Effect of the Interfacial $hbox{SiO}_{2}$ Layer in High-$k$ $ hbox{HfO}_{2}$ Gate Stacks on NBTI

A relative contribution of the interface and bulk dielectric defects to negative bias temperature instability (NBTI) in the metal/HfO₂/SiO₂ gate stacks was investigated. Interface trap generation was assessed by the direct-current current-voltage (DCIV) technique, which independently measures the interface defect density from bulk oxide charges and delineates the contribution of the interface defect generation to the overall NBTI measured by the threshold voltage shift (DeltaV_TH). The metal/high-fc induced traps in the interfacial SiO₂ layer were found to control the fast transient trap charging/generation processes, which affect the power-law exponents of DeltaV_TH and the stress-generated interface trap density DeltaD_IT stress time dependencies. Similar kinetics of the long-term DeltaV_TH(t) and DeltaD_IT(t) dependencies in the high-fe and SiO₂ gate stacks suggests that the degradation is governed by the same mechanism of trap charging/generation in the SiO₂ film. The investigation leads to a novel methodology for the time-to-failure (TTF) extrapolation, in which the measured DeltaV_TH and DeltaD_IT values are adjusted for the contributions from the fast transient defect charging/generation processes. It is shown that the conventional TTF analysis might greatly overestimate TTF. Post-NBTI stress recovery at zero relaxation voltage measured by the DCIV method showed that oxide charges and interface traps relax at the same rate indicating that the interface processes may dominate DeltaV_TH relaxation. At positive relaxation voltages, however, the oxide charge relaxation exhibits a fast transient component. Relaxation at positive bias also shows an as yet unexplained fast component in the interface trap recovery.     

Time-Dependent Dielectric Breakdown of 4H-SiC/$ hbox{SiO}_{2}$ MOS Capacitors

Time-dependent dielectric breakdown (TDDB) is one of the major issues concerning long-range reliability of dielectric layers in SiC-based high-power devices. Despite the extensive research on TDDB of $hbox{SiO}_{2}$ layers on Si, there is a lack of high-quality statistical TDDB data of $hbox{SiO}_{2}$ layers on SiC. This paper presents comprehensive TDDB data of 4H-SiC capacitors with a $ hbox{SiO}_{2}$ gate insulator collected over a wide range of electric fields and temperatures. The results show that at low fields, the electric field acceleration parameter is between 2.07 and 3.22 cm/MV. At fields higher than 8.5 MV/cm, the electric field acceleration parameter is about 4.6 cm/MV, indicating a different failure mechanism under high electric field stress. Thus, lifetime extrapolation must be based on failure data collected below 8.5 MV/cm. Temperature acceleration follows the Arrhenius model with activation energy of about 1 eV, similar to thick $hbox{SiO}_{2}$ layers on Si. Based on these experimental data, we propose an accurate model for lifetime assessment of 4H-SiC MOS devices considering electric field and temperature acceleration, area, and failure rate percentile scaling. It is also demonstrated that temperatures as high as 365 $^{circ}hbox{C}$ can be used to accelerate TDDB of SiC devices at the wafer level.      

Positive Bias Temperature Instability Effects in nMOSFETs With $hbox{HfO}_{2}/hbox{TiN}$ Gate Stacks

The Positive Bias Temperature Instability (PBTI) and the stress-induced leakage current (SILC) effects are thoroughly examined in nFETs with $hbox{SiO}_{2}/hbox{HfO}_{2}/hbox{TiN}$ dual-layer gate stacks under a wide range of bias and temperature stress conditions. Experimental evidence of the SILC increase with time is obtained suggesting the activation of a trap generation mechanism. Threshold voltage $(V_{rm T})$ instability is found to be the result of a complicated interplay of two separate mechanisms; filling of preexisting electron traps versus trap generation each one dominating at different stress condition regimes. Furthermore, $V_{rm T}$ instability relaxation experiments, undertaken at judiciously chosen conditions, show that the preexisting and stress-induced traps exhibit similar detrapping kinetics indicating that both types of traps may have similar characteristics. Finally, it is shown that the role of the SILC effect (and the associated trap generation component) on $V_{rm T}$ instability is process dependent and that SILC reduction is accompanied by enhancement of the PBTI device lifetime.      

Influence of Traps and Carriers on Reliability in HfSiON/ $hbox{SiO}_{2}$ Stacks

The influence of traps and current on the degradation in HfSiON has been studied. Different characteristics of activation energy for TDDB between thick and thin HfSiON, where the Poole Frenkel (PF) and tunnel currents mainly flow, respectively, were observed in the same temperature range. It was indicated that the current could promote the breakdown in HfSiON. Furthermore, we investigated the correlation between pre-existing traps and trap generation in HfSiON/$hbox{SiO}_{2}$ stacks with fluorine incorporation. It was found that the nature of generated traps correspond to that of pre-existing traps. From these results, it was considered that the interaction between traps and carriers causes the degradation in HfSiON.      

High-Power $hbox{Yb}^{{bm 3}{bm +}}$-Doped Phosphate Fiber Amplifier

We report on the development of novel high-power light sources utilizing a $hbox{Yb}^{3+}$-doped phosphate fiber as the gain element. This host presents several key benefits over silica, particularly much higher $hbox{Yb}_{2} hbox{O}_{3}$ concentrations (up to 26 wt%), a 50% weaker stimulated Brillouin scattering (SBS) gain cross section, and the absence of observable photodarkening even at high population inversion. These properties result in a greatly increased SBS threshold compared to silica fibers, and therefore, potentially much higher output powers out of either a multimode large mode area or a single-mode fiber, which means in the latter case a higher beam quality. To quantify these predictions, we show through numerical simulations that double-clad phosphate fibers should produce as much as $sim$700 W of single-frequency output power in a step index, single-mode core. As a step in this direction, we report a short phosphate fiber amplifier doped with 12 wt% $hbox{Yb}_{2} hbox{O}_{3}$ that emits 16 W of single-frequency single-mode output. We also describe a single-mode phosphate fiber laser with a maximum output power of 57 W. The laser slope efficiency is currently limited by the fairly high fiber loss ( $sim$3 dB/m). Measurements indicate that 77% of this loss originates from impurity absorption, and the rest from scattering.      

$hbox{CO}_{bf 2}$ Reforming of Aliphatic Hydrocarbons With Silent Discharge Plasma

CO₂ reforming of methane ( CH₄) and propane (C₃H₈) was performed with a silent discharge reactor (SDR). The reactor performance was evaluated in terms of energy efficiencies for the conversion of the substrates and formation of H₂ and CO. The reactivity of C₃H₈ was 2- to 3-fold higher than that of CH₄, and both of CH₄ and C₃H₈ were reformed in the order of 10¹⁶ molecules/J at 298 K. The energy efficiencies for the conversion of these substrates increased with their initial concentrations, but decreased with an increase in reactor energy density. On the other hand, the energy efficiencies for the conversion of CO₂, which were not affected by the hydrocarbon types, were lower than those for the hydrocarbon substrates. A positive temperature effect was observed in the conversion of the hydrocarbon substrates only at low reactor energy densities from 298 to 433 K.     

Complex-Valued State Matrices for Simple Representation of Large Autonomous Microgrids Supplied by $PQ$ and $Vf$ Generation

This paper focuses on representing the state space model of a microgrid in which power regulated (PQ ) and voltage/frequency regulated (Vf) generation units share a distribution system. The generation units considered in this paper are inverter interfaced. This introduces some interesting modeling problems which are treated in the paper, such as the decoupled cascaded control schemes or the non-negligible grid dynamics. A modeling approach is proposed based on four defined complex vectors. These vectors allow for complex-valued system matrices to be formed in a quite automated way. Moreover, a convenient partition of the system matrices is proposed, which in turn allows fast and easy modifications. Additionally, a multivariable methodology is proposed to simultaneously find the control system gains in an optimal sense. A 69-bus radial system, supplied by 20 generation units, is used to demonstrate how the proposal is of easy implementation to conduct small-signal stability analyses.     

Control of Freeway Traffic Flow in Unstable Phase by $H_{infty}$ Theory

This paper devises a freeway controller that is capable of stabilizing traffic flow when the traffic system is in the unstable (congested) phase, in which a shock wave is likely to occur in the presence of any inhomogeneity and where the system is on the verge of a jam condition. Two types of traffic controllers are developed through the use of either a speed command approach that can be implemented in an intelligent transportation system (ITS) or ramp metering that is a typical way of preventing a freeway from overloading. By means of the feedback linearization technique, the discretized macroscopic traffic flow model is reformulated, in which the desired change of volume in each section is treated as a virtual input. By exploring the casual relations among density, speed, and flow change, the corresponding speed commands can be determined. The traffic flow control problem is formulated as an H_infin control design problem so that uncertainties that are associated with the macroscopic model can be taken into account. Simulations show that the devised controller can effectively stabilize the traffic flow in the unstable phase. Design flexibilities associated with the method are also discussed.     

Composition Optimization and Phase Transformation of Si-Nanocrystal-Doped $hbox{SiO}_{x}$ for Enhancing Luminescence From MOSLED

Near-infrared (NIR) photo- and electroluminescence (PL and EL) of Si nanocrystals buried in Si-rich SiO_x, film, and their correlation with the structural phase transformation and the varied oxygen composition of SiO_x, are investigated. By detuning the N₂O flowing ratio (Y_{N 2 O} = [N₂O/(N₂O + SiH₄)] times 100%) from 93% to 80% during plasma-enhanced chemical vapor deposition growth, the oxygen composition ratio of the Si-rich SiO_x, can be adjusted from 1.64 to 0.88. The grazing incident X-ray diffraction and X-ray photoelectron spectroscopy spectra indicate that the SiO_x, transforms its structural phase from Si + SiO₂ isomer to Si + SiO + SiO₂ isomer. With O/Si ratio >1.24, the SiO_x, matrix becomes SiO₂ isomer, whereas the SiO_x, structure approaches SiO phase at O/Si ratio that is nearly 1.0. The formation of SiO matrix in SiO_x, grown at Y_{N 2 O} below 85% reduces the precipitated Si nanocrystal density from 2.8 times 10¹⁸ to 7 times 10¹⁶ cm^-3, and monotonically attenuates the NIR PL by one order of magnitude. Such a structural phase transformation from SiO₂ to SiO in SiO_x with lower O/Si ratio causes the degradation in EL power conversion efficiency and external quantum efficiency (EQE). Maximum EL power of 0.5 muW and EQE of 0.06% are obtained from MOSLED made on SiO_x, with optimized O/Si ratio of 1.24.     

$m-k$ Robust Observability in State Estimation

This paper provides a technique to determine the minimum required measurement set to ensure observability in state estimation even if any meters fail. The technique relies on solving a nonlinear integer programming problem. The proposed procedure is illustrated through a simple example and three case studies based on the IEEE Test Systems. Conclusions are finally drawn.     

Combined Nanoscale and Device-Level Degradation Analysis of $hbox{SiO}_{2}$ Layers of MOS Nonvolatile Memory Devices

In this paper, the impact of an electrical stress applied on MOS structures with a 9.8-nm-thick $hbox{SiO}_{2}$ layer has been investigated at the device level and at the nanoscale with conductive atomic force microscopy (AFM). The goal is to correlate both kinds of measurements when studying the degradation and breakdown (BD) of tunnel oxides of nonvolatile memory devices. In particular, the generation of defects and its impact on leakage current and charge trapping in the tunnel oxide have been analyzed through spectroscopic measurements and current images. The properties and energy of the stress-induced defects (before and after BD) have been roughly estimated by thermally stimulated luminescence and AFM measurements.      

Highly Stable 1.3-$muhbox{m}$ -Wavelength Lasers With p- and n-InP Buried Heterostructure

Highly stable 1.3-$muhbox{m}$-wavelength Fabry–Perot lasers with a p- and n-type InP buried heterostructure have been achieved at an ambient temperature of 85 $^{circ}hbox{C}$. The $t^{0.5}$ deterioration (second-stage degradation) property does not appear clearly within 6000 h, and the saturated first-stage degradation property remains. It is confirmed that the fabricated 1.3-$muhbox{m}$ FP lasers have a different optical-beam-induced-current characteristic from lasers suffering from $t^{0.5}$ deterioration. The first-stage degradation is due to the deterioration of the active layer and is attributed to the fact that some nonradiative recombination centers are generated in the active layer.      

$hbox{NO}_{rm x}$ Aftertreatment Using Thermal Desorption and Nitrogen Nonthermal Plasma Reduction

In this paper, the results of two experiments are reported. First, the performances of various types of nonthermal plasma reactors for $hbox{NO}_{rm x}$ reduction were compared. It was shown that the surface-discharge reactors have as high $ hbox{NO}_{rm x}$ reduction capabilities as pulse-powered wire–cylinder reactors. Second, $hbox{NO}_{rm x}$ treatment using the surface-discharge reactor with a NO-adsorbent zeolite 13X was performed. Thermal desorption was employed for the regeneration of the zeolite. The $hbox{NO}_{rm x}$ of 350 ppm was kept lower than 18 ppm for at least 11 h, whereas it degraded to 75 ppm in the absence of the regeneration. The result suggested the possibility of an aftertreatment system that employed thermal desorption by utilizing the waste heat of diesel engine exhaust and $hbox{NO}_{rm x}$ reduction by using a surface-discharge reactor.      

$1/f$ Noise in Drain and Gate Current of MOSFETs With High-$k$ Gate Stacks

In this paper, we investigate the quality of MOSFET gate stacks where high- $k$ materials are implemented as gate dielectrics. We evaluate both drain- and gate-current noises in order to obtain information about the defect content of the gate stack. We analyze how the overall quality of the gate stack depends on the kind of high-$k$ material, on the interfacial layer thickness, on the kind of gate electrode material, on the strain engineering, and on the substrate type. This comprehensive study allows us to understand which issues need to be addressed in order to achieve improved quality of the gate stack from a $1/f$ noise point of view.      

Injection and Avalanche Electroluminescence of $hbox{Al}_{hbox{0.1}} hbox{Ga}_{hbox{0.9}} hbox{N/Al}_{hbox{0.15}} hbox{Ga}_{hbox{0.85}} hbox{N}$ Multiple Quantum Wells

Three periods of Al_0.1Ga_0.9N/Al_0.15Ga_0.85 N multiple quantum wells (MQWs) were used as the active region of a p-i-n diode fabricated on 6H-SiC substrate. Electroluminescence (EL) of these MQWs has been investigated in both injection and avalanche modes. Band-to-band luminescence of the Al_0.1Ga_0.9N wells was found to peak at 364 nm in the injection mode and in the range of 364-372 nm in the avalanche mode. The most striking phenomenon is that band-to-band EL of the Al_0.15Ga_0.85N barriers has also been observed in the injection mode, while it is not seen in the avalanche mode. This is explained by considering different sources of carriers and different carrier transportation mechanisms in the two modes. The luminescence intensity I _EL has a power-law dependence on the current I by I _EL prop I ² in the injection mode and by I _EL prop I ⁴ in the avalanche mode.     

Yb$^{{bm 3+}}$ Ring Doping in High-Order-Mode Fiber for High-Power 977-nm Lasers and Amplifiers

We numerically model the performance of high-power 977-nm fiber lasers and amplifiers pumped at 915 nm, in which the Yb is doped in a ring inside the core of a high-order-mode (HOM) fiber. Light in the spatially coherent ${rm LP}_{{07}}$ mode is amplified in the fiber, and then coupled to the ${rm LP}_{{01}}$ mode by long-period gratings. For the laser, it is found that parasitic oscillation on the 1023-nm four-level transition is much less likely when the ring position coincides with a low-intensity point in the ${rm LP}_{{07}}$ mode pattern. For the amplifier, the maximum extractable energy is found to increase as the pump power is increased up to around 20 W, and then it becomes limited by amplified spontaneous emission to a few millijoules. This limit is not related to the use of HOM fiber, apart from the required fiber numerical aperture, and is independent of the core radius, Yb concentration, and doping profile. The HOM fiber does have the advantage of increasing the efficiency of energy extraction in the amplifier, when the doped ring position coincides with a maximum in the HOM intensity pattern.      

PPMgLN-Based High-Power Optical Parametric Oscillator Pumped by Yb $^{{bm 3}{bm +}}$-Doped Fiber Amplifier Incorporates Active Pulse Shaping

We report a periodically poled magnesium-oxide-doped lithium niobate (PPMgLN) based optical parametric oscillator (OPO) pumped by a diode-seeded, linearly polarized, high-power, pulsed, ytterbium fiber master oscillator power amplifier (MOPA). Using adaptive pulse shaping of the seed laser (using an external modulator), we demonstrate a reduction in the impact of dynamic gain saturation and optical Kerr/Raman nonlinearities within the fiber MOPA, obtaining shaped signal and idler pulses at the OPO output and reduced spectral bandwidths. A maximum average output power of 26.5 W was obtained from the MOPA at 1062 nm. An output power as high as 11 W from the OPO at an overall slope efficiency of 67% was achieved, with 2.7 W of output power obtained at a wavelength of 3.5 mum. Our experiments were pump-power-limited and considerable scope remains for further power scaling of such OPOs using this approach.     

PM and $hbox{NO}_{rm x}$ Removal for Diesel Engine Emission Using Ozonizer and Chemical Hybrid Reactor

Over the years, we have investigated particulate matter (PM) and $ hbox{NO}_{rm x}$ reduction using nonthermal plasma-chemical hybrid processes without using catalysts. Among nonthermal plasma hybrid processes, the ozonizer combined with the chemical hybrid reactor was investigated using a 479 cc (5.5 kW) power generation diesel engine. The PM deposited on the diesel particulate filter can be incinerated by ozone and $hbox{NO}_{2}$ in a wide range of flue gas temperature. The NO was oxidized to form $hbox{NO}_{2}$ by ozone, and $hbox{NO}_{2}$ was reduced by the 3% $hbox{Na}_{2}hbox{SO}_{3}$ chemical reactor. As the results, PM deposited on both metal and ceramic filters were successfully removed even at ambient temperature. The rate of PM incineration depends on the amount of ozone injected and was significantly higher than the rate of PM generation. Using 2.4% ozone concentration with a flow rate of 10 L/min, 82% of NO having 720 L/min was oxidized to $hbox{NO}_{2}$, and 78% of $ hbox{NO}_{rm x}$ was removed as a chemical scrubber. However, $ hbox{NO}_{rm x}$ removal was deteriorated about 10% after 1-h operation. This was attributed to $hbox{Na}_{2}hbox{SO}_{3}$ oxidation by air, which was evidenced by the reduction of pH in the chemical reactor.      

Temperature Effects on Breakdown Characteristics of High- $kappa$ Gate Dielectrics With Metal Gates

In this paper, the temperature dependence of time-dependent dielectric breakdown (BD) and stress-induced leakage current (SILC) of high-$kappa$ and interfacial layers (ILs) are studied separately and in a gate stack with metal gates as the BD mechanisms of these layers are different at higher temperatures than at room temperature. As observed from the low voltage SILC, the IL initiates the gate stack BD process at elevated temperature, which is followed by the high-$kappa$ layer. Activation energy extracted from Weibulll distribution of time-to-BD $(T_{rm BD})$ data from high- $kappa$ layer further suggests that the gate stack BD occurs when high- $kappa$ layer ultimately breaks down.