Ultraviolet photodetector based on Au doped TiO2 nanowires array with low dark current

Au nanoparticles doped TiO2 nanowires (NWs) arrays with an average diameter of 100 nm were synthesized through a facile solvothermal method. Thereafter, metal/semiconductor/metal (MSM) structured detectors with Ag electrodes were fabricated on these NWs. The ultraviolet (UV) sensing characteristics of pure TiO2 and Au-doped ones (Au-TiO2) were investigated. Compared with pure TiO2, the Au-TiO2 NWs based device shows a much lower dark current of 1.5 nA at 3 V bias. The low dark current mechanism might be due to the promoted directional transmission of carriers induced by Au doping. The photoresponse is nearly one order of magnitude under 360 nm monochromatic illumination. The Au-TiO2 NWs detector with simple fabrication process, low noise and good overall performance provides a broad way in fabricating UV imaging arrays.     

High density, high aspect ratio through-wafer electrical interconnect vias for MEMS packaging

A novel micro-electromechanical system (MEMS) package has been developed based on modular, reconfigurable components such as substrate, cap, bond region and through-wafer electrical interconnect (TWEI). The paper presents the details of the process for the fabrication of high density, high aspect ratio TWEIs that includes deep dry etching holes through the substrate, depositing an insulation layer and depositing a conductive layer. Two different processes to make the TWEI have been developed: Post-Process where the TWEI is fabricated after the fabrication of MEMS devices and Pre-Process where the TWEI is fabricated before the fabrication of MEMS device. For both processes, the interconnect holes are created by an anisotropic etching process-inductively coupled plasma (ICP) etching. For the post-process, a silicon dioxide layer was deposited in a plasma enhanced chemical vapor deposition (PECVD) chamber to insulate the interconnect holes. For the pre-process, the PECVD process was replaced with a thermal oxide growth step to ensure a more conformal oxide coating. Three different ways to deposit a conductive layer after deposition of an insulation layer have been practiced: sputtering Cu, electroplating Cu and low-pressure chemical vapor deposition (LPCVD) of phosphorus doped polysilicon. The electrical performance of the TWEIs achieved in each way was measured, analyzed and discussed.     

微型压力传感器薄膜凹槽的制造技术

压力薄膜及凹槽是微型压力传感器中的关键部分,其制造方法主要有两种:1)对体硅进行选择性移除的体加工;2)对表面淀积的牺牲层进行选择性移除的表面加工.针对薄膜凹槽的制作,介绍了几种典型的体加工和表面加工技术,分析了其中的某些关键步骤及其优缺点,为薄膜凹槽的制作提供指导性意见.     

单片集成CMOS电阻真空传感器

设计了一种工作在恒电压模式的、微热板结构的单片集成电阻真空传感器芯片.提出了一种以CMOS集成电路中的介质层与钝化层为结构层、栅多晶硅为牺牲层、第二层多晶硅为加热电阻的微传感器单芯片集成工艺模式,制定了相应的工艺流程.采用0.6μm CMOS数模混合集成电路工艺,结合牺牲层腐蚀技术实现了单片集成真空传感器的加工,测试结果显示该芯片能够测量2～105Pa范围内的气压大小,且输出电压范围可调,验证了单片集成工艺的可行性.     

一种基于GaAs MMIC技术的X波段电容式膜桥MEMS微波功率传感器

This paper presents the modeling, fabrication, and measurement of a capacitive membrane MEMS microwave power sensor. The sensor measures microwave power coupled from coplanar waveguide （CPW） transmission lines by a MEMS membrane and then converts it into a DC voltage output by using thermopiles. Since the fabrication process is fully compatible with the GaAs monolithic microwave integrated circuit （MMIC） process, this sensor could be conveniently embedded into MMIC. From the measured DC voltage output and S-parameters, the average sensitivity in the X-band is 225.43μV/mW, while the reflection loss is below -14 dB. The MEMS microwave power sensor has good linearity with a voltage standing wave ration of less than 1.513 in the whole X-band. In addition, the measurements using amplitude modulation signals prove that the modulation index directly influences the output DC voltage.     

Evaluation of MUMPS polysilicon structures for thermal flow sensors

The air flow measurement has been studied for its application in many fields. Among flow sensors, those operated under a thermal principle have occupied an important position. The application of micro-electro mechanical systems (MEMS) technologies for designing such devices will allow reducing its size, response time and to increase the sensitivity.In the community of MEMS’ designers it is well established a multi-user service for prototyping named multi-user MEMS processes (MUMPS). It is a general purpose surface micromachining process which employs polysilicon as structural material and silicon oxide as sacrificial layer. There are no reported, to the best of our knowledge, flow sensors developed using this technology.In this work the linear and quadratic temperature coefficients of polysilicon resistors are experimentally determined in anchored, suspended and stacked microstructures fabricated with this process to study their suitability for flow and temperature sensors. The thermal resistance of the three structures is also calculated, determining that suspended plates characteristics indicate their suitability for constant temperature anemometers.     

基于静电排斥力的大冲程MEMS变形镜

设计并制造了一种基于静电排斥力的大冲程MEMS变形镜,此变形镜采用了三个多晶硅结构层和一个金属反射层的设计.利用表面硅工艺完成了变形镜的加工,结合有限元分析软件和白光干涉仪对三种不同驱动器电极空间分布方式的静电排斥型变形镜进行了分析和研究.测试结果表明,静电排斥型变形镜在200V下能实现1.7 μm以上的位移,冲程较传...     

基于NPB和Bphen的有机紫外探测器件的性能研究

有机紫外光探测器(Organic Ultraviolet Photodetector,OUV-PD)因质量轻、柔性和成本低等优点已引起广泛关注.以m-MTDATA、NPB和Bphen分别为空穴注入层、给体和受体制备了OUV-PD.器件结构为:ITO/m-MTDATA/NPB/Bphen/LiF/Al,通过优化给受体层的厚度,实现了器件的最优性能.当NPB厚度为60 nm、Bphen厚度为90 nm时器件性能最佳,在光照强度为1.05 mW/cm2、波长为365 nm的紫外光照射下,最大响应度为131 mA/W.同时,结合材料特点和器件结构讨论了工作机理.     

A polysilicon contacted subcollector BJT for a three-dimensionalBiCMOS process

A polysilicon contacted subcollector (PCS) bipolar junction transistor (BJT) was fabricated using selective epitaxial growth (SEG) of silicon to form the active region. The fabrication is the first step in the development of a novel 3-D BiCMOS process. To study the efficacy of the polysilicon collector contact, three types of BJTs were fabricated and their collector resistances were compared. These were the PCS BJT, a BJT fabricated in SEG silicon grown from a shallow trench incorporating a shallow collector contact with a buried layer, and a BJT fabricated in the silicon substrate with a shallow collector contact but no buried layer. The PCS BJT exhibited the smallest collector resistance as well as excellent device characteristics, demonstrating its viability for a 3-D BiCMOS process     

MEMS F-P 干涉型压力传感器

为了满足工业、航天、国防等领域对微型化压力传感器的需求,提出了基于微机电系统（MEMS,Micro electromechanical System）技术制作的非本征型光纤法布里-珀罗（F-P）压力传感器,该传感器传感头由全玻璃材料构成。主要研究了MEMS 技术制作全玻璃结构式压力传感器工艺,结合溅射、光刻、腐蚀等工艺在7 740 wafer 基底上制作出F-P 腔体,利用低压化学气相沉积（LPCVD）的方法在基底上沉积一层40 nm 的非晶硅作为中间层。通过阳极键合技术在温度400℃下完成玻璃与玻璃的键合,并搭建了该传感器的压力测量平台。实验结果表明:在压力线性范围0~400 kPa 内传感器具有很高的重复性,达到0.3%。灵敏度达到1.764 nm/kPa;在传感器使用范围0~80℃内,热敏感系数为 0.15 nm/℃。该传感器的研究对设计制作改善了该类传感器的热膨胀失配问题,对低温漂型压力传感器的研究有一定参考价值。     

4H-SiC肖特基微型同位素电池(英文)

半导体同位素电池由于其寿命长、集成性优良、环境适应性强等特点成为解决MEMS能源问题的理想手段。利用4H-SiC材料的宽禁带特性,制造了4H-SiC肖特基同位素电池。对电池的耗尽层厚度以及掺杂浓度进行了优化设计,对肖特基金属进行了选择。使用4mCi/cm2的63Ni作为同位素电池的放射源对制造的同位素电池进行了测试。测试结果表明,该同位素电池可以获得31.3nW/cm2的功率密度、0.5V的开路电压、3.13×10-8A/cm2的短路电流密度和1.3%的转换效率。将电池的输出特性和硅基的平板型、3D结构电池输出特性进行了比较,证明4H-SiC肖特基同位素电池能够获得较高的功率密度。电池的性能可通过提升势垒高度、提高工艺质量、更换同位素等方式得到提高。     

Optical sensor for temperature measurement using bimetallic concept

In this paper, we report an optical fiber sensor for measuring temperature based on bimetallic concept. The sensor is designed by following the basic principle of Fabry–Perot interferometer and theoretical detail of the sensor has been outlined here with a numerical study. An important feature of the proposed sensor is that the fabrication will be done on a commercial multimode optical fiber. The Micro-Electro-Mechanical Systems (MEMS) based fabrication process could be performed directly on a multimode optical fiber end face which will eliminate the need for adhesive in packaging. The sensor could be fabricated as sensor arrays for micro level applications. The potential application of the proposed optical sensor includes biomedical applications, nano research, microfluidics, and other MEMS devices.     

Fabrication and Characterization of Benzocyclobutene Optical Waveguides by UV Pulsed-Laser Illumination

Buried-type benzocyclobutene (BCB) optical waveguides fabricated by UV pulsed-laser illumination are proposed and comprehensively characterized in this paper. The fabrication process is greatly simplified as compared to conventional dry-etched ridge-type BCB waveguides. The measured propagation loss at 1548 nm is as low as 0.6 dB/cm due to the buried waveguide structure. And the produced refractive index change is dependent upon the number of laser shots such that single-mode waveguides with different mode sizes can be tailored for efficient coupling. Furthermore, rigorous analyses of surface damage threshold, rms roughness, and chemical characteristics under different illumination conditions are presented to illustrate the design considerations and the chemical mechanism of the UV-induced BCB waveguides     

高深宽比深隔离槽的刻蚀技术研究

体硅集成MEMS器件中的一个非常重要的技术就是微结构与电路部分的电隔离和互连。由于体硅工艺与传统CMOS工艺不兼容 ,所以形成高深宽比的深隔离槽 (宽约 3μm ,深 2 0～ 10 0μm)是体硅集成中急待解决的工艺难题。本文采用MEMS微加工的DRIE (DeepReactiveIonEtching)技术、热氧化技术和多晶硅填充技术 ,形成了高深宽比的深电隔离槽 (宽 3.6 μm ,深 85μm)。还提出了一种改变深槽形状的方法 ,使深槽的开口变大 ,以利于多晶硅的填充 ,避免了空洞的产生     

A capacitive membrane MEMS microwave power sensor in the X-band based on GaAs MMIC technology

This paper presents the modeling, fabrication, and measurement of a capacitive membrane MEMS microwave power sensor. The sensor measures microwave power coupled from coplanar waveguide (CPW) transmission lines by a MEMS membrane and then converts it into a DC voltage output by using thermopiles. Since the fabrication process is fully compatible with the GaAs monolithic microwave integrated circuit (MMIC) process, this sensor could be conveniently embedded into MMIC. From the measured DC voltage output and S-parameters, the average sensitivity in the X-band is 225.43 μV/mW, while the reflection loss is below-14 dB. The MEMS microwave power sensor has good linearity with a voltage standing wave ration of less than 1.513 in the whole X-band. In addition, the measurements using amplitude modulation signals prove that the modulation index directly influences the output DC voltage.     

High‐Performance,Transparent Thin Film Hydrogen Gas Sensor Using 2D Electron Gas at Interface of Oxide Thin Film Heterostructure Grown by Atomic Layer Deposition

A high‐performance, transparent, and extremely thin (<15 nm) hydrogen (H₂) gas sensor is developed using 2D electron gas (2DEG) at the interface of an Al₂O₃/TiO₂ thin film heterostructure grown by atomic layer deposition (ALD), without using an epitaxial layer or a single crystalline substrate. Palladium nanoparticles (≈2 nm in thickness) are used on the surface of the Al₂O₃/TiO₂ thin film heterostructure to detect H₂. This extremely thin gas sensor can be fabricated on general substrates such as a quartz, enabling its practical application. Interestingly, the electron density of the Al₂O₃/TiO₂ thin film heterostructure can be tailored using ALD process temperature in contrast to 2DEG at the epitaxial interfaces of the oxide heterostructures such as LaAlO₃/SrTiO₃. This tunability provides the optimal electron density for H₂ detection. The Pd/Al₂O₃/TiO₂ sensor detects H₂ gas quickly with a short response time of <30 s at 300 K which outperforms conventional H₂ gas sensors, indicating that heating modules are not required for the rapid detection of H₂. A wide bandgap (>3.2 eV) with the extremely thin film thickness allows for a transparent sensor (transmittance of 83% in the visible spectrum) and this fabrication scheme enables the development of flexible gas sensors.     

CMOS工艺兼容多晶硅压力敏感膜的设计与加工

在MEMS表面加工工艺中 ,多晶硅薄膜是微结构的重要组成部分。本文考虑加工工艺中残余应力的影响和多晶硅材料的强度范围 ,建立多晶硅膜的大变形模型 ,设计可用于压力传感器应用的多晶硅薄膜几何尺寸。采用有限元方法对多晶硅薄膜进行力学分析和设计验证 ,提出了CMOS工艺兼容的多晶硅压力敏感膜的加工方法 ,并且根据所设计的工艺进行了电容式压力传感器微结构的加工 ,加工结果说明了多晶硅薄膜设计的合理性和CMOS兼容工艺的可行性     

自组装型SnO2纳米线超低浓度H2传感器的研制

采用FESEM及气敏传感器测试系统,研究了用自组装方式制备的SnO2纳米线气敏传感器的氢敏特性。结果表明:在工作温度为200℃时,对于超低浓度[(2~8)×10–6]的氢气具有0.58~1.00的探测灵敏度及3 s的响应时间和10 s的恢复时间。继而从气敏机制、自组装制备方式、SnO2纳米线的优良的比表面特性及其尺度(30~40 nm)低于德拜长度(43 nm)等角度,解释了此传感器对超低浓度氢气具有良好气敏特性的原因。     

Air-gap polycrystalline silicon thin-film transistors for fully integrated sensors

Air gap thin-film transistors (TFTs) were fabricated using a solid phase crystallization process. Undoped polycrystalline silicon (polysilicon) was used as the active layer and a highly doped polysilicon bridge was used as the gate, which promotes the air gap. These TFTs have comparable threshold voltage (V/sub T/) and subthreshold slope characteristics to TFTs fabricated using pulsed laser crystallization, and using silicon dioxide as gate insulator. The low value of V/sub T/ is very important for low power consumption. Moreover, the air-gap TFT fabrication process is compatible with low-temperature glass substrate technology, which allows the integration of sensors and electronics circuits.     

Novel p–p Heterojunctions Self‐Powered Broadband Photodetectors with Ultrafast Speed and High Responsivity

Novel inorganic/organic self‐powered UV–vis photodetectors based on single Se microtube and conducting polymers—polyaniline (PANI), polypyrrole (PPy), and poly(3,4‐ethylenedioxythiophene) (PEDOT)—are fabricated. The conducting polymers are directly coated on the surface of a single Se microtube via a facile and low‐cost in situ polymerization method. The integrated Se/PANI photodetector with 45‐nm‐thick PANI layer shows excellent self‐powered behavior under UV–vis light illumination. In particular, it exhibits high on/off ratio of 1.1 × 10³, responsivity (120 mA W^?1), large detectivity (3.78 × 10¹¹ Jones), and ultrafast response speed (rise time of 4.5 µs and fall time of 2.84 ms) at zero bias at 610 nm (0.434 mW cm^?2)‐light illumination. Moreover, the individual Se/PPy and Se/PEDOT self‐powered photodetectors also exhibit fast and stable responses, including responsivity of 70 and 5.5 mA W^?1, rise time of 0.35 and 1.00 ms, fall time of 16.97 and 9.78 ms, respectively. Given the simple device architecture and low cost fabrication process, this work provides a promising way to fabricate inorganic/organic, high‐performance, self‐powered photodetectors.