基才Delphi的DDS可视化新型任意传号发生器

以FPGA为核心,TFT实现图形与菜单界面,USB1.1与Delphi7.0完成与上位机接口及图形操作界面,对低频段采用时钟分段分频法,在MCU的控制下实现DDS低频高精度双通道±8 V,0.01 Hz～10 MHz正弦波等常规波形外,还能输出数码流、调制信号、随机噪声、扫频信号及时域/频域自定义波形,信号参数均可步进在线可调。实验表明该设计是行之有效的,在介绍系统设计思想的同时,重点讲述FPGA设计、信号输入方法及提高低频段时域精度的措施等。     

基于Delphi的DDS可视化新型任意信号发生器

以FPGA为核心,TFT实现图形与菜单界面,USB1.1与Delphi7.0完成与上位机接口及图形操作界面,对低频段采用时钟分段分频法,在MCU的控制下实现DDS低频高精度双通道±8 V,0.01 Hz～10 MHz正弦波等常规波形外,还能输出数码流、调制信号、随机噪声、扫频信号及时域/频域自定义波形,信号参数均可步进在线可调.实验表明该设计是行之有效的,在介绍系统设计思想的同时,重点讲述FPGA设计、信号输入方法及提高低频段时域精度的措施等.     

自己动手制作测试仪器（应用篇）

本刊今年第9、10期刊登的自制函数信号发生器具有频率范围为0．1Hz～20MHz的函数波形信号输出,如图1所示。具有线性／对数的扫频电压和扫频功率信号输出,扫频的上下限频率可调且有频标亮线显示;附带的数字频率计能精确测量输出信号的频率、上下限频率和频标亮线处的频率;同时还具有用低频函数信号调制的高频信号输出等许多功能,现举几个应用例子供读者参考。     

基于单片机和FPGA的扫频仪设计

以89S52单片机和FPGA为控制核心,设计了一个测试四端网络幅频特性和相频特性的扫频仪.系统功能分为扫频信号产生、幅频特性测试、相频特性测试等模块;而操作部分包括矩阵键盘、点阵式液晶显示器、波形显示电路.系统可以测量未知网络特定频率点的频率特性,此外,用户还可以通过键盘设置扫频信号的上下限,并利用示波器精确的显示幅烦、相频曲线.     

基于DDS技术的虚拟扫频仪的设计与实现

本文介绍了基于DDS技术的虚拟扫频仪的硬件与软件设计，并详述了DDS技术以及用该技术实现扫频信号源的方法。利用该技术开发的虚拟扫频仪具有性能稳定、测试误差小、使用灵活方便等特点，可广泛应用于测试领域。     

BT-4型扫频仪信号源的改进

基于DDS技术，改造BT-4型扫频仪中的扫频信号发生器，使其具有高稳定度、高分辨率、高精度的特点。同时为了使扫频仪能够对被测电路的动态范围进行检测，使扫频仪得到更广泛的应用，运用AGC控制技术，使电压稳定在10V；然后通过控制D／A使输出电压按测试需要输出。硬件给出了具体电路参数，软件给出了相应软件流程，总结了其它波型产生的方法。     

一种新型扫频仪的设计

选用了一种基于DSP与FPGA结构的新型射频扫频仪的设计方案,重点讨论了其扫频信号源的设计.分析了频率合成技术的发展趋势,介绍了PLL技术和DDS技术的原理,并在此基础上给出了以PLL+DDS方式实现的扫频信号源设计.     

基于TMS320F2812 DSP的音频数字扫频仪研制

本文基于TMS320F2812DSP芯片,设计并实现了一台音频数字扫频仪。采用SPWM调制方法,运用DDS原理寻址正弦表,使用DSP的GP定时器产生占空比按正弦规律变化的PWM波,将滤波调理后得到的扫频信号加到带阻网络输入端,再对带阻网络前后端信号采样,进行频域及时域求解,最后在上位机中绘制出幅频特性曲线。该数字音频扫频仪充分利用了DSP内部的资源,处理速度快,抗干扰能力强,扫频精度高。     

一种基于FPGA的激光干涉低频振动校准方法

针对现有外差激光干涉法存在低频振动校准时采集及处理数据量大,导致处理系统内存不足或处理时间长等问题。基于FPGA的外差激光干涉仪输出S/PDIF信号解码提出了一种低频加速度计振动校准方法,其能够在减少数据处理量的同时保证校准精度。实验结果表明,该方法能够实现0. 1～10 Hz频率范围内的高精度灵敏度幅值与相位校准。     

高精度DDFS信号源FPGA实现

为进行高精度信号源的设计,同时降低设计成本,以Cyclone Ⅱ系列低端FPGA为核心,利用直接频率合成技术,对正弦信号等数据进行1/4周期压缩存储到ROM中,在外部时钟频率为50 MHz,实现了正弦信号源的设计,同时,实现三角波、锯齿波、矩形脉冲及2-ASK、2-PSK和2-FSK等数字调制信号,系统还具有扫频、指定波形次数等功能.仿真结果表明,信号源精度高,频率调整步进可达0.034 92 Hz,频率范围为0.034 92 Hz~9.375 MHz,制作成本低,功能丰富.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.