C-V characterization of SF6 plasma treated AlGaN/GaN heterostructures

We studied influence of SF₆ plasma treatment on electrical parameters of AlGaN/GaN heterostructures by C-V, I-V and SIMS measurement. We found the C-V measurements as an effective tool that is able to help to analyze electrical manifestations of charge changes in heterostructures during the semiconductor processing. In contrary to previously published results we found out that for diminishing of the two-dimensional electron gas concentration in the channel layer positively charged ions implanted during the plasma treatment into the semiconductor and not F⁻ ions are responsible.     

AC response analysis of C-V curves and quantitative analysis of conductance curves in Al2O3/InP interfaces

The ac signal response of majority carriers has been systematically investigated for Al₂O₃/InP metal-insulator-semiconductor (MIS) interfaces using C-V and the conductance methods. It was revealed by the conductance curve fitting that both slow trap and interface trap responses contribute to a conductance curve at the Al₂O₃/InP interfaces in the depletion bias condition, and that the contribution of slow trap response and large surface potential fluctuation make it difficult to obtain a clear conductance peak. It was found that the conductance curves in high frequency region can be represented by the surface potential fluctuation model. This means that the analysis through the conductance curve fitting is effective in characterizing III-V MIS interfaces.     

Robust mixed ℋ2/ℋ∞ filteringof 2-D systems

This paper deals with several challenging problems of robust filtering for two-dimensional (2-D) systems. First of all, new linear matrix inequality (LMI) characterizations for the ℋ_∞ and ℋ2 norms of 2-D systems are introduced and thoroughly established. Based on these preparatory results, convex (LMI) characterizations for robust ℋ_∞, ℋ₂, and robust mixed ℋ₂/ℋ_∞ filtering are derived. The efficiency and viability of the proposed techniques and tools are demonstrated through a set of numerical examples     

Antenna control systems: from PI to H∞

This paper discusses the compensation of antenna-pointing errors following the analysis and retrofit of the NASA Deep Space Network antenna control systems. The desired high-frequency communications with spacecraft (at Ka-band) require improved pointing precision over lower-frequency communications (at X-band). The quality of the antenna drives (hardware), the control algorithm (software), and the physical structure of the antenna (in terms of thermal deformations, gravity distortions, encoder mounting, and wind gusts) all influence pointing precision, and create the challenging task of remaining within the required pointing-error budget. Three control algorithms-PI (proportional-and-integral), LQG (linear-quadratic-Gaussian), and H_∞-are discussed, and their basic properties, tracking precision, and limitations as applied to antenna tracking are addressed. The paper shows that the PI algorithm is simple and reliable, but its performance is limited. It also explains how significant improvements in tracking precision are achieved when implementing the LQG control algorithm or the H_∞ control algorithm. Still, pointing precision attributable to software modification is limited. It is pointed out that an additional increase of tracking precision requires concurrent improvements in the antenna drives     

The C-V-f and G/ω-V-f characteristics of Al/SiO2/p-Si (MIS) structures

The frequency dependence of capacitance-voltage (C-V) and conductance-voltage (G/ω-V) characteristics of the Al/SiO₂/p-Si metal-insulator-semiconductor (MIS) structures has been investigated taking into account the effect of the series resistance (R_s) and interface states (N_ss) at room temperature. The C-V and G/ω-V measurements have been carried out in the frequency range of 1 kHz to 1 MHz. The frequency dispersion in capacitance and conductance can be interpreted only in terms of interface states and series resistance. The N_ss can follow the ac signal and yield an excess capacitance especially at low frequencies. In low frequencies, the values of measured C and G/ω decrease in depletion and accumulation regions with increasing frequencies due to a continuous density distribution of interface states. The C-V plots exhibit anomalous peaks due to the N_ss and R_s effect. It has been experimentally determined that the peak positions in the C-V plot shift towards lower voltages and the peak value of the capacitance decreases with increasing frequency. The effect of series resistance on the capacitance is found appreciable at higher frequencies due to the interface state capacitance decreasing with increasing frequency. In addition, the high-frequency capacitance (C_m) and conductance (G_m/ω) values measured under both reverse and forward bias were corrected for the effect of series resistance to obtain the real diode capacitance. Experimental results show that the locations of N_ss and R_s have a significant effect on electrical characteristics of MIS structures.     

Authors' Reply to “Comments on `A New Model of Two Directional Jc Distributions for Bi2Sr 2CaCu2 O8 Materials'”

The authors agree to the point made by Nadarajah, et. al. that the model that employs the mixture of Gaussian distributions is not a new idea. However, the mixtures of Gaussian distribution was only used to clarify the relationship between the local critical current density (J_c) distribution and the microstructure of the samples to successfully explain the relationship between the local J_c distribution and the microstructure of the Bi2212 materials. Because the local J_c distributions are directly connected to the electric fields versus current density (E-J) characteristics, the model permits the interpretation of the complicated E-J properties by means of the microstructures.     

Al/W/TiNx/TiSiy/Si barrier technology for1.0-μm contacts

A reliable contact diffusion barrier has been successfully formed by sintering in nitrogen a physically sputtered W/Ti bilayer. After a 650°C furnace anneal, a TiN_x/TiSi_y layer on contact with the silicon substrate was formed beneath the overlying W. No reaction between N₂ and W was observed. Arsenic implanted in the silicon substrate tended to retard the silicidation of titanium. Substantial redistribution of both B and As across the silicide layer was also observed during the contact sintering process. The 1.0-μ contacts fabricated with the Al/W/TiN_x/TiSi_y/Si barrier technology exhibited low and tightly distributed contact resistivities (less than 10^-6 Ω-cm²). No excessive leakage of the shallow junctions was observed even after thermally stressing the sample at 400°C for 8 h     

Characterization of current-voltage (I-V) and capacitance-voltage-frequency (C-V-f) features of Al/SiO2/p-Si (MIS) Schottky diodes

The current-voltage (I-V) characteristics of metal-insulator-semiconductor Al/SiO₂/p-Si (MIS) Schottky diodes were measured at room temperature (300 K). In addition, capacitance-voltage-frequency (C-V-f) characteristics are investigated by considering the interface states (N_ss) at frequency range 100 kHz to 1 MHz. The MIS Schottky diode having interfacial insulator layer thickness of 33 Å, calculated from the measurement of the insulator capacitance in the strong accumulation region. At each frequency, the measured capacitance decreases with increasing frequency due to a continuous distribution of the interface states. From the I-V characteristics of the MIS Schottky diode, ideality factor (n) and barrier height (Φ_b) values of 1.766 and 0.786 eV, respectively, were obtained from a forward bias I-V plot. In addition, the interface states distribution profile as a function of (E_ss − E_v) was extracted from the forward bias I-V measurements by taking into account the bias dependence of the effective barrier height (Φ_e) for the Schottky diode. The diode shows non-ideal I-V behaviour with ideality factor greater than unity. This behaviour is attributed to the interfacial insulator layer, the interface states and barrier inhomogeneity of the device. As expected, the C-V curves gave a barrier height value higher than those obtained from I-V measurements. This discrepancy is due to the different nature of the I-V and C-V measurement techniques.     

距离选通激光成像空间定位模糊C均值聚类分割法

针对距离选通激光成像对比度低、照度不均、图像模糊的特点,提出了一种基于空间定位的模糊C均值聚类方法（SPFCM）对目标进行分割。传统的模糊C均值聚类法存在以下缺点:一是需要预先获得目标分类数量,自适应性较差;二是对空间信息不敏感,导致目标轮廓不完整以及错误分类。针对上述缺陷,文中对传统算法进行了改进,引入了初定位的概念,首先利用最大类间方差法（Otsu 法）和数学形态学工具对子目标进行初步定位,再将其形心方位信息和灰度信息融合到聚类过程中,以较短的迭代过程实现不同目标的归类。实验结果证明基于空间定位的模糊C均值聚类法可以完整、有效地对距离选通激光图像进行提取分割,处理时间优于传统FCM。     

Interpretation of C-V measurements for determining the doping profile in semiconductors

The well-known C-V technique for determining the doping profile in semiconductors is reexamined. A simplified model is developed, which takes into account the effect on the C-V characteristics of the diffusion potential in the quasi-neutral region of the semiconductor. This model leads analytically to the same conclusion inferred by Kennedy et al. from a few numerical examples, i.e. the zeor-bias majority carrier concentration, instead of the impurity profile, is provided by the expression (C³/q?_s) · (dC/dV)^?1. Parametric formulae for the C-V characteristic are proposed in excellent agreement with some results of a numerical analysis.     

H∞ control versus disturbance-observer-basedcontrol

In the motion control field, a disturbance observer-based disturbance canceling control is often used as a robust control methodology. However, this method is nothing more than an alternative design of an integral controller, and the robust stability issue cannot be directly accounted for. In this paper, an extended H_∞ control scheme is proposed as a new robust motion control method which achieves the disturbance cancellation ability and guarantees robust stability automatically     

混响室中混响时间测量测点位置的探讨

在分析了混响室中引起混响时间测量随机误差之后,提出将测点置于混响室角点上,这是更为合理的测量方法。     

Photoreflectance of InSb/GaAs heterostructures at E1 andE1+Δ1 transitions

The photoreflectance spectra of InSb/GaAs heterostructures at the E₁ and E₁+Δ₁ transitions have been measured as a function of layer thickness. The spectra show an increase in lineshape broadening, similar to that observed in the increase in FWHM of the X-ray diffraction peaks, as the film thickness decreases. The data indicate increased crystal quality with increasing layer thickness. The results show that photoreflectance can be used as a tool to study the structural quality of lattice-mismatched heterostructures     

Tunable UV generation to 0.185 μm inCsB3O5

CsB₃O₅ has been found to be phase matchable for SFG down to 0.185 μm by mixing the fifth harmonic of a Nd:YAG laser at 1.0642 μm and the output of a KTP parametric oscillator pumped by the second harmonic of the same Nd:YAG laser at 20.0°C. Improved Sellmeier's equations and nonlinear optical constant of this crystal are reported     

Cathodoluminescence assessment of GaAs1−x Px for light emitting diodes

The room temperature cathodoluminescence (CL) properties of selenium doped epitaxial layers of GaAs_1−xP_x, in the composition range 0·35 < x < 0.45, have been examined as a function of the Hall electron concentration. Material selected for this investigation had less than 2 per cent of the total CL emission in the i.r. For a fixed alloy composition the CL intensity is shown to increase with increasing electron concentration, while for a fixed electron concentration the intensity decreases with increasing GaP content. These results have been correlated with the electroluminescent efficiencies of zinc diffused diodes fabricated from the same material. It is shown that CL provides a rapid and reliable means of assessing the composition and emitting efficiency of epitaxial layers for use in the fabrication of light emitting diodes.     

Dual H∞ Algorithms for Signal Processing— Application to Speech Enhancement

This paper deals with the joint signal and parameter estimation for linear state-space models. An efficient solution to this problem can be obtained by using a recursive instrumental variable technique based on two dual Kalman filters. In that case, the driving process and the observation noise in the state-space representation for each filter must be white with known variances. These conditions, however, are too strong to be always satisfied in real cases. To relax them, we propose a new approach based on two dual H_infin filters. Once a new observation of the disturbed signal is available, the first H_infin algorithm uses the latest estimated parameters to estimate the signal, while the second H_infin algorithm uses the estimated signal to update the parameters. In addition, as the H_infin filter behavior depends on the choice of various weights, we present a way to recursively tune them. This approach is then studied in the following cases: (1) consistent estimation of the AR parameters from noisy observations and (2) speech enhancement, where no a priori model of the additive noise is required for the proposed approach. In each case, a comparative study with existing methods is carried out to analyze the relevance of our solution.     

New approximations to J0 and J1 Besselfunctions

New approximate solutions to the 0th- and 1st order Bessel functions of the first kind are derived. The formulations are based upon using a new integral with no previously known solution. The new integral in the limiting case is identical to the 0th-order Bessel function integral. It is solved in closed form, and the solution is expressed as a simple even order polynomial with integer coefficients. The polynomial coefficients are all of integer value. The 1st-order Bessel function approximation can then be found through a simple derivative. Comparisons are made between the exact solution, classic solutions, and the new approximation. The new approximation proves to be much more accurate than the classic small argument approximation. It is also sufficiently accurate to bridge the gap between the classic large and small argument approximations and has potential applications in allowing one to analytically evaluate integrals containing Bessel functions     

A study of the linearity between Ion and log Ioff of modern MOS transistors and its application to stress engineering

The authors observed that the on-current (I_on) and the logarithm of the off-current (log(I_off)) of modern submicron MOS transistors tend to follow a very good linear relationship. This paper shall provide a tentative explanation on this experimentally observed linear relationship. Our experimental data show that I_on has a very good linear relationship with drain induced barrier lowering (DIBL). Similarly, log I_off has a very good linear relationship with DIBL. Thus, the mathematical elimination of DIBL will imply a very good linear relationship between I_on and log I_off. Finally, we will demonstrate the application of our theory to both n-channel and p-channel MOS transistors with and without tensile stress.     

A new two-dimensional C-V model for prediction of maximum frequency of oscillation (fmax) of deep submicron AlGaN/GaN HEMT for microwave and millimeter wave applications

An analytical two-dimensional capacitance-voltage model for AlGaN/GaN high electron mobility transistor (HEMTs) is developed, which is valid from a linear to saturation region. The gate source and gate drain capacitances are calculated for 120 nm gate length including the effects of fringing field capacitances. We obtain a cut-off frequency (f_T) of 120 GHz and maximum frequency of oscillations (f_max) of 160 GHz. The model is very useful for microwave circuit design and analysis. Additionally, these devices allow a high operating voltage V_DS, which is demonstrated in the present analysis. These results show an excellent agreement when compared with the experimental data.     

Mixed H2/H∞ filtering design inmultirate transmultiplexer systems: LMI approach

A mixed H₂/H_∞ filter design is proposed for multirate transmultiplexer systems with dispersive channel and additive noise. First, a multirate state-space representation is introduced for the transmultiplexer with the consideration of channel dispersion. Then, the problem of signal reconstruction can be regarded as a state estimation problem. In order to design an efficient separating filterbank for a transmultiplexer system with uncertain input signal and additive noise, the H_∞ filter is employed for robust signal reconstruction. The H₂ filter design is considered to be a suboptimal approach to achieve the optimal signal reconstruction in transmultiplexer system under unitary noise power. Finally, a mixed H₂/H_∞ filter is proposed to achieve a better signal reconstruction performance in transmultiplexer systems. These design problems can be transformed to solving the eigenvalue problems (EVP) under some linear matrix inequality (LMI) constraint. The LMI Matlab toolbox can be applied to efficiently solve the EVP by convex optimization technique