微机械惯性器件

微电子加工技术和振动惯性技术相结合使惯性仪表技术发生了重大变革，惯性器件的概念已从宏观领域发展到微观世界，人们已能象生产集成电路那样来生产惯性器件，这类惯性器件被称为微机械惯性器件。文章叙述了微机械惯性器件的发展状况、技术趋势及市场预测。     

单片集成MEMS电容式压力传感器接口电路设计

介绍了一种单片集成电容式压力传感器接口电路,该电路基于电容-频率转化原理,并通过差频消除了温度变化和工艺波动对电路性能的影响.使用Pspice对接12电路的误差特性进行了分析,并依据仿真结果确定了电路的相关参数.最后给出电路的测试结果,测试结果与仿真结果一致,在80～110 kPa量程内,接口电路的分辨率为3.77 Hz/hPa.     

单片集成MEMS电容式压力传感器接口电路设计

介绍了一种单片集成电容式压力传感器接口电路，该电路基于电容一频率转化原理，并通过差频消除了温度变化和工艺波动对电路性能的影响。使用Pspice对接口电路的误差特性进行了分析，并依据仿真结果确定了电路的相关参数。最后给出电路的测试结果，测试结果与仿真结果一致，在80～110kPa量程内，接口电路的分辨率为3．77Hz／hPa。     

单片集成MEMS电容式压力传感器接口电路设计

介绍了一种单片集成电容式压力传感器接口电路,该电路基于电容-频率转化原理,并通过差频消除了温度变化和工艺波动对电路性能的影响。使用Pspice对接口电路的误差特性进行了分析,并依据仿真结果确定了电路的相关参数。最后给出电路的测试结果,测试结果与仿真结果一致,在80~110kPa量程内,接口电路的分辨率为3.77Hz/hPa。     

硅基微机械加工技术

阐明了微机电系统（MEMS）的学科内涵,概述了体微机械加工技术、表面微机械加工技术和复合微机械加工技术的特点,运用具体实例对三种硅基微机械加工技术的基本制作工艺过程进行了讨论。     

MEMS光栅光调制器与CMOS驱动单片集成的研究

为了消除光栅光调制器阵列的交叉效应,提出利用post-CMOS工艺将光栅光调制器与CMOS驱动单片集成.介绍了单片集成器件的工作原理,详细分析了单片集成器件的关键参数.通过分析表明,在满足调制器响应频率条件下,通过改变悬臂梁的各个参数可以减小调制器的弹性系数,从而降低光栅光调制器的工作电压;在满足开关速度的条件下,较大存储电容具有更好的电压保持特性.利用中芯国际提供的0.18μm工艺设计包完成该单片集成器件的物理版图设计和仿真.最后,通过实验测得该器件的上升沿和下降沿时间分别为:36.8ns和36.4ns,且经过16.73ms的保持时间后压降为2.1v.实验结果与仿真结果具有较好的一致性,结果表明:加工的单片集成器件具有较快的开关速度和较好的电压保持特性,能够满足设计要求.     

硅光子器件及其集成技术的研究

主要探讨了偏振分集光路、可调光衰减器、波导耦合型锗光电探测器等硅光器件的研究进展,分析了其结构及技术参数,随后探讨了VOA-PD单片集成技术以及VMUX单片集成技术两种硅基单片集成技术,指出硅光子器件的性能指标已经能满足现代光纤通信系统的要求。     

基于(111)硅单片集成三轴加速度计的工艺研究北大核心

介绍了一种新型单片集成电容式三轴微加速度计的加工方法,该方法采用非绝缘体上硅(SOI)的单硅片单面加工技术,易于与IC工艺兼容,而且成本低廉,成品率高,适用于批量生产,可替代传统的SOI工艺。该方法主要利用硅深度反应离子刻蚀(DRIE)技术结合普通(111)单晶硅片内部可选择性横向自停止腐蚀技术制作并释放得到悬浮可动的敏感结构。此外,创新的锚点设计不仅使检测电极之间相互电学隔离,而且便于引线键合与封装。最后基于开环接口电路对加工制造的三轴加速度计进行了测试,验证了该工艺的可行性。     

应用于大功率激光二极管列阵的单片集成微通道制冷热沉

介绍了一种应用于大功率激光二极管列阵的新型单片集成微通道制冷热沉.这种热沉已制造并经过测试.10叠层的激光二极管列阵的热阻为0.121℃/W.相邻两个激光条的间距是1.17mm.在20%高占空比条件下,波长为808nm左右,峰值功率可以达到611W.     

基于GaN FET的LED微显示单片集成技术研究进展

发光二极管(LED)微显示技术由于其潜在应用而倍受关注.与主流的基于硅基驱动器的LED微显示技术不同,采用GaN场效应晶体管(FET)驱动的LED微显示技术制作的器件具有可靠性高和制作工艺简单等优势.总结了各种GaN FET驱动LED微显示的器件结构及性能,这些器件结构包括:直接利用LED外延结构制作FET驱动微型LED发光像素的横向集成结构、HEMT驱动微型LED发光像素的横向叠层结构、纳米线GaN FET驱动LED发光像素的垂直叠层结构.对基于GaN FET驱动的LED微显示技术的进展进行了综述.对GaN FET驱动的LED微显示技术的应用前景和研究方向进行了展望.     

Monolithic integration of 5 V CMOS and high-voltage devices

A fully CMOS-compatible HVIC technology has been developed that features 5 V high-performance digital CMOS with high-voltage devices of more than 400 V. This technology uses only one or two masks in addition to standard p-well CMOS technology. Design optimization has been achieved to meet the needs of both CMOS and high-voltage devices. A large number of different devices are available in this technology, including bipolar transistors, lateral MOS gate power devices, and high-voltage p-channel power devices     

Monolithic integration of optoelectronic devices with reactivematching networks for microwave applications

Microwave impedance matching networks have been, for the first time, monolithically integrated with GaInAs p-i-n photodiodes and GaInAsP buried ridge stripe structure lasers (λ=1.3 μm), both on a semi-insulating InP substrate. The microwave power transfer optical links were compared using matched and unmatched devices. Compared to an unmatched link, an improvement of 11.4 dB at 5.6 GHz (600 MHz bandwidth) is obtained for the totally matched one; this result corresponds quite well to the theoretical prediction (12 dB at 6 GHz)     

Monolithic integration of Giant Magnetoresistance (GMR) devices onto standard processed CMOS dies

Giant Magnetoresistance (GMR) based technology is nowadays the preferred option for low magnetic fields sensing in disciplines such as biotechnology or microelectronics. Their compatibility with standard CMOS processes is currently investigated as a key point for the development of novel applications, requiring compact electronic readout. In this paper, such compatibility has been experimentally studied with two particular non-dedicated CMOS standards: 0.35 μm from AMS (Austria MicroSystems) and 2.5 μm from CNM (Centre Nacional de Microelectrònica, Barcelona) as representative examples. GMR test devices have been designed and fabricated onto processed chips from both technologies. In order to evaluate so obtained devices, an extended characterization has been carried out including DC magnetic measurements and noise analysis. Moreover, a 2D-FEM (Finite Element Method) model, including the dependence of the GMR device resistance with the magnetic field, has been also developed and simulated. Its potential use as electric current sensors at the integrated circuit level has also been demonstrated.     

Monolithic optoelectronic integration: A new component technology for lightwave communications

We discuss recent advances in the field of optoelectronic device integration. Several problems and advantages associated with integration are illustrated by discussing in detail three device types which are currently undergoing intensive investigation: integated laser transmitters, integrated p-i-n photodetector receivers, and arrays of individually addressable detectors and light emitters. Devices fabricated using either GaAS or InP-based material systems with application at wavelength of 0.82-0.87 µm and 1.3-1.55µm, respectively, are considered. It is concluded that the pursuit of optoelectronic integration will lead to an increase in device functionality, an improvement in performance, and a reduction in cost of the integrated device as compared with its hybrid counterpart.     

Monolithic optoelectronic integration: A new component technology for lightwave communications

We discuss recent advances in the field of optoelectronic device integration. Several problems and advantages associated with integration are illustrated by discussing in detail three device types which are currently undergoing intensive investigation: integrated laser transmitters, integrated p-i-n photodetector receivers, and arrays of individually addressable detectors and light emitters. Devices fabricated using either GaAs or InP-based material systems with application at wavelength of0.82-0.87 mum and1.3-1.55 mum, respectively, are considered. It is concluded that the pursuit of optoelectronic integration will lead to an increase in device functionality, an improvement in performance, and a reduction in cost of the integrated device as compared with its hybrid counterpart.     

Monolithic integrated active sensors: a combination technology for thin-film and semiconductor devices

To improve the performance of sensors it is necessary to shrink their physical dimensions. Small sensors can be realized by means of thin-film processes and microlithography. But small sensor dimension implies small output signals. If silicon is used as the substrate for the thin-film device, a possible way out is the monolithic integration of sensor and preamplifying electronics. In this paper we discuss this possibility with respect to an integratedactive thin-film head for high density digital recording. Some important points will beProblems arising from the combination of thin-film and standard semiconductor processesA suitable process flow for the monolithic integrationDemands on the electronics for amplifying low-level high-bandwidth signals delivered from thin-film devices with low impedance.Finally we shall present some results achieved with the active thin-film head. The combination technology presented here allows the development of a new generation of smart sensors.     

Monolithic integration of a 5.3 GHz regenerative frequency divider using a standard bipolar technology

A monolithic microwave frequency divider IC with an operating range of 1.4?5.3 GHz was developed and fabricated in a standard bipolar technology. The circuit operates on the principle of `regenerative frequency division?. Compared to the most popular divider concepts based on a master-slave D-flip-flop, an almost twice as high input frequency can be divided, provided that the same technology is used. A further advantage is the low power consumption.     

Monolithic HEMT-HBT integration by selective MBE

We have achieved successful monolithic integration of high electron mobility transistors and heterojunction bipolar transistors in the same microwave circuit. We have used selective molecular beam epitaxy and a novel merged processing technology to fabricate monolithic microwave integrated circuits that incorporate both 0.2 μm gate-length pseudomorphic InGaAs-GaAs HEMTs and 2 μm emitter-width GaAs-AlGaAs HBTs. The HEMT and HBT devices produced by selective MBE and fabricated using our merged HEMT-HBT process exhibited performance equivalent to devices fabricated using normal MBE and our baseline single-technology processes. The selective MBE process yielded 0.2 μm HEMT devices with g_m=600 mS/mm and f_T=70 GHz, while 2×10 μm² HBT devices achieved β>50 and f_T=21.4 GHz at J_c=2×10⁴ A/cm². The performance of both a 5-10 GHz HEMT LNA with active on-chip HBT regulation and a 20 GHz Darlington HBT amplifier are shown to be equivalent whether fabricated using normal or selective MBE