共查询到19条相似文献,搜索用时 62 毫秒
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本文研究了退火对C60膜电导率的影响.结果表明,从室温到200℃的温度范围内,C60膜具有明显的半导体性质,室温电导率在10-5~10-7(Ω·cm)-1的范围内.薄膜在200℃温度下恒温保持过程中,当时间小于2.5小时时电导率的增大是由于薄膜中不稳定的hcp相的减少引起的;而相互通连的晶粒数目的减少导致退火时间大于2.5小时的薄膜电导率的减小.相互通连的晶粒数目的减少使得晶间势垒变高,从而使电导率变小.通连晶粒间缺陷的减少导致激活能变大,这些缺陷在C60膜的能带中引入缺陷态.σ-1/T图中高温区域电导偏 相似文献
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采用惰性气氛蒸发法制备 C6 0 薄膜 ,用原子力显微镜 (AFM)、X射线衍射 (XRD)、红外光谱 (IR)及紫外 -可见光谱研究了在氩 (Ar)气氛下生长的 C6 0 薄膜的表面形貌、结构及光吸收特性 .AFM测量表明在 Ar气氛下生长的C6 0 薄膜的表面生长岛更尖锐 ,并且有较大直径的表面粒子 .由紫外 -可见光吸收谱测量发现 Ar气氛下生长的 C6 0 薄膜的强度和吸收峰位置与在真空下生长的 C6 0 薄膜比较有大的红移 .可求出在 Ar气氛下生长的 C6 0 薄膜的光学禁带宽度 Eg=2 .2 4e V,比在真空下生长的 C6 0 薄膜禁带宽度 (2 .0 2 e V)要大 .与真空下生长的 C6 0 薄膜比较 相似文献
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铜纳米薄膜在微电子器件中应用广泛。然而,纳米尺度的铜表面极易发生氧化,影响铜纳米薄膜的电学性能。利用物理气相沉积方法制备了铜纳米薄膜,研究了基底粗糙度对铜纳米薄膜电学性能退化的影响,发现基底粗糙度越大,铜的电学性能退化越快。通过在铜纳米薄膜的表面蒸镀铝纳米薄膜对铜纳米薄膜进行防护,研究了铝纳米薄膜厚度对其在不同环境下防护效果的影响,结果显示铝膜厚度越大,对铜纳米薄膜的防护效果越好。通过高温破坏测试,发现铝纳米薄膜能有效地提高铜纳米薄膜的极限工作温度,当铝纳米薄膜厚度为10 nm时,可将铜纳米薄膜的极限工作温度提高2.5倍。 相似文献
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采用热丝化学气相沉积法在覆盖C60膜的硅基片上沉积金刚石膜,研究了金刚石膜的成核与生长.实验结果表明,金刚石的成核密度可达1×106Cm-2,利用这种方法可实现衬底无损淀积金刚石膜.C60之所以能够促进金刚石成核,我们认为主要与C60分子本身独特的结构及H原子的激活作用有关.同时,高温下C60分解后残留的石墨等碳碎片以及C原子与衬底Si反应生成的SiC都可作为金刚石的成核位. 相似文献
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Organic thin film transistors with C_(60) as an n-type semiconductor have been fabricated.A tantalum pentoxide(Ta_2O_5)/poly-methylmethacrylate(PMMA) double-layer structured gate dielectric was used.The Ta_2O_5 layer was prepared by using a simple solution-based and economical anodization technique.Our results demonstrate that double gate insulators can combine the advantage of Ta_2O_5 with high dielectric constant and polymer insulator for a better interface with the organic semiconductor.The performanc... 相似文献
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The optoelectronic properties of heterojunction thin film device with ITO/CuPc/C60/Al structure have been investigated through analyzing their current–voltage characteristics, optical absorption and photocurrent. In this organic photovoltaic device CuPc acts as an optically active layer, C60 as the electron–transporting layer and ITO and Al as electrodes. It is observed that under illumination, the excitons are formed, which subsequently drift towards the interface with C60, where an internal electric field is present. The excitons that reach to the interface are subsequently dissociated into free charge carriers due to the electric field present at the interface. The experimental results show that in this device the total current density is a function of injected carriers at electrode–organic semiconductor surface, the leakage current through the organic layer and collected photogenerated current that results from the effective dissociation of excitons. 相似文献
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The optoelectronic properties of heterojunction thin film devices with ITO/CuPc/C60/A1 structure have been investigated by analyzing their current-voltage characteristics,optical absorption and photocurrent.In this organic photovoltaic device,CuPc acts as an optically active layer,C60 as an electron-transporting layer and ITO and A1 as electrodes.It is observed that,under illumination,excitons are formed,which subsequently drift towards the interface with C60,where an internal electric field is present.The excitons that reach the interface are subsequently dissociated into free charge carriers due to the electric field present at the interface.The experimental results show that in this device the total current density is a function of injected carriers at the electrode-organic semiconductor surface,the leakage current through the organic layer and collected photogenerated current that results from the effective dissociation of excitons. 相似文献
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本文研究了在微波等离子体CVD系统中,金刚石在C60蒸发膜表面的成核行为,观察到金刚石晶核聚集现象,并且讨论了这种成核行为的产生机理。 相似文献
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制备了结构为ITO/CuPc(25nm)/NPB(40nm)/Alq3(xnm)/C60(ynm)/LiF(1nm)/Al(100nm)的有机发光二极管(OLEDs),研究了C60插入层对器件性能的影响。结果表明,在无C60的器件中,当Alq3层较厚时,器件的电流密度-电压(J-V)曲线右移,不利于获得高功率效率;当Alq3层较薄时,又会导致激子在LiF/Al阴极的严重淬灭。实验优化得出,在无C60的器件中,Alq3厚为45nm的器件可获得最高的功率效率。在Alq3与LiF之间插入15nmC60层后,对器件的J-V曲线几乎没有影响,但C60层阻挡了激子向阴极扩散,减少了淬灭。当在Alq3厚度为45nm的器件的Alq3和LiF间插入15nmC60层后,可使器件获得更高的功率效率,尤其是插入15nmC并将Alq厚度降至30nm,获得了最大的功率效率。 相似文献
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讨论了两类C60薄膜作为畔导体材料制备的光电器件:C60电致发光二级管和半导体聚合物/C60导质结二极管、分析了器件的工作原理、指出了C60作为半导体光电材料潜在的应用领域。 相似文献