance analysis shows that the device does not behave homogenously over the entire electrode area and only a fraction of the device area gives rise to switching.     

Modeling of ionizing radiation effect on optoelectronic-integrated devices (OEIDs)

The ionizing radiation effect on the static and dynamic behavior of an optoelectronic-integrated device composed of a hetrojunction phototransistor and light-emitting diode is studied theoretically. First, the device characteristics before irradiation are investigated based on the equivalent circuit of the constituent devices and the optical feedback inside the device. Second, the effect of neutron irradiation flux on transient behavior of this device is theoretically studied. It was noticed that, the neutron irradiation flux reduces the transient response in both the amplification and switching modes. Also, neutron irradiation flux increases the switching voltage of the device and decreases the output current, this means that the ON state device which exposed to this irradiation flux will turn to the OFF state because it will need higher value of switching voltage. Either increasing the amount of input light or the applied voltage is required to turn the device to the ON state again. This type of models can be exploited as optical amplifier, optical switching device and other applications.     

A Novel Switching Sequence Design for Five-Level NPC/H-Bridge Inverters With Improved Output Voltage Spectrum and Minimized Device Switching Frequency

This paper presents a novel switching sequence design for the space-vector modulation of high-power multilevel converters. The switching sequences are optimized for the improvement of harmonic spectrum and the minimization of device switching frequency. Compared to other commonly used switching sequences, the output spectrum of the proposed design shows higher inverter equivalent switching frequency. Meanwhile, the device switching frequency is reduced by using a flexible switching pattern. The proposed switching sequence has been simulated and experimentally tested on a 5-level neutral point clamped H-bridge based inverter. The results from both simulations and experiments consistently verify the above-mentioned features.     

Enhanced inverter switching for fast response direct torque control[of induction motor drives]

In classical direct torque control (DTC), an inverter switching event can occur once in each control update period. Because the nature of the inverter switching event is unconstrained, it is essential to limit the inverter switching frequency, and hence the control update period, to ensure that under no circumstances is the allowable switching frequency of any individual power device exceeded. Consequently the switching capability of individual power devices is generally under-utilized, and the control scheme produces high levels of ripple in the motor current and torque. This paper describes a new strategy for device switching and voltage vector selection in DTC. The basis of the strategy is an increase in the control update frequency, while limiting the switching rate of each inverter leg. Although the rate at which device switching events may occur is unchanged, the higher control update frequency leads to higher resolution timing of switching events. The advantages of the strategy, demonstrated by experimental results on a 3 kW induction motor drive, are a significant reduction in the steady-state torque ripple as well as a faster transient response     

Fast bistable wavelength switching characteristics in two-electrodedistributed feedback laser

Fast bistable wavelength switching between two longitudinal modes separated by 1.7 nm was achieved in a two-electrode distributed feedback laser with inhomogeneous excitation. As a result, a fast wavelength switching time less than 200 ps was observed in this device. In addition, high-speed repetitive wavelength switching operation up to 1 GHz was achieved. This indicates that the device is capable of repetitive wavelength switching within 1 ns, including delay time and rise time     

接触网短路热循环实验多路温度测量开关切换装置

讨论了一种基于89C51的多路开关切换装置的实现方法.使用该装置可以对接触网短路热循环实验各个测温点进行循环测量.该装置具有完善的串行通信功能,在PC机上使用C Builder6.0设计图形用户界面的控制软件,与多路开关装置进行串口通信,可以对开关切换的过程进行显示与控制.     

A bistable MOSFET-type metal-tunnel insulator-semiconductor switch

A new lateral bistable switching structure including an ultra-thin tunnel oxide is presented. The device has an S-type negative resistance characteristic similar to that of a thyristor. Switching between the two stable states is controlled by a MOS-type gate. The device exhibits linear gate control of the switching voltage, a property not shown by other thin-oxide switching structures. The gate can also be used to turn the device off because of variation in the holding current with gate bias.     

Binary-decision-diagram device

The device proposed here for future LSI's is based on a concept different from the Boolean equations usually used for representing digital functions. The unit function of this device is simple two-way switching and can be implemented utilizing various physical effects, such as optical switching, electron-wave modulation, and single-electron transport. Several possible device structures are presented, and a simulated result for a single-electron device is described     

光交换技术的发展趋势

本文根据国内外近十年来发表的光交换器件及光交换系统方面的文献对光交换技术的发展趋势加以综述。本文把光交换器件分为两大类,即光相关器件与光逻辑器件,并举例加以说明。对光交换系统则分为空分交换,时分交换及波分交换三大类予以叙述。并指出三维交换矩阵的开发可能是光交换技术独立于电子交换技术的一种新模式,利用光传输在时空上的特点,估计在近几年内光交换技术还会有新的突破。     

A new AlGaAs/GaAs/InAlGaP npn bulk-barrier optoelectronic switch

Two-terminal switching performance is observed in a new AlGaAs/GaAs/InAlGaP optoelectronic device. The device shows that the switching action takes place from a low current state to a high current state through a region of negative differential resistance (NDR). The transition from either state to the other may be induced by an appropriate optical or electrical input. It is seen that the effect of illumination increases the switching voltage V/sub S/ and decreases the switching current I/sub S/, which is quite different from other results reported. In addition, it possesses obvious NDR even up to 160/spl deg/C. This high-temperature performance provides the studied device with potential high-temperature applications.     

Unclamped inductive switching behaviour of high power SOI vertical DMOS transistors with lateral drain contacts

The switching dynamics of silicon-on-insulator (SOI) high power vertical double diffused MOS (VDMOS) transistors with an inductive load has been investigated by device simulation. Unlike other conventional VDMOS devices, this device has drain contacts at the top surface. In general the switching behaviour of a power device during the unclamped inductive switching (UIS) test will determine the reliability of the power device as the energy stored in the inductor during the on state is dumped directly into the device when it is turned off. In this paper we compare the switching dynamics of the SOI VDMOS transistor with standard bulk silicon VDMOS device by doing numerical simulations. It is shown here, using 2D-device simulations that the power dissipated in the SOI VDMOS device during the UIS test is smaller by approximately a factor of 2 than in the standard bulk silicon VDMOSFET. The lower dissipation is due to the presence of the silicon film/buried oxide/substrate structure (this structure forms a SOI capacitor). In the case of the SOI VDMOS transistor the energy released from the inductor during the UIS test is stored to some extent in the SOI capacitor and partly dumped directly into the device. As a result the maximum current through the SOI device is separated in time from the maximum voltage across the device, unlike in the bulk case, thereby reducing the maximum power.     

Design considerations of IGBT's in resonant converter applications

The switching dynamics of insulated gate bipolar transistors (IGBT's) in zero voltage switching (ZVS) resonant converter applications is studied and optimized using an advanced mixed device and circuit simulator. It is shown that bipolar and MOS device parameters must be carefully optimized to obtain the lowest total power loss. A simple circuit simulation model was used in an advanced behavioral circuit simulator where the model parameters were extracted from mixed device and circuit simulations. Performance analysis of a typical series resonant converter (SRC) shows that ZVS condition is more favorable than the zero current switching (ZCS) condition from the standpoint of obtaining efficient power conversion. It is shown that IGBT's with narrower source result in lower total switching power loss     

A two-stage DC thyristor circuit breaker

High-current DC thyristor circuit breaker (TCB) devices, based on the parallel capacitor-current commutation-forced turn-off principle, require very large capacitors to effect correct operation as fault-current interrupters in electrical circuits. The commutation capacitors of TCB devices that interrupt current in a single switching operation absorb virtually all the electromagnetic energy stored in circuits, where they operate during the single switching process. These device types interrupt current extremely fast, but because of the scale of the energy transfer to the commutation capacitor, they are especially prone to producing short-duration switching overvoltages of excessive magnitude. A novel TCB device involving two switching operations or stages is presented and analyzed. With this device type, the circuit-stored energy is transferred to the commutation capacitor in two stages, which, in so doing, produces significantly lower switching overvoltages than the conventional “single-stage” TCB device. Results of a range of tests on a low-voltage two-stage TCB device and a high-power-prototype version are given together with the basis for determining their optimum design criteria. Comparative simulation studies are also provided. Finally, the limitations of TCB devices are examined and discussed in conjunction with cost comparisons and their merits and limitations for typical applications     

Monolithically integrated photonic switching device using an MSMPD, MESFETs, and a VCSEL

We have fabricated a photonic switching device that monolithically integrates a metal-semiconductor-metal photodetector, metal-semiconductor field-effect transistors, and a vertical-cavity surface-emitting laser. This device can perform both NOR- and OR-types of operation with thresholding input-output characteristics. The contrast ratio is more than 30 dB with optical gain. The device also shows a 3-dB bandwidth of 220 MHz and switching energy of 700 fJ at a 100-MHz frequency     

An organic multilevel non-volatile memory device based on multiple independent switching modes

The demand for higher data density memory structures is greater today than ever before. Multilevel resistive organic memory devices (OMD) provide an ideal solution, in being easily fabricated, cost-effective and at the same time promising high storage capacity. However, conventional methods for multilevel OMDs impose demanding requirements on material properties and attain only limited performance. We hereby provide an alternative design concept that combines multiple switching modes in one device to realize multilevel function. The device possesses a simple structure by using a ferroelectric phase-separated blend as the active layer. Two switching modes, the ferroelectric switching and the metallic filament switching, are realized simultaneously in this device, and enable a ternary storage function. The cross-section scanning electron microscope (SEM) images provide a strong evidence of the formation and annihilation of the metallic filament.     

A switching lateral transistor

A switching phenomenon has been reported in certain lateral geometry transistors in silicon integrated circuits. These devices switch between conducting and nonconducting states at a critical value of VCE. A hypothesis for the mechanism has been proposed. In this paper an equivalent circuit is developed for the switching lateral transistor and is used to predict transistor behavior. The effect of manufacturing tolerances on the device switching voltage is investigated and a technique of production control is proposed. Circuits using the device are described in which the circuit switching voltage may be varied over a wide range. Some applications of the switching lateral transistor, as an overvoltage protection circuit and a relaxation oscillator, are described.     

A novel trench-injector power device with low ON resistance andhigh switching speed

A power MOSFET device structure that has been developed to optimize the tradeoff between ON resistance and switching speed is discussed. The device structure features a trench injector that injects a controlled quantity of minority carriers into the drift path of the MOSFET current to modulate the conductivity of the device during the ON state. The conductivity-modulated MOSFET device (CMDMOS) has been fabricated and characterized. The device structure has demonstrated low ON resistance and high switching speed. It can be implemented along with logic circuitry to allow programmable electrical control of the switching-speed/ON-resistance tradeoff