Si_(1-X)Ge_X/Si红外光电探测器

本文报导了用两种缓冲层生长技术研制的 Si1- XGe X/ Si异质结 pin型红外探测器。其波长范围为0 .70～ 1.5 5 μm,峰值波长为 0 .96～ 1.0 6 μm,暗电流密度低达 0 .0 3μA/ mm2 ( - 2 V) ,在 1.30 μm处的响应度高达 0 .15 A/ W( - 5 V) ;讨论了 Ge组分、外延层厚度、偏置电压等对探测器参数的影响     

Si1-XGeX/Si红外光电探测器

本文报导了用两种缓冲层生长技术研制的Ｓｉ１－ｘＧｅｘ／Ｓｉ异质结ｐｉｎ型红外探测器。其波长范围为０．７０～１．５５μｍ,峰值波长为０．９６～１．０６μｍ,暗电流密度低达０．０３μＡ／ｍｍ＾２（－２Ｖ）,在１．３μｍ处的响应度高达０．１５Ａ／Ｗ（－５Ｖ）;讨论了Ｇｅ组分、外延层厚度、偏置电压等对探测器参数的影响。     

High-Speed (60 GHz) and Low-Voltage-Driving Electroabsorption Modulator Using Two-Consecutive-Steps Selective-Undercut-Wet-Etching Waveguide

Based on a novel structure of waveguide, a broadband electroabsorption modulator (EAM) with low driving voltage and high extinction ratio has been demonstrated in this letter. The waveguide of InGaAsP-InP p-i-n layer structure is fabricated by two consecutive steps of selective undercut-wet-etching: 1)HCl : H₃PO₄ on p-InP (p- layer), and 2)H₃PO₄ : H₂O₂ : H₂O on InGaAsP (active region), showing a wide ridge with a narrow undercut active region. Low capacitance and low cladding impedance can thus be simultaneously attained in such waveguides, leading to low microwave loss and high-speed electrooptical (EO) response. A ridge as wide as 8 mum with a 3-mum- wide active region and a 450-nm gap height in the undercut portion has been fabricated. A 350- mum -long waveguide of EAM is designed, revealing a high extinction ratio of > 30 dB (D.C.) and a modulation efficiency of > 20 dB/V (D.C.) with polarization-insensitive operation at a wavelength of 1550 nm. As high as 60 GHz of a 3-dB bandwidth is measured in the high-speed EO conversion. Calculations by an equivalent circuit model are quite fitted with the measurement, revealing that broadband performance is mainly attributed to the low microwave propagation loss in such waveguides.     

AlInGaN/GaN PIN紫外光电探测器的研制

用AlInGaN四元合金代替AlGaN作为PIN探测器的有源层,研制出AlInGaNPIN紫外探测器.详细介绍了该器件的结构设计和制作工艺,并对器件进行了光电性能测试.测试结果表明,器件的正向开启电压约为1.5 V,反向击穿电压大于40 V;室温-5 V偏压下,暗电流为33 pA,350 nm处峰值响应度为0.163 A/W,量子效率为58%.     

GaInAs/InP large bandwidth (> 2 GHz) PIN detectors

Ga0.47In0.53As/InP heterophotodiodes are demonstrated with a bandwidth greater than 2 GHz, less than 0.5 pF capacitance, and subnanoampere dark current at the operating bias. These photodiodes satisfy criteria for both low noise and high speed in the 1 MHz?2 GHz bit-rate range for optical fibre telecommunications     

fT为15GHz的SiGe/SiHBT

介绍了用分子束外延生长的特征频率fT为15GHz的SiGe/Si HBT,还给出了器件的制造方法及测量结果.     

CH3CSNH2/NH4OH钝化GaInAsSb/GaSb PIN红外探测器

引入一种新的低毒化合物CH3CSNH2/NH4OH对 GaInAsSb化合物探测器的表面进行了钝化处理，可使其暗电流降低一个数量级，动态电阻增大25倍多，且钝化83天后保持良好的钝化效果，取得了与（NH4)2S溶液一样理想的钝化效果. 并采用AES和XPS对钝化前后的GaInAsSb材料进行了分析.     

CH3 CSNH2/NH4 OH钝化GaInAsSb/GaSb PIN红外探测器

引入一种新的低毒化合物CH3CSNH2/NH 4OH对GaInAsSb化合物探测器的表面进行了钝化处理,可使其暗电流降低一个数量级,动态电阻增大25倍多,且钝化83天后保持良好的钝化效果,取得了与(NH4)2S溶液一样理想的钝化效果.并采用AES和XPS对钝化前后的GaInAsSb材料进行了分析.     

基于基片集成波导(SIW)的双模带通滤波器

首先介绍了基片集成波导(SIW)这一新技术,并用表面电流理论解释了电磁波在SIW中的传输模式。同时,通过使用凹型过渡和接地共面波导过渡两种转换方式,解决了基片集成波导与微带线的过渡问题,从而解决了滤波器和有源微波电路的集成问题。文章用这两种过渡方式,分别设计了中心频率在5.63GHz和5.45GHz的双模带通滤波器。实验表明:这两种滤波器在通带内的反射损耗S11均优于-21dB,-3dB带宽都在50MHz以上。     

Effects of High-Energy Electron Irradiation on ZnO/Si MSM Photodetectors

ZnO/Si metal–semiconductor–metal photodetectors (MSM-PDs) were subjected to high-energy electron irradiation (HEEI) to total fluence of 2 × 10¹³ cm⁻². ZnO/Si MSM-PDs demonstrated at least 43% greater radiation resistance than similar Si devices. Room-temperature annealing of radiation damage was observed as 63% recovery of photocurrent over 47 days. The current transport mechanism for ZnO/Si MSM-PDs was dominated by space-charge-limited conduction (SCLC) with minimal effect on conduction regime due to HEEI. Analysis of photoluminescence (PL) data indicates that the radiation-induced defects are likely oxygen and zinc vacancies, i.e., (V₀⁺) and (V_Zn ^- - H ⁺ )⁰ (\hbox{V}_{\rm{Zn}}^{ - } - \hbox{H}^{ + } )^{0} , respectively.     

GexSi1－x／Si超晶格PIN波导探测器结构及性能参数

从ＰＩＮ波导探测器性能参数的定义出发，阐述了各参数之间的内在联系，说明量子效率与带宽、灵敏度等物理量之间的矛盾现象。通过对具体结构及参数的分析比较，说明结构与参数之间的影响方式以及ＧｅｘＳｉ１－ｘ／Ｓｉ超晶格波导探测器的特有性质，进一步论证了波导探测器的优点     

基片集成波导弯曲结构的研究

基片集成波导以其低损耗和易于集成等特点越来越广泛地应用于微波毫米波电路中。在实际应用中,基片集成波导的直角弯曲结构的运用是不可避免的。针对传统的弯曲结构进行改进,仿真了直切弯曲结构和圆弧弯曲结构的传输特性。并在分析基片集成波导中电感销钉的特性之后,设计了一种含销钉的直角弯曲结构。仿真和实测结果表明,所设计弯曲结构的回波损耗小于-15dB,带宽达到4.8GHz,通带内电压传输系数高于-1.5dB,具有良好的传输性能,可以广泛地应用于微波电路中。     

An Integrated Sideband-Separating SIS Mixer Based on Waveguide Split Block for 100 GHz Band with 4.0–8.0 GHz IF

We have developed an integrated sideband-separating SIS mixer for the 100 GHz band based on the waveguide split block. The measured receiver noise temperatures with 4.0–8.0 GHz IF are less than 60 K in the LO frequency range of 90–110 GHz, and a minimum value of around 45 K is achieved at 100 GHz. The image rejection ratios are more than 10 dB in the frequency range of 90–110 GHz. We have installed the sideband-separating SIS mixer into an atmospheric ozone-measuring system at Osaka Prefecture University and successfully observed an ozone spectrum at 110 GHz in SSB mode. This experimental result indicates that the sideband-separating SIS mixer is very useful for astronomical observation as well as atmospheric observation.     

Output power density of 5.1/mm at 18 GHz with an AlGaN/GaN HEMT on Si substrate

Microwave frequency capabilities of AlGaN/GaN high electron mobility transistors (HEMTs) on high resistive silicon (111) substrate for power applications are demonstrated in this letter. A maximum dc current density of 1 A/mm and an extrinsic current gain cutoff frequency (F/sub T/) of 50 GHz are achieved for a 0.25 /spl mu/m gate length device. Pulsed and large signal measurements show the good quality of the epilayer and the device processing. The trapping phenomena are minimized and consequently an output power density of 5.1 W/mm is reached at 18 GHz on a 2/spl times/50/spl times/0.25 /spl mu/m/sup 2/ HEMT with a power gain of 9.1dB.     

基片集成波导梳状交替相位功分器

利用基片集成波导技术在单层印制电路板上设计了微波功分器,通过调节感性金属柱的位置,实现了相邻端口的输出相位相差180度的特性,实验测试结果与仿真结果吻合良好.     

Half Mode Substrate Integrated Waveguide (HMSIW) Bandpass Filter

This letter presents the design and experiment of the half mode substrate integrated waveguide (HMSIW) bandpass filters. Three-pole and five-pole HMSIW filters are simulated by using CST software and fabricated with a single layer standard printed circuit board process. Different external-coupling approaches are adopted in the design of the two filters. The measured results are in good agreement with the simulated results. Low insertion loss and good selectivity are achieved     

E-Plane Integrated Parallel-Strip Screen Waveguide Filters (Short Papers)

A rigorous field theory design of a class of rectangular waveguide screen fiIters is presented which achieves improved attenuation in the upper stopband. The method of field expansion into suitable eigenmodes used considers the effects of the finite rectangular E-plane grid thickness and the mutual higher order mode interaction of the single screens. Calculated results up to 55 GHz show that the peak attenuation in the upper stopband for a Ka-band (26-40-GHz) two-resonators filter example with a midband frequency of f/sub 0/= 37 GHz is about 70 dB, whereas its planar circuit single-metal-insert counterpart reaches only about 34 dB. A Ku-band (12- 18-GHz) filter prototype with three metal-etched screens yields a measured passband insertion loss of 0.8 dB at about f/sub 0/= 17 GHz and a measured attenuation in upper stopband of about 50 dB up to 25 GHz.