InGaAsP／InP PFBH激光器

采用Ｎ－ＩｎＰ衬底研制ＩｎＧａＡｓＰ／ＩｎＰ激光器和ＤＦＢ激光器在国内已报导过多次，本文介绍用Ｐ－ＩｎＰ衬底研制ＩｎＧａＡｓＰ／ＩｎＰ平面埋层异质结构激光器和ＤＦＢ－ＰＦＢＨ激光器，同时利用晶体生长和晶向的依赖关系，改进埋区的结构，使器件最高激射温度大于１００℃。     

Growth and characterization of ZnMgSrO thin films lattice-matched to ZnO and with deep-UV energy band gap

Quaternary Zn_1-x-yMg_xSr_yO films were grown and characterized in detail, which were observed to be lattice matched to the ZnO by the X-ray diffraction (XRD). Cathodoluminescence measurement showed that near-band UV emission peaks of the samples move toward higher energy as concentration of Mg and Sr increases, to 3.67 eV for the Zn_0.87Mg_0.08Sr_0.05O and to 4.02 eV for the Zn_0.72Mg_0.17Sr_0.11O. It was also observed by the scanning electron microscopy and the XRD that the films are single crystalline. It is believed that the ZnMgSrO films would be one of the important candidate materials for the high quality deep-UV optoelectronic devices.     

Material-selective etching of InP and an InGaAsP alloy

Wet chemical etchants are inexpensive and can be employed easily in device fabrication. Material-selective etchants extend the design flexibility for devices with heterostructures. Several etchants on (100) InP and LPE-grown (100) InGaAsP are studied with emphasis on smooth crystal surfaces and well-defined mesa-structures by use of photoresist. The best results are obtained with the system glycerine: HCl HClO₄ for preferential attack of InP and with the system H₂O H₂SO₄ H₂O₂ for preferential etching of InGaAsP. Detailed information is given on the etching solutions investigated, on the etching conditions and the etching rates of the most useful etchants.     

Growth and characterization of InP nanowires with InAsP insertions

We report on the fabrication by Au-assisted molecular beam epitaxy of InP nanowires with embedded InAsP insertions. The growth temperature affects the nucleation on the nanowire lateral surface. It is therefore possible to grow the wires in two steps: to fabricate an axial heterostructure (at 420 degrees C), and then cover it by a shell (at 390 degrees C). The InAsP alloy composition could be varied between InAs0.35P0.65 and InAs0.5P0.5 by changing the As to P flux ratio. When a shell is present, the InAsP segments show strong room-temperature photoluminescence with a peak wavelength tunable from 1.2 to 1.55 mum by adjusting the As content. If the axial heterostructure has no shell, luminescence intensity is drastically reduced. Low-temperature microphotoluminescence performed on isolated single wires shows narrow peaks with a line width as small as 120 microeV.     

High-power broad-band single-mode InGaAsP/InP superluminescent diode

An InGaAsP/InP separate-confinement double heterostructure having a broad gain profile was used to fabricate superluminescent diodes having high optical power (40 mW), a broad radiation spectrum (65 nm at half-width), and low percent modulation (<1%). Using a cw pump current of 150 mA, 1mW of superluminescence radiation was obtained at the exit from a single-mode optical fiber. Pis’ma Zh. Tekh. Fiz. 25, 16–22 (August 12, 1999)     

LPE growth of InP/InGaAsP/InP heterostructures and separate preparation of high-temperature solutions

We describe a process for separate preparation of high-temperature solutions, which includes a prolonged preannealing (synthesis) at elevated temperatures. This process enables liquid phase epitaxy (LPE) of InGaAsP with highly reproducible physical properties (layer thickness, photoluminescence wavelength, and lattice parameter) and electrical characteristics (current-power curve, dark current, output power, emission wavelength, and threshold and working currents). Using this process, InP/InGaAsP/InP heterostructures can be grown by LPE in a wide temperature range (480–680°C) with highly reproducible parameters, for both photodetectors and light-emitting devices. An original LPE process is proposed which takes advantage of the separate preparation and pouring of high-temperature solutions with the use of graphite equipment.     

ESD induced degradation mechanisms of InGaAsP/InP lasers

The sensitivity of InGaAsP/InP buried crescent lasers to ESD phenomena was deeply analysed, starting from the need to explain and prevent sudden failures during equipment manufacturing and test. Failure analysis allowed us to localize the degradation, which can be explained by means of a simple phenomenological model; finally a physical model was implemented trying to correlate the results of the failure analysis with the proposed failure mechanism.     

InGaAsP/InP有源时分光子交换器件

自行设计并研制成功了两种有源时分光子交换器件：ＩｎＧａＡｓＰ／ＩｎＰ ＥＭＰＢＨ双稳激光器ＩｎＧａＡｓＰ／ＩｎＰ ＭＱＷ ＤＣＰＢＨ双稳激光器，对这两种器件的部分性能作了简要报道。     

High-power 1.8-μm InGaAsP/InP lasers

Separately bounded InGaAsP/InP laser heterostructures with two stressed quantum wells emitting at a wavelength of 1.8 μm were obtained by metalorganic vapor-phase epitaxy. The laser diodes with a strip width of 100 μm provide for an output radiation power of 1.2 W in the continuous operation mode at a temperature of 20°C. A minimum threshold current density was 320 A/cm² and a differential quantum efficiency was η_d=28% for a Fabry-Perot resonator length of 1.4 mm. The internal optical losses in the laser heterostructure studied amounted to 5.6 cm^?1.     

Stress-induced defect migration in InP/InGaAsP double-heterostructure wafers

A low luminescence efficiency ring, concentric with the circular electrical contact, has been observed on p-InP and p-InGaAsP (λ = 1.1 μm) epitaxial layers using cathodoluminescence imaging. This low efficiency region is found to be due to contact alloying. A mechanism based on the thermal migration of a defect in the strain field produced by the p-contact is proposed.     

InGaAsP/InP long wavelength quantum well infrared photodetectors

High quality InGaAsP/InP MQWs structures, grown by solid source molecular beam epitaxy, with different doping concentrations in the wells were investigated. High doping concentrations benefits absorption but is not good for dark current. The photocurrent spectra and peak values are sensitive to applied voltage. The total photocurrent comes from the electrons excited to two excited states. The decrease of the photocurrent peak value at high voltage can be explained by the reduction of photogenerated electrons. The detectivity of the InGaAsP/InP QWIP measured at a bias of − 2.5 V at 20 K is greater than , which is comparable to the GaAs/AlGaAs QWIPs.     

The properties of InGaAsP/InP heterolasers with step-divergent waveguides

InGaAsP/InP laser heterostructures with step-divergent waveguides and two stressed quantum wells were obtained by metalorganic VPE. The lasers emitting at 1.55 μm provide for an intrinsic quantum yield of η_i=85%. An optical power of 5.2 W in the continuous operation mode was achieved at a laser diode temperature of 10°C. The internal optical losses in the laser heterostructure studied amount to 3.6 cm⁻¹, which is comparable with the level of losses in similar structures with uniform divergent waveguides.     

InP/InGaAsP异质结ICP刻蚀表面损伤(英文)

本文详细研究了采用Cl_2/H_2刻蚀气体时,ICP刻蚀系统对InP/InGaAsP材料表面损伤的影响。通过设计特殊结构的InP/InGaAsP多量子阱结构,测量刻蚀区域及非刻蚀区域的光荧光强度的变化,并结合高斯深度分布模型对刻蚀损伤进行定量研究。详细研究ICP刻蚀系统中的压强、ICP功率、RF功率以及Cl_2/H_2刻蚀气体组分对损伤程度的影响。基于这些结果优化得到一组低损伤参数,最终实现刻蚀损伤深度小于16nm。     

Gradient tuning of the direction of emission from InGaAsP/InP heterolasers

A new acoustooptical effect in laser heterostructures is revealed, according to which the laser emission direction is modulated by alternating strain that is induced in the laser structure by an external ultrasonic wave. An important feature of the observed phenomenon is that the amplitude of modulation increases with the frequency of the ultrasonic wave.     

10×10InGaAsP/InP阵列波导光栅器件的研制

研制了脊形波导结构的10×10InGaAsP/InP阵列波导光栅器件(AWG),并采用掺铒光纤放大器(EDFA)作宽带光源测量了AWG的近场图以及分光特性。     

Gain measurements of Fabry-Perot InP/InGaAsP lasers using an ultrahigh-resolution spectrometer

Measurements of the optical gain in a semiconductor laser using a 20 MHz resolution optical spectrum analyzer are presented for what is believed to be the first time. The high resolution allows for accurate gain measurements close to the lasing threshold. This is demonstrated by gain measurements on a bulk InGaAsP 1.5 microm Fabry-Perot laser. Combined with direct measurement of transparency carrier density values, parameters were determined for characterizing the gain at a range of wavelengths and temperatures. The necessity of the use of a logarithmic gain model is shown.     

Growth and characterization of InP ringlike quantum-dot molecules grown by solid-source molecular beam epitaxy

In this paper, we have studied the fabrication of InP ringlike quantum-dot molecules on GaAs(001) substrate grown by solid-source molecular beam epitaxy using droplet epitaxy technique and the effect of In deposition rate on the physical and optical properties of InP ringlike quantum-dot molecules. The In deposition rate is varied from 0.2 ML/s to 0.4, 0.8 and 1.6 ML/s. The surface morphology and cross-section were examined by ex-situ atomic force microscope and transmission electron microscope, respectively. The increasing of In deposition rate results in the decreasing of outer and inner diameters of InP ringlike quantum-dot molecules and height of InP quantum dots but increases the InP quantum dot and ringlike quantum-dot molecule densities. The photoluminescence peaks of InP ringlike quantum-dot molecules are blue-shifted and FWHM is narrower when In deposition rate is bigger.     

Low loss high mesa optical waveguides based on InGaAsP/InP heterostructures

Low loss high mesa optical waveguides were fabricated on InGaAsP/InP heterostructures by utilizing inductively-coupled-plasma reactive ion etching (ICP-RIE) and electron beam lithography technique. The fabrication process was optimized by measuring sidewall roughness of deep-etched waveguides. Atomic force microscope loaded with carbon nanotude was used to obtain three-dimensional image of the etched sidewall of waveguides. The obtained statistical information such as rms roughness and correlation length was used to theoretically calculate scattering loss of waveguides. Several waveguides with different number of sharp bends and the length were fabricated and their propagation losses were measured by modified Fabry-Perot method. The measured propagation losses were compared with theoretically calculated losses.     

Two-section InGaAsP/InP Fabry-Perot laser with a 12 nm tuning range

Wavelength tuning over a 12 nm range is obtained for a two-section InGaAsP/InP Fabry-Perot laser (λ=1.55 μm). The method used to vary the gain profile of the laser allows one to predict the range of possible wavelength tuning. Pis’ma Zh. Tekh. Fiz. 23, 10–15 (March 26, 1997)