蓝宝石衬底研磨加工中研磨盘材质的影响

采用W14、W3.5的B4C磨粒对蓝宝石衬底进行粗研磨和精密研磨的试验研究.对比分析铸铁、合成铜和合成锡盘粗研磨蓝宝石衬底的表面粗糙度和研磨表面均匀性,试验结果表明,铸铁研磨盘获得的蓝宝石衬底宏观表面均匀性和平面度均优于合成铜盘和合成锡盘,经铸铁研磨盘加工后的蓝宝石衬底面型峰谷值误差小于5 μm、中心线平均表面粗糙度Ra<0.82 μm.精密研磨试验结果表明,采用合成铜盘和W3.5B4C磨粒有效地改善了蓝宝石衬底表面的均匀性,获得了Ra<20 nm、面型峰谷值误差小于1.6 μm的均匀表面,为蓝宝石的超精密研磨奠定了良好的基础.     

氮化硅陶瓷球精加工表面缺陷的研究

将3种不同直径的氮化硅球坯采用循环加工方法研磨成G5级轴承用陶瓷球。研究了研磨过程中陶瓷球的磨损行为并将磨损缺陷按光学显微镜下的形貌分成5类。采用扫描电子显微镜观察分析各种缺陷并用陶瓷材料断裂力学解释凹坑与裂纹缺陷的形成。研究结果表明，异常的磨粒作为尖锐压头产生凹坑。各种裂纹主要是由起钝压头作用的上研磨盘产生的。材料的晶体结构变化产生雪花缺陷，雪花缺陷抵抗磨粒磨损的能力较差。精研过程中不正确的加工压力和没有破碎的硬磨粒产生擦伤和划痕缺陷。提高球坯圆度，降低粗研加工的载荷和速度可以减少裂纹缺陷。提高磨粒质量可以减少精研中各种机械加工缺陷。     

碳化硼研磨后蓝宝石晶体的亚表面损伤

介绍了蓝宝石材料的亚表面损伤形成机制。考虑碳化硼磨料可产生较小亚表面损伤的优点,本文基于游离磨料研磨方式,研究了不同粒度碳化硼磨料研磨后蓝宝石晶体的亚表面损伤。利用KOH化学腐蚀处理技术,对研磨后的样品进行了刻蚀;通过特定的腐蚀坑图像间接反映了蓝宝石晶体的亚表面损伤形貌特征,获得了W20、W10和W5碳化硼磨料产生的亚表面损伤深度,得到了在不同刻蚀时间下蓝宝石亚表面损伤形貌、表面粗糙度和刻蚀速率。研究结果显示:游离碳化硼磨料研磨造成的蓝宝石晶体的亚表面损伤密度相当显著,但损伤深度并不大,其随磨料粒度的增大而增大,W20、W10和W5粒度的磨料研磨后产生的亚表面损伤深度分别为7.4,4.1和2.9μm,约为磨料粒度的1/2。得到的结果表明采用碳化硼磨料研磨有利于获得低亚表面损伤的蓝宝石晶片,而采用由大到小的磨料逐次研磨可以快速获得低亚表面损伤的蓝宝石晶片。     

研磨压力对固结聚集体磨料垫自修正影响

固结磨料研磨过程中磨料的微破碎是实现固结磨料垫自修正特性的主要途径,研磨压力是影响磨粒微破碎的关键参数。选用单晶金刚石和聚集体金刚石作为磨粒制备固结磨料垫,在15 kPa压力下以石英玻璃为加工对象进行研磨实验,比较两者的材料去除率及加工稳定性;制备了4种陶瓷结合剂含量的聚集体金刚石,并制备成固结聚集体金刚石磨料垫,探索了不同压力下的固结聚集体金刚石磨料垫的自修正性能;分析了研磨后的工件表面粗糙度和表面微观形貌。结果表明:采用固结聚集体金刚石磨料垫,研磨后工件表面粗糙度低,去除效率稳定;在15~21 kPa的压力下,结合剂含量次高的聚集体金刚石研磨效率高,材料去除率达到8.94~12.43μm/min,加工性能较稳定,研磨后的工件表面粗糙度R a在60 nm左右;在3.5~7 kPa压力下,结合剂含量次低的聚集体金刚石研磨性能较稳定,材料去除率在2.67~3.12μm/min,研磨后的表面粗糙度R a在40 nm左右。高结合剂含量的聚集体金刚石磨粒更适合高研磨压力条件,而低结合剂的聚集体金刚石磨粒更适合于低研磨压力。     

Novel highly-efficient and dress-free polishing technique with plasma-assisted surface modification and dressing

Slurry is widely used in polishing difficult-to-machine materials. However, it is accompanied with some issues, such as the agglomeration of abrasives and high disposal cost. Although using fixed abrasive grains instead of slurry can solve these issues, the problems of wear and of loading fixed abrasive grinding stones, which result in decrease of material removal rate (MRR), also need to be solved. Many researches have been conducted on the self-sharpening of fixed abrasive grinding stones. However, the self-sharpening of grinding stones is not efficient with ultra-low polishing pressure, which is not large enough to break bonds so as to expose new abrasives. In this study, a novel dress-free dry polishing process was proposed, where it combines plasma-assisted polishing and plasma-assisted dressing using Ar-based CF₄ plasma and a vitrified-bonded grinding stone. Polishing experiments were conducted on sintered AlN wafer. Also, as the main component of vitrified bond materials, silica was etched using CF₄ plasma, which is equivalent to the continuous dressing of grinding stone surfaces. Since new abrasives could be constantly exposed, a high MRR was maintained. Thus, a dress-free high integrity polishing process was realized. Moreover, the CF₄ plasma irradiation increased the MRR twice, as CF₄ plasma can not only dress a grinding stone in real time but can also modify AlN to AlF₃, which can easily be removed.     

磨粒粒径对蓝宝石研磨均匀性影响的试验研究

通过蓝宝石衬底的单面研磨试验研究,分析了W14和W3.5的B₄C磨粒研磨后蓝宝石表面的微观形貌和宏观形貌,W14的B₄C磨粒加工后蓝宝石表面微观裂纹密集且交错分布,体现了以滚轧和挤压为主的材料脆性去除作用,相同条件下,W3.5的B₄C磨粒加工的蓝宝石表面划痕均匀,表面无微观裂纹,实现了以切削为主的材料延性去除形式。测试分析结果表明：磨粒粒径的选择对蓝宝石的研磨表面状态具有重要影响,其选择准则除考虑要达到的粗糙度等级之外,还必须同时考虑与研磨盘的嵌入作用及其对加工表面状态的影响;W3.5的B₄C磨粒研磨加工后的蓝宝石表面宏观和微观均匀性良好,表面粗糙度、平面度等符合抛光前道工序的要求。     

Feasibility study of micro-slit EDM machining using pure water

This study addresses micro-slit EDM machining feasibility using pure water as the dielectric fluid. Experimental results revealed that pure water could be used as a dielectric fluid and adopting negative polarity EDM machining could obtain high material removal rate (MRR), low electrode wear, small slit expansion, and little machined burr, compared to positive polarity machining. In comparing kerosene versus pure water, pure water was observed to cause low carbon adherence to the electrode surface. Also discharge energy does not decrease and the discharge processes are not interrupted. Therefore, MRR was higher, and related electrode wear ratio compared to kerosene use was lower. In a continual EDM with multi-slit machining, kerosene will cause carbon element adherence, creating an initially high MRR and electrode wear, with rapid decline. However, pure water will not cause carbon element adherence on the electrode surface, so MRR and electrode wear is always stable in this process.     

A state-of-the-art review of ductile cutting of silicon wafers for semiconductor and microelectronics industries

Silicon is a typical functional material for semiconductor and optical industry. Many hi-tech products like lenses in thermal imaging, solar cells, and some key products of semiconductor industry are made of single crystal silicon. Silicon wafers are used as substrate to build vast majority of semiconductor and microelectronic devices. To meet high surge in demand for microelectronics based products in recent years, the development of rapid and cost efficient processes is inevitable to produce silicon wafers with high-quality surface finish. The current industry uses a sequence of processes such as slicing, edge grinding, finishing, lapping, polishing, back thinning, and dicing. Most of these processes use grinding grains or abrasives for material removal. The mechanism of material removal in these processes is fracture based which imparts subsurface damage when abrasive particles penetrate into the substrate surface. Most of these traditional processes are extremely slow and inefficient for machining wafers in bulk quantity. Moreover, the depth of subsurface damage caused by these processes can be up to few microns and it is too costly and time consuming to remove this damage by heavy chemical–mechanical polishing process. Therefore, semiconductor industry requires some alternative process that is rapid and cost effective for machining silicon wafers. Ductile cutting of silicon wafer has the potential to replace the tradition wafer machining processes efficiently. If implemented effectively in industry, ductile cutting of silicon wafers should reduce the time and cost of wafer machining and consequently improve the productivity of the process. This paper reviews and discusses machining characteristics associated with ductile cutting of silicon wafers. The limitations of traditional wafer fabrication, the driving factors for switching to ductile cutting technology, basic mechanism of ductile cutting, cutting mechanics, cutting forces, surface topography, thermal aspects, and important factors affecting these machining characteristics have been discussed to give a systematic insight into the technology.     

Three-body abrasive wear with small size diamond abrasives

Three-body abrasive wear rate was measured as a function of abrasive size and applied load using molybdenum alloy spheres of diameter 25.4 mm as test specimens. Diamond abrasives in the size range 1–60 μm normally used for metal lapping were tested. Tests were conducted at lap loads ranging from 9.8 to 107.9 N. For a given load it was found that there is a maximum abrasive size beyond which the wear rate will not increase and may even decrease. Several explanations of this critical size effect reported in the literature were evaluated on the basis of physical evidence.Wear rate generally increases linearly with increasing load. However, this did not occur with small abrasives. This deviation from linearity was found to be the result of an unusually effective abrasive wear condition. An explanation of this effect is given.     

陶瓷轴向磨削加工实验分析及砂轮磨损研究

轴向磨削加工是以金刚石小砂轮的端部磨粒作为主切削刃来去除材料,用圆周部分内圆或外圆表面磨粒作为副切削刃对已加工圆柱面进行修磨的一种磨削加工技术。从轴向对工程陶瓷进行外圆或内孔加工时,一次切削的径向磨削深度(即背吃刀量)与进给速度分别可达5～10mm和200mm/min以上,实现了工程陶瓷外圆的高效低成本加工。利用该方法对陶瓷材料制成的发动机精密偶件出油阀套筒进行内孔加工,通过单因素试验,分析了不同参数组合下的砂轮磨损情况及各参数对砂轮磨损的影响,试验表明:砂轮磨损程度随磨削深度的增加而呈非线性增加;为使砂轮磨损最小化,主轴转速和工件转速应匹配,即二者的比值应控制在一定的范围内。     

脉冲磁场辅助磁性复合磨粒化学机械抛光技术及其加工试验研究

提出一种脉冲磁场辅助新型磁性复合磨粒化学机械抛光技术。该技术利用磁性聚合物微球与SiO2磨粒组成的复合磨粒抛光液,在脉冲磁场辅助作用下,实现磨粒尺寸对硬质抛光盘微观形貌依赖性小、磨粒易进入抛光区域、材料去除率较高的抛光。设计了“之”字形的对位式结构电磁铁,模拟计算表明其磁感应强度沿抛光平面分布均匀,磁性微球受到的磁力一致性好。磁性微球在抛光系统中的受力分析表明：磁性微球受磁力作用时有利于复合磨粒从近抛光区进入抛光区,以二体磨损的方式去除加工表面;磁性微球不受磁力作用时,复合磨粒随抛光液的流动而移动,避免大量聚集形成磁链。以表面粗糙度Ra=1.1μm的硬质抛光盘进行硅片抛光试验,施加不同频率和占空比的脉冲磁场前后,硅片的去除率从137nm/min提高到288nm/min,频率5Hz、占空比50%时获得最大值,硅片表面粗糙度由抛光前Ra=405nm减小到Ra=0.641nm。     

Kinematics and trajectory analysis of the fixed abrasive lapping process in machining of interdigitated micro-channels on bipolar plates

The fixed abrasive lapping process is presented to investigate its ability and accuracy in machining of interdigitated micro-channels on bipolar plates that are used in the proton exchange membrane fuel cell. A kinematical equation to describing the relative movement between the fixed abrasive lapping plate and workpiece is developed and used to numerically simulate the trajectories of a single diamond abrasive and fixed diamond abrasives with 17 different arraying forms, respectively. It is shown that the lapping trajectory can be superposed periodically when the rotation ratio is a rational number. By assessing the uniformity of lapping trajectories and opening ratio of the bipolar plate the optimized rotation ratio is obtained which is 1:1, and the best arraying form of the fixed diamond abrasives on the lapping plate has been obtained as well that is the arraying form of C4. Then, a set of fixed abrasive lapping tests were conducted to explore its ability in machining of interdigitated micro-channels on bipolar plates. It is found that larger material removal rate can be achieved by employing bigger lapping pressure and higher rotation speed for both copper and stainless steel samples considered in this study. The maximum cell power density is found to be about 165 mW cm⁻² by testing the performance of a single micro fuel cell with a bipolar plate characterized by interdigitated micro-channels that shows a good cell performance.     

Grinding of aluminium silicon carbide metal matrix composite materials by electrolytic in-process dressing grinding

The grinding cost of metal matrix composite materials is more due to low removal rates and high rates of wear of super abrasive wheels. This electrolytic in-process dressing (ELID) technique uses a metal-bonded grinding wheel that is electrolytically dressed during the grinding process for abrasives that protrude continuously from super abrasive wheels. This research carries out ELID grinding using various current duty ratios and conventional grinding of 10% SiC_p reinforced 2,124 aluminium composite materials. Normal forces and tangential forces are monitored. Surface roughness of the ground surface, Vickers hardness numbers and metal removal rate (MRR) are measured. The results show that the cutting forces in the ELID grinding are unstable throughout the grinding process due to the breakage of an insulating layer formed on the surface of grinding wheel and are less than conventional grinding forces. A smoother surface can be obtained at high current duty ratio in ELID grinding. The micro-hardness is reduced at high current duty ratio. In ELID, the MRR increases at high current duty ratio. The results of this investigation are presented in this paper.     

Ultrasonic slot machining of a silicon carbide matrix composite

Rotary ultrasonic slot machining (RUSM) of ceramic matrix composites is explored. A comparison is made between RUSM and conventional diamond grinding by studying the effects of material removal rate (MRR) on process forces, tool wear and surface roughness. It was shown that RUSM leads to a significant decrease in process cutting forces and tool wear in comparison to the conventional machining process. Furthermore, the influences of diamond tool characteristics on surface roughness and tool wear are also ascertained.     

Effect of wafer size on material removal rate and its distribution in chemical mechanical polishing of silicon dioxide film

Chemical mechanical polishing (CMP) is a semiconductor fabrication process. In this process, wafer surfaces are smoothed and planarized using a hybrid removal mechanism, which consists of a chemical reaction and mechanical removal. In this study, the effects of wafer size on the material removal rate (MRR) and its uniformity in the CMP process were investigated using experiments and a mathematical model proposed in our previous research; this model was used to understand the MRR and its uniformity with respect to wafer size. Under constant process conditions, the MRR of a silicon dioxide (SiO₂) film increased slightly along with an increase in wafer size. The increase in MRR may be attributed to the acceleration of the chemical reaction due to a rise in process temperature. Based on the results obtained, the k and α values in the mathematical model are useful parameters for understanding the effect of wafer size on the MRR and its distribution under a uniform, relative velocity. These parameters can facilitate the prediction of CMP results and the effective design of a CMP machine.     

Experimental investigation and performance analysis of cemented carbide inserts of different geometries using Taguchi based grey relational analysis

In this work, effect of machining parameters cutting speed, feed rate and depth of cut, geometrical parameters cutting insert shape, relief angle and nose radius were investigated and optimized using Taguchi based grey relational analysis. 18 ISO designated uncoated cemented carbide inserts of different geometries were used to turn practically used automotive axles to study the influence of variation in carbide inserts geometry. Performance measures viz., flank wear, surface roughness and material removal rate (MRR) were optimized using grey relational grade, based on the experiments designed using Taguchi’s Design of Experiments (DoE). A weighted grey relational grade is calculated to minimize flank wear and surface roughness and to maximize MRR. Analysis of variance shows that cutting insert shape is the prominent parameter followed by feed rate and depth of cut that contributes towards output responses. An experiment conducted with identified optimum condition shows a lower flank wear and surface roughness with higher MRR. The confirmation results obtained are confirmed by calculating confidence interval, which lies within the width of the interval.     

蜂窝状结构半固结磨料研磨盘的制备及应用

针对传统半固结研磨盘由于盘面较软使得加工衬底面形精度难以保证的问题,提出一种蜂窝状结构的半固结磨料研磨盘的设计与制备方法。该研磨盘采用环氧树脂蜂窝结构作为支撑“骨架”,减小研磨盘的变形,以保证研磨衬底的面形精度,同时采用含有金刚石磨粒的凝胶体作为半固结研磨介质实现对衬底的研磨加工,获得了较好的衬底表面质量。基于该原理制备了一套新型研磨盘,并用于蓝宝石衬底的双面研磨加工。试验结果表明,研磨后衬底表面粗糙度较小,表面划痕和裂纹少,能够获得较好的表面质量;相应地,研磨后蓝宝石衬底的面形精度不仅没有变差,反而得到很大的改善,研磨后衬底的翘曲度、弯曲度和总厚度偏差均大幅减小。另外,研磨效率也相对较高,材料去除率可达0.3～0.4 μm/min。试验结果证明了该新型结构研磨盘不仅可以获得较好的表面质量和较高的研磨效率,同时还可提高衬底的面形精度,可用于面形精度要求较高的薄片衬底零件的精密研磨加工。     

Investigation and optimization of the internal cylindrical surface lapping process of 440c steel

A new lapping method is proposed for internal cylindrical surfaces finishing. Regression analysis and artificial neural network (ANN) were used for modeling this lapping process and predicting the effects of parameters of rotational speed of the lapping tool (ω), the length of the lapping tool (L) and difference in external diameter of the lapping tool and internal diameter of the workpiece (D) on the material removal rate (MRR), out-of-cylindricity (C) and surface roughness (Ra) of the lapped holes. Comparison of the results of the regression and ANN models with the values obtained from the experiments indicates that the MRR, Ra and C are more accurately predicted using ANN models. MRR, Ra and C of the lapped holes have been optimized using genetic algorithm (GA) and particle swarm optimization (PSO) algorithm. The results show that the highest MRR, which is equal to 2029 μg/min, has been achieved at ω of 400 rpm, D of 0.1 mm and L of 45 mm. The lowest Ra of the lapped hole is 64 nm which has been obtained at ω of 100 rpm, D of 0.1 mm and L of 20.82 mm. The minimum C of the lapped hole is 3 μm, which was obtained at ω of 212 rpm, D of 0.1 mm and L of 28.3 mm. The most important problem in the lapping process is the low MRR which causes increased cost and production time. Therefore, in the lapping process, the selection of conditions, that in addition to the production of pieces with geometric accuracy and surface roughness needing a high MRR, is very important. In this study, MRR, Ra and cylindricity of the lapped holes was optimized using multi-objective PSO (MOPSO) algorithm and non-dominated sorting genetic algorithm II (NSGA II), and the Pareto optimal solutions were obtained. Comparison of the results obtained from NSGA II and MOPSO shows that both of these algorithms can achieve optimal Pareto front with the same accuracy, but the time required to reach the MOPSO algorithm to the optimal Pareto front is 25 % less than the NSGA II.

     

光子晶体光纤端面研磨损伤的分析

对光子晶体光纤的端面研磨过程进行研究,讨论了光子晶体光纤端面研磨损伤的特点。针对光子晶体光纤的结构特点,应用有限元法建立了数值仿真模型。通过单一磨粒切削孔壁的仿真实验,分析了不同切削深度下裂纹损伤的产生情况以及不同磨粒直径对光纤孔壁结构造成的损伤。最后通过实际研磨实验验证了分析结果。结果表明:有限元法能够很好地模拟光子晶体光纤的端面研磨过程;研磨过程中,相对于非孔洞区域,孔壁边缘更容易出现损伤,呈现出沿圆周分布的崩塌区域;边缘崩塌区域尺寸随磨粒直径的增加而增加。实验用光子晶体光纤孔壁边缘无崩塌的最大切削深度低于普通光纤脆塑转变的临界切削深度,使用0.02μm的砂纸进行抛光可以有效地避免对光子晶体光纤孔壁造成损伤。     

固结磨料研磨K9玻璃表面粗糙度模型

表面粗糙度模型是研磨过程设计和工艺参数选择的重要依据,K9玻璃是应用最广泛的光学材料之一。建立研磨K9玻璃表面粗糙度模型有利于提高加工效率、节约生产成本。简化固结磨料研磨过程,基于研磨垫表面微结构,计算研磨过程中参与研磨的有效磨粒数和单颗磨粒切入工件深度,利用研磨过程中受力平衡,建立固结磨料研磨K9玻璃表面粗糙度模型。采用不同磨粒粒径和不同磨料浓度的固结磨料研磨垫以及不同压力研磨K9玻璃验证表面粗糙度模型。结果表明：固结磨料研磨K9玻璃的表面粗糙度与磨粒粒径、研磨压力1/3次方成正比,与研磨垫浓度2/9次方成反比。表面粗糙度理论值与试验值随研磨压力、磨粒粒径和研磨垫浓度的变化趋势吻合。利用该模型能够成功预测固结磨料研磨K9玻璃表面粗糙度,指导研磨过程设计及加工过程中研磨垫和工艺参数的选择,可靠性高。