Demonstration of 1789 V, 6.68 m/spl Omega/ /spl middot/ cm/sup 2/ 4H-SiC merged-PiN-Schottky diodes

The design, fabrication and characterisation of a high performance 4H-SiC diode of 1789 V-6.6 A with a low differential specific-on resistance (R/sub SP/spl I.bar/ON/) of 6.68 m/spl Omega/ /spl middot/ cm/sup 2/, based on a 10.3 /spl mu/m 4H-SiC blocking layer doped to 6.6/spl times/10/sup 15/ cm/sup -3/, is reported. The corresponding figure-of-merit of V/sub B//sup 2//R/sub SP/spl I.bar/ON/ for this diode is 479 MW/cm/sup 2/, which substantially surpasses previous records for all other MPS diodes.     

Stimulated emission in Er:Ti:LiNbO/sub 3/ channel waveguides close to 1.53 mu m transition

Fabrication and characterisation of Er:Ti:LiNbO/sub 3/ channel waveguides is reported. A lifetime of 2.4+or-0.2 ms has been measured for the /sup 4/I/sub 13/2/ level. In a pump and probe experiment using a high power InGaAsP laser and a tunable DBR laser, a signal increase of 0.75 dB for a transmitted pump power of 4.8 mW was demonstrated.<>     

Full characterization of packaged Er-Yb-codoped phosphate glass waveguides

We present a procedure for the characterization of packaged Er-Yb-codoped phosphate glass waveguides. The procedure is based on precise measurements of the output optical powers when the waveguide is diode-laser pumped at 980 nm. The dependence of these optical powers on the input pump power is then fitted to the results from a numerical model that describes in detail the propagation of the optical powers inside the waveguide. The best fit is obtained for the following parameters: the signal wavelength scattering losses are /spl alpha/(1534)=8.3/spl times/10/sup -2/ dB/cm, the Yb/sup 3+/ absorption and emission cross sections (/spl ap/980 nm) are 5.4/spl times/10/sup -25/ m/sup 2/ and 7.0/spl times/10/sup -25/ m/sup 2/, the Er/sup 3+/ absorption and emission cross sections (/spl ap/980 nm) are 1.6/spl times/10/sup -25/ m/sup 2/ and 1.2/spl times/10/sup -25/ m/sup 2/, the Yb/sup 3+/--Er/sup 3+/ energy-transfer coefficient is 1.8/spl times/10/sup -23/ m/sup 3//s and the cooperative-upconversion coefficient is 8/spl times/10/sup -25/ m/sup 3//s. An approximate method is introduced that allows the determination of the absorption and emission cross section distributions for the erbium /sup 4/I/sub 13/2//spl hArr//sup 4/I/sub 15/2/ transition from the amplified spontaneous emission power spectrum.     

On the Mode and Square Correspondence Between Circular Multimode Tapered Waveguides

In an axially straight multimode circular waveguide taper excited with a pure TE/sup /spl circle// /sub 11/ dominant mode, the first and only converted mode at and near cutoff is the TM/sup/spl circle// /sub 11/ mode. It is shown that in an axially straight multimode square waveguide taper excited with a pure TE/sup/spl square// /sub 10/ dominant mode, the TM/sup/spl square// /sub 12/ mode corresponding to the TM/sup/spl circle// /sub 11/ mode in circular case is not the only first converted mode at and near cutoff. The overall behavior or coupling mechanism of waveguides is similar whether the waveguide is rectangular, square, circular, or elliptical: i.e., the overall coupling coefficient at cutoff of a converted mode or modes approaches an ininfinity of the order 0/sup -1/4/.     

Efficient amplification using the /sup 4/F/sub 3/2//spl rarr//sup 4/I/sub 9/2/ transition in Nd-doped silica fiber

Amplification characteristics of the three-level /sup 4/F/sub 3/2//spl rarr//sup 4/I/sub 9/2/ transition in Nd-doped silica glass fiber are investigated under strong signal saturation and high pump power (150 mW). Aluminum codoped Nd-silica fibers exhibit strong superfluorescent behavior in the four-level /sup 4/F/sub 3/2//spl rarr//sup 4/I/sub 11/2/ transition which limits the optical conversion efficiency into the three-level transition. Ge-doped silica fibers do not exhibit this limitation and can efficiently amplify in the three-level transition with current laser-diode pump technology.     

Radiation from Bends in Dielectric Rod Transmission Lines

The radiation from the fundamental mode propagating around curved dielectric rod transmission lines is investigated experimentally with microwave frequencies. Three methods are used to determine the attenuation by radiation: measuring the insertion loss of bends, measuring the Q-factor of ring resonators, and measuring the Q-factor of sections of curved dielectric rod transmission lines terminated by large reflecting plates. The attenuation is found to depend mainly on the combination R lambda/sub 0//sup 2/ / r/sub 0//sup 3/ where R is the radius of curvature, lambda/sub 0/ the free space wavelength and r/sub 0/ a measure of the transverse field extent of the HE/sub 11/ mode. The experimental results are compared with theoretical predictions of other authors. The measured values of the attenuation constant are found to be smaller than the theoretical values. The distribution of the electromagnetic field near bends is recorded using a semiautomatic field plotter. From the field pictures, it can be concluded that the curved dielectric waveguide radiates tangentially from the outer side. The results presented will also be useful for understanding the mechanism of radiation from bent optical waveguides.     

Evidence of enhanced hypersensitive transition in erbium-doped fibers with different Al/sub 2/O/sub 3/ content

Precise spectroscopic absorption measurements of erbium-doped aluminosilicate fibers with different Al/sub 2/O/sub 3/ content were performed with the Judd-Ofelt analysis. From the Judd-Ofelt analysis, the /spl Omega//sub 2/ parameters of Er/sup 3+/ ions in these fibers were found to be about three times as large as those in aluminosilicate bulk glasses. The enhancement of the /spl Omega//sub 2/ parameters led to much stronger line strength of hypersensitive transitions in a fiber form than in a bulk glass form. This indicates that the distortion of the ligand field around the Er/sup 3+/ ions are more enhanced in a fiber form than in a bulk glass form. Furthermore, the /spl Omega//sub 6/ and the /spl Omega//sub 2/ parameters increased with an increase of q content up to 20 000 ppm. This Al/sub 2/O/sub 3/-content dependence of the /spl Omega//sub 6/ parameter was consistent with that of the line strength and the spontaneous emission probabilities of the transition corresponding to the /sup 4/I/sub 13/2//spl rarr//sup 4/I/sub 15/2/.     

Leaky Waveguide: TE/sup cir//sub 01/ Circular Waveguide Periodic Array of Circular Apertures

This paper describes propagation characteristics of periodic leaky waveguides for helix waveguides and solid metal waveguides carrying a TE/sup cir//sub 01/ mode based primarily on experimental studies. For low-loss leaky waveguides, this type has not been considered feasible, because of the critical problem encountered in mode conversion-reconversion at the circular apertures. Additional loss due to the periodic array of the circular apertures and TE/sup cir//sub 01/ loss/frequency characteristics of the periodic leaky waveguide using helix waveguides and solid metal waveguides are measured by the shuffle-pulse method in the X-band. The periodic leaky waveguides using solid metal waveguides are seen to be acceptable for practical use as a low-loss leaky waveguide system, according to these measurements.     

Mode Propagation in a Nonuniform Cylindrical Medium (Correspondence)

A simplified form of the coupling coefficient C(/spl beta//sub p/, /spl beta//sub q/) resulting from a coupled mode theory analysis of wave propagation in a nonuniform medium is derived. It is found for most situations of interest that C(/spl beta//sub p/, /spl beta//sub q/) is proportional to 1/(/spl beta//sub p/-/spl beta//sub q/) and the power transfer between two modes is proportional to 1/(/spl beta//sub p/ - /spl beta//sub q/)/sup 4/. /spl beta//sub p/ and /spl beta//sub q/ are the two different modal propagation constants. For a dielectric rod C(/spl beta//sub p/, /spl beta//sub q/) is a simple line integral around the rod boundary. Approximate forms are presented for optical waveguides.     

1677 V, 5.7 m/spl Omega//spl middot/cm/sup 2/ 4H-SiC BJTs

This letter reports the development of a high-performance power 4H-SiC bipolar junction transistor (BJT) with, simultaneously, a high blocking voltage and a low specific on-resistance (R/spl I.bar//sub ON/). A single BJT cell with an active area of 0.61 mm/sup 2/ achieves an open base collector-to-emitter blocking voltage (V/sub ceo/) of 1677 V and conducts up to 3.2 A at a forward voltage drop of V/sub CE/=3.0 V, corresponding to a low R/spl I.bar//sub ON/ of 5.7 m/spl Omega//spl middot/cm/sup 2/ up to Jc=525 A/cm/sup 2/ and a record high value of V/sub B//sup 2//R/sub SP/spl I.bar/ON/ of 493 MW/cm/sup 2/.     

The inequalities of quantum information theory

Let /spl rho/ denote the density matrix of a quantum state having n parts 1, ..., n. For I/spl sube/N={1, ..., n}, let /spl rho//sub I/=Tr/sub N/spl bsol/I/(/spl rho/) denote the density matrix of the state comprising those parts i such that i/spl isin/I, and let S(/spl rho//sub I/) denote the von Neumann (1927) entropy of the state /spl rho//sub I/. The collection of /spl nu/=2/sup n/ numbers {S(/spl rho//sub I/)}/sub I/spl sube/N/ may be regarded as a point, called the allocation of entropy for /spl rho/, in the vector space R/sup /spl nu//. Let A/sub n/ denote the set of points in R/sup /spl nu// that are allocations of entropy for n-part quantum states. We show that A~/sub n/~ (the topological closure of A/sub n/) is a closed convex cone in R/sup /spl nu//. This implies that the approximate achievability of a point as an allocation of entropy is determined by the linear inequalities that it satisfies. Lieb and Ruskai (1973) have established a number of inequalities for multipartite quantum states (strong subadditivity and weak monotonicity). We give a finite set of instances of these inequalities that is complete (in the sense that any valid linear inequality for allocations of entropy can be deduced from them by taking positive linear combinations) and independent (in the sense that none of them can be deduced from the others by taking positive linear combinations). Let B/sub n/ denote the polyhedral cone in R/sup /spl nu// determined by these inequalities. We show that A~/sub n/~=B/sub n/ for n/spl les/3. The status of this equality is open for n/spl ges/4. We also consider a symmetric version of this situation, in which S(/spl rho//sub I/) depends on I only through the number i=/spl ne/I of indexes in I and can thus be denoted S(/spl rho//sub i/). In this case, we give for each n a finite complete and independent set of inequalities governing the symmetric allocations of entropy {S(/spl rho//sub i/)}/sub 0/spl les/i/spl les/n/ in R/sup n+1/.     

Increase in photosensitivity in silica-based optical waveguides on silicon

An increase in the photoinduced refractive-index change Delta n in GeO/sub 2/-doped silica optical waveguides on silicon is described. The increase is attained by the consolidation of a core film in a reducing atmosphere. A maximum Delta n of 3.9*10/sup -4/ is obtained for the TE mode by UV laser irradiation at 248 nm. This is four times larger than that in conventional waveguides.<>     

Path to the measurement of positive gain on the 1315-nm transition of atomic iodine pumped by O/sub 2/(a/sup 1//spl Delta/) produced in an electric discharge

Laser action at 1315 nm on the I(/sup 2/P/sub 1/2/)/spl rarr/I(/sup 2/P/sub 3/2/) transition of atomic iodine is conventionally obtained by a near-resonant energy transfer from O/sub 2/(a/sup 1//spl Delta/) which is produced using wet-solution chemistry. The system difficulties of chemically producing O/sub 2/(a/sup 1//spl Delta/) have motivated investigations into gas phase methods to produce O/sub 2/(a/sup 1//spl Delta/) using low-pressure electric discharges. We report on the path that led to the measurement of positive gain on the 1315-nm transition of atomic iodine where the O/sub 2/(a/sup 1//spl Delta/) was produced in a flowing electric discharge. Atomic oxygen was found to play both positive and deleterious roles in this system, and as such the excess atomic oxygen was scavenged by NO/sub 2/ to minimize the deleterious effects. The discharge production of O/sub 2/(a/sup 1//spl Delta/) was enhanced by the addition of a small proportion of NO to lower the ionization threshold of the gas mixture. The electric discharge was upstream of a continuously flowing supersonic cavity, which was employed to lower the temperature of the flow and shift the equilibrium of atomic iodine more in favor of the I(/sup 2/P/sub 1/2/) state. A tunable diode laser system capable of scanning the entire line shape of the (3,4) hyperfine transition of iodine provided the gain measurements.     

Performance of Ar/sup +/-milled Ti:sapphire rib waveguides as single transverse-mode broadband fluorescence sources

Rib waveguides have been fabricated in pulsed-laser-deposited Ti:sapphire layers using photolithographic patterning and subsequent Ar/sup +/-beam milling. Fluorescence output powers up to 300 /spl mu/W have been observed from the ribs following excitation by a 3-W multiline argon laser. Mode intensity profiles show high optical confinement and the measured beam propagation factors M/sub x//sup 2/ and M/sub y//sup 2/ of 1.12 and 1.16, respectively, indicate single transverse-mode fluorescence emission. Loss measurements using the self-pumped phase conjugation technique have yielded comparable values (1.7 dB/cm) for the ribs and the unstructured planar waveguide counterparts. The combination of optimum modal properties and strong optical confinement, together with sufficient levels of fluorescence output, make the single-moded Ti:sapphire rib waveguides a very interesting candidate as a fluorescence source for optical coherence tomography applications.     

A comparison of low-frequency noise characteristics and noise sources in NPN and PNP InP-based heterojunction bipolar transistors

Low-frequency noise characteristics of NPN and PNP InP-based heterojunction bipolar transistors (HBTs) were investigated. NPN HBTs showed a lower base noise current level (3.85 /spl times/ 10/sup -17/ A/sup 2//Hz) than PNP HBTs (3.10 /spl times/ 10/sup -16/ A/sup 2//Hz), but higher collector noise current level (7.16 /spl times/ 10/sup -16/ A/sup 2//Hz) than PNP HBTs (1.48 /spl times/ 10/sup -16/ A/sup 2//Hz) at 10 Hz under I/sub C/=1 mA, V/sub C/=1 V. The NPN devices showed a weak dependence I/sub C//sup 0.77/ of the collector noise current, and a dependence I/sub B//sup 1.18/ of the base noise current, while the PNP devices showed dependences I/sub C//sup 1.92/ and I/sub B//sup 1.54/, respectively. The dominant noise sources and relative intrinsic noise strength were found in both NPN and PNP InP-based HBTs by comparing the noise spectral density with and without the emitter feedback resistor. Equivalent circuit models were employed and intrinsic noise sources were extracted. The high base noise current of PNP HBTs could be attributed to the exposed emitter periphery and higher electron surface recombination velocity in P-type InP materials, while the relatively high collector noise current of NPN HBTs may be due to the noise source originating from generation-recombination process in the bulk material between the emitter and the collector.     

Neodymium-doped tantalum pentoxide waveguide lasers

The fabrication, spectroscopic properties, and laser performance of Nd/sup 3+/-doped Ta/sub 2/O/sub 5/ channel waveguide lasers are described. Lasing is obtained at both 1.066 and 1.375 /spl mu/m with threshold pump powers as low as 2.7 mW. The rib waveguides are reactive-ion-etched into Nd:Ta/sub 2/O/sub 5/ layers formed by reactive magnetron sputtering. These high-index low-loss rare-earth-doped waveguides are fabricated on silicon substrates and offer the potential for integration with photonic crystal structures for compact optical circuits.     

Cyclic codes over GR(4/sup m/) which are also cyclic over /spl Zopf//sub 4/

Let GR(4/sup m/) be the Galois ring of characteristic 4 and cardinality 4/sup m/, and /spl alpha/_={/spl alpha//sub 0/,/spl alpha//sub 1/,...,/spl alpha//sub m-1/} be a basis of GR(4/sup m/) over /spl Zopf//sub 4/ when we regard GR(4/sup m/) as a free /spl Zopf//sub 4/-module of rank m. Define the map d/sub /spl alpha/_/ from GR(4/sup m/)[z]/(z/sup n/-1) into /spl Zopf//sub 4/[z]/(z/sup mn/-1) by d/spl alpha/_(a(z))=/spl Sigma//sub i=0//sup m-1//spl Sigma//sub j=0//sup n-1/a/sub ij/z/sup mj+i/ where a(z)=/spl Sigma//sub j=0//sup n-1/a/sub j/z/sup j/ and a/sub j/=/spl Sigma//sub i=0//sup m-1/a/sub ij//spl alpha//sub i/, a/sub ij//spl isin//spl Zopf//sub 4/. Then, for any linear code C of length n over GR(4/sup m/), its image d/sub /spl alpha/_/(C) is a /spl Zopf//sub 4/-linear code of length mn. In this article, for n and m being odd integers, it is determined all pairs (/spl alpha/_,C) such that d/sub /spl alpha/_/(C) is /spl Zopf//sub 4/-cyclic, where /spl alpha/_ is a basis of GR(4/sup m/) over /spl Zopf//sub 4/, and C is a cyclic code of length n over GR(4/sup m/).     

Performance improvement of scaled-down top-contact OTFTs by two-step-deposition of pentacene

When scaling down to the channel length (L/sub c/) of 1.8 /spl mu/m using a membrane shadow mask, top-contact pentacene thin-film transistors (TFTs) show that grain size dependency on the anomalous leakage current becomes conspicuous as L/sub c/ is comparable to the grain size. For scaled-down OTFTs with large and small grain, the obvious difference of off-current in the depletion regime can be attributed to various reasons such as pentacene conductivity, parasitic resistance, locally ill-defined source/drain edge, and Au interdiffusion. To improve mobility as well as I/sub on//I/sub off/ ratio for scaled-down OTFTs, two-step-deposition (TSD) technique that enables us to control the channel conductivity in the depletion and accumulation regime as well as to improve the film continuity was proposed. To the best of our knowledge, the I/sub on//I/sub off/ ratio of 10/sup 7/ and the mobility of 0.20 cm/sup 2//V/spl middot/s for OTFTs with L/sub c/ of 1.8 /spl mu/m deposited by using the TSD technique was one of the best results in the literature.     

4H-SiC power bipolar junction transistor with a very low specific ON-resistance of 2.9 m/spl Omega//spl middot/cm/sup 2/

This letter reports a newly achieved best result on the specific ON-resistance (R/sub SP/spl I.bar/ON/) of power 4H-SiC bipolar junction transistors (BJTs). A 4H-SiC BJT based on a 12-/spl mu/m drift layer shows a record-low specific-ON resistance of only 2.9 m/spl Omega//spl middot/cm/sup 2/, with an open-base collector-to-emitter blocking voltage (V/sub ceo/) of 757 V, and a current gain of 18.8. The active area of this 4H-SiC BJT is 0.61 mm/sup 2/, and it has a fully interdigitated design. This high-performance 4H-SiC BJT conducts up to 5.24 A at a forward voltage drop of V/sub CE/=2.5 V, corresponding to a low R/sub SP-ON/ of 2.9 m/spl Omega//spl middot/cm/sup 2/ up to J/sub c/=859 A/cm/sup 2/. This is the lowest specific ON-resistance ever reported for high-power 4H-SiC BJTs.     

Low-Temperature Materials and Thin Film Transistors for Flexible Electronics

This paper addresses the low-temperature deposition processes and electronic properties of silicon based thin film semiconductors and dielectrics to enable the fabrication of mechanically flexible electronic devices on plastic substrates. Device quality amorphous hydrogenated silicon (a-Si:H), nanocrystalline silicon (nc-Si), and amorphous silicon nitride (a-SiN/sub x/) films and thin film transistors (TFTs) were made using existing industrial plasma deposition equipment at the process temperatures as low as 75/spl deg/C and 120/spl deg/C. The a-Si:H TFTs fabricated at 120/spl deg/C demonstrate performance similar to their high-temperature counterparts, including the field effect mobility (/spl mu//sub FE/) of 0.8 cm/sup 2/V/sup -1/s/sup -1/, the threshold voltage (V/sub T/) of 4.5 V, and the subthreshold slope of 0.5 V/dec, and can be used in active matrix (AM) displays including organic light emitting diode (OLED) displays. The a-Si:H TFTs fabricated at 75/spl deg/C exhibit /spl mu//sub FE/ of 0.6 cm/sup 2/V/sup -1/s/sup -1/, and V/sub T/ of 4 V. It is shown that further improvement in TFT performance can be achieved by using n/sup +/ nc-Si contact layers and plasma treatments of the interface between the gate dielectric and the channel layer. The results demonstrate that with appropriate process optimization, the large area thin film Si technology suits well the fabrication of electronic devices on low-cost plastic substrates.