高斯激光辐照焦平面探测器温度场分析与仿真

为了研究激光辐照焦平面探测器的温度效应,采用ANSYS有限元软件建立高斯脉冲激光辐照锑化铟红外焦平面探测器的3维结构分析模型,并对该探测器3维温度场效应进行了研究。结果表明,激光辐照下,探测器最大温度出现在最上层的锑化铟芯片上,探测器最大温度达到锑化铟芯片熔点温度798K时,将会引起探测器的热熔融损伤,且熔融损伤阈值受到脉宽、光斑半径等激光参量的影响;高斯脉冲激光辐照下,探测器中各层材料的温度场分布呈现出非连续的高温极值区域,其主要原因是位于锑化铟红外焦平面探测器中间层相间分布的铟柱和底充胶具有迥异的热学性质,并且造成探测器温度场云图中锑化铟芯片、底充胶与硅读出电路高温极值区域形成类似于互补的高温分布。这为进一步研究温升效应引起的应力场分布、提高探测器激光防护性能提供了重要的理论分析依据。     

激光辐照Si-CCD热力效应的研究

由于光电探测器吸收激光后的温升、以及由于温升造成的各种现象,均能使探测器遭受到不同程度的损伤.丈中利用热弹性理论对氧碘激光器辐照硅材料进行研究,建立二维平面模型,通过解析计算得到由激光辐照半导体材料引起的温度场和应力场的瞬态分布.     

目标运动对激光辐照温度场的影响

以地基激光辐照运动目标为研究背景,分析运动目标辐照参数特性对激光辐照温度场的影响。首先,在设定交互场景的基础上,求解激光辐照参数,总结运动目标激光辐照参数的特点为:平均功率密度随目标运动不断变化;辐照面域光束强度空间分布为椭圆形高斯分布;目标表面存在强制热对流。其次,利用有限容积法求解激光辐照运动目标温度场分布。最后,分析运动目标辐照参数特性对温度场分布的影响。分析结果表明:随着目标的运动,激光辐照平均功率密度不断增加,目标温升速率不断增加;激光束辐照运动目标的角度不同,辐照面域的光束强度空间分布不同,温升区域也不相同;运动目标表面存在强制热对流形式的能量交换,减缓了表面温升。     

激光辐照飞行靶三维温度场数值模拟

以地基激光辐照飞行靶为研究背景,建立激光迎面辐照和横向辐照靶目标两种交汇场景,考虑激光辐照面域和功率密度分布随靶目标飞行的变化,求解激光辐照参数,建立热传导模型;利用有限容积法,得到飞行靶三维温度场的数值解,分析目标运动性对温度场分布的影响。不同于激光辐照静止目标,辐照参数变化对温度场分布有较大的影响:随着靶目标的飞行,辐照面积逐渐减小,平均功率密度逐渐增加,目标温升速率不断增加;光束与靶目标夹角的变化,引起光束强度空间分布的变化,从而影响温升区域的变化。     

1. 319μm 激光诱导HgCdTe (PV 型)探测器混沌的研究

通过对1.319μm连续波激光辐照PV型HgCdTe探测器的实验研究，发现当激光辐照功率密度超过探测器的饱和阈值以后，激光能诱导探测器产生混沌现象，并得出相应的激光辐照功率密度范围，文中还对试验结果进行了论证与分析。     

CO2激光辐照下光学薄膜的温度场与热畸变

介绍了光学薄膜温度场的基本理论,利用交替隐型技术,对10.6μm激光辐照下介质薄膜的温度场分布进行了数值模拟和理论分析。在此基础上,利用夏克-哈特曼波前传感器对介质基底样品、不同厚度的介质单层膜样品以及不同膜系的YbF3/ZnSe介质多层膜样品在10.6μmCO2激光辐照下的热畸变进行了实验研究。研究结果表明,激光辐照下光学薄膜样品的温度场分布与辐照激光的光场分布、激光功率以及激光的辐照时间等因素有关。对于10.6μm激光而言,Ge最适宜做基底材料。     

高功率激光对光电器件的热-力破坏效应

热-力破坏效应是导致光电器件激光损伤的重要因素.以激光与材料相互作用机理为基础,建立了激光辐照光学材料、光电器件的热-力学模型,并对其温度场分布和热应力场分布进行了解析求解.在此基础之上,对激光对K9玻璃、类金刚石薄膜、胶合透镜和HgCdTe探测器的热-力破坏效应进行了数值分析和实验研究.     

脉冲激光辐照CCD探测器的硬破坏效应数值模拟研究

具有一定能量强度的激光辐照CCD图像探测器时可造成探测器的干扰和破坏.基于热传导和热弹性力学的基本关系式建立了脉冲激光辐照CCD多层结构的热力耦合数学物理模型,对热传导方程和应力平衡方程进行有限元数值求解,计算得到不同能量密度下脉冲激光辐照CCD的瞬态温度场和热应力场,分析了CCD最易损伤的位置及激光参数对探测器损伤的影响,并结合CCD的像元构造和工作方式阐明了CCD各层结构的损伤对CCD成像质量的影响程度及影响机理.     

混合频率激光干扰CCD探测器的仿真研究

激光辐照CCD图像探测器时可造成对探测器的干扰和破坏,为了增强激光对CCD探测器的损伤效果,提出了一种混合频率激光干扰方法,这种方法是将高重频激光和低重频激光耦合,使其同时作用于CCD探测器.基于热传导和热弹性力学的基本关系式建立了混合频率激光辐照CCD探测器遮光铝膜层的热力耦合数学物理模型,对热传导方程和应力平衡方程进行半解析求解,计算得到不同工作模式的激光辐照CCD探测器的遮光铝膜层的瞬态温度场和热应力场,并通过数值仿真定量地比较了不同工作模式激光光源对CCD的损伤效果.结果表明:相对于高重频激光和低重频激光单独作用探测器的情况,混合频率激光将会对CCD产生更加严重的损伤效应.     

强激光辐照探测器材料力学效应的解析研究

当探测器材料受激光辐照时,由于吸收激光的能量,从而在材料体内形成一个不均匀分布的温度场,由于材料是连续分布的介质,其各部分不能自由地膨胀,相互制约,从而产生热应力。一旦靶材中产生的热应力超过靶材的破坏强度,便会使材料造成永久性的损伤破坏。当辐照激光功率密度不高时,产生的热应力对靶材的破坏是一种十分重要的破坏机制。采用解析方法,研究了连续波化学激光辐照探测器材料时产生的温升及热应力,讨论了不同激光参数（ 强度、波型、波长及脉冲持续时间） 与温度变化及热应力之间的变化关系,以及造成探测器材料热应力损伤的激光强度阈值。     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks     

Call for Papers—Feature Topic,Vol.12,No.7,2015

正Information Centric Networking Information-Centric Networking(ICN) is an emerging direction in Future Internet architecture research,gaining significant tractions among academia and industry.Aiming to replace the conventional host-to-host communication model by a data-centric model,ICN treats data content as the first     

JOURNAL OF ELECTRONICS(CHINA)

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NEXT GENERATION WIRELESS NETWORKS–ESPECIALLY THE USE OF MILLI-MICROWAVE BANDS

The global bandwidth shortage of wireless communications has motivated the exploration of the naillimeter wave （ram-wave） frequency spectrum for the next generation wireless communications. Recent advances in RF CMOS technology and high speed baseband signal processing technologies have enabled tile extensive research and development of turn-wave wireless communications. The multi gigabit per second data rate of ram-wave system will lead to applications in many important scenarios, such as WPAN, WLAN,back-haul for cellular system. And the frequency bands include 28 GHz, 38 GHz, 45GHz, 60GHz, E-BAND and even beyond 100 GHz. The propagation and the imitation of the RF circuits design in these frequency bands make the directional antennas be inevitable for mm-wave communications.