Fabrication and characterization of a low frequency electromagnetic energy harvester

This paper presents the fabrication and characterization of an AA size electromagnetic energy transducer based on vibration. A magnetic spring technique is used to scavenge energy from low frequency external vibration. The output of the harvester is maximized by optimizing the mass of moving and fixed magnets, coil width, coil position and load resistance through a comprehensive experimental analysis. The prototype can generate an open circuit voltage of 3.961 V and 1.18 mW average power at a load resistance of 97 Ω with 9 Hz resonance frequency and 0.5 mm displacement.     

Synthesis,characterization and in vitro cytotoxicity study of calcium ferrite nanoparticles

In the present paper, calcium ferrite nanoparticles have been synthesized by the sol–gel method. The orthorhombic structure of calcium ferrite nanoparticles has been revealed by X-ray diffractometry. The morphology and size (5–10 nm) of the synthesized nanoparticles have been observed by scanning electron microscopy and transmission electron microscopy, respectively. Fourier transform infrared spectroscopy and thermogravimetric analysis have been studied, in order to ensure absence of impurities. The magnetic analysis has been studied by vibrating sample magnetometer, where the superparamagnetic behavior with saturation magnetization of 36.4 emu/g was observed. In vitro cytotoxicity test on T cell lines (Jurkat cells) using MTT (3-(4, 5-Dimethylthiazol-2-yl)-2, 5-diphenyltetrazolium bromide, a tetrazole) assay revealed the biocompatibility of the synthesized calcium ferrite nanoparticles at particle concentration below 250 µg/ml.     

镍掺杂W型铁氧体的制备及电磁性能研究

采用固相球磨法,制备了镍掺杂W型铁氧体Ba(Zn1-xNix)Fe16O27粉体。利用XRD及SEM分析了所制粉体的相组成及形貌,用微波网络分析仪对镍掺杂W型铁氧体粉体的微波电磁性能进行了研究。结果表明:1300℃时,生成了W型铁氧体相,形成了较完整的平面六角片状结构。在2～18GHz频段,随着Ni掺杂量的增加,W型铁氧体的ε'、μ'和μ"的值随之增大,在镍掺杂量达到最大时(x=1.0),磁损耗达到最大。     

Bi_2O_3对自燃烧法合成NiZnCu铁氧体的显微结构与性能的影响

以金属硝酸盐和柠檬酸为原料 ,应用溶胶 -凝胶法与自燃烧结合的方法制备了 Ni Zn Cu铁氧体微细粉。文章主要讨论了溶胶 -凝胶与自燃烧法结合制备 Ni Zn Cu铁氧体粉末的新方法 ,对 Bi2 O3掺杂的低温烧结 Ni Zn Cu铁氧体从烧结性质、结构与相组成、显微形貌、磁性质方面进行了研究 ,在此基础上分析了 Bi对材料形成过程和磁化机制的影响 ,并解释了掺杂量对材料磁性能的综合作用     

二磨时间对MnZn铁氧体结构和磁性能的影响

采用氧化物陶瓷工艺制备MnZn功率铁氧体,研究二次球磨时间对MnZn功率铁氧体微观结构和磁性能的影响.通过对铁氧体断面微观形貌的表征及密度、电阻率和磁特性的测试,结果表明,随着二次球磨时间的延长,MnZn功率铁氧体的密度、起始磁导率、饱和磁感应强度及电阻率均先增大后减小,损耗则先减小后增大.当二次球磨时间为2 h时,密度、起始磁导率、饱和磁感应强度及电阻率均达到最大值,总损耗最小且在25～120 ℃宽温范围内均低于350 kW/m~3.     

Synthesis,characterization and conducting properties of novel poly (vinyl cinnamate)/zinc oxide nanocomposites via in situ polymerization

New polymer nanocomposite based on poly (vinyl cinnamate) (PVCin) with zinc oxide (ZnO) was synthesized by in situ polymerization of vinyl cinnamate with different concentrations of ZnO nanoparticles. The composite was characterized through FT-IR, FT-Raman, UV spectroscopy, XRD, HRTEM, FE-SEM, DSC, TGA and electrical conductivity studies. The IR, Raman and UV spectra ascertained the structural variation of PVCin network by the insertion of nanoparticles within the polymer segment. The morphological studies by TEM and FE-SEM photographs indicate that the nanopowder was uniformly dispersed in the polymer. The presence of nanoparticles in the nanocomposite was clearly observed from the XRD studies and the ordered arrangement of nanoparticles within the macromolecular chain of PVCin increased with increase in concentration of nanofillers. DSC results showed that the glass transition temperature and crystalline melting point were increased smoothly with the increase in concentration of nanoparticles. Analysis of TGA studies showed a significant increase in thermal stability with an increase in weight percentage of nanoparticles. The DC conductivity of nanocomposite was increased by ten orders of magnitude with the addition of 7 wt% of nano ZnO inclusion. AC conductivity, dielectric constant and dielectric loss tangent of nanocomposite was remarkably increased with increase in ZnO content up to 7 wt% of filler particles. Both AC and DC conductivity and dielectric properties were decreased beyond 7 wt% loading.     

电器电磁机构动态特性实验系统的开发与教学实践

本文以“电器理论基础”课程创新性实验教学为背景,提出了一种电器电磁机构动态特性的实验方法和装置。实验系统可使学生深入理解电磁机构的动态特性及其影响因素,实践表明系统可为学生提供设计型课程教学实验。     

RF characterization and modelling of high density Through Silicon Vias for 3D chip stacking

3D integration including Through Silicon Vias is more and more considered as the solution to overcome conventional 2D IC issues. In this way, TSV analytical equivalent models are hardly required to achieve 3D products and to make design recommendations. In this paper, a 3D process flow is detailed and used to integrate specific RF structures including copper-filled TSVs with 3 μm wide and 15 μm deep dimensions. Both measurements and simulations of these structures lead to the extraction of frequency-dependent parameters and the building of a SPICE compatible π-shaped analytical parametrical model of the TSV.     

漂珠/钡铁氧体/聚苯胺复合材料的制备及吸波性能研究

以溶胶–凝胶自蔓延燃烧法与原位掺杂聚合法相结合的方式制备了漂珠/钡铁氧体/聚苯胺复合材料。利用扫描电镜(SEM)、X射线衍射仪(XRD)和傅立叶红外光谱仪(FTIR)等表征了材料的微观形貌、晶体结构及组成。采用矢量网络分析仪在2~18 GHz频段内测定了复合材料的电磁参数。结果表明:所制材料的介质损耗和磁损耗最大值分别为0.30和0.52;当样品吸波层厚度为3.0 mm时,在电磁波频率为7.1 GHz时样品的反射损耗峰值为–33.74dB,在–20 dB的吸收带宽为3.2 GHz。     

Preparation and characterization of ZnS thin films prepared by chemical bath deposition

Zinc sulfide thin films were prepared by chemical bath deposition technique using zinc sulfate (ZnSO₄·7H₂O) and thiourea [SC(NH₂)₂] as sources of Zn²⁺ and S^2– ions, and ammonia (NH₃) and hydrazine hydrate (N₂H₄) as complexing agents. The structural, stoichiometric proportion, morphology and optical properties of the ZnS thin films were investigated as a function of thiourea and ammonia concentrations using X-ray diffraction (XRD), energy-dispersive spectroscopy (EDS), scanning electron microscopy (SEM) and UV-visible spectrophotometry measurements. The deposition mechanism is discussed. The results reveal that the ZnS films exhibit poor crystallinity. The ammonia concentration had an obvious effect on the surface morphology, optical properties and deposition mechanism. The S/Zn atomic ratio and optical bandgap of the ZnS thin films first increased and then decreased with increasing ammonia or thiourea concentration.     

Effect of post-growth annealing on the structural,optical and electrical properties of V2O5 nanorods and its fabrication,characterization of V2O5/p-Si junction diode

We report the synthesis of V₂O₅ nanorods by utilizing simple wet chemical strategy with ammonia meta vanadate (NH₄VO₃) and polyethylene glycol (PEG) exploited as precursor and surfactant agent, respectively. The effect of post-annealing on structural, optical and electrical properties of V₂O₅ nanorods was characterized by XRD, HRSEM-EDX, TEM, FT-IR, UV (DRS), PL, TG–DTA and DC conductivity studies. The X-ray diffraction analysis revealed that the prepared sample annealed at 150 °C for 5 h which exhibited anorthic phase of V₅O₉ and annealed at 300–600 °C showed the anorthic phase change to orthorhombic phase of V₂O₅ due to the post-annealing effect. The surface morphology results indicated that increasing temperature caused a change from microrods to a nanorods shape in the morphology of V₂O₅. FT-IR spectrum confirmed that the presence of V₂O₅ functional groups and the formation of V–O bond. The optical band gap was found in the range 2.5–2.48 eV and observed to decreases with various annealed temperature. The DC electrical conductivity was studied as a function of temperature which indicated the semiconducting nature. Further, the potential of V₂O₅ nanostructures were grown on the p-Si substrate using the nebulizer spray technique. The junction properties of the V₂O₅/p-Si diode were evaluated by measuring current (I)–voltage (V) and AC characteristics.     

钡铁氧体吸波涂层的制备及其影响因素研究

用固相法制备了W-型钡铁氧体BaZn0.6Co1.4Fe16O27粉末并用其制备了吸波涂层。通过正交实验讨论了涂层厚度、搅拌时间和铁氧体含量对涂层吸波性能的影响,并用Statistica8.0软件对涂层的最佳制备条件进行了预测。根据正交试验结果,厚度为1.81mm、铁氧体质量分数为75%、搅拌时间为0.5h的吸波涂层具有最优的吸波性能,其微波吸收值在8.2～18.0GHz频段内均高于10dB,吸收峰值在15.3GHz左右更是达到了33dB。由软件预测得到的最佳制备条件与正交实验结果相符。     

On the profile of frequency dependent series resistance and dielectric constant in MIS structure

In this study, the frequency dependent of the forward and reverse bias capacitance-voltage (C-V) and conductance-voltage (G/ω - V) measurements of Al/SiO₂/p-Si (MIS) structures are carried out in frequency range of 10 kHz-10 MHz. The frequency dependence of series resistance (R_s), density of surface states (N_ss), dielectric constant (ε′), dielectric loss (ε″), dielectric loss tangent (tan δ) and the ac electrical conductivity (σ_dc) are studied for these structure at room temperature. Experimental results show that both electrical and dielectric parameters were strongly frequency and voltage dependent. The ε′ and ε″ are found to decrease with increasing frequency while σ_ac is increased. Also, both the effects of surface states N_ss and R_s on C-V and G/ω - V characteristics are investigated. It has been seen that the measured C and G decrease with increasing frequency due to a continuous distribution of N_ss in frequency range of 10 kHz-1 MHz. The effect of R_s on the C and G are found noticeable at high frequencies. Therefore, the high frequencies C and G values measured under both reverse and forward bias were corrected for the effect of series resistance R_s to obtain real MIS capacitance C_c and conductance G_c using the Nicollian and Goetzberger technique. The distribution profile of R_s-V gives a peak in the depletion region at low frequencies and disappears with increasing frequencies.     

Fabrication and advanced electrical and stability characterization of laser-shaped thick-film and LTCC microresistors for high temperature applications

Thick-film and LTCC (Low Temperature Co-fired Ceramics) technologies are well-established and relatively low-cost fabrication method of passives. This paper presents systematic studies of fabrication and a wide spectrum of geometrical and electrical properties of thick-film and LTCC microresistors with dimensions down to 30 × 200 μm². The geometrical parameters (average length, width and thickness, relations between designed and real dimensions, distribution of planar dimensions) are correlated with basic electrical properties of resistors (sheet resistance, temperature dependence of resistance), long-term stability as well as durability of microresistors to short electrical pulses in the temperature range from 25 °C to 400 °C.     

Temperature and frequency dependent electrical and dielectric properties of Al/SiO2/p-Si (MOS) structure

The electrical and dielectric properties of Al/SiO₂/p-Si (MOS) structures were studied in the frequency range 10 kHz-10 MHz and in the temperature range 295-400 K. The interfacial oxide layer thickness of 320 Å between metal and semiconductor was calculated from the measurement of the oxide capacitance in the strong accumulation region. The frequency and temperature dependence of dielectric constant (ε′), dielectric loss (ε″), dielectric loss tangent (tan δ) and the ac electrical conductivity (σ_ac) are studied for Al/SiO₂/p-Si (MOS) structure. The electrical and dielectric properties of MOS structure were calculated from C-V and G-V measurements. Experimental results show that the ε′ and ε″ are found to decrease with increasing frequency while σ_ac is increased, and ε′, ε″, tan δ and σ_ac increase with increasing temperature. The values of ε′, ε″ and tan δ at 100 kHz were found to be 2.76, 0.17 and 0.06, respectively. The interfacial polarization can be more easily occurred at low frequencies, and the number of interface state density between Si/SiO₂ interface, consequently, contributes to the improvement of dielectric properties of Al/SiO₂/p-Si (MOS) structure. Also, the effects of interface state density (N_ss) and series resistance (R_s) of the sample on C-V characteristics are investigated. It was found that both capacitance C and conductance G were quite sensitive to temperature and frequency at relatively high temperatures and low frequencies, and the N_ss and R_s decreased with increasing temperature. This is behavior attributed to the thermal restructuring and reordering of the interface. The C-V and G/ω-V characteristics confirmed that the N_ss, R_s and thickness of insulator layer (δ) are important parameters that strongly influence both the electrical and dielectric parameters and conductivity in MOS structures.     

Electrical characterization and morphological properties of AlN films prepared by dc reactive magnetron sputtering

Aluminum nitride (AlN) films were deposited by dc reactive magnetron sputtering on p-Si-(1 0 0) substrate in Ar-N₂ gas mixtures. The effects of nitrogen concentration and sputtering power on AlN films deposition rate, crystallographic orientation, refractive index, and surface morphology are investigated by means of several characterization techniques. The results show that AlN films reasonably textured in (0 0 2) orientation with low surface roughness can be obtained with the deposition rate as high as 70 nm/min by the control of either target power or N₂ concentration in the gas mixture. Increasing the dc discharge power, Al atoms are not completely nitridized and the Al phases appear, as well as the AlN phases. MIS (Metal-Insulator-Semiconductor) structures were fabricated and electrically evaluated by I-V (current-voltage) and C-V (capacitance-voltage) measurements at high frequency (1 MHz). The results obtained from C-V curves indicate that charges at the dielectric/semiconductor interface occur, and the dielectric constant values (extracted under strong accumulation region) are compatible with those found in literature.     

Structural and electrical properties of radio frequency magnetron sputtered tantalum oxide films: Influence of post-deposition annealing

The as-deposited and annealed radio frequency reactive magnetron sputtered tantalum oxide (Ta₂O₅) films were characterized by studying the chemical binding configuration, structural and electrical properties. X-ray photoelectron spectroscopy and X-ray diffraction analysis of the films elucidate that the film annealed at 673 K was stoichiometric with orthorhombic β-phase Ta₂O₅. The dielectric constant values of the tantalum oxide capacitors with the sandwich structure of Al/Ta₂O₅/Si were in the range from 14 to 26 depending on the post-deposition annealing temperature. The leakage current density was <20 nA cm^?2 at the gate bias voltage of 0.04 MV/cm for the annealed films. The electrical conduction mechanism observed in the films was Poole–Frenkel.     

Synthesis,characterization and in vitro photodynamic study of FA-TiO2 nanocomposite

In this paper, Folic acid (FA) modified TiO₂ nanocomposite (FA-TiO₂) was prepared by a facile adsorption-incubation method. The as-synthesized FA-TiO₂ was spherical with an average diameter of 20 nm. It was found that FA-TiO₂ exhibited excellent biocompatibility in FR(–) HepG-2 cells. In contrast, photodynamic FA-TiO₂ was more effective on killing FR(+) SGC-7901 cells, suggesting significant anticancer effects on FR(+) cells. The optimal photodynamic effect was obtained when modified proportion was 0.6 (FA:TiO₂), the amount of FA-TiO₂ was 150 μg/mL, and the illumination time was 30 min. Targeting studies indicated that FA-TiO₂ could be selectively transported into FR (+) SGC-7901 cells. Data from flow cytometry revealed that the cell cycle arrest and the mitochondrial membrane potential (MMP) collapse were the possible mechanisms involved in the photodynamic properties of FA-TiO₂. Overall, the results obtained may provide a new sight for anticancer treatment.     

Electrical analysis of Al/ZnO/p-Si,Al/PMMA/p-Si and Al/PMMA/ZnO/p-Si structures: Comparison study

Al/ZnO/p-Si, Al/PMMA/p-Si and Al/PMMA/ZnO/p-Si structures were fabricated. Based on the measured current–voltage (C–V) and capacitance–voltage curves, the electrical characteristics of these heterostructures such as ideality factor, barrier height and series resistance of each structure were analyzed and then compared with those of Al/PMMA/ZnO/p-Si. According to C–V measurement, it was found that the Al/PMMA/ZnO/p-Si structure indicates the better electronic performance rather than other structures. The obtained results represent low series resistance (19.3 Ω) after coating with polymethyl methacrylate (PMMA) over ZnO/p-Si heterojunction structure for Al/PMMA/ZnO/p-Si heterostructure.