离子注入AlN 单晶的荧光谱分析

High concentrations of Si and Zn were implanted into （0001） AlN bulk crystal grown by the self-seeded physical vapor transport （PVT） method. Cathode luminescence （CL） and photoluminescence （PL） spectroscopy were used to investigate the defects and properties of the implanted AlN. PL spectra of the implanted AlN are dominated by a broad near-band luminescence peak between 200 and 254 nm. After high temperature annealing, implantation induced lattice damages are recovered and the PL intensity increases significantly, suggesting that the implanted impurity Si and Zn occupy lattice site of Al. CL results imply that a 457 nm peak is Al vacancy related. Resistance of the AlN samples is still very high after annealing, indicating a low electrical activation efficiency of the impurity in AlN single crystal.     

Novel Bi-substituted Yttrium Iron Garnet Film／Crystal Composite for Magneto-optical Applications

The novel Bi-substituted rare-earth iron garnet films were grown by the modified liquid phase epitaxy (LPE) technique for use as a 45° Faraday rotator in optical isolators. First, single crystals of Y3 Fe5 O12(YIG), with a lattice constant of 1. 237 8 nm, were grown by means of the Czochralski method. Using the seed crystal of YIG instead of the conventional non-magnetic garnet of Gd3Ga5O12 (GGG) as a substrate,a film of BiYbIG was grown by means of the LPE method from Bi2O3 - B2O3 fluxes. The structural, magnetic and magneto-optical properties of BiYbIG LPE film/YIG crystal composite have been investigated using directional X-ray diffraction (XRD), electron probe microanalysis (EPMA), vibrating sample magnetometer (VMS) and near-infrared transmission spectrometry. The saturation magnetization 4πMs has been estimated to be about 1.2×10 6 A/m. The Faraday rotation spectrum was measured by the method of rotating analyzer ellipsometry (RAE) with the wavelength varied from 800 nm to 1 700 nm. The resultant Bi0.37 Yb2.63 Fe5 O12LPE film/YIG crystal composite showed an increased Faraday rotation coefficient due to doping Bi3 ions into the dodecahedral sites of the magnetic garnet without increasing absorption loss, therefore a good magnetooptic figure of merit,defined by the ratio of Faraday rotation and optical absorption loss, has been achieved of 21.5 and 30.2 (°)/dB at 1 300 and 1 550 nm wavelengths respectively and room temperature. Since Yb3 and Y3 ions provide the opposite contribution to the wideband and temperature characteristics of Faraday rotation,the values of Faraday rotation wavelength and temperature coefficients were reduced to 0.06 %/nm and 0.007(°)/℃ at 1 550 nm wavelength, respectively.     

Growth and optical properties of Dy3+/Eu3+ co-doped NaYF4 single crystals with cubic lattice for white LED application

Dy3+/Eu3+ co-doped cubic lattice NaYF4 single crystal with high quality in the size of ~Φ1.0 cm×10.0 cm was grown by an improved Bridgman method using potassium fluoride (KF) as assistant flux. X-ray diffraction (XRD), absorption spectra, excitation spectra and emission spectra are measured to investigate the phase and luminescent properties of the crystal. The effects of excitation wavelength and concentrations of Dy3+ and Eu3+ ions on the luminescent characteristics are analyzed. The NaYF4 single crystal with the doping molar concentrations of 1.205% Dy3+ and 0.366% Eu3+ exhibits an excellent white light emission with chromaticity coordinates of x=0.321, y=0.332. It indicates that the Dy3+/Eu3+ co-doped cubic lattice NaYF4 single crystal can be a potential luminescent material for the ultraviolet (UV) light excited white light emitting diode (w-LED).     

Photoluminescence origin of nanocrystalline SiC films

The nanocrystalline SiC films were prepared on Si then annealed at 800℃ and 1 000℃ for 30 minutes （111） substrates by rf magnetron sputtering and in a vacuum annealing system. The crystal structure and crystallization of as-annealed SiC films were determined by the Fourier transform infrared （FIR） absorption spectra and the X-ray diffraction （XRD） analysis. Measurement of photoluminescence （PL） of the nanocrystalline SiC （nc-SiC） films shows that the blue light with 473 nm and 477 nm wavelengths emitted at room temperature and that the PL peak shifts to shorter wavelength side and the PL intensity becomes stronger as the annealing temperature decreases. The time-resolved spectrum of the PL at 477 nm exhibits a bi-exponential decay process with lifetimes of 600 ps and 5 ns and a characteristic of the direct band gap. The strong blue light emission with short PL lifetimes suggests that the quantum confinement effect of the SiC nanocrystals resulted in the radiative recombination of the direct optical transitions.     

Molecular-beam epitaxy of a strongly lattice-mismatched heterosystem AlN/Si(111) for application in SAW devices

The results of using molecular-beam epitaxy for growing piezoelectric AlN films on Si (111) substrates suitable for device applications are reported. The technological conditions for growth of stoichiometric AlN by controlling the surface reconstruction occurring under various thermodynamic conditions on the growth surface are determined. The films of the hexagonal polytype of AlN possess high crystalline perfection and an atomically smooth epitaxial surface. The mechanism for relaxation of the AlN crystal lattice over a distance of one monolayer from the heterojunction is found. It is demonstrated that the AlN film is piezoelectric. Investigations of the temporal characteristics of a SAW attest to a low level of scattering of the wave during propagation. The electromechanical coupling constant is measured in interdigital transducer geometry (λ=16 mm) and is found to be 0.07 % at a frequency f=286 MHz, in good agreement with the theoretical value for a 1.04-μm-thick AlN film. Fiz. Tekh. Poluprovodn. 33, 1372–1378 (November 1999)     

Influence of lattice symmetry and hole shape on the light enhanced transmission through the subwavelength hole arrays

The golden films with various subwavelength hole arrays on the film surface are designed and fabricated on glass substrate by electron beam lithograply （EBL）, focused ion beam （FIB）, and reactive ion etching （RIE）, respectively. The influences of the hole array symmetry and the hole shape on the light-enhanced transmission through the films are observed and simulated. The experimental results show that when the array lattice constant and the hole diameter are the same in the different array structures which are 1 μm and 350 nm respectively, the square hole arrays exhibit two transmission peaks at 1170 nm and 1580 nm with the transmissivities of 3% and 6%, respectively, while the hexagonal hole arrays exhibit an enhanced peak of 14% at 1340 nm; when the lattice constant and the duty cycle are the same for different array stucture,.the transmission peaks are different for different hole shapes, which are at 763 nm with transmissivity of 12% for rectangular holes and at 703 nm with the one of 9%, respectively The numerical simulation results by using the transfer matrix method （TMM） are consistent with the observed results.     

Elaboration and characterization of a KCl single crystal doped with nanocrystalsof a Sb2O3 semiconductor

Undoped and doped KCl single crystals have been successfully elaborated via the Czochralski（Cz） method.The effects of dopant Sb₂O₃ nanocrystals on structural and optical properties were investigated by a number of techniques,including X-ray diffraction（XRD）,scanning electron microscopy（SEM）,energy dispersive X-ray（EDAX） analysis,UV-visible and photoluminescence（PL） spectrophotometers.An XRD pattern of KCl:Sb₂O₃ reveals that the Sb₂O₃ nanocrystals are in the well-crystalline orthorhombic phase.The broadening of diffraction peaks indicated the presence of a Sb₂O₃ semiconductor in the nanometer size regime.The shift of absorption and PL peaks is observed near 334 nm and 360 nm respectively due to the quantum confinement effect in Sb₂O₃ nanocrystals.Particle sizes calculated from XRD studies agree fairly well with those estimated from optical studies.An SEM image of the surface KCl:Sb₂O₃ single crystal shows large quasi-spherical of Sb₂O₃ crystallites scattered on the surface.The elemental analysis from EDAX demonstrates that the KCl:Sb₂O₃ single crystal is slightly rich in oxygen and a source of excessive quantities of oxygen is discussed.     

Photonic band gap of 2D complex lattice photonic crystal

It is of great significance to present a photonic crystal lattice structure with a wide photonic bandgap. A two-dimension complex lattice photonic crystal is proposed. The photonic crystal is composed of complex lattices with triangular structure, and each single cell is surrounded by six scatterers in an hexagon. The photonic band gaps are calculated based on the plane wave expansion (PWE) method. The results indicate that the photonic crystal has tunable large TM polarization band gap, and a gap-midgap ra...     

Optical properties of Cr3+ doped Na5Lu9F32 single crystals grown by the Bridgman method

The growth of Na5Lu9F32 single crystals doped with Cr3+ ions in 0.1 mol%, 0.2 mol% and 0.5 mol% concentrations by Bridgman method was reported. The optical absorption and luminescence spectra decisively demonstrate that the Cr dopant enters Na5Lu9F32 as Cr3+. Fluorescence emission at wavelengths of 418 nm, 444 nm, 653 nm and 678 nm can be observed under the excitation of 372 nm and the fluorescence lifetime at 418 nm was measured to be ~10.31 μs. The possible crystal sites for Cr3+ ions in Na5Lu9F32 single crystal were discussed, and the lattice parameter Dq, Racach parameters B and C were estimated.     

A high-drop hole-type photonic crystal add-drop filter

Based on the effect of total internal reflection（TIR）and photonic band gap,a new type of hexagonal-lattice hole-type silicon photonic crystal add-drop filter is proposed with a large circular hole as inner ring.The single mode operation is realized by compressing the two rows of photonic crystal above and below the line defect waveguide.Two-dimensional（2D）finite-difference time-domain（FDTD）method is then applied to investigate the impacts of side length of inner ring and coupling strength on its drop efficiency.It is also fairly compared with the traditional inner ring structure composed of hexagonal-lattice holes.The results show that the proposed structure can offer higher spectral selectivity than the traditional one.Two channel wavelengths of 1.425μm and 1.45μm can be simultaneously dropped at corresponding ports with drop efficiency of more than 90%and quality factor of 900 in the proposed configuration when the width of bus waveguide,the side length of inner ring and the coupling strength are 0.8 3 a,4a and 0,respectively,where a is the lattice constant.     

生长条件及退火处理对磷化铟单晶结构完整性的影响

利用X射线双晶衍射（XRD）技术研究了原生及退火处理后的磷化铟单晶的晶格完整性. 原生磷化铟单晶中由于存在着大量的位错和高的残留热应力，导致晶格产生很大的畸变，表现为XRD半峰宽的值较高并且分布不均匀，甚至有些原生的磷化铟单晶片出现XRD双峰等. 通过降低晶体生长过程的温度梯度，降低位错密度并减小晶体中的残留热应力可以提高晶体的完整性. 利用高温退火处理也可有效地降低磷化铟晶体中的残留热应力. 对磷化铟晶体生长过程中熔体的配比、掺杂浓度等条件对结构完整性的影响进行了分析.     

氮气流量对磁控溅射AlN薄膜光学性能的影响

AlN薄膜因其具有优异的物理化学性能而有着广阔的应用前景,采用反应磁控溅射法在低温条件下制备AlN薄膜是近些年科研工作的热点.采用直流磁控溅射法,于室温下通入不同流量的氮气在p型硅(100)和载玻片衬底上沉积了AlN薄膜.利用傅里叶变换红外(FTIR)光谱仪、X射线衍射仪(XRD)、扫描电子显微镜(SEM)和分光光度计等分析薄膜的组分、结构、形貌和光学性能.结果表明随着氮气流量的增加,AIN薄膜质量变好,N2流量为8 cma/min时制备的AlN薄膜为六方纤锌矿结构,在680 cm-1处具有明显的FTIR吸收峰,进一步说明成功制备了AlN薄膜.在300～ 900 nm的波长范围内,薄膜透过率最高可达94％;薄膜带隙随着氮气流量的增加而增大,最大带隙约为4.04 eV.     

VB-GaAs单晶生长技术

半导体GaAs单晶材料通常用于制作激光二极管和高亮度发光二极管.对于激光二极管而言,特别需要低位错材料.简要阐述了垂直布里奇曼(VB)法生长GaAs单晶材料的动力学原理及VB-GaAs单晶的生长技术.本技术可实现低位错GaAs单晶材料的生长,拉制的50 mm掺硅GaAs单晶的平均位错密度为500 cm-2,最大为1000 cm-2.     

SiC籽晶上生长AlN单晶的断裂特性研究

通过扫描电镜(SEM)观察了SiC籽晶上生长AlN单晶的断裂面形貌。模拟了SiC籽晶与AlN晶体之间的应力分布。通过计算不同晶面的面间距,确定了六方晶系的AlN晶体中m面为解理面。拉曼光谱仪对不同晶面的特性进行了表征。结果表明,断裂面为m面,即裂纹扩展并沿m面解理形成断裂面。切割面为c面,AlN沿垂直于c方向生长。拉曼光谱中波数为656.2 cm-1的（E2(high)声子模为AlN单晶中的特征拉曼峰） 声子模式的半高宽为6.5 cm-1,晶体质量高。残余的张应力是裂纹产生的主要原因。     

Optimization of High-Quality AlN Epitaxially Grown on (0001) Sapphire by Metal-Organic Vapor-Phase Epitaxy

A systematic study is performed to optimize aluminum nitride (AlN) epilayers grown on (0001) sapphire by metal-organic vapor-phase epitaxy. Specifically, the impact of the AlN nucleation conditions on the crystalline quality and surface morphology of AlN epilayers is studied. Atomic force microscopy (AFM) and x-ray diffraction (XRD) results reveal that the nucleation layer plays a critical role in the growth of subsequent layers. The magnitude of the TMAl flow of AlN nucleation layer is found to have a strong effect on the crystalline quality and surface morphology of the high-temperature (HT) AlN epilayer. A simple Al adatom-diffusion-enhancement model is presented to explain the strong dependence of the crystalline quality and surface morphology on TMAl flow. Furthermore, ammonia flow, nucleation temperature, and growth time of the AlN nucleation layer are found to affect the surface morphology and the crystalline quality as well. A trade-off is found between surface morphology and crystalline quality; that is, we do not obtain the best surface morphology and the highest crystalline quality for the same growth parameters. For optimized AlN nucleation layers and HT AlN epilayers, a clear and continuously linear step-flow pattern with saw-tooth shaped terrace edges is found by AFM on AlN epilayers. Triple-axis x-ray rocking curves show a full-width at half-maximum (FWHM) of 11.5 arcsec and 14.5 arcsec for the (002) and (004) reflection, respectively. KOH etching reveals an etch-pit density (EPD) of 2 × 10⁷ cm⁻², as deduced from AFM measurements.     

基于PVT法自发形核生长AlN晶体的研究

根据物理气相传输法(PVT) AlN晶体生长特点及工艺要求,自主设计了AlN晶体生长炉及其配套热场.FEMAG软件热场模拟结果表明,自主设计的晶体生长炉及其配套热场可以达到AlN晶体生长所需坩埚内部温度梯度要求.基于设计的PVT生长炉,开展了在2 250℃生长温度、40 h长晶时间条件下的自发形核生长实验.实验研究结果表明,在该工艺条件下,通过自发形核可生长得到典型长度为3～Smm、直径为2 mm的高质量AlN单晶;AlN晶体的c-plane(0001)生长速率最快,易形成尖锥形晶体结构,不利于晶体的扩径;Raman表征图谱中AlN晶体的E2 (high)半峰宽仅为5.65 cm-1,表明AlN晶体质量非常高;SEM、EDS分析得出晶体内部质量较为均匀,c-plane和m-plane腐蚀形貌特征明显.     

新型长波红外非线性晶体PbIn6Te10的生长

新型长波红外非线性晶体PbIn6Te10具有透光波段宽(1.3~31μm)、非线性系数大(d11=51 pm/V),双折射适宜(~0.05)等优点,在14~25μm乃至25μm以上波段具有较大应用潜力。文中通过相图分析结合具体实验,筛选出较合适的组分配比,并采用高温单温区法合成多晶,布里奇曼法生长出尺寸φ11 mm×55 mm的单晶棒。对生长的PbIn6Te10晶体进行X射线衍射、摇摆曲线、透过率等测试,结果表明,晶体为三方结构,晶格常格为a=b=1.496 1 nm,c=1.825 7 nm,生长出的单晶结晶性较好,半高宽(FHWM)约0.253°,2.5~25μm波段晶体的平均透过率在50%以上,对应收系数处于0.3~0.6 cm-1之间。     

稀土锰氧化物Sm1-xBaxMnO3的结构、红外及电性能研究

采用传统固相反应法,制备了一系列钙钛矿结构的稀土锰氧化物Sm<,1-x>Ba<,x>MnO<,3>(x=0～0.5)样品,借助XRD和FTIR对样品的相结构和组成进行了研究,用四端子法测量了样品在室温下的电导率.结果表明,当x<0.4时,样品为单一的钙钛矿结构;当0.4≤x≤0.5时,样品为Sm<,1-x>Ba<,x....     

天然与处理翡翠的光谱学研究

文章通过对天然翡翠和漂白充填处理翡翠的共焦显微拉曼光谱(514nm)测定,得到表征翡翠硬玉结构的拉曼位移为1036cm-1,696cm-1和374cm-1,显微放大能观察到翡翠经酸洗产生的裂纹及其充填的有机物,经红外光谱的测定证实该充填物为环氧树脂,且表征环氧树脂的拉曼峰为777cm-1,1123cm-1,1611cm-1,2930cm-1和3065cm-1;通过相同测试条件下,并在极短的积分时间内对天然翡翠的绿色、白色部位和染绿色翡翠进行拉曼光谱(785nm)测定,并结合绿色翡翠紫外-可见光-近红外吸收光谱的测定,得到吸收光谱中的吸收峰637nm,658nm和691nm归属于翡翠晶体中的Cr3 ,Cr3 的大量存在将使翡翠的拉曼光谱产生极强的荧光,而染色翡翠中染料产生的荧光相对较弱.