一种毫米波宽锁定范围的注入锁定倍频器设计

为提高毫米波段倍频器在低功耗下的工作带宽,采用IHP130 nm SiGe BiCMOS 工艺,设计了一种采用双端注入技术的毫米波宽锁定范围注入(DEI)锁定倍频器。该注入锁定倍频器主要由谐波发生器和带有尾电流源的振荡器构成,由巴伦产生差分信号双端注入振荡器的形式提高三次谐波注入强度,使其在E、W 等波段输出宽锁定范围和良好相位噪声性能的三倍频信号。仿真结果表明,注入锁定倍频器在工作电压为1.2 V,输入信号功率为0 dBm时,其锁定范围在57~105 GHz 内。在相同工作电压和输入信号功率下,输入频率为32 GHz 时,一次、二次和四次谐波抑制大于20 dBc,功耗为9.1 mW。     

小型化十二倍频器研究

研制360 MHz 12倍频器.采用3、4次倍频级联方法,使倍频器在3～5 dBm 信号输入情况下,输出功率大于6 dBm ,功率波动小于2 dB,谐波抑制度大于50 dB.介绍了倍频器的设计思路、调试方法和测试结果等.     

微波倍频器的设计与研制

针对微波倍频器的实现途径,介绍了阶跃管倍频和三极管倍频的原理,其中三端非线性电阻微波倍频器可实现有增益倍频,且倍频效率高,稳定性好,在现代通信系统中有着广泛的应用前景。应用ADS软件对倍频电路进行优化仿真,利用集总参数电容和电感对阻抗进行匹配,设计利用晶体三极管通过两次4倍频实现了L波段16倍频,最终成功研制出性能优良的L波段16倍频器,输出功率10.67 dBm,杂波抑制>75 dB,谐波抑制>60 dB,电流仅为120 mA,频谱纯净度较好,温度稳定性较高,能够有效实现倍频功能,满足微波频率源系统的使用要求。     

基于0.13 μm SiGe工艺的48~68 GHz四倍频器

采用0.13 μm SiGe BiCMOS工艺,设计并实现了一种应用于高速光通信的全集成注入锁定四倍频器芯片。该设计包括单端转差分放大器、注入锁定二倍频器(ILFD)以及分频器(Divider-by-2)。测试结果表明,该四倍频器的输出锁定范围达到了48~68 GHz,输出锁定在65 GHz时的谐波抑制比为36 dBc。芯片核心面积为0.36 mm²,在3.3 V供电电压下,核心功耗为247 mW。该设计可以满足下一代超高速光电互联芯片对高速时钟的应用需求。     

太赫兹行波管级联倍频器

太赫兹行波管(TWT)级联倍频器基于行波管非线性互作用后电子注中的谐波电流,利用行波管和级联谐波系统组成的倍频器获得电磁波倍频放大。以 W 波段行波管二倍频器为例,对器件的正确性和可行性进行验证。利用微波管模拟器套装(MTSS)软件对设计的倍频器进行三维非线性互作用模拟,结果显示,级联了二次谐波系统的 W 波段行波管倍频器与其他工作在140 GHz~220 GHz 波段的小型太赫兹辐射源相比较,具有优越的性能：谐波输出功率在8 GHz 范围内大于2 W,转换增益大于37 dB。利用 CST公司的粒子工作室软件进行三维粒子注波互作用模拟,结果显示,太赫兹行波管级联倍频器作为潜在的太赫兹源具有高功率、宽频带和高实用化的特点。     

3 mm二倍频器的设计与实现

设计了一种W波段二倍频器,输入为46～48 GHz,输出为92～96 GHz,用来为毫米波接收前端系统提供3 mm本振信号.二倍频器采用微带线制作,且输入和输出端口位于腔体轴向两侧,选择对脊鳍线过渡来完成波导-微带的过渡结构.采用电磁场电路设计软件ADS,大大提高了毫米波电路设计的效率和准确度.测试结果表明,在输出92～96 GHz频带范围内,倍频损耗在22 dB以内.基波和三次谐波的抑制大于24 dB.该二倍频器符合工程使用的标准,同时其设计过程也表明了计算机辅助设计在毫米波电路设计方面是非常有价值的,可以大大提高工作效率.     

宽带毫米波四倍频器

对毫米波宽带四倍频器的设计方法并进行了理论分析及计算仿真。介绍了利用平衡式结构对奇次谐波进行抑制,从而实现宽带偶次倍频的原理,提出了选择肖特基二极管的原则。利用HFSS仿真和优化电路结构,采用微带线鳍线结构实现了宽频带的毫米波二倍频器。在此基础上,采用两级倍频的方式实现了宽带毫米波四倍频器。设计的Ka波段毫米波四倍频器输入频率6.625～10 GHz,输入功率为10 dBm时,在26.5～40 GHz频率范围内,输出功率大于10 dBm,对三次和五次谐波的抑制大于20 dBc。     

基于InP HBT工艺的C波段高谐波抑制有源三倍频器MMIC

基于0.7μm InP HBT工艺,设计了一款C波段高谐波抑制有源三倍频器MMIC。三倍频核心电路采用AB类差分级联三极管(cascode)结构,可产生丰富的奇次谐波信号,通过输出匹配网络滤出三次谐波信号并抑制其他谐波信号。输入端利用有源巴伦实现单端信号到差分信号的转换,提供较大的驱动功率同时节省面积;输出端级联缓冲放大器,提高输出功率。常温状态下,当输入驱动功率为-5 dBm时,该三倍频器在输出频率3.9~6.9 GHz范围内,输出功率大于10 dBm,偶次谐波抑制度大于33 dBc,基波抑制度大于35 dBc,五次谐波抑制度大于24 dBc。芯片供电方式为单电源+3.3 V供电,直流功耗为198 mW。     

微波PIN二极管倍频器研究

用理想的开关模型对反向并联PIN二极管对的输出频谱和倍频损耗进行分析,与混频二极管倍频器和变容二极管倍频器进行了比较,分析了PIN二极管的倍频机理。对微波PIN二极管倍频器进行了实验研究,得出了有益的结论。研制的S波段和C波段五倍频器倍频损耗分别达到15.4 dB和10.6 dB,而S波段的倍频源相位噪声达到—136 dBc/Hz@10 kHz,具有低噪声性能。     

W波段宽带倍频器的设计与仿真

本文介绍了一种由低次级联形式构成的W波段宽带六倍频器。输入信号先经过MMIC得到二倍频,再由反向并联二极管对平衡结构实现宽带三倍频,从而将Ku波段信号六倍频到W波段。该倍频器的输入端口为玻璃绝缘子同轴转换接头,输出为WR-10标准矩形波导结构。仿真结果表明当输入信号功率为20dBm时,三倍频器在整个W波段的输出三次谐波功率为4.5dBm左右,变频损耗小于17dB。该设计可以降低毫米波设备的主振频率,扩展已有微波信号源的工作频段。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.