A 1.8-mW CMOS ΣΔ modulator with integrated mixer forA/D conversion of IF signals

In this paper, the design of a continuous-time baseband sigma-delta (ΣΔ) modulator with an integrated mixer for intermediate-frequency (IF) analog-to-digital conversion is presented. This highly linear IF ΣΔ modulator digitizes a GSM channel at intermediate frequencies up to 50 MHz. The sampling rate is not related to the input IF and is 13.0 MHz in this design. Power consumption is 1.8 mW from a 2.5-V supply. Measured dynamic range is 82 dB, and third-order intermodulation distortion is -84 dB for two -6-dBV IF input tones. Two modulators in quadrature configuration provide 200-kHz GSM bandwidth. Active area of a single IF ΣΔ modulator is 0.2 mm² in 0.35-μm CMOS     

A 80-MHz bandpass ΔΣ modulator for a 100-MHz IFreceiver

A fully differential fourth-order bandpass ΔΣ modulator is presented. The circuit is targeted for a 100-MHz GSM/WCDMA-multimode IF-receiver and operates at a sampling frequency of 80 MHz. It combines frequency downconversion with analog-to-digital conversion by directly sampling an input signal from an intermediate frequency of 100 MHz to a digital intermediate frequency of 20 MHz. The modulator is based on a double-delay single-op amp switched-capacitor (SC) resonator structure which is well suited for low supply voltages. Furthermore, the center frequency of the topology is insensitive to different component nonidealities. The measured peak signal-to-noise ratio is 80 and 42 dB for 270 kHz (GSM) and 3.84-MHz (WCDMA) bandwidths, respectively. The circuit is implemented with a 0.35-μm CMOS technology and consumes 56 mW from a 3.0-V supply     

80 MHz bandpass delta-sigma modulator using switched-capacitorresonator structure

A fully differential 80 MHz fourth-order bandpass ΔΣ modulator, meant for a 100 MHz GSM/WCDMA multimode IF receiver, is presented. The modulator is based on a double-delay single opamp SC-resonator structure which is well suited for low supply voltages. Furthermore, the centre frequency of the topology is insensitive to different component variances. The measured peak SNR is 78 dB and 43.3 dB for 270 kHz (GSM) and 3.84 MHz (WCDMA) bandwidths, respectively     

Quadrature bandpass ΔΣ modulation for digital radio

A quadrature bandpass ΔΣ modulator IC facilitates monolithic digital-radio-receiver design by allowing straightforward “complex A/D conversion” of an image reject mixer's I and Q, outputs. Quadrature bandpass ΔΣ modulators provide superior performance over pairs of real bandpass ΔΣ modulators in the conversion of complex input signals, using complex filtering embedded in ΔΣ loops to efficiently realize asymmetric noise-shaped spectra. The fourth-order prototype IC, clocked at 10 MHz, converts narrowband 3.75-MHz I and Q inputs and attains a dynamic range of 67 dB in 200-kHz (GSM) bandwidth, increasing to 71 and 77 dB in 100- and 30-kHz bandwidths, respectively. Maximum signal-to-noise plus distortion ratio (SNDR) in 200-kHz bandwidth is 62 dB. Power consumption is 130 mW at 5 V. Die size in a 0.8-μm CMOS process is 2.4×1.8 mm²      

A 3.3-V CMOS 10.7-MHz sixth-order bandpass ΣΔ modulatorwith 74-dB dynamic range

A 3.3-V bandpass ΣΔ modulator for IF sampling at 10.7 MHz in digital radio applications has been developed. The modulator presents a sixth-order single-loop architecture and features a 74-dB dynamic range in a 2OO-kHz signal bandwidth (FM signal), while for a 9-kHz signal bandwidth (AM signal) the dynamic range is 88 dB. The modulator has been integrated in a standard 0.35-μm CMOS technology using switched-capacitor technique and consumes 76 mW from a single 3.3V supply     

A CMOS 0.8-μm transistor-only 1.63-MHz switched-current bandpassΣΔ modulator for AM signal A/D conversion

This paper presents a CMOS 0.8-μm switched-current (SI) fourth-order bandpass ΣΔ modulator (BP-ΣΔM) IC capable of handling signals up to 1.63 MHz with 105-bit resolution and 60-mW power consumption from a 5-V supply voltage. This modulator Is intended for direct A/D conversion of narrow-band signals within the commercial AM band, from 530 kHz to 1.6 MHz. Its architecture is obtained by applying a low-pass-to-bandpass transformation (z^-1 →-z^-2) to a 1-bit second-order low-pass ΣΔ modulator (LP-ΣΔM). The design of basic building blocks is based upon a detailed analysis of the influence of SI errors on the modulator performance, followed by design optimization. Memory-cell errors have been identified as the dominant ones. In order to attenuate these errors, fully differential regulated-folded cascode memory cells are employed. Measurements show a best SNR peak of 65 dB for signals of 10-kHz bandwidth and an intermediate frequency (IF) of 1.63 MHz. A correct noise-shaping filtering is achieved with a sampling frequency of up to 16 MHz     

A two-path bandpass ΣΔ modulator for digital IFextraction at 20 MHz

Oversampled bandpass A/D converters based on sigma-delta (ΣΔ) modulation can be used to robustly digitize the types of narrowband intermediate frequency (IF) signals that arise in radios and cellular systems. This paper proposes a two-path architecture for a fourth-order, bandpass modulator that is more tolerant of analog circuit limitations at high sampling speeds than conventional implementations based on the use of switched-capacitor biquadratic filters. An experimental prototype employing the two-path topology has been integrated in a 0.6-μm, single-poly, triple-metal CMOS technology with capacitors synthesized from a stacked metal structure. Two interleaved paths clocked at 40 MHz digitize a 200-kHz bandwidth signal centered at 20 MHz with 75 dB of dynamic range while suppressing the undesired mirror image signal by 42 dB. At low input signal levels, the mixing of spurious tones at DC and f_s/2 with the input appears to degrade the performance of the modulator; out-of-band sinusoidal dither is shown to be an effective means of avoiding this degradation. The experimental modulator dissipates 72 mW from a 3.3 V supply     

Architecture, design, and test of continuous-time tunableintermediate-frequency bandpass delta-sigma modulators

This paper examines the architecture, design, and test of continuous-time tunable intermediate-frequency (IF) fourth-order bandpass delta-sigma (BP ΔΣ) modulators. Bandpass modulators sampling at high IFs (~100 MHz) allow direct sampling of the RF signal-reducing analog hardware and make it easier to realize completely software programmable receivers. This paper presents circuit design of and test results from continuous-time fourth-order BP ΔΣ modulators fabricated in AlInAs/GaInAs heterojunction bipolar technology with a peak unity current gain cutoff frequency (f_T) of 80 GHz and a maximum frequency of oscillation (f_MAX) of about 130 GHz. Operating from ±5-V power supplies, a fabricated 180-MHz IF fourth-order ΔΣ modulator sampling at 4 GS/s demonstrates stable behavior and achieves 75.8 dB of signal-to-(noise+distortion)-ratio (SNDR) over a 1-MHz bandwidth. Narrowband performance (~1 MHz) performance of these modulators is limited by thermal/device noise while broadband performance (~60 MHz), is limited by quantization noise. The high sampling frequency (4 GS/s) in this converter is dictated by broadband (60 MHz) performance requirements     

A 50-MHz multibit sigma-delta modulator for 12-b 2-MHz A/Dconversion

The authors examine the application of oversampling techniques to analog-to-digital conversion at rates exceeding 1 MHz. A cascaded multibit sigma-delta (ΣΔ) modulator that substantially reduces the oversampling ratio required for 12-b conversion while avoiding stringent component matching requirements is introduced. Issues concerning the design and implementation of the modulator are presented. At a sampling rate of 50 MHz and an oversampling ratio of 24, an implementation of the modulator in a 1-μm CMOS technology achieves a dynamic range of 74 dB at a Nyquist conversion rate of 2.1 MHz. The experimental modulator is a fully differential circuit that operates from a single 5-V power supply and does not require calibration or component trimming     

A re-configurable MASH 2-2 bandpass DQEFM for multi-standard applications

The design, analysis and implementation of a multi-stage noise shaping (MASH) bandpass modulator that employs a differentially quantized error feedback modulator (DQEFM) structure is described. The re-configurability, reduction of power-hungry active blocks and reduced sensitivity to circuit non-idealities makes this proposed bandpass modulator a suitable candidate for a digital intermediate frequency receiver system. The mathematical analysis and simulation results indicate the resemblance of the proposed modulator with the conventional sigma-delta modulator. The circuit level simulations indicate the better performance of the proposed modulator in terms of hardware complexity and power. The proposed cascaded modulator when implemented using 45nm CMOS process attains a signal-to-noise plus distortion ratio of 81.4 dB for a bandwidth of 200 kHz (GSM) and 61 dB for a bandwidth of 5 MHz (WCDMA). The circuit level simulation of the proposed bandpass architecture indicates a power consumption of 3.7 mW and 6.9 mW for GSM and WCDMA modes with 1V supply.     

A 900-mV low-power ΔΣ A/D converter with 77-dB dynamicrange

The design of a low-voltage and low-power ΔΣ analog-to-digital (A/D) converter is presented. A third-order single-loop ΔΣ modulator topology is implemented with the differential modified switched op-amp technique. The modulator topology has been transformed as to accommodate half-delay integrators. Dedicated low-voltage circuit building blocks, such as a class AB operational transconductance amplifier, a common-mode feedback amplifier, and a comparator are treated, as well as low-voltage design techniques. The influence of very low supply voltage on power consumption is discussed. Measurement results of the 900-mV ΔΣ A/D converter show a 77-dB dynamic range in a 16-kHz bandwidth and a 62-dB peak signal-to-noise ratio for a 40-μW power consumption     

A 1.8-V ΔΣ modulator interface for an electretmicrophone with on-chip reference

The design of a delta-sigma (ΔΣ) analog-to-digital converter (ADC) for direct voltage readout of an electret microphone is presented. The ADC is integrated on the same chip with a bandgap voltage reference and is designed to be packaged together with an electret microphone. Having a power consumption of 1.7 mW from a supply voltage of 1.8 V, the circuit is well suited for use in mobile applications. The single-loop, single-bit, fourth-order ΔΣ ADC operates at 64 times oversampling for a signal bandwidth of 11 kHz. The measured dynamic range is 80 dB and the peak signal-to-(noise+distortion) ratio is 62 dB. The harmonic distortion is minimized by using an integrator with an instrumentation amplifier-like input which directly integrates the 125-mV peak single-ended voltage generated by the microphone. A combined continuous-time/switched-capacitor design is used to minimize power consumption     

A 10.7-MHz IF-to-baseband ΣΔ A/D conversion system forAM/FM radio receivers

ΣΔ modulation with integrated quadrature mixing is used for analog-to-digital (A/D) conversion-of a 10.7-MHz IF input signal in an AM/FM radio receiver. After near-zero IF mixing to a 165 kHz offset frequency, the I and Q signals are digitized by two fifth-order, 32 times oversampling continuous-time ΣΔ modulators. A prototype IC includes digital filters for decimation and the shift of the near-zero-IF to dc. The baseband output signal has maximum carrier-to-noise ratios of 94 dB in 9 kHz (AM) and 79 dB in 200 kHz (FM), with 97 and 82 dB dynamic range, respectively. The IM3 distance is 84 dB at full-scale A/D converter input signal. Including downconversion and decimation filtering, the IF A/D conversion system occupies 1.3 mm² in 0.25-μm standard digital CMOS. The ΣΔ modulators consume 8 mW from a 2.5-V supply voltage, and the digital filters consume 11 mW     

A 5-mW sigma-delta modulator with 84-dB dynamic range for GSM/EDGE

A sigma-delta modulator designed as part of a complete GSM/EDGE (enhanced data rate for GSM evolution) transceiver is described. High-resolution wide-band analog-to-digital converters enable the receiver to rely on digital processing, rather than analog filtering, to extract the desired signal from blocking channels. High linearity and low power consumption are the most stringent requirements for the converters in this wireless application. A single-bit 2-2-cascaded modulator operating at 13 MHz has been adopted for high linearity and stability. Low-power low-voltage techniques have been applied along with a top-down design approach in order to minimize the power dissipation. The ΣΔ modulator achieves 13.5 bits of resolution over a bandwidth of 180 kHz while dissipating 5 mW from 1.8-V and 2.4-V supplies. The circuit has been implemented in the CMOS portion of a 0.4-μm (drawn) BiCMOS technology and occupies an active area of 0.4 mm²     

A low power sigma-delta modulator for dual-mode wide-band receiver

This work presents a low power cascaded sigma-delta modulator for GSM and WCDMA applications. The proposed modulator has the characteristics of wide bandwidth for WCDMA applications and low distortion in the low frequency band for GSM applications. Low-distortion and interpolative techniques are used in this modulator to enhance the performance. The low-distortion technique has not only the swing-suppressing characteristic, but it can reduce the power consumption. Moreover, the resolution can be improved even under non-linearity effects. An experimental chip is implemented in the standard 0.18-μm 1P6M CMOS technology. The measurements indicate a dynamic range of 76/68 dB and a peak signal to noise plus distortion ratio of 70/61 dB for GSM/WCDMA applications. The core area is 1 × 1.4 mm² and the power consumption is 10.5/28 mW for GSM/WCDMA at 1.8 V.     

A 3.2-GHz second-order delta-sigma modulator implemented in InP HBTtechnology

This paper presents a second-order delta-sigma (ΔΣ) modulator fabricated in a 70 GHz (f_T), 90 GHz (f_max) AlInAs-GaInAs heterojunction bipolar transistor (HBT) process on InP substrates. The modulator is a continuous time, fully differential circuit operated from ±5 volt supplies and dissipates 1 W. At a sample rate of 3.2 GHz and a signal bandwidth of 50 MHz (OSR=32100 MSPS Nyquist rate) the modulator demonstrates a Spur Free Dynamic Range (SFDR) of 71 dB (12-b dynamic range). The modulator achieves the ideal signal-to-noise ratio (SNR) of 55 dB for a second-order modulator at an oversampling ratio (OSR) of 32. The design of a digital decimation filter for this modulator is complete and the filter is currently in fabrication in the same technology. This work demonstrates the first ΔΣ modulator in III-V technology with ideal performance and provides the foundation for extending the use of ΔΣ modulator analog-to-digital converters (ADC's) to radio frequencies (RF)     

A low oversampling ratio 14-b 500-kHz ΔΣ ADC with aself-calibrated multibit DAC

Delta-sigma (ΔΣ) analog-to-digital converters (ADC's) rely on oversampling to achieve high-resolution. By applying multibit quantization to overcome stability limitations, a circuit topology with greatly reduced oversampling requirements is developed. A 14-bit 500-kHz ΔΣ ADC is described that uses an oversampling ratio of only 16. A fourth-order embedded modulator, four-bit quantizer, and self-calibrated digital-to-analog converter (DAC) are used to achieve this performance. Although the high-order embedded architecture was previously thought to be unstable, it is shown that with proper design, a robust system can be obtained. Circuit design and implementation in a 1.2-μm CMOS process are presented. Experimental results give a dynamic range of 84 dB with a sampling rate of 8 MHz and oversampling ratio of 16. This is the lowest oversampling ratio for this resolution and bandwidth achieved to date     

低电压低功耗带通Sigma Delta调制器的设计

本文设计了一种符合双标准接收机要求的一位四阶带通调制器.为了实现低电压低功耗设计的要求,改进了调制器结构,并进行了从系统到电路模块的优化.采用0.35μm CMOS工艺,Hspice和Matlab联合模拟表明:在2V电源电压下,调制器在GSM和WCDMA系统中的DR分别为86dB和36dB,而功耗仅为10.5mW和12mW.     

An 81-MHz IF receiver in CMOS

An 81-MHz CMOS IF receiver for digital wireless applications is presented. The receiver consists of a continuous-time IF amplifier, a subsampling switched-capacitor gain stage, and a sixth-order bandpass ΣΔ A/D converter. Incorporating 24 dB of programmable gain, the receiver achieves 92 dB of dynamic range in a 200 kHz bandwidth. Due to its IF sampling nature, the reciever is immune to de offset, flicker noise, and errors due to mismatches between I and Q signal paths. By utilizing a pseudo two-path resonator architecture in the bandpass ΣΔ A/D converter, a stable passband center frequency which is immune to capacitor mismatch is achieved. Implemented in 0.8-μm CMOS, this chip uses a single 3 V supply and consumes 14.4 mW of power     

A double-sampling pseudo-two-path bandpass ΔΣ modulator

A double-sampling pseudo-two-path bandpass ΔΣ modulator is proposed. This modulator has an output rate equal to twice the clock rate, uses n/2 operational amplifiers (op-amps) for an nth-older noise transfer function, and has reduced clock feedthrough in the signal path band. The required clocks can be simpler to implement than the conventional pseudo-two-path techniques. The measured signal-to-noise ratio and dynamic range of the fourth-order double-sampling pseudo-two-path bandpass ΔΣ modulator in a 30-kHz bandwidth at a center frequency of 2.5 MHz (at a clock frequency of 5 MHz) are 62 and 68 dB, respectively