基于改进差分进化算法的连续小波变换电路

提出一种基于改进差分进化算法和开关电流微分器的连续小波变换实现的新方法。引入混沌初始化种群、自适应变异和指数递增交叉概率因子,提高差分进化算法的收敛速度和精度,构造小波函数逼近模型,并利用改进差分进化算法,求得小波逼近函数及频域传递函数。采用开关电流微分器作为基本单元,设计冲激响应为小波逼近函数的开关电流滤波器组,通过调节小波滤波器的时间常数,获得多尺度小波函数,实现连续小波变换。实验结果表明该方法可行。     

基于CMOS对数域积分器的小波变换模拟VLSI实现

提出了一种基于CMOS对数域积分器的连续Marr小波变换模拟VLSI实现方法.构造了Marr母小波时域逼近函数模型,用Levenbery-Marquardt非线性最小二乘法求解模型参数最优解,得到母小波逼近函数.设计了以CMOS对数域积分器为积木块的小波变换电路,该电路由冲激响应为母小波逼近函数及其伸缩函数的滤波器组构成,滤波器组采用低灵敏度的IFLF结构进行综合.SPICE仿真结果表明该方法的可行性.     

小波变换开关电流电路CAD设计

用开关电流技术实现小波变换,关键是小波滤波器的实现;小波滤波器传输表达式可通过对小波基函数的有理逼近来获得。基于Padé逼近的方法,采用高斯函数族作为小波基函数,对所选的高斯函数进行频域的有理分式逼近来获取小波滤波器传输表达式,从数学上提出一种设计小波变换开关电流(SI)滤波器的CAD方法。结合SI的电流模信号特点,利用双二次滤波器的性质,用SI单元电路的级联结构来实现电路的灵活设计。设计举例给出了设计思路,MATLAB仿真结果显示这种方法的可行性。     

高斯小波变换的开关电流电路实现

提出了采用开关电流电路技术实现连续高斯小波变换的方法.建立了逼近高斯母小波的优化参数模型,用非线性最小二乘法求解模型参数最优解.设计了以开关电流积分器为积木块的小波变换电路,该电路由冲激响应为母小波逼近函数及其伸缩函数的滤波器组构成.此方法对于小波变换的模拟VLSI实现具有一定的理论价值与实际意义,仿真结果表明该方法的可行性.     

一种多功能可调开关电流双二次滤波器的实现

采用改进的Class AB开关电流(SI)存储单元设计了差分结构双线性SI积分器,由此积分器和栅极接地Class AB电流乘法器作为基本模块,设计了SI双二次滤波器.电路实现了低通(LP)、带通(BP)和高通(HP)滤波器,其截止频率ωo和Q值可通过外部直流电流连续调节.仿真结果表明设计的电路具有良好的滤波和可调性能.     

基于开关电流电路的小波变换实现

本文提出了用开关电流实现连续小波变换的一种方案,用Legendre基数代替经典Padé逼近中的函数序列｛xi:i=1,2,3…}来逼近小波函数,并利用开关电流电路实现该小波函数滤波器,理论分析和仿真结果证实了该方案的可行性.     

基于开关电流技术的小波变换的设计与实现

用开关电流技术实现小波变换的关键是实现小波滤波器,小波滤波器的传输函数可通过对小波基函数的有理逼近获得.采用高斯函数1阶导数作为基本小波,用Padé变换获得其有理分式逼近,利用开关电流技术实现小波滤波器,并得到小波变换所需的基本小波及其膨胀小波.用Cadence Spectre对该小波滤波器进行仿真,仿真结果验证了小波滤波器的良好特性.     

Marr小波变换的模拟开关电流技术实现

本文提出了用开关电流技术实现Marr小波变换的一种简单有效的方法,充分利用数学领域中功能强大的泰勒定理在频域中逼近Marr小波,并利用开关电流技术系统化模块化的优势从电路级上实现逼近的数学模型.文章通过尺度为1的Marr小波的设计仿真过程验证了这种设计方法的正确性.     

基于IIR数字网络的开关电流电路小波变换方法

提出了一种基于无限冲激响应(IIR)数字网络结构的开关电流电路小波变换方法。结合时域直接法和非线性最小二乘法,构造高精度小波滤波器逼近函数。通过采样离散化和标准Z变换,将小波逼近函数转换成离散域传递函数。基于IIR数字网络,设计开关电流1阶节和2阶节电路模块,以此综合小波滤波器电路。以5阶高斯小波变换电路为例进行说明,理论分析和仿真结果验证了方法的有效性。     

基于开关电流技术的时域连续小波变换实现

首次提出基于开关电流技术的时域法连续小波变换实现。该方法利用幅度调制技术产生小波链实现小波变换,为小波变换的快速实现提供了新的途径。基于双线性变换采用开关电流积分器综合实现低通滤波器,解决了时域法小波变换实用电路集成化的关键问题。对开关电流低通滤波器用ASIZ进行仿真,结果证实其性能完全满足实用要求。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks