Weak-Beam Dark-Field Microscopy of Complex Stress States in X7R-Type BaTiO3 Dielectric Core–Shell Structures

X7R-type BaTiO₃ materials were analyzed using X-ray diffraction (XRD) and transmission electron microscopy (TEM). Powder XRD indicated that the materials had pseudocubic lattices, but core–shell grain structures predominated in bright-field (BF) TEM images. Electron diffraction patterns across the core–shell boundaries and convergent beam electron diffraction patterns of cores and shells indicated that coherent grain boundaries existed between cores and shells. The flat dielectric constant–temperature curves obtained from these materials can be interpreted in terms of the internal stress states in individual grains. The stress states were observed using weak-beam dark-field (WBDF) microscopy, and strain contours formed by distorted crystal planes were visible in the WBDF images. The contours observed were dependent on the stress state of the crystal instead of crystal symmetry and the stress distribution in individual grains was determined by both the thickness ratio of shell and core, and the geometrical relationship of the core and the shell. Twins observed in this material were determined to be growth rather than mechanical twins, through observation of the strain contour distribution.     

Single-Step Dip Coating of Crack-Free BaTiO3 Films >1 μm Thick: Effect of Poly(vinylpyrrolidone) on Critical Thickness

BaTiO₃ coating films were prepared from Ba(CH₃COO)₂–Ti(OC₃H₇ⁱ)₄–H₂O–CH₃COOH–C₃H₇ⁱOH solutions containing poly(vinylpyrrolidone) (PVP) via single-step, nonrepetitive dip coating. The critical thickness—i.e., the maximum film thickness achieved without crack formation via nonrepetitive dip coating—was successfully increased by incorporation of PVP in the precursor solution. Relatively dense, crack-free BaTiO₃ films >1 μm in thickness were achieved via single-step deposition using a solution containing PVP of average molecular weight of 630 000. Incorporation of an excess amount of PVP, however, led to a decrease in the critical thickness. Higher-molecular-weight PVP was more effective in increasing the critical thickness, whereas N-vinyl-2-pyrrolidone monomers did not affect the critical thickness. Stepwise heating of the gel films resulted in increased optical transmittance of the films, accompanied by film densification.     

Hydride Vapor Phase Epitaxy of GaN Thick Films by the Consecutive Deposition Process Using GaCl3

GaN buffer and main layers were grown by the conventional hydride vapor phase epitaxy technique using GaCl₃ consecutively. The deposited buffer layers were investigated by atomic force microscopy and X-ray analysis. To examine the behavior of the buffer layers at main layer growth temperature, heat treatment was conducted at 900°C. Based on the results of the buffer layer study, GaN thick films were grown at 1050°C. Optimum deposition conditions of buffer layer from the buffer and main layer studies generally coincided. On the φ scanning pattern, the GaN films grown on (0001) Al₂O₃ were single-crystalline. Band-edge emission dominated photoluminescence was observed at room temperature.     

Base-Metal-Electroded BaTiO3 Capacitor Materials with Duplex Microstructures

The effect of dopants and processing conditions on the dielectric properties of base-metal-electroded materials was investigated. BaTiO₃ materials simultaneously doped with MgO and Y₂O₃ additives can achieve small capacitance variation (Δ C / C ), which meets the X7R specification, when the proportion of additives is abundant enough and the materials are not over-fired. Presumably, small Δ C / C values of thus obtained materials are the result of the formation of core–shell structure, which requires stringent control of material processing conditions. In contrast, X7R-type materials can be obtained in a much wider processing window, when prepared by mixing two BaTiO₃ materials of suitable dielectric constant–temperature ( K – T ) characteristics. Duplexed materials prepared from these two end-point BaTiO₃ materials with ratios ranging from 3:1 to 1:2 exhibit K – T behavior within the X7R specification, provided that one of the components possesses flat K – T behavior. Moreover, the dielectric properties of these materials were simulated using a simplified microstructural model. Simulation results indicate that the effective dielectric constant of core–shell materials, ( K _e)_CS, varies significantly not only with the dielectric properties of cores and shells, but also with the shell-to-core thickness ratio, whereas the effective dielectric constant of duplexed materials, ( K _e)_D, can be maintained at a very small Δ C / C value for a wide range of end-point constituent ratios, which agrees very well with the measured K – T properties for the materials.     

Roles of Ba/Ti Ratios in the Dielectric Properties of BaTiO3 Ceramics

The effect of the Ba/Ti ratio on microstructure, dielectric/ferroelectric properties, and domain width was studied using optical microscopy, ɛ( T ) curves, D – E hysteresis, and transmission electron microscopy. Although Ti-excess samples showed abnormal grain growth and a decrease of room-temperature permittivity due to a liquid phase at grain boundaries, its ferroelectric properties were similar to those of stoichiometric BaTiO₃ ceramics. However, in Ba-excess samples, an increase of permittivity and ferroelectric properties different from those of stoichiometry were found. Changes in domain width and ferroelectric transition behavior indicated that the variation of dielectric properties was related to the internal stress. It is proposed that this internal stress originated from differences in the thermal expansion coefficient between the matrix and the second phase.     

Effect of Ba6Ti17O40/BaTiO3 Interface Structure on {111} Twin Formation and Abnormal Grain Growth in BaTiO3

A structural transition of Ba₆Ti₁₇O₄₀/BaTiO₃ interfaces from faceted to rough was induced by reducing oxygen partial pressure in the atmosphere. As the oxygen partial pressure decreased, the number densities of {111} twins and abnormal grain decreased. TEM observation showed that the twin formation was governed only by the faceting of the interface. Experimental evidence of {111} twin-assisted abnormal growth of faceted BaTiO₃ grains was also obtained.     

Electrical Properties of Cerium-Doped BaTiO3

The high-temperature equilibrium electrical conductivity of Ce-doped BaTiO₃ was studied in terms of oxygen partial pressure, P (O₂), and composition. In (Ba_1−xCe _x )TiO₃, the conductivity follows the −1/4 power dependence of P (O₂) at high oxygen activities, which supports the view that metal vacancies are created for the compensation of Ce donors, and is nearly independent of P (O₂) where electron compensation prevails at low P (O₂). When Ce is substituted for the normal Ti sites, there is no significant change in conductivity behavior compared with undoped BaTiO₃, indicating the substitution of Ce as Ce⁴⁺ for Ti⁴⁺ in Ba(Ti_1−yCe _y )O₃. The Curie temperature ( T _c) was systematically lowered when Ce³⁺ was incorporated into Ba²⁺ sites, whereas the substitution of Ce⁴⁺ for Ti⁴⁺ sites resulted in no change in this parameter.     

Incorporation of Er3+ into BaTiO3

The incorporation of Er³⁺ into BaTiO₃ ceramics was investigated on samples containing 0.25, 0.5, 1, 2, 8, and 10 at.% of dopant, after sintering at 1350–1550°C in air. For Er³⁺ concentrations ≤1 at.%, dense and large-grained ceramics with low room-temperature resistivity (10²–10³Ω·cm) were obtained. The observed properties are largely independent of stoichiometry. Simultaneous substitution of Er³⁺ at both cation sites, with higher preference for the Ba site, is proposed. The behavior of heavily doped ceramics depends on stoichiometry. When Ba/Ti < 1, the electrical properties change from slightly semiconducting to insulating as Er concentration increases from 2 to 8 at.%. The ceramics have tetragonal perovskite structure and contain a large amount of Er₂Ti₂O₇ pyrochlore phase. On the other hand, when Ba/Ti > 1, the ceramics are insulating, fine-grained, and single phase. In this case, incorporation of Er³⁺ predominantly occurs at the Ti site, with oxygen vacancy compensation. Incorporation is accompanied by a significant reduction of tetragonality and by expansion of the unit cell. The different results indicate that Er³⁺ solubility at the Ba site does not exceed 1 at.%, whereas solubility at the Ti site is at least 10 at.%. However, the incorporation of Er³⁺ and the resulting properties are also strongly affected by sintering conditions.     

Dislocation Loop Formation in Nonstoichiometric (Ba,Ca)TiO3 and BaTiO3 Ceramics

Dislocation loops observed in nonstoichiometric and stoichiometric (Ba,Ca)TiO₃, and in stoichiometric BaTiO₃ sintered in a reducing atmosphere, were characterized by conventional transmission electron microscopy (TEM) under two-beam conditions and high-resolution TEM atomic structure analysis. Dislocation loops mostly lay on {100} planes with Burgers vectors of type 〈100〉. The dynamic behavior of these dislocation loops during the electron beam irradiation (EBI), however, was classified into two different types of dislocation loops: in A-site-excess (Ba,Ca)TiO₃, contrasts of dislocation loops faded completely away; in BaTiO₃ and B-site-excess (Ba,Ca)TiO₃, fine-line contrasts remained. Dislocation loops with Burgers vectors of type 1/2〈100〉 and the resultant crystallographic shear (CS) structure with a displacement vector of type 1/2〈110〉 after EBI were proposed to interpret residual line images. Disappearance of these line images in A-site-excess (Ba,Ca)TiO₃ strongly suggests preferential Ca ion site occupancy at the CS structure.     

Solubility of Silver and Palladium in BaTiO3

Silver, palladium, and their alloys are frequently used as electrode materials for BaTiO₃ (BT) based dielectrics. However, the electrodes and dielectrics usually are cofired at high temperatures, and silver and palladium can dissolve into the BT during cofiring. In the present study, the solubility of silver and palladium into BT after cofiring was determined. Three measurement techniques were used to determine solubility: chemical analysis, structural analysis, and dielectric analysis. The solubility of the silver in the BT was low, 450 ppm, after cofiring at 1290°C for 2 h in air. The diffusion distance of the silver ions into the BT was >5 μm. The solubility of the palladium in the BT was even lower, 50 ppm at 1290°C, and the diffusion distance was ∼1 μm. The solubility of both the silver and the palladium in the BT decreased as the oxygen partial pressure of the sintering atmosphere decreased. These results demonstrated that both silver and palladium solutes act as acceptors for BT.     

π-Rotation Faults in Hexagonal BaTiO3

Planar defects in the metastably retained h-BaTiO₃ exhibiting α-fringe pattern have been characterized via transmission electron microscopy (TEM). The eligible fault vectors were determined by adopting the invisibility criteria of 2πg·R = 0 or 2 n π augmented by high-resolution imaging. Three stacking faults, F₁, F₂, and F₃, of the extrinsic nature have been fully analyzed. The eligible fault vectors for faults F₁ and F₃ contained a basal component respectively of ⅓[0001] and ⅙[0001] and a common prismatic component of ⅓〈10[1-macr]0〉. However, only three of the 〈10[1-macr]0〉 vectors are the eligible prismatic component for the fault vectors R_F1=⅓[0[1-macr]11], ⅓[10[1-macr]1], and ⅓[[1-macr]101], and R_F3=⅙[02[2-macr]1], ⅙[2[2-macr]01], and ⅙[[2-macr]021] that have fulfilled the invisibility criteria. On the other hand, all fault vectors R_F21=⅙〈[4-macr]223〉 for fault F₂, containing six vectors of the 〈[2-macr]110〉 family, is eligible. Unlike the faults of πR_F=⅙〈[2-macr]203〉 found in the D0₁₉ intermetallics of Ni₃Sn and Co₃W, neither fault F₁ nor F₃ is the π-rotation type. Fault F₂, however, is a π-rotation fault since a 60°-rotation clockwise about [0001] has produced another eligible fault vector.     

Investigation of Lamella-Twinned Crystallites and Dislocations in Paraelectric Phases of Bi2O3-Doped BaTiO3

Defects in the paraelectric phases of BaTiO₃ doped with Bi₂O₃ were analyzed by transmission electron microscopy under two-beam conditions. (111) twin structures were characterized by selected area diffraction and bright-field images. The orientation relationships of the (111) twins were determined using stereograms. Lamella-twinned crystallites included in the paraelectric phases were found in this system. Pure wedge fringes were analyzed in these grains using electron diffraction and imaging techniques. Double diffraction was observed in the overlapped regions of the matrix and the microtwin in the [113] direction, and high-density dislocation loops were seen in some grains. Weak-beam dark-field microscopy techniques were used to observe the dislocation loops, which predominately lay on {100} crystal planes with Burgers vectors a 〈100〉, and were found to be pure edge dislocations. Some dislocations were transformed into crystallographic shear planes.     

Core-Shell Structures in ZrO2-Modified BaTiO3 Ceramic

Pure BaTiO₃ exhibits a paraelectric-to-ferroelectric phase transition at 130°C. When stoichiometric BaTiO₃ is combined with 10 mol% ZrO₂, the relative permittivity (ε) changes to a broad, relatively insignificant temperature dependence, and the Curie point, T _c , is not sharply defined. However, the transition sharpens at T = 95°C when these samples are sintered for a longer period of 60 h. SEM, EDAX analysis coupled with TEM observation gives three types of core-shell structures of different microstructural characteristics which are related to the diffuse phase transition. Chemical inhomogeneity, due to Zr⁴⁺ distribution in the core-shell structure, is proposed to account for the diffuse phase transition behavior.     

Characterization of Internal Pores in Hydrothermally Synthesized BaTiO3 Particle by Transmission Electron Microscopy

Hydrothermally synthesized barium titanate, BaTiO₃ (commercially available), has internal pores in small particles. The three-dimensional structures of the pores were successfully observed using transmission electron microscopy (TEM) and reconstructed by a tomography system. The behavior of the internal pore is observed in situ with increasing temperature on the thermal stage of a TEM device. We succeed in recording the movement of pores and small grains. At >1128 K, some pores move out from the particle's surface during TEM observation. The temperature roughly agrees with the temperature at which the density of BaTiO₃ powder sharply increases. During observation with increasing temperature, a thin layer appeared on the particle's surface at >73 K and then disappeared at 1193 K.     

Faceting of High-Angle Grain Boundaries in Titanium-Excess BaTiO3

The grain boundaries in BaTiO₃ with excess Ti of 0.5, 0.3, and 0.1 at.% sintered at 1300° or 1250°C have been examined by scanning electron microscopy (SEM), electron backscattered diffraction pattern (EBSP), and transmission electron microscopy (TEM). In the 0.1% Ti-excess specimen, large grains growing abnormally form high-angle grain boundaries when they impinge on each other as verified by EBSP. A large fraction of these grain boundaries are faceted with hill-and-valley shapes. In the 0.5% Ti-excess specimen, large grains growing abnormally are elongated in the directions of their {111} double twins. These grains often form flat grain boundaries parallel to their {111} planes with the fine matrix grains, and the grain-boundary segments between the large impinging grains with high misorientation angles are often also parallel to the {111} planes of one of the grains. These grain boundaries are expected to be singular. Most of the grain boundaries between the randomly oriented fine-matrix grains in the 0.3 at.% Ti-excess specimen are also faceted with hill-and-valley shapes at finer scales when observed under TEM. The facet planes are parallel to {111}, {011}, and {012} planes of one of the grain pairs and are also expected to be singular. These high-angle grain boundaries lying on low index planes of one of the grain pairs are similar to those observed in other oxides and metals.     

Solid Solubility of Holmium, Yttrium, and Dysprosium in BaTiO3

The solid solubility of R ions (R = Ho³⁺, Dy³⁺, and Y³⁺) in the BaTiO₃ perovskite structure was studied by quantitative electron-probe microanalysis (EPMA) using wavelength-dispersive spectroscopy (WDS), scanning electron microscopy (SEM), and X-ray diffractometry (XRD). Highly doped BaTiO₃ samples were prepared using mixed-oxide technology including equilibration at 1400° and 1500°C in ambient air. The solubility was found to depend mainly on the starting composition. In the TiO₂-rich samples a relatively low concentration of R incorporated preferentially at the Ba²⁺ lattice sites (solubility limit ∼Ba_0.986R_0.014Ti_0.9965(V^"_Ti^")_0.0035O₃at 1400°C). In BaO-rich samples a high concentration of R entered the BaTiO₃ structure at the Ti⁴⁺ lattice sites (solubility limit ∼BaTi_0.85R_0.15O_2.925(V_O^••)_0.075at 1500°C). Ho³⁺, Dy³⁺, and Y³⁺incorporated preferentially at the Ti⁴⁺ lattice sites stabilize the hexagonal polymorph of BaTiO₃. The phase equilibria of the Ho³⁺–BaTiO₃ solid solutions were presented in a BaO–Ho₂O₃–TiO₂phase diagram.     

Effect of PO2 on Bulk and Grain Boundary Resistance of n-Type BaTiO3 at Cryogenic Temperatures

Complex impedance analysis at cryogenic temperatures has revealed that the bulk and grain boundary properties of BaTiO₃ polycrystals are very sensitive to the oxygen partial pressure during sintering. Polycrystals sintered at P _O2 as low as 10⁻¹⁵ atm were already electrically heterogeneous. The activation energy of the bulk conductivity in the rhombohedral phase was found to be close to that of the reduced undoped single crystal (i.e., 0.093 eV). The activation energy of the grain boundary conductivity increases with the temperature of the postsinter oxidation treatment from 0.064 to 0.113 eV. Analysis of polycrystalline BaTiO₃ sintered in reducing atmosphere and then annealed at P _O2= 0.2 atm has shown that the onset of the PTCR effect occurs at much higher temperatures than expected in the framework of the oxygen chemisorption model. The EPR intensity of barium and titanium vacancies increases after oxidation at T > 1000°C. A substantial PTCR effect is achieved only after prolonged annealing of the ceramic in air at temperatures as high as 1200–1250°C. This result suggests that the PTCR effect in polycrystalline BaTiO₃ is associated with interfacial segregation of cation vacancies during oxidation of the grain boundaries.     

Dielectric Properties of Electrophoretically Deposited and Isothermally Pressed BaTiO3 Thick Films

Thick BaTiO₃ films were prepared on platinum metallic foils by the electrophoretic deposition (EPD) technique using BaTiO₃ nanoparticles. In order to increase the density of the thick film, the green film was pressed under an isostatic pressure of 200 MPa before high-temperature sintering. The microstructures of deposited films were examined using X-ray diffraction and scanning electron microscopy techniques. Dielectric properties of the thick films were investigated. As the films grow thicker, the dielectric constant increases gradually and the dielectric loss decreases slightly. The experimental results indicate that isostatic pressing is an effective method to process thick films with dense microstructure and better dielectric properties.     

钛酸钡基厚薄膜PTCR的研究

介绍了钛酸钡基厚、薄膜PTCR的制备方法与研究进展。射频磁控溅射和溶胶-凝胶成膜技术是制备陶瓷PTCR薄膜的较理想的方法。陶瓷PTCR厚膜技术由于具有成本低和较好的市场前景受到人们的高度重视。目前钛酸钡基PTCR厚、薄膜技术的研究已经取得了较大的进步和发展。PTCR膜材正向着低室温电阻、高升阻比和集成化的方向发展。     

Microstructural Changes during the Reduction/Reoxidation Process in Donor-Doped BaTiO3 Ceramics

Microstructural changes occurring during oxidation of the reduced form of donor-doped BaTiO₃ (Ba_{1− X} D _X ^.Ti_{1− X} ⁴⁺Ti _X ³⁺O₃) and during reduction of the oxidized form of donor-doped BaTiO₃ (Ba_{1− X} D _X ^.Ti_{1− X /4}⁴⁺( V _Ti^) _{X /4}O₃) were studied using TEM. Samples of both types of solid solutions, containing different La concentrations (from 2 to 20 mol% La), were prepared by sintering under reducing conditions and in air, respectively. The reduced form of donor-doped BaTiO₃ was oxidized by annealing at high temperatures (1150° and 1350°C) in air, while the oxidized form was reduced by annealing under reducing conditions. Because of oxidation of the reduced phase of donor-doped BaTiO₃, the Ti-rich phases Ba₆Ti₁₇O₄₀ and BaLa₂Ti₄O₁₂ were precipitated. Reduction of the oxidized form caused precipitation of the Ba-rich phase Ba₂TiO₄ preferentially inside the matrix grains. All precipitates had well-defined orientational relationships with the perovskite matrix.