低温共烧陶瓷技术(LTCC)与低介电常数微波介质陶瓷

简述了低温共烧陶瓷技术(LTCC)的特点及微波介质陶瓷实现低温共烧的性能要求,重点介绍了LTCC低介电常数微波介质陶瓷的分类及微波介电性能,分析和讨论了LTCC低介电常数微波介质陶瓷存在的问题,针对LTCC低介电常数陶瓷材料今后的发展方向提出了自己的看法。     

低温共烧陶瓷(LTCC)材料的应用及研究现状

主要概述了低温共烧陶瓷(Low Temperature Co-fired Ceramics,简称LTCC)材料的应用和研究现状,认为利用低温共烧陶瓷技术将多种元器件复合或将其集成在多层陶瓷基板中是今后信息功能陶瓷发展的一个重要方向,在我国应大力发展具有自主知识产权的LTCC技术.     

微波介质陶瓷低温共烧技术的研究进展

介绍了低温共烧陶瓷技术(LTCC)的特点及低温共烧技术对微波介质陶瓷的性能要求.总结了微波介质陶瓷实现低温共烧的主要方法,详细综述了典型微波介质陶瓷低温共烧技术的研究进展,指出了其目前存在的问题,并针对微波介质陶瓷低温共烧技术的发展方向提出了看法.     

低温共烧陶瓷{\bf (LTCC)}技术在材料学上的进展

低温共烧陶瓷（LTCC）技术是近年发展起来的令人瞩目的整合组件技术，已经成为无源集成的主流技术，成为无源元件领域的发展方向和新的元件产业的经济增长点．本文叙述了低温共烧陶瓷技术（LTCC）的特点、制备工艺、材料制备相关技术和国内外研究现状以及未来发展趋势．     

LTCC异质材料匹配共烧研究

采用低温共烧陶瓷(LTCC)介电/铁氧体复合异质材料是制备小型化多层片式EMI滤波器的关键,但实现异质材料的匹配共烧一直是研究的难点.通过调整流延配方和优化流延工艺,介质材料掺杂改性及采用三明治结构等方法对异质材料的共烧匹配性进行合理有效地调制,解决了异质材料低温共烧匹配技术难点,实现了LTCC异质材料良好的共烧兼容特...     

超低温烧结LTCC材料的制备及性能研究

在Bi-B-Si易熔玻璃的基础上,利用易熔玻璃+陶瓷方式经直接煅烧制备烧结温度低于700℃的超低烧结温度的低温共烧陶瓷(LTCC)粉体;通过控制玻璃相与陶瓷相比例,制备了介电常数为9.0左右,低介电损耗为0.003左右(@500MHz),可630℃烧结的LTCC材料。     

LTCC微波介质陶瓷的研究进展

在介绍低温共烧陶瓷(LTCC)技术的基础上,阐述了LTCC技术对微波介质陶瓷的性能要求.综述了ZnO-TiO2、ZnNb2O6、Te基等常用的LTCC材料体系及超低温(≤700℃)烧结微波介质陶瓷体系.目前存在的问题是传统的降温方法很难实现材料高性能与低烧结温度的完美结合,因此在今后的发展中应致力于解决这一问题并研究开发LTCC系列化材料.另外,寻找新型固有烧结温度低的材料体系是未来发展的方向之一.     

固有烧结温度低的低介电常数陶瓷材料研究进展

固有烧结温度低的低介电常数微波介质陶瓷材料在低温共烧陶瓷(LTCC)中具有重要的应用前景。着重介绍了钨酸盐、磷酸盐、碲酸盐、钼酸盐、钒酸盐、铌酸盐和硼酸盐等固有烧结温度低的低介电常数微波介质陶瓷材料的研究进展,并指出低温共烧陶瓷材料目前存在的问题。     

溶胶-凝胶法制备MgO-Al2O3-SiO2系LTCC基板材料及其结构性能研究

采用溶胶-凝胶法制备MgO-Al2O3-SiO2系低温共烧陶瓷(LTCC)基板粉料的先驱体,经700℃焙烧制得LTCC基板粉体,在850、900℃下烧结成LTCC基板样品.研究样品的相结构、微观结构、介电性能等.结果表明,样品含有多种晶相,微观结构为孤岛结构和柱状晶结构,介电常数、介电损耗、绝缘电阻、密度基本符合LTCC基板要求.     

低温共烧陶瓷无源集成技术及其应用

低温共烧陶瓷技术是近年发展起来的令人瞩目的整合组件技术,已经成为无源集成的主流技术,成为无源元件领域的发展方向和新元件产业的经济增长点.介绍了目前LTCC无源集成技术及其国内外研究动态和应用前景.     

LTCC介质材料的研究进展

研究能与银或铜低温共烧且适合于高频使用的微波介质材料是今后微波材料发展的主要方向之一.LTCC材料以其独特的优势,近年来得到国内外专家的广泛关注.介绍了LTCC材料的发展历程以及制造工艺,同时讨论了LTCC材料的应用现状、存在问题以及发展前景.     

低温共烧基板材料研究进展

LTCC是现代微电子封装中的重要组成部分,因性能优良而广泛应用于高速、高频系统.LTCC基板材料的性能决定封装的质量,材料的研究在LTCC的进展中发挥了重要作用.LTCC基板材料可分为两大类:玻璃/陶瓷和微晶玻璃.概述了各类基板材料的组成、性能和应用方面的情况,并介绍了各类材料研究的进展,指出了基板材料未来的发展方向.     

我国综采放顶煤开采技术及其展望

介绍了20世纪80年代中期以来对我国煤炭工业有重大影响的综采放顶煤开采技术的概况;论述了我国科技人员在该项技术进步中在顶煤可放性评价、岩（煤）运动规律及支架围岩关系、提高回收率的技术和工艺、安全控制、大功率成套设备研制等方面的创造性贡献;对综采放顶煤技术的发展趋势作出了评价。     

应用于蓝牙技术发展的LTCC——AlN多层布线工艺

现代IT产业的发展催生了蓝牙技术的发展。而蓝牙技术的发展迫切需要发展高性能三维功能衬底技术。AlN陶瓷具有优良的综合性能。研究了AlN流延坯和Ag导体浆料的低温共烧技术 ,比较了在AlN成瓷基板上的各种金属化工艺。     

Effect of ink organics on cambering of an Ag-metallized low temperature co-fired ceramics (LTCC)

Ceramic technology has had an important role in microelectronics since 1960s and ceramic seems to be a continuously developing, mature technology. Recently, development of low temperature co-fired ceramic technology (LTCC) has been geared up due to the huge demand of miniaturisation of electronic components. New materials are being developed for extending the demand of wide range of dielectric properties of LTCC, minimization of shrinkage, cambering of LTCC, high quality of conductors and patterning etc. This paper deals with formulation of silver conductor inks for LTCC and the effect of ink organics on the LTCC in particular to cambering/warpage, microstructure development were studied and presented.

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Effects of Sintering Process Conditions on Size Shrinkages of Low-Temperature Co-Fired Ceramic Substrate

The effects of sintering process conditions on the size shrinkages of low-temperature co-fired ceramic (LTCC) substrate were investigated. The process variables investigated were thickness of the stacked raw tapes, lamination pressure, lamination-pressure holding time, pre-heating time, debinding time, sintering dwell time, and sintering temperature ramp. Results revealed that the size shrinkage percentage of the LTCC samples in the lateral directions was always smaller than that in the thickness direction. The lateral shrinkage deviations were less than 2.1% for all the experiments conducted in this study. Pre-heating time, lamination-pressure holding time, debinding time, sintering dwell time and sintering temperature ramp had almost no effects on the lateral size shrinkage of the LTCC samples, and the average of the lateral shrinkage values was 15.3%, with a standard deviation of 0.17%. Lamination pressure and stacked raw-tape thickness had effects on the lateral size shrinkage of the LTCC samples, and empirical equations for calculation of the size shrinkage values were obtained by curve fitting.     

Diffusivity of silver ions in the low temperature co-fired ceramic (LTCC) substrates

Diffusion of silver inner-electrode occurred during sintering of commercial low temperature co-fired glass ceramic substrate made the dielectric surface become light yellow. The samples added with silicon oxide (SiO₂) powder, however, maintained white color. Silicon-oxide powder was used to modified the sintering behavior and inhibit the silver ions diffusion for the LTCC ceramics. The alumina particles in the LTCC substrates could be regarded as the diffusion barrier of silver ions. The activation energy for silver ions diffusion in the LTCC substrates was 101 kJ/mol. When 5 wt% SiO₂ powder was added into the LTCC substrate, the diffusion activation energy of silver ions became 145 kJ/mol. At sintering temperature of 1180 K, the diffusion coefficient of silver ion in the LTCC ceramic substrates with and without additional SiO₂ were 8.88 × 10⁻¹³ cm²/s and 1.08 × 10⁻¹² cm²/s, respectively.     

Microsensor based on low temperature cofired ceramics and gas-sensitive thin film

A novel design of gas sensor using low temperature cofired ceramics (LTCC) and thin film technologies is presented. The LTCC structure is composed essentially of two ceramic layers with interlayer thick film Pt heater, interdigitated electrodes on top, contact pads and metallic connections realised by vias. The thin films of both SnO₂ and In₂O₃, intentionally doped and activated, were deposited on top of the structure. With some modifications of the lamination process and heat treatment parameters, the authors obtained the upper ceramic layer with the roughness not exceeding 250 nm, what was suitable for thin film technology. The films deposited onto such LTCC structure revealed the sensing properties very similar to the reference films deposited onto glass. The gas-sensitive films were tested with changing concentrations of reducing and oxidising gases in air. The necessary sensor working temperature was obtained and stabilised using a custom-built digital controller. The low heat capacity of the sensor structure enabled also a sinusoidal temperature control. The satisfactory results obtained by the authors indicate that the connection of LTCC and thin film technologies can lead to the fabrication of good quality gas sensors.