超宽带室内多径信道成簇特性仿真与分析

超宽带（UWB）无线信道的成簇特性是UWB信号在室内多径信道中的重要传播特性。在对UWB室内多径信道成簇特性进行分析的基础上，介绍了UWB信道的成簇模型，对UWB信号的基本特征和成簇现象形成的原因及其影响进行分析；采用布朗桥方法对有金属网格玻璃门反射的走廊环境中UWB多径信道的成簇特性进行仿真和分析；将具有成簇现象的UWB信号功率时延谱仿真结果与已公布的测量数据结果进行了比较和验证。为UWB无线信道及其信号传播特性的研究打下较好的基础，具有重要参考价值。     

伪波束法研究超宽带室内信道的功率分布

针对超宽带(UWB)信号的传输特点,以及超宽带信道与窄带信道间的区别,基于传播环境的几何描述,使用伪波束法建立了UWB多径信道有约束的布朗桥模型(BBBM)。根据UWB室内多径信道接收功率的遍历性假设,利用得到的多径信道模型计算室内UWB通信系统的功率分布。对三个典型环境下不同路径的UWB室内信号功率分布进行了仿真分析,计算结果与理论分析一致,表明基于伪波束法的UWB室内信道BBBM模型是正确的,使用BBBM模型可以分析UWB通信系统在室内环境的功率覆盖。     

SBR/Image时域射线跟踪法对UWB信号的仿真

超宽带（UWB）通信系统因为其良好的抗多径性,及比较高的传输速率引起越来越多的科研人员的研究兴趣。射线跟踪是一种被广泛应用于移动通信和个人通信环境中预测无线电波传播特性的技术,它同样适用于研究室内UWB无线信道的特征,能够提供精确度较高的预测结果。本文采用SBR/Image这种射线跟踪技术对UWB信号的传播特性进行了研究,利用MATLAB语言实现了上述算法,并结合相关文献对特定的室内视距环境进行仿真及数据分析,计算结果与文献结果吻合良好,表明本文方法是正确有效的。     

UWB信号波形传播特性研究

研究超宽带（UWB，ultra-wideband）的传播特性，是UWB信道理论研究的核心内容。利用Fourier变换对各种超宽带（UWB）脉冲波形的室内反射、透射和绕射进行了研究，并提出了一种新的n阶修正Bessel函数的渐近公式，仿真结果和时域的精确结果对比，一致性吻合较好。     

随机波束研究超宽带室内多径信道特性

从随机桥过程出发引入随机波束概念,使用随机波束研究超宽带（UWB）室内多径信道的传播特性.将UWB信号多径传播轨迹视作随机过程的样本,得到建模多径信道传播特性的随机波束.使用随机波束构建UWB信道的多径传播模型,并给出使用随机波束方法分析UWB室内多径信道特性的算法.使用该信道模型对实际传播环境进行仿真分析,并与其它建模UWB多径信道的方法进行了比较.仿真得到的UWB信道的功率延迟分布特性与实验测量的结果非常一致,证明此方法的有效性.     

TH-BPPM UWB系统在Nakagami-m衰落信道下的性能研究

跳时双正交脉冲位置调制（TH-BPPM）在超宽带（UWB）衰落信道的通信系统性能研究是基于超宽带室内无线信道进行研究的。频率选择性衰落是多径环境需要重点考虑的因素之一,在单用户情况下经常采用高斯近似法。利用等效瞬时信噪比和在AWGN信道下的误码率公式推导得出错误概率公式,并由Matlab仿真得到结论。     

基于SBR/IM的超宽带信号室内传播特性仿真和分析

基于入射及反弹射线法/镜像法对室内环境的超宽带信号传播进行了仿真和分析,仿真结果与测量结果的一致性良好,这验证了该方法的正确性.同时比较分析了仿真中得到的视距传播（LOS）和非视距传播（NLOS）的多径传播、接收波形、时延扩展和到达方向角分布等传播参数,仿真结果表明：（1）三次反射以上的射线对接收功率影响很小；（2）发射、接收天线极化方式一般可选择垂直极化；（3）超宽带（UWB）信号经历频率选择性衰落；（4）到达角分布近似于均匀分布.这些分析结果为超宽带通信系统室内覆盖提供了依据.     

基于UWB的无线定位技术

为了实现高精度定位的需求,对无线通信的超宽带定位技术进行了研究.根据美国联邦通信委员会（FCC）的研究,分析了无线定位技术的研究现状,并介绍了超宽带信号的定义和常用的无线定位技术.最后结合对几种无线定位技术的分析,给出了适合超宽带网络的定位技术.分析结果表明,基于UWB的定位技术比传统的定位技术的定位精度高.     

三维分布UWB设备对窄带无线系统干扰分析

针对超宽带(UWB)设备对其他相对窄带无线设备终端存在干扰的可能问题,通过建立的三维积分模型对无线系统终端受室内三维空间分布的多UWB设备合成干扰效果进行了分析。所提出的UWB干扰模型可以有效分析三维分布的多UWB设备对其他相对窄带无线系统的干扰,给出受干扰设备抗UWB干扰能力及UWB发射功率控制模板干扰保护强度等方面的数值评估,可作为现代化办公楼UWB设备布置及UWB功率控制研究方面的参考。     

UWB超宽带技术发展展望

超宽带（UWB）技术始于20世纪60年代兴起的脉冲通信技术，利用频谱极宽的超短脉冲进行通信，又称为基带通信、无载波通信，主要用于军用雷达、定位和通信系统中。2002年2月，美国联邦通信委员会（FCC）批准了UWB技术用于民用；随后，日本于2006年8月开放了超宽带频段。由于UWB技术具有传输速率高（达1Gbit／s）、抗多径能力强、功耗低、成本低、穿透能力强、低截获概率、与现有其他无线通信系统共享频谱等特点，现在已经成为无线个人域网（WPAN）的首选技术。[第一段]     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.