Sintering Silicon Nitride Ceramics in Air

Silicon nitride (Si₃N₄) ceramics, prepared with Y₂O₃ and Al₂O₃ sintering additives, have been densified in air at temperatures of up to 1750°C using a conventional MoSi₂ element furnace. At the highest sintering temperatures, densities in excess of 98% of theoretical have been achieved for materials prepared with a combined sintering addition of 12 wt% Y₂O₃ and 3 wt% Al₂O₃. Densification is accompanied by a small weight gain (typically <1–2 wt%), because of limited passive oxidation of the sample. Complete α- to β-Si₃N₄ transformation can be achieved at temperatures above 1650°C, although a low volume fraction of Si₂N₂O is also observed to form below 1750°C. Partial crystallization of the residual grain-boundary glassy phase was also apparent, with β-Y₂Si₂O₇ being noted in the majority of samples. The microstructures of the sintered materials exhibited typical β-Si₃N₄ elongated grain morphologies, indicating potential for low-cost processing of in situ toughened Si₃N₄-based ceramics.     

Thermal Conductivity of β-Si3N4: II, Effect of Lattice Oxygen

Dense β-Si₃N₄ with various Y₂O₃/SiO₂ additive ratios were fabricated by hot pressing and subsequent annealing. The thermal conductivity of the sintered bodies increased as the Y₂O₃/SiO₂ ratio increased. The oxygen contents in the β-Si₃N₄ crystal lattice of these samples were determined using hot-gas extraction and electron spin resonance techniques. A good correlation between the lattice oxygen content and the thermal resistivity was observed. The relationship between the microstructure, grain-boundary phase, lattice oxygen content, and thermal conductivity of β-Si₃N₄ that was sintered at various Y₂O₃/SiO₂ additive ratios has been clarified.     

Influence of Yttria–Alumina Content on Sintering Behavior and Microstructure of Silicon Nitride Ceramics

The present study investigates the influence of the content of Y₂O₃–Al₂O₃ sintering additive on the sintering behavior and microstructure of Si₃N₄ ceramics. The Y₂O₃:Al₂O₃ ratio was fixed at 5:2, and sintering was conducted at temperatures of 1300°–1900°C. Increased sintering-additive content enhanced densification via particle rearrangement; however, phase transformation and grain growth were unaffected by additive content. After phase transformation was almost complete, a substantial decrease in density was identified, which resulted from the impingement of rodlike β-Si₃N₄ grain growth. Phase transformation and grain growth were concluded to occur through a solution–reprecipitation mechanism that was controlled by the interfacial reaction.     

Densification of Si3N4 with LiYO2 Additive

This paper deals with the densification and phase transformation during pressureless sintering of Si₃N₄ with LiYO₂ as the sintering additive. The dilatometric shrinkage data show that the first Li₂O- rich liquid forms as low as 1250°C, resulting in a significant reduction of sintering temperature. On sintering at 1500°C the bulk density increases to more than 90% of the theoretical density with only minor phase transformation from α-Si₃N₄ to β-Si₃N₄ taking place. At 1600°C the secondary phase has been completely converted into a glassy phase and total conversion of α-Si₃N₄ to β-Si₃N₄ takes place. The grain growth is anisotropic, leading to a microstructure which has potential for enhanced fracture toughness. Li₂O evaporates during sintering. Thus, the liquid phase is transient and the final material might have promising mechanical properties as well as promising high-temperature properties despite the low sintering temperature. The results show that the Li₂O−Y₂O₃ system can provide very effective low-temperature sintering additives for silicon nitride.     

Effect of α to β (β') Phase Transition on the Sintering of Silicon Nitride Ceramics

By using α-Si₃N₄ and β-Si₃N₄ starting powders with similar particle size and distribution, the effect of α-β (β') phase transition on densification and microstructure is investigated during the liquid-phase sintering of 82Si₃N₄·9Al₂O₃·9Y₂O₃ (wt%) and 80Si₃N₄·13Al₂O₃·5AIN·5AIN·2Y₂O₃. When α-Si₃N₄ powder is used, the grains become elongated, apparently hindering the densification process. Hence, the phase transition does not enhance the densification.     

Formation of α-Si3N4 Solid Solutions in the System Si3N4-A1N-Y2O3

The subsolidus phase diagram of the quasiternary system Si₃N₄-AlN-Y₂O₃ was established. In this system α-Si₃N₄ forms a solid solution with 0.1Y₂O₃: 0.9 AIN. The solubility limits are represented by Y_0.33Si_10.5Al_1.5O_0.5N_15.5 and Y_0.67Si₉A1₃ON₁₅. At 1700°C an equilibrium exists between β-Si₃N₄ and this solid solution.     

New Strategies for Preparing NanoSized Silicon Nitride Ceramics

We report the preparation of nanosized silicon nitride (Si₃N₄) ceramics via high-energy mechanical milling and subsequent spark plasma sintering. A starting powder mixture consisting of ultrafine β-Si₃N₄ and sintering additives of 5-mol% Y₂O₃ and 2-mol% Al₂O₃ was prepared by high-energy mechanical milling. After milling, the powder mixture was mostly transformed into a non-equilibrium amorphous phase containing a large quantity of well-dispersed nanocrystalline β-Si₃N₄ particles. This powder precursor was then consolidated by spark plasma sintering at a temperature as low as 1600°C for 5 min at a heating rate of 300°C/min. The fully densified sample consisted of homogeneous nano-Si₃N₄ grains with an average diameter of about 70 nm, which led to noticeable high-temperature ductility and elevated hardness.     

Ionic Conductivity of the System Si-Al-O-N from 850° to 1400°C

Electrical conductivity was measured from 850° to 1400°C for β-sialon and pure X phase as well as for the sintered system Si₃N₄-Al₂O₃, containing β-sialon, X phase, β-Si₃N₄, and glassy phase. Ionic conductivity was measured at >1000°C. The charge carriers were identified by electrolysis. The results showed that pure β-sialon is ionically conducting because of Si⁴⁺ migration for the temperature range studied. Pure X phase shows ionic conduction by Si⁴⁺ above 1000°; below 1000°C, it shows electronic conduction because of impurities. The conductivity of the sintered system Si₃N₄-Al₂O₃ containing β-sialon, β-Si₃N₄ X phase, and glassy phase changes as the relative quantities of β -sialon and X phase change. The apparent activation energies for the ionic and electronic conductivities are 45 and 20 kcal/mol, respectively.     

Novel Two-Step Sintering Process to Obtain a Bimodal Microstructure in Silicon Nitride

A two-step sintering process is described in which the first step suppresses densification while allowing the α-to-β phase transformation to proceed, and the second step, at higher temperatures, promotes densification and grain growth. This process allows one to obtain a bimodal microstructure in Si₃N₄ without using β-Si₃N₄ seed crystals. A carbothermal reduction process was used in the first step to modify the densification and transformation rates of the compacts consisting of Si₃N₄, Y₂O₃, Al₂O₃, and a carbon mixture. The carbothermal reduction process reduces the oxygen:nitrogen ratio of the Y-Si-Al-O-N glass that forms, which leads to the precipitation of crystalline oxynitride phases, in particular, the apatite phase. Precipitation of the apatite phase reduces the amount of liquid phase and retards the densification process up to 1750°C; however, the α-to-β phase transformation is not hindered. This results in the distribution of large β-nuclei in a porous fine-grained β-Si₃N₄ matrix. Above 1750°C, liquid formed by the melting of apatite resulted in a rapid increase in densification rates, and the larger β-nuclei also grew rapidly, which promoted the development of a bimodal microstructure.     

Microstructure and Mechanical Properties of the in situβ-Si3N4/α'-SiAlON Composite

The in situ β-Si₃N₄/α'-SiAlON composite was studied along the Si₃N₄–Y₂O₃: 9 AlN composition line. This two phase composite was fully densified at 1780°C by hot pressing Densification curves and phase developments of the β-Si₃N₄/α'-SiAlON composite were found to vary with composition. Because of the cooperative formation of α'-Si AlON and β-Si₃N₄ during its phase development, this composite had equiaxed α'-SiAlON (∼0.2 μm) and elongated β-Si₃N₄ fine grains. The optimum mechanical properties of this two-phase composite were in the sample with 30–40%α', which had a flexural strength of 1100 MPa at 25°C 800 MPa at 1400°C in air, and a fracture toughness 6 Mpa·m^1/2. α'-SiAlON grains were equiaxed under a sintering condition at 1780°C or lower temperatures. Morphologies of the α°-SiAlON grains were affected by the sintering conditions.     

Effect of Sintering Additives on Microstructure and Mechanical Properties of Porous Silicon Nitride Ceramics

Porous silicon nitride (Si₃N₄) ceramics with about 50% porosity were fabricated by pressureless sintering of α-Si₃N₄ powder with 5 wt% sintering additive. Four types of sintering aids were chosen to study their effect on the microstructure and mechanical properties of porous Si₃N₄ ceramics. XRD analysis proved the complete formation of a single β-Si₃N₄ phase. Microstructural evolution and mechanical properties were dependent mostly on the type of sintering additive. SEM analysis revealed the resultant porous Si₃N₄ ceramics as having high aspect ratio, a rod-like microstructure, and a uniform pore structure. The sintered sample with Lu₂O₃ sintering additive, having a porosity of about 50%, showed a high flexural strength of 188 MPa, a high fracture toughness of 3.1 MPa·m^1/2, due to fine β-Si₃N₄ grains, and some large elongated grains.     

Effect of Sintering Additives on Superplastic Deformation of Nano-Sized β-Silicon Nitride Ceramics

The effect of sintering additives on superplastic deformation of nano-sized β-Si₃N₄ ceramics has been studied by compression tests at 1500°C. The sintering additives were (i) Y₂O₃+Al₂O₃; (ii) Y₂O₃+MgO; and (iii) Y₂O₃. Nano-sized Si₃N₄ ceramics with different sintering additives had similar microstructures. For the first two sintering additives, the stress exponents were determined to be ∼2 at a lower stress region and ∼1 at a higher stress region, where the strain rate was dependent on sintering additives only at the higher stress region, and was independent at the lower stress region. Nano-ceramics with Y₂O₃ additives had only one region, which had a stress exponent of ∼1 within the stress range that we studied. The results could be explained by the different deformation mechanisms at the higher and lower stress regions and the influence of viscosity of liquid phase on the transition stress.     

Processing and Thermal Conductivity of Sintered Reaction-Bonded Silicon Nitride: (II) Effects of Magnesium Compound and Yttria Additives

The effects of the magnesium compound and yttria additives on the processing, microstructure, and thermal conductivity of sintered reaction-bonded silicon (Si) nitride (SRBSN) were investigated using two additive compositions of Y₂O₃–MgO and Y₂O₃–MgSiN₂, and a high-purity coarse Si powder as the starting powder. The replacement of MgO by MgSiN₂ leads to the different characteristics in RBSN after complete nitridation at 1400°C for 8 h, such as a higher β-Si₃N₄ content but finer β-Si₃N₄ grains with a rod-like shape, different crystalline secondary phases, lower nitrided density, and coarser porous structure. The densification, α→β phase transformation, crystalline secondary phase, and microstructure during the post-sintering were investigated in detail. For both cases, the similar microstructure observed suggests that the β-Si₃N₄ nuclei in RBSN may play a dominant role in the microstructural evolution of SRBSN rather than the intergranular glassy chemistry during post-sintering. It is found that the SRBSN materials exhibit an increase in the thermal conductivity from ∼110 to ∼133 (Wm·K)⁻¹ for both cases with the increased time from 6 to 24 h at 1900°C, but there is almost no difference in the thermal conductivity between them, which can be explained by the similar microstructure. The present investigation reveals that as second additives, the MgO is as effective as the MgSiN₂ for enhancing the thermal conductivity of SRBSN.     

Effect of Grain Growth of β-Silicon Nitride on Strength, Weibull Modulus, and Fracture Toughness

β-Si₃N₄ powder containing 1 mol% of equimolar Y₂O₃–Nd₂O₃ was gas-pressure sintered at 2000°C for 2 h (SN2), 4 h (SN4), and 8 h (SN8) in 30-MPa nitrogen gas. These materials had a microstructure of " in-situ composites" as a result of exaggerated grain growth of some β Si₃N₄ grains during firing. Growth of elongated grains was controlled by the sintering time, so that the desired microstructures were obtained. SN2 had a Weibull modulus as high as 53 because of the uniform size and spatial distribution of its large grains. SN4 had a fracture toughness of 10.3 MPa-m^1/2 because of toughening provided by the bridging of elongated grains, whereas SN8 showed a lower fracture toughness, possibly caused by extensive microcracking resulting from excessively large grains. Gas-pressure sintering of β-Si₃N₄ powder was shown to be effective in fostering selective grain growth for obtaining the desired composite microstructure.     

The α–β Transformation in Silicon Nitride Single Crystals

Single crystals of α-Si₃N₄ were annealed at 2000°–2150°C. The β phase was detected after annealing at 2150°C only when the crystals were surrounded by MgO·3Al₂O₃ or Y₂O₃ powders. On the other hand, no evidence of the α–β transformation was found when the crystals were annealed without additives. The solution–precipitation mechanism was concluded to be the dominant factor in the α–β transformation of Si₃N₄.     

Spark Plasma Sintered Silicon Nitride Ceramics with High Thermal Conductivity Using MgSiN2 as Additives

Silicon nitride ceramics were prepared by spark plasma sintering (SPS) at temperatures of 1450°–1600°C for 3–12 min, using α-Si₃N₄ powders as raw materials and MgSiN₂ as sintering additives. Almost full density of the sample was achieved after sintering at 1450°C for 6 min, while there was about 80 wt%α-Si₃N₄ phase left in the sintered material. α-Si₃N₄ was completely transformed to β-Si₃N₄ after sintering at 1500°C for 12 min. The thermal conductivity of sintered materials increased with increasing sintering temperature or holding time. Thermal conductivity of 100 W·(m·K)⁻¹ was achieved after sintering at 1600°C for 12 min. The results imply that SPS is an effective and fast method to fabricate β-Si₃N₄ ceramics with high thermal conductivity when appropriate additives are used.     

Subsolidus Phase Relationships in Part of the System Si,Al,Y/N,O: The System Si3N4─AIN─YN─Al2O3─Y2O3

The subsolidus phase relationships in the system Si,Al,Y/N,O were determined. Thirty-nine compatibility tetrahedra were established in the region Si₃N₄─AIN─Al₂O₃─Y₂O₃. The subsolidus phase relationships in the region Si₃N₄─AIN─YN─Y₂O₃ have also been studied. Only one compound, 2YN:Si₃N₄, was confirmed in the binary system Si₃N₄─YN. The solubility limits of the α'─SiAION on the Si₃N₄─YN:3AIN join were determined to range from m = 1.3 to m = 2.4 in the formula Y _{m /3}Si_{12- m} Al _m N₁₆. No quinary compound was found. Seven compatibility tetrahedra were established in the region Si₃N₄─AIN─YN─Y₂O₃.     

Change of Crystal Phases and Microstructure of Amorphous Si-C-N Powder by Hot Pressing

An amorphous Si-C-N powder with Y₂O₃ and Al₂O₃ powder as sintering additives was hot-pressed at 1900°C for 120 min in a nitrogen atmosphere. Changes in the crystalline phases and microstructure of the amorphous Si-C-N powder during sintering were investigated by X-ray diffractometry (XRD) and transmission electron microscopy (TEM). The defects at the fracture origins of the sintered bodies after bending tests also were investigated by scanning electron microscopy (SEM) and electron probe microanalysis (EPMA). XRD showed that alpha-Si₃N₄ was formed initially from the amorphous Si-C-N by 1530°C, which then transformed to ß-Si₃N₄ at 1600°C. Also, a slight formation of crystalline SiC occurred during the transformation from alpha- to ß-Si₃N₄, and it increased after the transformation was completed at 1900°C. TEM revealed that many SiC nanoparticles were incorporated into ß-Si₃N₄ grains after the transformation from alpha- to ß-Si₃N₄ at 1600°C. They were located at the triple points of the grain boundaries of ß-Si₃N₄ after continued Si₃N₄ grain growth at 1900°C. Besides the SiC nanoparticles, large agglomerations of carbon or SiC particles of 20-60 µm size were observed by SEM and EPMA at the fracture origins of the sintered bodies after the bending tests.     

Microstructure Tailoring for High Thermal Conductivity of β-Si3N4 Ceramics

β-Si₃N₄ ceramics sintered with Yb₂O₃ and ZrO₂ were fabricated by gas-pressure sintering at 1950°C for 16 h changing the ratio of "fine" and "coarse" high-purity β-Si₃N₄ raw powders, and their microstructures were quantitatively evaluated. It was found that the amount of large grains (greater than a few tens of micrometers) could be drastically reduced by mixing a small amount of "coarse" powder with a "fine" one, while maintaining high thermal conductivity (>140 W·(m·K)⁻¹). Thus, this work demonstrates that it is possible for β-Si₃N₄ ceramics to achieve high thermal conductivity and high strength simultaneously by optimizing the particle size distribution of raw powder.     

Microstructure and Properties of Self-Reinforced Silicon Nitride

Problems associated with manufacturing Si₃N₄/SiC-whisker composites have been overcome by developing selfreinforced Si₃N₄ with elongated β-Si₃N₄ grains formed in situ from oxynitride glass. This Si₃N₄–Y₂O₃–MgO–SiO₂–CaO-based material has a flexure strength >1000 MPa and fracture toughness >8 MPa·m^½. The optimum combination of mechanical properties has been obtained with Y₂O₃:MgO ratios ranging from 3:1 to 1:2, CaO contents ranging from 0.1 to 0.5 wt%, and Si₃N₄ contents between 90 and 96 wt%.