Structural and optical properties of Al-doped SnO2 nanowires

We report a facile thermal evaporation method for the syntheses of Al-doped SnO₂ nanowires using Al-doped SnO₂ nanoparticles as precursors. High-density, single-crystalline Al-doped SnO₂ nanowires were directly grown on the 6H-SiC substrates without any catalyst. X-ray diffraction patterns show that the Al dopants are incorporated into the rutile SnO₂ nanowires. The X-ray photoelectron spectra confirm the SnO₂ nanowires doped with 5 at.% Al. The photoluminescence spectra of the Al-doped SnO₂ nanowires exhibit that the large blue shift of the emission band can be observed in the Al-doped SnO₂ nanowires compared with undoped nanowires. The distortion of the crystal lattices caused by incorporation of Al atoms at the interstitials should be responsible for the large blue shift of the emission band.     

Inducing imperfections in germanium nanowires

Nanowires with inhomogeneous heterostructures such as polytypes and periodic twin boundaries are interesting due to their potential use as components for optical,electrical,and thermophysical applications.Additionally,the incorporation of metal impurities in semiconductor nanowires could substantially alter their electronic and optical properties.In this highlight article,we review our recent progress and understanding in the deliberate induction of imperfections,in terms of both twin boundaries and additional impurities in germanium nanowires for new/enhanced functionalities.The role of catalysts and catalyst-nanowire interfaces for the growth of engineered nanowires via a three-phase paradigm is explored.Three-phase bottom-up growth is a feasible way to incorporate and engineer imperfections such as crystal defects and impurities in semiconductor nanowires via catalyst and/or interfacial manipulation."Epitaxial defect transfer"process and catalyst-nanowire interfacial engineering are employed to induce twin defects parallel and perpendicular to the nanowire growth axis.By inducing and manipulating twin boundaries in the metal catalysts,twin formation and density are controlled in Ge nanowires.The formation of Ge polytypes is also observed in nanowires for the growth of highly dense lateral twin boundaries.Additionally,metal impurity in the form of Sn is injected and engineered via third-party metal catalysts resulting in above-equilibrium incorporation of Sn adatoms in Ge nanowires.Sn impurities are precipitated into Ge bi-layers during Ge nanowire growth,where the impurity Sn atoms become trapped with the deposition of successive layers,thus giving an extraordinary Sn content (＞6 at.％) in Ge nanowires.A larger amount of Sn impingement (＞9 at.％) is further encouraged by utilizing the eutectic solubility of Sn in Ge along with impurity trapping.     

Generation of planar defects caused by the surface diffusion of Au atoms on SiNWs

The generation of planar defects in silicon nanowires (SiNWs) synthesized by means of a vapor–liquid–solid (VLS) procedure using Au as a catalyst in an ultra-high vacuum chemical vapor deposition (UHV-CVD) system was investigated. Faceting, the formation of planar defects and the diffusion of Au in SiNWs occurred simultaneously, proportional to the growth temperature and the ratio of the H₂ precursor gas. The planes located on the sidewalls of the wire after Au diffusion were faceted (1 1 1) and (1 0 0) surfaces, which represent equilibrium configurations of Si due to surface energy minimization during rapid wire growth under unstable conditions. Moreover, {1 1 1} twin defects were formed on the sidewalls of the faceted boundaries where the Au clusters were mainly located, due to the surface tension of the Au atoms, resulting in clusters at the liquid/solid interfaces in SiNWs with a 〈1 1 1〉 growth direction.     

Photoluminescence of CdSe nanowires grown with and without metal catalyst

We present temperature and power dependent photoluminescence measurements on CdSe nanowires synthesized via vapor-phase with and without the use of a metal catalyst. Nanowires produced without a catalyst can be optimized to yield higher quantum efficiency, and narrower and spatially uniform emission, when compared to the catalyst-assisted ones. Emission at energies lower than the band-edge is also found in both cases. By combining spatially-resolved photoluminescence and electron microscopy on the same nanowires, we show that catalyst-free nanowires exhibit a low-energy peak with sharp phonon replica, whereas for catalyst-assisted nanowires low-energy emission is linked to the presence of nanostructures with extended morphological defects.      

Catalyst-free synthesis and shape control of CdTe nanowires

The procedure reported here allows for the size and shape control of CdTe nanowires by means of colloidal chemistry. Thus, ultrathin, straight, saw-tooth-like and one-sided branched nanowires with zinc blende structures could be synthesized. Their formation does not require any catalyst and is most likely due to the oriented attachment of nanoparticles formed in the beginning of the reaction. The use of oleylamine as a solvent turned out to be crucial in order to achieve CdTe nanowires. The reaction between oleic acid and oleylamine in the presence of CdO proved to be essential, not only to activate the Cd precursor but also to provide reaction conditions facilitating nanowire formation by oriented attachment.      

High quality GaAs nanowires grown on glass substrates

We report for the first time the growth of GaAs nanowires directly on low-cost glass substrates using atmospheric pressure metal organic vapor phase epitaxy via a vapor-liquid-solid mechanism with gold as catalyst. Substrates used in this work were of float glass type typically seen in household window glasses. Growth of GaAs nanowires on glass were investigated for growth temperatures between 410 and 580 °C. Perfectly cylindrical nontapered nanowires with a growth rate of ~33 nm/s were observed at growth temperatures of 450 and 470 °C, whereas highly tapered pillar-like wires were observed at 580 °C. Nanowires grew horizontally on the glass surface at 410 °C with a tendency to grow in vertically from the substrate as the growth temperature was increased. X-ray diffraction and transmission electron microscopy revealed that the nanowires have a perfect zinc blende structure with no planar structural defects or stacking faults. Strong photoluminescence emission was observed both at low temperature and room temperature indicating a high optical quality of GaAs nanowires. Growth comparison on impurity free fused silica substrate suggests unintentional doping of the nanowires from the glass substrate.     

Structure and elemental distribution of (Ga,Mn)N nanowires

(Ga,Mn)N nanowires were grown by plasma-assisted molecular beam epitaxy on p-type Si(111) substrates. Chemical composition and elemental distribution of single nanowires were analyzed by energy dispersive X-ray spectroscopy revealing an inhomogeneous Mn distribution decreasing from the surface of the nanowires toward the inner core region. The average Mn concentration within the nanowires is found to be below 1%. High-resolution transmission electron microscopy shows the presence of planar defects perpendicular to the growth direction in undoped and Mn-doped GaN nanowires. The density of planar defects dramatically increases under Mn supply.     

Redox reaction-assisted growth of ZnO nanowires on SnO2 thin films

ZnO nanowires were grown onto SnO₂ film coated on Si substrate using a vapor transport method. Zn vapor was found to play important roles in reducing SnO₂ and in being oxidized as a ZnO layer. The growth mechanism of ZnO nanowires was revealed to be a two-step process of Zn-SnO₂ redox reaction and Sn catalyzed V-L-S (vapor-liquid-solid) growth; initially, Zn vapor atoms arriving at the SnO₂ surface reduce the SnO₂ to Sn and O atoms and diffuse into the SnO₂ layer to form a ZnO layer. The reduced Sn atoms diffuse out of the SnO₂ layer and are agglomerated to form Sn liquid droplets. Then, the Sn droplets on the surface of ZnO layer serve as a catalyst for the catalytic V-L-S growth of ZnO nanowires.     

Direct measurement of individual deep traps in single silicon nanowires

The potential of the metal nanocatalyst to contaminate vapor-liquid-solid (VLS) grown semiconductor nanowires has been a long-standing concern, since the most common catalyst material, Au, is known to induce deep gap states in several semiconductors. Here we use Kelvin probe force microscopy to image individual deep acceptor type trapping centers in single undoped Si nanowires grown with an Au catalyst. The switching between occupied and empty trap states is reversibly controlled by the back-gate potential in a nanowire transistor. The trap energy level, i.e., E(C) - E(T) = 0.65 ± 0.1 eV was extracted and the concentration was estimated to be ～2 × 10(16) cm(-3). The energy and concentration are consistent with traps resulting from the unintentional incorporation of Au atoms during the VLS growth.     

In2O3 nanowires for gas sensors: morphology and sensing characterisation

Thin and densely packed In₂O₃ nanowires have been synthesised on alumina substrates via transport and condensation method, starting from nanoparticles of indium or palladium as catalysts for the condensation process. Indium catalyst promoted wires growth according to vapour-solid (VS) mechanism, while palladium catalyst leads to wires formation based on vapour-liquid-solid (VLS) condensation. Electron microscopy and related diffraction analysis demonstrated that the wires are monocrystalline, with atomically sharp termination of the lateral sides, and are free from extended defects. The sensing properties of nanowires bundles have been tested to acetone using the flow through technique in the temperature range between 100 and 500 °C.     

Formation and segregation energies of B and P doped and BP codoped silicon nanowires

An ab initio study of the formation and segregation energies of B and P doped and BP codoped silicon nanowires oriented along the [110] direction is performed for fully relaxed H-passivated wires with a diameter of 1.2 and 1.6 nm. We found that the B and P dopants will migrate to the edge of the wire and that the formation energy for codoping is smaller than that for the single doped cases. In ultrathin wires it is possible to have a larger number of dangling bonds than dopant atoms per unit length; the effect of these defects on the formation and segregation energy is substantial. We found that P dopants are more easier trapped, and thus become electronically inactive, than B dopants.     

Plasmabromierung von graphitischen Materialien

Plasma bromination of graphitic materials The high‐yield and high‐selective plasma chemical bromination of polyolefin surfaces was transferred to graphitic materials. Graphene‐like surfaces of highly‐oriented pyrolytic graphite (HOPG), natural graphite, multi‐walled carbon nanotubes(MWCNT) and carbon fibres were exposed to bromine plasma. This bromination proceeds at polyolefin surfaces as radical substitution by hydrogen abstraction and bromine attachment or as nucleophilic substitution. However, bromination of graphitic structures picks up sp³ carbon atoms occurring as structural defects or more probably proceeds as electrophilic addition onto the substituted aromatic double bonds. In this process the planar sp² carbon‐carbon bonds are transferred to the tetrahedral sp³ C‐C bonds with non‐conducting structure. Using the bromine plasma maximal bromination yields varied, were dependent on the type of carbon material and ranged from 10–50% Br/C. Using bromoform as Br‐precursor and accepting layer deposition about 70% Br/C were found. Subsequently, different amines were grafted wet‐ or gas phase chemically by nucleophilic substitution. The grafting yields amounted 1–10 molecules per 100 carbon atoms, which was lower than for grafting yields on brominated polyolefin surfaces ranging between 1–22 molecules per 100 carbon atoms. After grafting more or less all non‐grafted Br‐atoms were also diminished, that indicated a partial reconstruction of the planar sp² graphitic structure.     

Formation of Single Tiers of Bridging Silicon Nanowires for Transistor Applications Using Vapor–Liquid–Solid Growth from Short Silicon‐on‐Insulator Sidewalls

Single tiers of silicon nanowires that bridge the gap between the short sidewalls of silicon‐on‐insulator (SOI) source/drain pads are formed. The formation of a single tier of bridging nanowires is enabled by the attachment of a single tier of Au catalyst nanoparticles to short SOI sidewalls and the subsequent growth of epitaxial nanowires via the vapor–liquid–solid (VLS) process. The growth of unobstructed nanowire material occurs due to the attachment of catalyst nanoparticles on silicon surfaces and the removal of catalyst nanoparticles from the SOI‐buried oxide (BOX). Three‐terminal current–voltage measurements of the structure using the substrate as a planar backgate after VLS nanowire growth reveal transistor behaviour characteristics.     

Characterization of synthetic diamonds by EPR and X-ray diffraction techniques

Electron paramagnetic resonance (EPR) spectroscopy and X-ray diffraction (XRD) studies were carried out on synthetic diamonds prepared using nickel, invar and monel as the catalyst solvents at high temperature and high pressure. Nitrogen and nickel were found to be the main impurities present in these specimens. -Quartz and copper phases were also observed in some cases. The width of EPR hyperfine lines of nitrogen atoms was found to depend on the catalyst solvents used in the synthesis. These studies show that EPR and XRD techniques yield complementary results about the defects/impurities present in synthetic diamonds.     

Si nanowires synthesized with Cu catalyst

The metal copper which is a newly developed interconnecting material for integrated circuit (IC) has been used as the catalyst to catalyze the formation of the Si nanowires in high temperature tube furnace. The growth direction of the straight Si nanowires is <111> and the polyhedron η″-Cu₃Si alloy is on the tip of the Si nanowires. The synthesis temperature of the Si nanowires is 500 °C. Such a low temperature implies that the vapor-solid (VS) should be the growth method. The cheap Cu catalyst is favorable for the mass synthesis of Si nanowires.     

Room temperature hydrogen detection using 1-D nanostructured tin oxide sensor

Room temperature sensing of hydrogen using randomly oriented tin oxide nanowires has been demonstrated successfully. The role of surface functionalization of nanowires with platinum catalyst in rapid hydrogen detection is also studied. These nanowires were successfully incorporated into a micro-electro-mechanical (MEMS) device. The device can successfully detect hydrogen gas (as low as 500 ppm) with response time as low as 10 sec. Effect of aspect ratio of the nanowires on diffusion of hydrogen molecules in the tin oxide nanowires is elucidated in detail.     

Heat conductance is strongly anisotropic for pristine silicon nanowires

We compute atomistically the heat conductance for ultrathin pristine silicon nanowires (SiNWs) with diameters ranging from 1 to 5 nm. The room temperature thermal conductance is found to be highly anisotropic: wires oriented along the <110> direction have 50-75% larger conductance than wires oriented along the <100> and <111> directions. We show that the anisotropies can be qualitatively understood and reproduced from the bulk phonon band structure. Ab initio density functional theory (DFT) is used to study the thinnest wires, but becomes computationally prohibitive for larger diameters, where we instead use the Tersoff empirical potential model (TEP). For the smallest wires, the thermal conductances obtained from DFT and TEP calculations agree within 10%. The presented results could be relevant for future phonon-engineering of nanowire devices.     

反应源温度对ZnO纳米线阵列定向性及发光性能的影响

以Au薄膜为催化剂、ZnO与碳混合粉末为反应源,采用碳热还原法在单晶Si衬底上制备了ZnO纳米线阵列.通过扫描电子显微镜( SEM)、X射线衍射仪(XRD)、荧光分光光度计对样品的表征,研究了反应源温度对ZnO纳米线阵列的定向性和光致发光性能的影响.样品在源温度920℃条件下沿(002)方向择优生长,定向性最好,温度过低不利于ZnO纳米线阵列密集生长,而温度过高导致Zn原子二次蒸发,因而也不利于纳米线阵列的定向和择优生长;样品在源温度880℃有最强的近紫外带边发射,表明温度过高和过低都不利于ZnO晶体结构的优化;由于ZnO纳米线在缺氧氛围下生长,氧空位是缺陷存在的主要形式,因此所有样品都有较强的绿光发射.温度升高导致纳米线生长速度提高而增加了氧空位缺陷数量,从而使样品绿峰强度增强并在源温度920℃时达最大值,但温度的进一步升高可导致ZnO纳米线表面Zn元素的蒸发而降低氧空位缺陷的数量,从而抑制绿峰强度.     

Synthesis of highly oriented iron sulfide nanowires through solvothermal process

Large-scale productions of highly oriented FeS_2−x (x=0.09) nanowires have been achieved by a simple low-cost, low-temperature solvothermal process. The X-ray diffraction (XRD) pattern revealed that the nanowires crystallized with cubic pyrite phase. Scanning electron microscopic (SEM) observation showed bundles of oriented nanowires with very high aspect ratio. Transmission electron microscopic (TEM) observation showed the nanowires to be smooth and uniform throughout their length. High-resolution transmission electron microscopy (HRTEM) and electron diffraction pattern revealed the single-crystalline nature of the nanowires.     

Effect of Oxide Assisted Metal Nanoparticles on Microstructure and Morphology of Gallium oxide Nanowires

Several researches have been reported about the characteristic of β-Ga2O3 nanowires which was synthesized on nickel oxide particle. But indeed, recent researches about synthesis of β-Ga2O3 nanowires on oxide-assisted transition metal are limited to nickel or cobalt oxide catalyst. In this work, Gallium oxide (β-Ga2O3 ) nanowires were synthesized by a simple thermal evaporation method from gallium powder in the range of 700 - 1000℃ using the iron, nickel, copper, cobalt and zinc oxide as a catalyst, respectively. The β-Ga2O3 nanowires with single crystalline without defects were successfully synthesized at the reaction temperature of 850, 900 and 950℃ in all the catalysts. But optimum experimental condition in synthesis of nanowires varied with the kind of catalyst. As increasing synthesis temperature,the morphology of gallium oxide nanowires changed from nanowires to nanorods, and its diameter increased. From these results, we could be proposed that the growth mechanism of β-Ga2O3 nanowires was changed with synthesis temperature of nanowires. Microstructure and morphology of Synthesized nanowire was characterized by HR-TEM, FE-SEM, EDX and XRD.