Design criterion for high‐speed low‐power SC circuits

The settling behavior of switched‐capacitor (SC) circuits is investigated in this paper. The analysis is performed for typical SC circuits employing two‐stage Miller‐compensated operational amplifiers (op‐amps). It aims to evaluate the real effectiveness of the conventional design approach for the optimization of op‐amp settling performances. It is demonstrated that the classical strategy is quite inaccurate in typical situations in which the load capacitance to be driven by the SC circuit is small. The presented study allows a new settling optimization strategy based on an advanced circuit model to be defined. As shown by design examples in a commercial 0.35‐ µm CMOS technology, the proposed approach guarantees a significant settling time reduction with respect to the existing settling optimization strategy, especially in the presence of small capacitive loads to be driven by the SC circuit. Copyright © 2010 John Wiley & Sons, Ltd.     

Design approach for high‐bandwidth low‐power three‐stage operational amplifiers

A new design approach to optimize the frequency compensation network of three‐stage operational amplifiers (op‐amps) is presented. The proposed criterion is aimed at maximizing the bandwidth of well‐established three‐stage op‐amps using Nested‐Miller Compensation with feedforward tranconductance stage and nulling resistor (NMCFNR). As shown by design examples in a commercial 0.35‐µm CMOS technology, the proposed approach allows the amplifier bandwidth to be enhanced significantly with respect to that resulting from using existing design strategies for NMCFNR op‐amps. It is also demonstrated that NMCFNR op‐amps, designed according to the proposed method, even guarantee larger values of the gain‐bandwidth product than three‐stage amplifiers using more complicated frequency compensation techniques, such as AC boosting compensation or damping‐factor control frequency compensation. Copyright © 2010 John Wiley & Sons, Ltd.     

Three‐stage nested‐Miller‐compensated operational amplifiers: Analysis,design, and optimization based on settling time

In analog signal‐processing applications, settling performance of the employed operational amplifiers (opamps) is usually of great matter. Under low‐voltage environment of modern technologies where only a few transistors are allowed to be stacked, three‐stage amplifiers are gaining more interest. Unfortunately, design and optimization of three‐stage opamps based on settling time still suffer from lack of a comprehensive analysis of the settling behavior and closed‐form relations between settling time/error and other parameters. In this paper, a thorough analysis of the settling response of three‐stage nested‐Miller‐compensated opamps, including linear and non‐linear sections, is presented. This analysis leads to a design methodology which determines the circuit requirements for desired settling time/error. Based on settling time, it allows optimizations in power consumption and area. Copyright © 2010 John Wiley & Sons, Ltd.     

Analysis and realization of a switched fractional‐order‐capacitor integrator

Using fractional calculus, we analyze a classical switched‐capacitor integrator when a fractional‐order capacitor is employed in the feed‐forward path. We show that using of a fractional‐order capacitor, significantly large time constants can be realized with capacitances in the feedback path much smaller in value when compared with a conventional switched‐capacitor integrator. Simulations and experimental results using a commercial super‐capacitor with fractional‐order characteristics confirmed via impedance spectroscopy are provided. Copyright © 2016 John Wiley & Sons, Ltd.     

A design methodology for power‐efficient reconfigurable SC ΔΣ modulators

This paper presents a methodology to design reconfigurable switched‐capacitor delta‐sigma modulators (ΔΣMs) capable of keeping their corresponding power efficiency figures constant and optimal for a set of resolutions and signal bandwidths. This method is especially suitable for low‐bandwidth, medium‐to‐high‐resolution specifications, which are common in biomedical application range. The presented methodology is based on an analytic model of all different contributions to the power dissipation of the ΔΣM. In particular, a novel way to predict the static power dissipated by integrators based on class A and class AB operational transconductance amplifier is presented. The power‐optimal solution is found in terms of filter order, quantizer resolution, oversampling ratio, and capacitor dimensions for a targeted resolution and bandwidth. As the size of the sampling capacitors is crucial to determine power consumption, three approaches to achieve reconfigurability are compared: sizing the sampling capacitors to achieve the highest resolution and keep them constant, change only the first sampling capacitor according to the targeted resolution, or program all sampling capacitors to the required resolution. The second approach results in the best trade‐off between power efficiency and simplicity. A reconfigurable ΔΣM for biomedical applications is designed at transistor level in a 0.18‐µm complementary metal–oxide–semiconductor process following the methodology discussed. A comparison between the power estimated by the proposed analytic model and the transistor implementation shows a maximum difference of 17%, validating thus the proposed approach. Copyright © 2014 John Wiley & Sons, Ltd.     

A novel analog switch for high‐precision switched‐capacitor applications

The performance of a switched‐capacitor circuit strongly depends on its analog switches. This paper introduces a new technique to design a high‐precision analog metal‐oxide‐semiconductor switch for switched‐capacitor applications. The accuracy of analog switches is a critical parameter to determine overall performance of the discrete‐time analog systems. To satisfy the accuracy requirements of the switch, a novel technique to minimize the charge injection and clock feedthrough errors by using a very simple structure is proposed. Moreover, an innovative approach to increase the OFF resistance of the switch and consequently minimizing its leakage current is presented. To evaluate the performance of the proposed switch, simulations are done in TSMC 0.18μm standard complementary metal‐oxide‐semiconductor technology with BSIM3V3 device models. The ON and OFF resistances of the switch are one of the most important factors that should be considered while investigating analog switches. The ON resistance of the proposed switch is less than 560Ω over entire input signal range which completely satisfies the tracking bandwidth requirements. In addition, since the proposed switch provides an ultrahigh OFF resistance in the range of several GΩs, the leakage current of the proposed switch is negligible. Simulation results also show that switch‐induced errors are significantly eliminated by using the proposed cancellation technique. The output error charge due to charge injection and clock feedthrough over a wide range of input signal variation is very low (less than 1.6 fC). Moreover, simulation results show that the proposed switch achieves signal to noise plus distortion ratio of 80.55 dB, effective number of bits of 13.08, total harmonic distortion of ?81.41 dB, and spurious‐free dynamic range of 87.7 dB for a 2.5‐MHz sinusoidal input of 800‐mV peak‐to‐peak amplitude at 200‐MHz sampling rate with a 1.8‐V supply voltage. Consequently, the simulation results verify that the proposed switch can significantly improve the dynamic and static performances of a switched‐capacitor circuit.     

0.5‐V bulk‐driven OTA and its applications

A new 0.5‐V bulk‐driven operational transconductance amplifier (OTA), designed in 50 nm CMOS technology, is presented in the paper. The circuit is characterized by improved linearity and dynamic range obtained for MOS devices operating in moderate inversion region. Some basic applications of the OTA such as a voltage integrator and a second‐order low‐pass filter have also been described. The filter is compared to other low‐voltage filters presented in the literature. Copyright © 2013 John Wiley & Sons, Ltd.     

New SRAM design using body bias technique for low‐power and high‐speed applications

In this paper, a new SRAM cell with body‐bias actively controlled by a control circuit and word line is introduced to realize low‐power and high‐speed applications. The cell uses two word lines, which vary between positive and negative voltage levels to control the body bias of cell's transistors. In this design, using a peripheral control circuit with the least possible number of transistors, the access time is decreased and also a trade‐off between static and dynamic power consumption is provided. Compared to a conventional SRAM cell, the proposed cell reduces the static power consumption by 82% and improves the read performance by 40% and the write performance by 27%. Copyright © 2013 John Wiley & Sons, Ltd.     

A configuration for realizing floating,linear, voltage‐controlled resistance,inductance and FDNC elements

A configuration using current feedback amplifiers has been presented, which is capable of realizing linear, positive/negative voltage‐controlled resistance, voltage‐controlled inductance and voltage‐controlled frequency‐dependent negative conductance in floating form (and thereby, also in grounded form) from the same structure. The workability of the proposed configuration has been demonstrated by hardware implementation results using AD 844‐type current feedback op‐amps (CFOAs) and BFW‐11‐type JFETs and the workability in high‐frequency range has been demonstrated by SPICE simulation using CMOS CFOAs. Copyright © 2008 John Wiley & Sons, Ltd.     

Low‐voltage low‐power CMOS receiver front‐end for gigabit short‐reach optical communications

This article presents a new CMOS receiver analog front‐end for short‐reach high‐speed optical communications, which compensates the limited product bandwidth length of 1‐mm step‐index plastic optical fiber (SI‐POF) channels (45 MHz · 100 m) and the required large‐diameter high‐capacitance Si PIN photodetector (0.8 mm–3 pF). The proposed architecture, formed by a transimpedance amplifier and a continuous‐time equalizer, has been designed in a standard 0.18‐µm CMOS process with a single supply voltage of only 1 V, targeting gigabit transmission for simple no‐return‐to‐zero modulation consuming less than 23 mW. Experimental results validate the approach for cost‐effective gigabit SI‐POF transmission. Comparative analysis with previously reported POF receivers has been carried out by introducing a useful figure of merit. Copyright © 2012 John Wiley & Sons, Ltd.     

Bessel‐like compensation of three‐stage operational transconductance amplifiers

In this paper, we introduce a simple and well‐defined approach for the design of fast settling amplifiers suitable for switched‐capacitor circuits and characterized by low capacitive loads, in the order of few pico‐farad. In the specific, the design is based on a new Bessel‐like compensation that sets the phase of the closed‐loop amplifier to be linearly related to the frequency, thus emulating the behavior of an ideal delay, like in a Bessel filter. The proposed Bessel‐like approach is validated through the design and the simulation of two 3‐stage amplifiers in a 65‐nm CMOS process.     

Analytical synthesis and comparison of voltage‐mode Nth‐order OTA‐C universal filter structures

Complementary single‐ended‐input operational transconductance amplifier (OTA)‐based filter structures are introduced in this paper. Through two analytical synthesis methods and two transformations, one of which is to convert a differential‐input OTA to two complementary single‐ended‐input OTAs, and the other to convert a single‐ended‐input OTA and grounded capacitor‐based one to a fully differential OTA‐based one, four distinct kinds of voltage‐mode nth‐order OTA‐C universal filter structures are proposed. TSMC H‐Spice simulations with 0.35µm process validate that the new complementary single‐ended‐input OTA‐based one holds the superiority in output precision, dynamic and linear ranges than other kinds of filter structures. Moreover, the new voltage‐mode band‐pass, band‐reject and all‐pass (except the fully differential one) biquad structures, all enjoy very low sensitivities. Both direct sixth‐order universal filter structures and their equivalent three biquad stage ones are also simulated and validated that the former is not absolutely larger in sensitivity than the latter. Finally, a very sharp increment of the transconductance of an OTA is discovered as the operating frequency is very high and leads to a modified frequency‐dependent transconductance. Copyright © 2010 John Wiley & Sons, Ltd.     

A 13 bit 10 MHz bandwidth MASH 3–2 Σ∆ modulator in 90 nm CMOS

In this paper, a new multi loop sigma‐delta (ΣΔ) modulator is proposed which employs one order redundant noise shaping in the first stage so the effect of the quantization noise leakage is minimized. Thus, analog circuit requirements are considerably relaxed compared to the conventional Multi‐stAge‐noise‐SHaping (MASH) structures. This enhancement makes the structure appropriate for low voltage and broadband applications. The proposed architecture is compared with traditional high‐order structures, and the advantages are demonstrated by both the analysis and behavioral system level simulations. As a prototype, the proposed MASH 3–2 sigma‐delta modulator is designed, and the detailed design procedure is presented from the system level to the circuit level in a 90 nm CMOS technology. Circuit level simulation results show that the modulator achieves a peak signal‐to‐noise and distortion ratio of 79.4 dB and 79 dB dynamic range over a 10 MHz bandwidth with a sampling frequency of 160 MHz. It consumes 35.4 mW power from a single 1 V supply. Copyright © 2012 John Wiley & Sons, Ltd.     

A low‐power technique for high‐resolution dynamic comparators

A low‐power technique for high‐resolution comparators is introduced. In this technique, p‐type metal‐oxide‐semiconductor field‐effect transistors are employed as the input of the latch of the comparator just like the input of the preamplifier. The latch and preamplifier stages are activated in a special pattern using an inverter‐based controller. Unlike the conventional comparator, the preamplification delay can be set to an optimum low value even if after the preamplification, the output voltages is less than n‐channel metal‐oxide semiconductor voltage threshold. As a result, the proposed comparator reduces the power consumption significantly and enhances the speed. The speed and power benefits of the proposed comparator were verified using analytical derivations, PVT corners, and post layout simulations. The results confirm that the introduced technique reduces the power consumption by 60%, also, provides 57% better comparison speed for an input common mode voltage (V_cm) range of 0‐Vdd/2.     

A waveform generator circuit for extra low‐frequency CMOS micro‐power applications

This paper presents a novel low‐power CMOS extra low‐frequency (ELF) waveform generator based on an operational trans‐conductance amplifier (OTA). The generator has been designed and fabricated using 2.5‐V devices available in 130‐nm IBM CMOS technology with a ±1.2‐V voltage supply. Using the same topology, two sets of device dimensions and circuit components are designed and fabricated for comparing relative performance, silicon area and power dissipation. The first design consumes 691 μW, while the second design consumes 943 μW using the same voltage supply. This low‐power performance enables the circuit to be used in many micro‐power applications. ELF oscillation is achieved for the two designs being around 3.95 Hz and 3.90 Hz, respectively, with negligible waveform distortion. The measured frequencies agree well with the simulation results. The first design is found to provide overall optimal performance compared to the second design at the expense of higher silicon area. Copyright © 2015 John Wiley & Sons, Ltd.     

An approach to model high‐frequency distortion in negative‐feedback amplifiers

In this paper, we present an analytical approach to study the harmonic distortion in the frequency domain of operational amplifiers (opamps) embedded in a nonlinear feedback network. The analysis is based on a frequency‐domain block scheme that models the opamp with one block and the feedback network with two blocks, but it is demonstrated that only one feedback block needs to be characterized for the two basic inverting and non‐inverting configurations. The obtained closed‐form expressions extend our understanding of nonlinear frequency behaviour in feedback opamp circuits. Indeed, they give the contribution of each network component to the output distortion. As an instructive example, we analysed second‐ and third‐order harmonic distortion of an active‐RC inverting lossy integrator having all the components nonlinear. The accuracy of the proposed method is confirmed by comparison with computer simulations at transistor level. Copyright © 2006 John Wiley & Sons, Ltd.     

A 5‐GHz energy‐efficient tunable pulse generator for ultra‐wideband applications using a variable attenuator for pulse shaping

A new energy‐efficient tunable pulse generator is presented in this paper using 0.13‐µm CMOS technology for short‐range high‐data‐rate 3.1–10.6 GHz ultra‐wideband applications. A ring oscillator consisting of current‐starved CMOS inverters is quickly switched on and off for the duration of the pulse, and the amplitude envelope is shaped with a variable passive CMOS attenuator. The variable passive attenuator is controlled using an impulse that is created by a low‐power glitch generator (CMOS NOR gate). The glitch generator combines the falling edge of the clock and its delayed inverse, allowing the duration of the impulse to be changed over a wide range (500–900 ps) by varying the delay between the edges. The pulses generated with this technique can provide a sharp frequency roll off with high out‐of‐band rejection to help meet the Federal Communications Commission mask. The entire circuit operates in switched mode with a low average power consumption of less than 3.8 mW at 910 MHz pulse repetition frequency or below 4.2 pJ of energy per pulse. It occupies a total area of 725 × 600 µm² including bonding pads and decoupling capacitors, and the active circuit area is only 360 × 200 µm². Copyright © 2011 John Wiley & Sons, Ltd.     

Design of high‐speed low‐power parallel‐prefix adder trees in nanometer technologies

This paper presents a novel approach to design high‐speed low‐power parallel‐prefix adder trees. Sub‐circuits typically used in the design of parallel‐prefix trees are deeply analyzed and separately optimized. The modules used for computing the group propagate and generate signals have been designed to improve their energy‐delay behavior in an original way. When the ST 45 nm 1 V CMOS technology is used, in comparison with conventional implementations, the proposed approach exhibits computational delay with mean value and standard deviation up to 40% and 48% lower and achieves energy consumption with mean value and standard deviation up to 57% and 40% lower. A 32‐bit Brent‐Kung tree made as proposed here reaches a computational delay lower than 165 ps and dissipates 147.4fJ on average. Copyright © 2013 John Wiley & Sons, Ltd.     

Robust design of CMOS amplifiers oriented to settling‐time specification

In this paper, we propose a new approach for the robust design of complementary metal‐oxide‐semiconductor amplifiers based on settling‐time specifications. The approach is based on the definition of the separation factors and on the analysis of their role in the settling time. We define a design strategy for being certain that an OTA satisfies the settling‐time constraint under any statistical variation of process or design parameters. The proposed strategy is applied to the transistor level design of a two‐stage amplifier and a three‐stage one. Simulation results, in good agreement with theory, confirm the validity of the proposed approach. Copyright © 2016 John Wiley & Sons, Ltd.     

0.5‐V bulk‐driven differential amplifier

A new 0.5‐V fully differential amplifier is proposed in this article. The structure incorporates a differential bulk‐driven voltage follower with conventional gate‐driven amplification stages. The bulk‐driven voltage follower presents differential gain equal to unity while suppressing the input common‐mode voltage. The amplifier operates at a supply voltage of less than 0.5 V, performing input transconductance almost equal to a gate transconductance and relatively high voltage gain without the need for gain boosting. The circuit was designed and simulated using a standard 0.18‐µm CMOS n‐well process. The low‐frequency gain of the amplifier was 56 dB, the unity gain bandwidth was approximately 3.2 MHz, the spot noise was 100 nV/√Hz at 100 kHz and the current consumption was 90 μΑ. Copyright © 2012 John Wiley & Sons, Ltd.