热处理方法改善CdZnTe晶体性能研究

对电阻率为10^3-6Ω·cm的In掺杂Cd0．9Zn0．1Te晶片在Te气氛和Cd／Zn平衡蒸汽压下进行了热处理，对电阻率为10^8-9Q·cm的非掺杂晶片则在In气氛和Cd／Zn平衡蒸汽压下进行了热处理。结果表明，In掺杂Cd0．9Zn0．1Te晶片经处理后电阻率可提高3个数量级。非掺杂晶片在In气氛中热处理可很容易地改变导电类型，在热处理温度700℃，In分压6．1×10^-4Pa，退火时间达48h后，电阻率可以提高到2．6×10^9Ω·cm。     

In掺杂对Cd_(0.8)Mn_(0.2)Te巨法拉第效应的影响

常温下测量了Cd0.8Mn0.2Te晶片和多个掺In浓度不同的Cd0.8Mn0.2Te（以下简称Cd0.8Mn0.2Te：In）晶片的法拉第旋转谱和吸收边附近的透射光谱。结果表明,随着入射光子能量的增大,Cd0.8Mn0.2Te和Cd0.8Mn0.2Te：In的Verdet常数随之增大。掺In晶片的Verdet常数的变化与掺杂浓度有关：当光子能量在1．63～1．72eV范围内逐渐增加时,未掺In的测量值的变化范围是710～1820（°）／cm·T;当In浓度为8．96×10^16 atoms／cm^3时,Verdet常数增大到720-1960（°）／cm·T：当In浓度n分别为2．39×10^17,4．48×10^18 atoms／cm^3时,Verdet常数分别减小到660～1630,490-1090（°）／cm·T;当In浓度达到2．99×10^19 atoms／cm^3时,在1．63～1．70eV的光子能量范围内,Verdet常数减小到460～740（°）／cm·T。低掺In条件下,Verdet常数的增大是由于价带电子数增多,价带类P电子与Mn^2＋离子3d电子交换相互作用增强引起的;在高掺In量下,由于导带类s电子与Mn^2＋离子3d电子交换相互作用增强,导带能级分裂进一步减小,导致Cd0.8Mn0.2Te：In的Verdet常数减小。     

Cd在Cd0．9Zn0．1Te晶体中的有效扩散系数与扩散激活能

为了计算Cd在Cd0.9Zn0.1Te(CZT)晶体中的有效扩散系数DCd与扩散激活能QCd,利用Cd在CZT晶体中的扩散特性,设计了在不同Cd压下对CZT的退火实验,推导出了晶体电阻率与Cd有效扩散系数之间的函数关系,经过计算,首次获得了在1073 K,973 K和873 K温度时Cd原子在CZT晶体中的有效扩散系数DCd,分别为1.464×10-10cm2/s,1.085×10-11cm2/s和4.167×10-13cm2/s.将扩散数据经过拟合后得到了Cd原子在CZT晶片中有效扩散系数的表达式2.33×exp(-2.38 eV/kT)(873 K～1073 K),其中扩散激活能QCd为2.38 eV.     

SPS法制备的赝二元合金（Ga2Te3）x-（Bi0．5Sb1．5Te3）1-x（x=0～0．2）电学性能

采用放电等离子烧结（SPS）方法制备了赝二元合金（Ga2Te3）（Bi0.5Sb1.5Te3）1-x（x=0—0．2），并研究其电学性能。结果表明，在318K时（Ga2Te3）x-（Bi0.5Sb1.5Te3）1-x（x=0．1）合金的电导率为3．7×10^4Ω^-1·m^-1，是三元合金Bi0.5Sb1.5Te3的2倍，而Seebeck系数没有明显下降。从所测得的a和σ值可知，赝二元（Ga2Te3）x-（Bi0.5Sb1.5Te3）1-x（x=0．1）合金的功率因子最大，为2．1×10^-3（W·K^-2·m^-1），是三元Bi0.5Sb1.5Te3合金的1．5倍。     

真空熔炼AZ91镁合金过程中Mg元素的蒸发行为

在真空Ar气氛中熔炼AZ91镁合金，测定了不同精炼温度下Mg元素的蒸发速率。结果表明，随着精炼温度的升高，Mg元素的蒸发量增大。通过计算可知，Mg的蒸气压是Al的10^9倍，是Zn的46倍，因此主要是Mg的蒸发而导致合金其他元素含量升高。XRD分析表明，蒸发物是Mg元素。结合Mg元素的蒸发机制，在该试验条件下推导出Mg元素蒸发率的计算公式以及Mg元素的表观传质系数、蒸发率与精炼温度的关系，计算得出Mg元素蒸发率为0．86×10^-3-1．35×10^3g／cm^2·s，Mg元素的表观传质系数在2×10^-5-24×10^-5cm／s范围内。     

烧结温度对Ca0．6Sr0．4Bi4Ti4O15铁电陶瓷性能影响

利用溶胶凝胶法制备了钙锶铋钛（Ca0.6Sr0.4Bi4Ti4O15简称CSBT-0．6）铁电陶瓷，研究了烧结温度对CSBT-0．6铁电陶瓷相结构、显微结构以及铁电性能的影响，分析了相关机理。发现在1150℃进行烧结，样品晶粒发育较完全，晶粒a轴取向较大，铁电性能优良，剩余极化强度Pr=8．2μC／cm^2、矫顽场强Ec=57kV／cm、介电损耗tanδ=18×10^-4。     

Ca1-3xLn2xTiO3（x=0．13，0．2；Ln=La，Nd，Sm）高介微波介质陶瓷

探讨了烧结温度、组成和稀土元素对Ca1-3xLn2xTiO3（x=0．13，0．2；Ln=La，Nd，Sm）陶瓷的晶体结构、微波介电性能的影响。X射线衍射（XRD）分析表明，除Ca1-3xLn2xTiO3（x=0．2；Ln=Sm）陶瓷中含有少量的第二相（Sm2Ti2O7）外，其余Ca1-3xLn2xTiO3（x=0．13，0．2；Ln=La，Nd，Sm）陶瓷均形成了单一正交钙钛矿相。x=0．13的样品微波介电性能明显优于相应的x=0．2的样品。部分Ca1-3xLn2xTiO3（x=0．13，0．2；Ln=La，Nd，Sm）陶瓷微波介电性能如下：ε=119．6、Qf=10674GHz、τf=304．4×10^-6/℃（x=0．13、Ln=La）；ε=108．9、Qf=14919GHz、τf=236．2×10^-6／℃（x=0．13、Ln=Nd）；ε=101．3、Qf=14485GHz、τf=186．6×10^-6／℃（x=0．13、Ln=Sm）。     

SiC／Ti6A14V复合材料界面反应扩散系数和微观扩散机理

采用三元体系半无限扩散偶的高斯方法，求解了SiC／Ti6A14V复合材料界面反应层中相关元素的扩散系数，计算的浓度分布和实测值一致。碳原子通过反应层的扩散服从间隙扩散机制，硅原子的扩散为空位扩散机制。由于碳扩散的振动能最低并且跃迁距离最短，而供硅扩散的空位不足，碳和硅在反应产物TiC，中具有最小的内禀扩散系数，分别为8．9403×10^-16和4．7747×10^-16·m^2·s^-1。研究表明，在SiC／Ti6A14V复合材料界面反应的过程中，反应元素通过反应层TiCx的扩散是一个主要的控制步骤。     

益仁堂进入稀土高新区建20kt／a高纯铝项目

内蒙古益仁堂集团从2008年5月起至2012年5月为止的这段时间内,将在包头稀土高新区内建设产业链完整的高纯铝项目．总投资22亿元．占地约64×10^4m^2：20kt／a高纯铝项目,占地面积10×10^4m2;30kt／a电子光箔项目,占地面积16．7×10^4m^2：6．3kt／a腐蚀化成箔项目,占地面积37．3×10^4m^2。     

12CAO·7Al2O3和γ-2CaO·SiO2混合物相的合成和溶出性能研究

本文研究了CaO的加入量、合成温度、保温时间和出炉温度对合成产物物相的影响,结果发现：当CaO2Al2O3：SiO2为2．38：1：0．77,合成温度1500℃,保温时间30min和出炉温度100℃时可获得只含有12CAO·7Al2O3和γ-2CaO·SiO2且氧化铝溶出性能较好的物料。采用二次回归正交试验法对读物料进行了溶出性能的研究,详细考察了其受碳钠浓度、氧化铝浓度、溶出温度、溶出时间和液固比的影响规律,得到的回归方程在0．01水平上高度显著,且方程回归值与试验值的相对误差不超过3％,回归方程的教学表迭式为：氧化铝溶出率Y=-3．094×100Nc^2-4．049×10^-5fT＋5．853×10^-3Nc＋3．192×10^-3t＋4．888×10^-3T＋5．183×10^-2L／S-5．99×10^-3．     

Microstructural evolutions of a Cu75-Fe5-Ni20 alloy depending on the isothermal annealing temperatures

The microstructures formed in a Cu₇₅-Fe₅-Ni₂₀ alloy on isothermal annealing at 1073 K were investigated by means of transmission electron microscopy (TEM) and the EELS element mapping technique, to compare with the precipitation phenomena occurring at 873 K. Cubic and rod precipitates were simultaneously formed in the copper matrix in the initial stage of annealing at 1073 K. This feature shows a sharp contrast to the feature observed at 873 K, since only cubic precipitates were observed in the specimens isothermally aged at lower temperatures. The cubic precipitates tend to stretch their shapes along one of the 〈100〉 directions of the Cu matrix and to have rectangular shapes in the late stage of the annealing at both temperatures. This tendency was, however, more clearly observed in the specimen receiving the isothermal annealing at 1073 K.     

Reduction behavior of cerium(Ⅲ) ions in NaCl-2CsCl melt

The cathodic process of cerium(Ⅲ) ions in NaCl-2CsCl melt was studied by cyclic voltammetry and square wave voltammetry with tungsten and gold electrodes at 873 K. The two electroanalytical methods yield similar results. The cathodic process of cerium(Ⅲ) ions consists of two reversible steps: Ce3+ + e-= Ce2+ and Ce2+ + 2e-= Ce. The half wave potentials of Ce3+/Ce2+ and Ce2+/Ce were determined as -2.525 V vs. Cl2/Cl- and -2.975 V vs. Cl2/Cl-, respectively. The diffusion coefficient of Ce3+ was also determined as 5.5 × 10-5 cm2·s-1.     

射频反应磁控溅射法制备ZnO:Al透明导电薄膜的光电性能

室温下采用射频(RF)反应磁控溅射技术在玻璃衬底上沉积具有(002)择优取向的透明导电Al掺杂ZnO(AZO)薄膜。XRD结果表明,制备的AZO薄膜为多晶,具有c轴择优取向。退火处理能提高其结晶度。在Al靶射频功率为40W,ZnO靶射频功率为250W,氩气流量为15mL/min的条件下,获得200nm厚的薄膜电阻率约3.8×10-3?·cm,在可见光范围内有很好的光透过率。     

Preparation and characteristics of indium tin oxide (ITO) thin films at low temperature by r.f. magnetron sputtering

Low resistivity and highly transparent ITO conducting films for solar cell applications were fabricated at low temperature by r.f. Magnetron sputtering. ITO films were deposited on glass and silicon substrate. Electrical, optical, structural and morphological properties of the ITO films were investigated in terms of the preparation conditions. The annealing treatment has improved the properties of the ITO films at different degree. The maximum transmittance of the obtained ITO films in the visible range is over 92%, and the low resistivity for the ITO films are about 3.85×10-4Ω·cm at 80℃, 80 W after annealing.     

Role of Al2O3 layer in oxidation resistance of Cu-Al dilute alloys pre-annealed in H2 atmospheres

Copper was alloyed with small amounts of Al (0.2, 0.5, 1.0 and 2.0 mass%) to improve the oxidation resistance. Copper (6 N) and the Cu-Al alloys were oxidized at 773-1173 K in 0.1 MPa oxygen atmosphere after hydrogen annealing at 873 K. Continuous very thin Al₂O₃ layers were formed on the surface of all Cu-Al dilute alloys during the hydrogen annealing. Oxidation resistance of Cu-Al alloys was improved especially for Cu-2.0Al at 773-973 K, while it decreases on increasing the oxidation temperature. Cu-Al alloys followed the parabolic rate law at 1173 K, but most of other cases do not at and below 1073 K. Oxidation resistance for Cu-Al alloys was found relevant to the maintenance of the thin Al₂O₃ layer at the Cu₂O/Cu-Al alloy interface.     

Phase transformation in a dental Pd---Cu---Ga alloy

Phase transformation behavior in a dental Pd---Cu---Ga alloy was studied by means of hardness tests, electrical resistivity measurements, X-ray diffraction and transmission electron microscopy. Annealing at 673 K produces two hardness peaks which correspond to the formation of a metastable phase with ordered fet structure and the precipitation of the equilibrium phases, ₁(fcc) + ₂(fcc) + Pd₂Ga (orthorhombic), respectively. On the other hand, annealing at 873 K exhibits only one peak due to the precipitation of the equilibrium phases. The difference of the phase transformation between both annealings is interpreted in terms of the free energy.     

Microstructure Control and High Temperature Properties of Al-Mn-Based AlloysEI北大核心CSCD

The process of production and working environment of heat exchangers call for materials with good elevated temperature properties. However, the previous investigations were mainly focused on their room temperature properties. The relationship between microalloying and high temperature properties, especially creep properties of Al-Mn-based alloys are barely discussed. In order to improve the industrial applications of Al-Mn-based alloys, the effect of Mg, Ni and Zr additions and annealing process on the microstructure and high temperature properties of Al-Mn-based alloys were studied in this work. The investigated alloys were treated in two ways, first one is cold-rolling and heat treatment at 873 K for 10 min, and the second one is cold-rolling, heat treatment at 623 K for 1 h and 873 K for 10 min. The results indicate that annealing process has remarkable effect on the grain shape, fine equiaxed crystal grains are obtained in the former, while stable elongated grains are obtained for precipitation precedes recrystallization at 623 K in the latter. With Mg addition, more AlMnSi phase precipitated during annealing. The addition of Zr and Ni increases the type and amount of heat resistant compounds, precipitate Al3Zr and AlMnSiNi, which are beneficial to improving high temperature properties of Al-Mn alloy. Al-Mn-0.3Mg-0.2Ni alloy has the best elevated temperature properties, and the tensile strength of it is 102 MPa (50 MPa higher than Al-Mn alloy) at 523 K. And the steady-creep rate is strongly decreased to 3.93x10(-8) s(-1), two orders of magnitude smaller than Al-Mn alloy at the temperature of 523 K under the stress of 40 MPa. With dispersoids complicated or increased, the movement of dislocations are pinned strongly, which are contribute to improving the creep properties of Al-Mn alloy for the creep is mainly controlled by dislocation climb.     

熔盐电脱氧法中氧离子在氯化钙熔盐中的 扩散动力学研究

本文以分子模拟为基础，构建了O2-/CaCl2的全原子模型，以Born-Mayer-Huggins（BMH）势函数对体系进行描述，研究了O2-在CaCl2熔盐的扩散动力学行为。结果表明：1073 K时O2-扩散系数为2.01×10-5 cm2/s，与F.D.Ferro经验公式的计算值一致；同时发现温度与O2-的扩散系数呈正相关关系，拟合得到O2-在CaCl2熔盐中的扩散活化能为15.6 kJ/mol。在微观结构方面，由于静电吸引的作用，熔盐中Ca2+会在O2-周围形成正电配位层，并束缚了O2-的扩散；O2-从形成的Ca2+配位层中逸出需要越过的能垒约为1.7 J。本文不仅揭示了O2-在CaCl2的动力学行为，也为计算机模拟指导研究改良熔盐配方提供研究基础。     

AL6XN超级奥氏体钢高温拉伸时的动态应变时效

研究了固溶处理AL6XN超级奥氏体钢在温度773～973K以及3.3×10-5～3.3×10-3s-1应变速率范围的高温拉伸力学行为。结果表明,AL6XN奥氏体钢在以上实验条件下(不包括873K,3.3×10-5s-1)均存在动态应变时效,具体表现为在真应力-真应变曲线上出现锯齿形,同时屈服强度在773～973K范围呈现平台区;临界应变量随着温度从773K升高到923K逐渐降低,并且在此温度范围激活能为304kJ/mol,说明动态应变时效的机制为AL6XN奥氏体钢中Cr和Mo等置换原子与位错的交互作用。透射电镜分析同时表明AL6XN奥氏体钢形变后位错结构呈平面滑移特征。