金刚石薄膜的结构特征与电导率的相关性

讨论了ＣＶＤ金刚石薄膜作为半导体材料的一些基本特性，主要叙述了金刚石薄膜的生长习性和结构特征对其电性能的影响，即其电导率的“尺度交 ”和“晶面效应”，以及这些效应对由金刚薄膜制备的半导体器件性能的影响。     

金刚石薄膜半导体研究进展及其应用前景

ＣＶＤ金刚石薄膜是一种有发展前途的半导体材料，近几年来国内外研究了得了一定进展，目前采取的主要研究技术是在非金刚石衬底上生长掺杂金刚石多晶膜，其应用方向是耐高温和抗辐射的半导体器件。尽管金刚石薄膜半导体还有许多问题极待解决但其应用前景十分广阔，到２０００年以后，市场销售额将超过金刚石膜工具而跃居首位。     

MPCVD生长半导体金刚石材料的研究现状北大核心

简要介绍了半导体金刚石材料优异的电学和光学性质、主要制备方法以及采用微波等离子体化学气相沉积(MPCVD)技术在制备高质量半导体金刚石材料方面的优势。重点就MPCVD技术在半导体金刚石材料的高速率生长、大尺寸生长、高质量生长以及电学掺杂等四个方面的研究现状进行了详细总结。详细探讨了目前半导体金刚石材料在大尺寸单晶金刚石衬底制备、高质量单晶金刚石外延层生长以及金刚石电学掺杂等方面还存在的一些基本问题。指出在大面积单晶金刚石衬底还没有实现突破的情况下,半导体金刚石材料和器件结构的生长模式。     

电子束辅助热丝CVD法在Si（100）衬底上织构生长金刚石薄膜

电子束辅助热丝ＣＶＤ法在Ｓｉ（１００）衬底上织构生长金刚石薄膜傅广生，王晓辉，于威，韩理（河北大学物理系保定０７１００２）织构生长的金刚石薄膜以其优异的光学、半导体和电学性能而具广泛的应用前景，它一直受到众多研究者的关注。由于金刚石与所用的衬底材料（...     

高温半导体器件的研究现状

金刚石和碳化硅的热特性及电特性决定了它们在电子器件半导体材料中具有最高的材料优质系数，特别适用于在高温环境中应用。本文重点或介绍了金刚石、ＳｉＣ的材料特性、薄膜生长技术和最近器件的研究结果，同时给出了目前存在的问题及解决这些问题的方法。     

宽禁带半导体金刚石

较详细地叙述了当前国内外正处在研究热潮中的金刚石半导体的优越性质、发展状况及其应用和潜在的应用前景.同时分析和比较了金刚石薄膜的各种制备方法,可以看出微波等离子体化学汽相沉积法是较好的制备金刚石薄膜的生长技术,并且分析了该技术的特点和优势.该法在保持适当氩气氛和施加衬底负偏压下还可进一步提高金刚石膜的生长速率和质量.对于金刚石异质(在硅衬底上)成核的基本机理也进行了分析.最后,阐述了研究金刚石半导体薄膜目前需要解决的关键问题及其发展方向.     

金属－半导体金刚石薄膜的接触性质研究

金属－半导体金刚石薄膜的接触性质研究刘兴钊，杨邦朝，李言荣，贾宇明（电子科技大学．成都６１００５４）一、引言金刚石薄膜由于具有载流子饱和速率大、击穿电压高、介电常数低、热导率高等优异性能，被认为是大功率、高瞻及恶劣环境下使用的电子元件的理想材料．在金...     

金刚石的精密激光加工

金刚石的精密激光加工所有材料中，金刚石比任何已知固体都硬；同时在室温下呈现最高的弹性模量、原子密度、德拜温度和热导率。它有化学惰性，在整个光谱范围高度透明，是一种宽带隙半导体材料，又能适用于高温和高电压的场合。上述特性加上用化学蒸汽淀积生长金刚石薄膜...     

单晶材料的晶体质量及其X射线半宽度

本文叙述可以通过单晶材料,特别是外延生长的半导体单晶薄膜材料的X射线衍射峰的半宽度,定性地判断它们的晶体质量的优劣。测量了GaAs、InP、GaP、Insb等化合物半导体单晶,以及以它们为衬底外延生长的单晶薄膜的半宽度,对测量结果和有关问题进行了讨论。     

应用于红外光学中的金刚石薄膜

综述了金刚石薄膜作为红外窗口材料的最新进展,讨论了目前存在的问题和未来的发展     

High-temperature Schottky diodes with thin-film diamond base

High-temperature (500-580°C) current-voltage (I-V ) characteristics of gold contacts to boron-doped homoepitaxial diamond films prepared using a plasma-enhanced chemical vapor deposition (CVD) method are described. Schottky diodes were formed using gold contacts to chemically cleaned boron-doped homoepitaxial diamond films. These devices incorporate ohmic contacts formed by annealing Au(70 nm)/Ti(10 nm) layers in air at 580°C. The experiments with homoepitaxial diamond films show that the leakage current density increases with the contact area. This implies that a nonuniform current distribution exists across the diode, presumably due to crystallographic defects in the diamond film. As a result, Au contacts with an area >1 mm² are essentially ohmic and can be used to form back contacts to Schottky diodes. Schottky diodes fabricated in this matter also show rectifying I-V characteristics in the 25-580°C temperature range     

The electrical properties and device applications of homoepitaxialand polycrystalline diamond films

Electronic applications of semiconductor diamonds are addressed. Doping and electrical properties of these films, formation of low-resistive `ohmic' contacts, surface modification methods, and experimental device applications are discussed. Of particular interest are high-temperature (300°C) MOSFETs and metal contacts to CVD (chemical vapor deposition) diamond films which were used to fabricate high-temperature (580°C) Schottky diodes, rudimentary MESFETs, and blue light-emitting diodes (LEDs). The status of the emerging technology is reviewed with an emphasis on the areas of current research activity     

Ohmic contacts to semiconducting diamond

A solid-state reaction process for producing ohmic contacts to polished natural semiconducting diamond surfaces is discussed. The approach attempts to systematically characterize the processes which occur when metallic films of known thickness are deposited on a smooth diamond surface and annealed in the solid state under controlled conditions. Annealed tantalum/gold and titanium/gold deposits on {100} polished diamond surfaces reduced the resistance by seven orders of magnitude relative to the as-received samples. The interfaces were characterized using metallography, scanning electron microscopy, and secondary ion mass spectrometry     

The effect of surface treatment on the electrical properties ofmetal contacts to boron-doped homoepitaxial diamond film

Both doped and undoped homoepitaxial diamond films were fabricated using microwave plasma-enhanced chemical vapor deposition (CVD). The conductivity of the diamond film is strongly affected by the surface treatment. In particular, exposure of film surface to a hydrogen plasma results in the formation of a conductive layer which can be used to obtain linear (ohmic) I-V characteristics of the Au/diamond contacts, regardless of the doping level. It is shown how the proper chemical cleaning of the boron-doped homoepitaxial diamond surface allows the fabrication of Au-gate Schottky diodes with excellent rectifying characteristics at temperatures of at least 400°C     

The effect of metallization on the ohmic contact resistivity toheavily B-doped polycrystalline diamond films

Three metallization schemes, namely Al/Si, Ti-Au and TiWN-Au contacts on B-doped polycrystalline diamond films have been compared. After annealing at 450°C in nitrogen Al/Si contacts show the lowest contact resistivity in the order of ~10^-7 Ω cm² . TiWN-Au contacts were found to be the most stable contact system in view of interdiffusion and oxidation. Ti-Au contacts show a catastrophic interdiffusion at moderate annealing temperatures and strong oxidation at the very surface. High surface boron doping concentrations lead to low contact resistivities. At sufficient high doping levels current transport through the metal-diamond barrier is due to field emission     

金刚石薄膜半导体器件

介绍了金刚石薄膜的性质、当今金刚石薄膜半导体器件的技术、水平和性能。分析了金刚石薄膜作为半导体器件的优异性能、金刚石相对于硅的半导体器件性能的改善和存在的问题，并指出实现金刚石薄膜半导体器件的障碍。     

Ohmic contacts on diamond by B ion implantation and Ti-Aumetallization

Low-resistance ohmic contacts have been fabricated on a natural IIb semiconducting diamond crystal and on undoped polycrystalline diamond films by B ion implantation and subsequent metallization with a Ti-Au bilayer metallization. A high B concentration of ~7×10²⁰ cm^-3 at the surface was obtained by ion implantation, a post-implant anneal, and a subsequent chemical removal of the graphite layer that resulted from the radiation damage. A bilayer metallization of Ti followed by Au annealed at 850°C yielded a specific contact resistance value on the order of 10^-6 Ω-cm² for chemical-vapor-deposition-grown polycrystalline films and on the order of 10^-5 Ω-cm² for the semiconducting natural crystal     

激光抛光化学气相沉积金刚石膜

讨论了激光抛光金刚石膜机理、影响因素,分析了激光抛光金刚石膜理论模型、激光抛光后金刚石膜的粗糙度极限,提出要实现金刚石膜特别是厚膜的精密抛光须考虑激光辅助复合抛光或其它抛光工艺。     

Electrical property dependence on thickness and morphology of nanocrystalline diamond thin films

In this study, we investigate the influence of nanocrystalline diamond (NCD) thin film morphology and thickness on their electrical properties. NCD films are grown on p-type Si substrates with varied thicknesses from 250 to 788 nm. Electrical contacts are formed from combination of Ti/Au metal layers (100 nm thick each). The I-V and breakdown field measurements are used to analyze the electrical properties of metal/NCD/Si sandwich structure. In addition, NCD films are analyzed by scanning electron microscopy and Raman spectroscopy for better interpretation of the I-V measurements.     

RF化学气相淀积金刚石薄膜

本文论述了金刚石薄膜的优点，比较了化学淀积金刚石薄膜的常用方法的优缺点，主要介绍了电容耦合射频化学气相淀积金刚石薄膜的原理和近期国际对典型电容耦合气相淀积设备的改进研究。