MoO3纳米线有序阵列在微流芯片中的Cd2+离子传感特性研究

采用水热合成技术生长MoO_3纳米线,利用介电泳技术在微电极上组装MoO_3纳米线阵列,研究了纳米线阵列对水中Cd~(2+)离子浓度的传感特性。结果表明,水热法所得纳米线为正交相MoO_3结构,长度可达20μm。在介电泳力作用下,纳米线可在微电极的间隙取向排列,构成沿水平方向平行排列的纳米线阵列。将所得纳米线阵列与微流控芯片相集成,可获得用于液体离子浓度探测的微型传感器件。器件在室温下,对水溶液中浓度为1～50μmol/L的Cd~(2+)离子表现出快速灵敏的线性响应特性。其中,当Cd~(2+)离子溶液浓度为50μmol/L时,传感器的电阻开关比约为4.8,响应时间约为114 s。随着Cd~(2+)离子浓度逐渐降低,传感器的电流开关比线性下降,响应时间逐渐缩短。根据傅里叶变换红外光谱结果,MoO_3纳米线阵列这种快速、灵敏的Cd~(2+)离子敏感特性主要来自水热反应后其表面携带的羟基官能团所致。     

基于自组装工艺的ZnO纳米线网络晶体管

本文提出了一种,制备均匀高密度ZnO纳米线网络的简单高效的自组装方法。在此方法中,ZnO纳米线经3-氨丙基三乙氧基硅烷修饰后,其表面出现带正电的氨基功能团。经亲水性处理后的SiO2层在水中带负电,从而凭借静电吸引作用,修饰后的ZnO纳米线吸附在SiO2/Si基底,形成纳米线网络。利用此纳米线网络制备得场效应晶体管。纳米线密度为2.8/μm2的晶体管,其电流开关比为2.4×105,跨导为336 nS, 场效应迁移率为27.4 cm2/V?s.     

氧化钨纳米阵列的制备与紫外光电探测研究

采用真空热蒸发法在硅片上实现了大面积、形貌均匀氧化钨纳米阵列的合成。X射线衍射(XRD)和透射电子显微镜(TEM)结果均表明,所合成的氧化钨为单斜结构的W18O49,纳米线的生长方向为(010)晶向。利用介电泳技术,在叉指电极上实现了氧化钨纳米线的准定向排列和电极接触。研究了氧化钨纳米线的紫外光探测性能,发现其对365 nm的紫外光具有良好的响应能力。在1 V偏压下,氧化钨纳米线的紫外光响应度为6.67 A/W,响应时间和恢复时间分别为0.17 s和0.15 s。研究结果表明,氧化钨纳米线在高性能光电探测器应用中展示良好前景。     

数值模拟毛细管通道中微粒的介电泳分离

基于直流介电泳技术,采用一种具有三维突扩、突缩截面的新型毛细管式微通道,对直径分别为8和12μm的聚苯乙烯微粒在通道中的分离进行数值模拟。分析了微粒受到的电渗力、电泳力和介电泳力对其运动轨迹的影响。数值模拟结果表明,聚苯乙烯微粒在突扩、突缩截面附近受到负介电泳力作用,运动轨迹不断向通道轴心偏移;电渗力和电泳力的作用方向相反,有效降低了微粒的运动速度,增加了介电泳力的作用时间。外加电压100 V时,可最有效地将直径为8μm微粒输运至出口内置套管外,而直径为12μm的微粒被出口内置套管接收,实现不同尺寸聚苯乙烯微粒的连续分离。     

基于介电泳力的单根纳米线组装仿真与实验研究

为将单根纳米线成功组装至微电极两端,在介电泳力的基础上附加考虑粘滞阻力及布朗力的影响,建立了单根纳米线受力及运动模型,通过数值仿真得到纳米线在三维空间中的运行轨迹,并基于可控介电泳工作区模型(DWS-DEP)获得了可实现准确跨接的初始点分布区。为选择合适的电极组装单根纳米线,对三种不同尖端弧度的电极稳态区进行仿真,结果显示圆弧状电极更易实现一维纳米结构的跨接组装。利用所设计的Ti/Au电极进行纳米线介电泳组装实验,得到了与仿真相一致的结果。     

日本研制成功硅纳米线定向耦合器

日本NEC公司和日本光电子工业与技术发展协会及东京大学的科学家们第一个成功研制出Si纳米线定向耦合器。该Si纳米线定向耦合器比传统的用玻璃光纤、基于半导体SiO2或铌酸锂波导制作的定向耦合器尺寸小得多。与传统定向耦合器的几个mm的长度相比较，Si纳米线定向耦合器的总长度≤50μm。由于Si芯与SiO2包层之问的折射率差很大（分别为3．5和1．5），Si纳米线波导的S形弯曲的曲率半径小得多，所以弯曲损耗小。此外，传统的定向耦合器的典型耦合长度为几百μm或甚至为几个mm，而Si纳米线定向耦合器的耦合长度≤10μm。     

日本研制成功硅纳米线定向耦合器

日本NEC公司和日本光电子工业与技术发展协会及东京大学的科学家们第一个成功研制出Si纳米线定向耦合器。该Si纳米线定向耦合器比传统的用玻璃光纤、基于半导体SiO2或铌酸锂波导制作的定向耦合器尺寸小得多。与传统定向耦合器的几个mm的长度相比较,Si纳米线定向耦合器的总长度≤50μm。由于Si芯与SiO2包层之间的折射率差很大,Si纳米线波导的S形弯曲的曲率半径小得多,所以弯曲损耗小。此外,传统的定向耦合器的典型耦合长度为几百μm或甚至为几个mm,而Si纳米线定向耦合器的耦合长度≤10μm。该Si纳米线定向耦合器采用一间隔为0.3μm的矩…     

碳纳米管薄膜的电泳沉积及其场发射性能研究

利用电泳沉积法在铝片上制备了碳纳米管薄膜冷阴极。通过扫描电镜、Raman光谱观察分析了表面形貌和结构,并对场发射性能进行了测试。经过研磨处理的碳纳米管薄膜样品,开启电场为2V／μm,当电场强度为4V／μm时电流密度达到2600μA／cm^2,发光点密度大于10^4／cm^2。     

一维纳米材料定向排布技术的研究进展

定向排列技术是一维纳米材料应用中的一项关键技术。论述了LB(Langmuir-Blodgett)膜法、介电泳法、接触印刷法和水流法几类定向排列方法及其特点。LB膜法利用材料的两亲特性,将一维纳米材料铺展在水面,压缩水面成膜区域,使材料取向排列;介电泳法借助材料在交变电场中的极化现象,使一维纳米材料沿着电极之间的电场线方向定向排列;接触印刷法利用材料和衬底表面的范德华力使一维纳米材料脱离施主衬底,定向排列到受主衬底上;水流法利用流体的冲刷作用或者液体的毛细效应,使一维纳米材料呈取向性排列。介绍了这些物理、化学和机械方法在一维纳米材料定向排布加工方面所具有的不同特色和适用条件。     

并五苯场效应管的电学特性

介绍了用高真空中热蒸发镀膜的方法制备并五苯薄膜场效应晶体管.作为场效应管半导体层的并五苯薄膜沉积在p型Si(100)(14.0～20.0 Ω·cm)衬底上.场效应管中并五苯薄膜厚度为70nm,源极、漏极和栅极(Au)的厚度均为50nm,绝缘层SiO2的厚度为300nm,沟道宽度为190μm,沟道长度为15μm.用AFM表征了并五苯薄膜表面形貌,并研究了薄膜生长速率对并五苯场效应晶体管电学特性的影响.在薄膜生长速率为0.24和1.36 nm/min时,场效应管的载流子迁移率分别为2.7×10-4和2.2×10-6 cm2/(V·s).     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.