Preface to Special Issue on Novel Semiconductor-biochemical Sensors

<正>Since 2020, the global outbreak and continued evolution of the COVID-19 pandemic have brought the concepts of nucleic acid, antigen-antibody, gene sequencing, and other biochemical testing into ordinary families. In this regard, novel semiconductor-biochemical sensors that convert biochemical information into monitorable electrical and optical signals according to specific rules have become increasingly important and indispensable. These sensors deeply fuse the technical advantages of s...     

Preface: Special Issue on Large Scale Integration

The interests of the solid-state circuits community have been focused on integrated circuits during the past several years. Through a potent combination of technological and economic factors, the development of digital integrated circuits has progressed at a particularly rapid rate during this petiod. At present, large scale integration represents the region of singular importance in the field of digital integrated circuits. Typically, large scale integration consists of the combination of a multiplicity of circuit elements within a basic cell and the further combination of a multiplicity of cells in a monolithic structure to form a highly complex integrated circuit or an integrated equipment component. A most significant feature of an integrated equipment component is the uniquely intimate interdependence of its material, device, circuit, and system-design considerations. Recognizing this interdependence, the central position of large scale integration in electronics and its salient importance in solid-state circuits, the purpose of this issue is to act as an expose of advanced work being done in this field.     

Preface to the Special Issue on Si-Based Materials and Devices

It has been well known that the development of microelectronic and integrated circuit (IC), mainly based on silicon materials, have changed the way of our life dramatically and accelerated the development and innovation of new technologies. With the increase of integration density in ICs, the gate lengths of transistors are now scaled down to 7 nm, leading to fundamental challenges to keep up with the Moore’s law. One possible solution is to integrate optical circuits into the Si microelectronic platform to achieve high density electronic–photonic integration. This will combine the advantages of photons in energy-efficient and high bandwidth data transmission with those of electrons in high-speed data processing and high performance logics. It will thereby overcome the interconnect bottleneck and achieve high functionality as an extension to Moore’s law. In this opto– electro integration system, monolithic integrated group IV lasers are of great interest. However, the indirect bandgap nature of crystalline silicon limits its application in optoelectronics. In recent years, many researchers have tried to use the nano-sized Si structure or introduce group IV alloys, such as Ge, GeSn or other compounds, to address the light source issue and establish all Si-based electronic–photonic ICs.     

Preface to the Special Issue on Flexible Energy Devices

Flexible energy devices are the building blocks for next-generation wearable electronics.Flexible energy devices are expected to have multiple functions,such as energy conver-sion from light to electricity and vice versa,energy genera-tion from triboelectric,energy storage and so on.These func-tions can be efficiently realized by solar cells,light-emitting di-odes (LEDs),triboelectric nanogenerators (TENG),batteries and supercapacitors,etc.The flexible energy devices can be in-tegrated into flexible,wearable,and/or portable platforms to enable wide application prospects in the fields of informa-tion,energy,medical care,national defense,etc.However,flex-ible energy devices face more challenges when compared to their rigid counterparts,which requires more breakthroughs and research efforts on fabrication techniques,materials innov-ation,novel structure designs,and deep physical understand-ings.     

Introduction to the Special Issue on the 2007 Symposium on VLSI Circuits

The Special Issue on the 2007 Symposium on VLSI Circuits includes two special invited papers and 30 expanded papers from the symposium that cover analog, digital, memory, and wireless and wireline communications.     

“大气气溶胶光学性质”专辑前言

大气气溶胶是悬浮于空气中的固体和液体微小颗粒,其对太阳光的散射和吸收是造成大气能见度降低的主要原因。大气气溶胶还可以通过与太阳光的相互作用影响辐射平衡,从而影响气候。因此,对气溶胶光学性质的深入理解,是了解其气候和环境效应的基础。气溶胶的光学性质与其多种理化性质紧密相关。     

Preface to the Special Issue on Semiconductor Optoelectronic Integrated Circuits

The family of perovskite materials derived from the crystal structure of the mineral CaTiO3,which was first reported in 1839[1].Then a series of materials with perovskite structure were discovered.Most perovskite materials have the ABX3 stoichiometry,in which A is monovalent or divalent cation,B is divalent or tetravalent cation,and X is monovalent or divalent anion.Perovskite materials play important roles in various functional devices due to their unique optical,electronic and optoelectronic properties.Inorganic perovskites such as BaTiO3 and PbTiO3 have been widely used in ferroelectric and piezoelectric devices,actuators,capacitors,and nonlinear optical devices[2].The emergence of organic–inorganic hybrid perovskites such as CH3NH3PbI3 triggers a new wave of research about perovskite-based devices,such as solar cells,light-emitting diodes(LEDs),photodetectors,lasers,and field-effect transistors[3,4].Motivated by the outstanding performance of perovskite materials,a variety of perovskite derivatives were developed,such as two-dimensional perovskites,double perovskites,and vacancy-ordered perovskites[5,6].