Structure-Property Phase Diagram of BaZrxTi1−xO3 System

In the course of searching environmental friendly lead-free relaxor ferroelectrics a complete phase diagram of barium zirconate titanate, Ba(Zr _x Ti_{1− x} )O₃ system with compositions 0.00≤ x ≤1.00 has been developed based on their dielectric behavior. It has been shown that BaZr _x Ti_{1− x} O₃ system depending on the composition, successively depicts the properties extending from simple dielectric (pure BaZrO₃) to polar cluster dielectric, relaxor ferroelectric, second order like diffuse phase transition, ferroelectric with pinched phase transitions and then to a proper ferroelectric (pure BaTiO₃). A comprehensive structure–property correlation of BaZr _x Ti_{1− x} O₃ ceramics has been studied to understand the various ferroelectric phenomena in the whole phase diagram.     

Sintering and Microwave Dielectric Properties of the LiNb0.63Ti0.4625O3 Ceramics with the B2O3–SiO2 Liquid-Phase Additives

The effect of B₂O₃–SiO₂ liquid-phase additives on the sintering, microstructure, and microwave dielectric properties of LiNb_0.63Ti_0.4625O₃ ceramics was investigated. It was found that the sintering temperature could be lowered easily, and the densification and dielectric properties of LiNb_0.63Ti_0.4625O₃ ceramics could be greatly improved by adding a small amount of B₂O₃–SiO₂ solution additives. No secondary phase was observed for the ceramics with B₂O₃–SiO₂ additives. With the addition of 0.10 wt% B₂O₃–SiO₂, the ceramics sintered at 900°C showed favorable microwave dielectric properties with ɛ_r=71.7, Q × f =4950 GHz, and τ_f=−2.1 ppm/°C. The energy dispersive spectra analysis showed an excellent co-firing interfacial behavior between the LiNb_0.63Ti_0.4625O₃ ceramic and the Ag electrode. It indicated that LiNb_0.63Ti_0.4625O₃ ceramics with B₂O₃–SiO₂ solution additives have a number of potential applications on passive integrated devices based on the low-temperature co-fired ceramics technology.     

Microwave Dielectric Properties of a New A5B4O15-Type Cation-Deficient Perovskite Ba2La3Ti3TaO15

High dielectric constant and low loss ceramics with composition Ba₂La₃Ti₃TaO₁₅ have been prepared by a conventional solid-state ceramic route. This compound adopts A₅B₄O₁₅ cation-deficient hexagonal perovskite structure. The dielectric properties of dense ceramics sintered in air at 1520°C have been characterized at microwave frequencies. It shows a relative dielectric constant of ∼45, quality factor Q _u× f of ∼26 828 GHz and temperature variation of resonant frequency of −0.97 ppm/°C.     

Preparation and dielectric properties of B2O3–Li2O-doped BaZr0.35Ti0.65O3 ceramics sintered at a low temperature

BaZr_0.35Ti_0.65O₃ (BZT) ceramics have been fabricated via a traditional ceramic process at a relatively low sintering temperature using liquid-phase sintering aids B₂O₃ and Li₂O. The dielectric properties of BZT ceramics have been investigated with the emphasis placed on the dielectric properties under an applied dc electric field. The temperature-dependent dielectric constant reveals that the pure BZT and B₂O₃–Li₂O-doped BZT ceramics all have a typical relaxor behavior and diffuse phase transition characteristics. The temperature-dependent dielectric constant under the applied dc electric field shows that the Curie temperature is slightly shifted to higher temperature and the peaks are suppressed and broadened. The dielectric loss is still under 0.005 and tunability is above 20% at an applied dc electric field of 30 kV/cm.     

Ferroelectric and Piezoelectric Properties of Na1−xBaxNb1−xTixO3 Ceramics

Piezoelectric ceramics Na_{1− x} Ba _x Nb_{1− x} Ti _x O₃ with low BaTiO₃ concentrations x have been prepared by the solid-state reaction method, and their ferroelectric and piezoelectric properties have been studied. The ceramics are classic ferroelectrics when x ≤0.10, and the ferroelectric–paraelectric phase transition becomes diffusive when x ≥0.15. A low doping level of BaTiO₃ changes the NaNbO₃ ceramics from antiferroelectric to ferroelectric. With the increase in BaTiO₃ doping level, the Curie temperature of ceramics decreases linearly and the remnant polarization and coercive field also decrease, while their dielectric constant increases. Na_0.9Ba_0.1Nb_0.9Ti_0.1O₃ ceramics show the largest piezoelectric constant d ₃₃ (147 pC/N) and good sinterability, suggesting that it is a good candidate for lead-free piezoelectric ceramics.     

Effects of Ba6Ti17O40 on the Dielectric Properties of Nb-Doped BaTiO3 Ceramics

The dielectric properties, including the DC breakdown strength, of 1 mol% Nb⁵⁺-doped BaTiO₃ ceramics with different quantities of excess TiO₂ have been investigated. The breakdown strength was found to decrease with increasing TiO₂ content, but could not be readily explained by relative density and grain size effects. The decrease in the breakdown strength from a stoichiometric BaTiO₃ composition to samples with excess TiO₂ is believed to be due to the field enhancement effect (up to a factor of 1.40) at the BaTiO₃ matrix because of the presence of a Ba₆Ti₁₇O₄₀ second phase. The thermal expansion coefficient mismatch between the BaTiO₃ matrix phase and the Ba₆Ti₁₇O₄₀ phase may also result in a low breakdown strength. The dielectric properties of the pure Ba₆Ti₁₇O₄₀ phase were also investigated and are reported herein.     

Doped Ca(Ca1/4A2/4Ti1/4)O3 (A=Nb, Ta) Dielectrics for Microwave Telecommunication Applications

Ca(Ca_1/4A_2/4Ti_1/4)O₃ (A=Nb, Ta) dielectric resonator materials have been prepared by the solid-state ceramic route. The effects of various amounts of di-, tri-, tetra-, penta-, and hexavalent impurities on the structure, microstructure, density, and microwave dielectric properties of the complex perovskites have been investigated. The structure of the parent materials remained unchanged while slight increase in density was observed with a small amount of certain dopants. An improvement in dielectric constant, quality factor, and temperature coefficient of resonant frequency was observed with the doping of small amounts of MgO, ZnO, NiO, CuO, Co₃O₄, Cr₂O₃, SnO₂, and Sb₂O₅. A correlation between the microwave dielectric properties of Ca(Ca_1/4A_2/4Ti_1/4)O₃ (A=Nb, Ta) ceramics and ionic radius of the dopant has been observed. The reported ceramics are potential candidates for dielectric resonator applications in wireless communication devices operating in the S and C bands.     

Diffuse Ferroelectric Phase Transition and Relaxor Behaviors in Ba-Based Bismuth Layer-Structured Compounds and La-Substituted SrBi4Ti4O15

The dielectric characteristics of BaBi₂Nb₂O₉, BaBi₄Ti₄O₁₅, BaBi₈Ti₇O₂₇, and La-substituted SrBi₄Ti₄O₄ were investigated to discuss their ferroelectric phase transition and relaxor behaviors. BaBi₂Nb₂O₉ showed typical relaxor behaviors, and a shift of T _m with increasing frequency was observed in BaBi₄Ti₄O₁₅ and SrBi_{4− x} La _x Ti₄O₁₅ ( x =0.8, 1.0) but they underwent a real paraelectric–ferroelectric phase transition on zero-field cooling, while BaBi₈Ti₇O₂₇ showed a normal ferroelectric nature. The reduced concentration and weakened coupling of the dipoles related to A-site bismuth are believed to be responsible for the appearance of short-range electric ordering and the relaxor behaviors in these bismuth layer-structured compounds.     

Ba2Ti9O20 as a Microwave Dielectric Resonator

Microwave measurements of Ba₂Ti₉O₂₀ show that this ceramic is uniquely suited for dielectric resonators. (Suitable ceramics should have a high dielectric constant K , a low dielectric loss (high Q ), and a low temperature coefficient of resonant frequency, τ.) At 4 GHz, Ba₂Ti₉O₂₀ resonators have Q >8000, K = 39.8, and τ=2 ppm/°C. Measurements of Q and τ were made on unmetallized ceramic resonator disks positioned in a waveguide; K was measured using a dielectric post resonator technique. From 4 to 10 GHz, Q approaches that for a copper waveguide cavity, whereas the temperature coefficient is typically 8 times lower.     

Microwave Dielectric Properties and Low-Temperature Sintering of Ba0.60Sr0.40TiO3 Ceramics

In the present work, the sintering behaviors and dielectric properties of Ba_0.60Sr_0.40TiO₃ (BST) ceramics with the addition of BaCu(B₂O₅) were investigated in detail. The results indicated that the addition reduced the sintering temperature of BST by about 500°C. It was suggested that a liquid phase BaCu(B₂O₅) assisted the densification of BST ceramics at lower temperatures. For a low-level BaCu(B₂O₅) addition (2.0 mol%), the BST sample sintered at 950°C for 5 h displayed good dielectric properties, with a moderate dielectric constant (ɛ=2553) and a low dielectric loss (tan δ=0.00305) at room temperature and at 10 kHz. The sample showed 45.9% tunability at 10 kHz under a dc electric field of 30 kV/cm. At the frequency of 0.984 GHz, BST-added 2.0 mol% BaCu(B₂O₅) possessed a dielectric constant of 2204 and a Q value of 146.7.     

Study of Structural and Electrical Properties of Conventional Furnace and Microwave-Sintered BaZr0.10Ti0.90O3 Ceramics

Structural, dielectric, piezoelectric, and ferroelectric properties of Zirconium-doped barium titanate (BaZr_0.10Ti_0.90O₃) ceramics prepared by microwave (MWS) and conventional (CS) sintering process are compared. X-ray diffraction and Raman spectroscopy indicate clearly the structural changes and confirm the effective diffusion of zirconium with the MWS technique to form BZT. Scanning electron microscopy reveals a fine grain, and a dense microstructure in the MWS ceramics processed under 4 h of cycle time (including heating, cooling, and holding time) in comparison with CS requiring 22 h. At room temperature the microwave sintered samples exhibit improved electrical properties exhibiting higher resistivity, higher dielectric constant, a lower dielectric loss, and a reduced dependence on frequency. Impedance and electric modulus spectroscopy analysis in the frequency range (40 Hz–1 MHz) and high-temperature range (573–873 K) suggests two relaxation processes attributed to bulk and grain boundary effects in the impedance plots for the both MWS and CS ceramics. The microwave-sintered BZT ceramics are found to be more attractive for room temperature device applications with improved properties, however, at higher temperatures they tend to degrade in comparison with the CS ceramics.     

Enhancement of Giant Dielectric Response in CaCu3Ti4O12 Ceramics by Zn Substitution

Zn-substituted CaCu₃Ti₄O₁₂ ceramics were synthesized by solid-state sintering. Their microstructures and dielectric properties were investigated. Ca(Cu_{1− x} Zn _x )₃Ti₄O₁₂ single-phase structures were obtained up to x =0.1, and the Cu⁺/Cu²⁺ and Ti³⁺/Ti⁴⁺ mixed-valent structure was enhanced with increasing Zn substitution. The giant dielectric response was significantly enhanced by Zn substitution. The dielectric constant increased with increasing x , and a giant dielectric constant plateau as high as ∼9 × 10⁴ was achieved for x =0.1 at 10 kHz, while that for x =0 was ∼3 × 10⁴. The enhanced giant dielectric response was profoundly concerned with the modified mixed-valent structure.     

Bismuth/Samarium Cosubstituted Ba6−3xNd8+2xTi18O54 Microwave Dielectric Ceramics

Modification of the microwave dielectric properties in Ba_{6−3 x} Nd_{8+2 x} Ti₁₈O₅₄ ( x = 0.5) solid solutions by Bi/Sm cosubstitution for Nd was investigated. A large increase in the dielectric constant and near-zero temperature coefficient combined with high Qf values were obtained in modified Ba_{6−3 x} Nd_{8+2 x} Ti₁₈O₅₄ solid solutions where an enlarged solid solution limit of Bi in Ba_{6−3 x} Nd_{8+2 x} Ti₁₈O₅₄ was observed. Excellent microwave dielectric characteristics (ɛ= 105, Qf = 4110 GHz, and very low τ_f) were achieved in the composition Ba_{6−3 x} (Nd_0.7Bi_0.18Sm_0.12)_{8+2 x} Ti₁₈O₅₄.     

Effect of Al2O3 and Bi2O3 on the Formation Mechanism of Sn-Doped Ba2Ti9O20

High-performance Ba₂Ti₉O₂₀ ceramics are attracting great attention, but their formation mechanism still is somewhat unclear. The present investigation shows that the formation of Ba₂Ti₉O₂₀ can be promoted strikingly by the participation of Bi₂O₃ and Al₂O₃. The effect of Bi₂O₃ on the formation of Ba₂Ti₉O₂₀ is attributed to the fact that migration of the involved reactants is accelerated by liquid which forms from the melting of Bi₂O₃ above 830°C. This migration, however, is not the only rate-limiting factor. A high potential-energy barrier, resulting from stress that arises along the crystal-structured layers, also heavily restricts the formation of Ba₂Ti₉O₂₀. The participation of Al₂O₃, on the other hand, can reduce the height of this potential-energy barrier and effectively improve the kinetics of the formation of Ba₂Ti₉O₂₀ by causing the formation of BaAI₂Ti₆O₁₆ crystals; these crystals intergrow with Ba₂Ti₉O₂₀ crystals and result in decreased stress.     

Preparation of Ba6−3xNd8+2xTi18O54 via Ethylenediaminetetraacetic Acid Precursor

Ba_{6−3 x} Nd_{8+2 x} Ti₁₈O₅₄ ceramic powders were synthesized by the modified Pechini method using ethylenediaminetetraacetic acid (EDTA) as a chelating agent. A purplish red, molecular-level, homogeneously mixed gel was prepared, and transferred into a porous resin intermediate through charring. Single-phase and well-crystallized Ba_{6−3 x} Nd_{8+2 x} Ti₁₈O₅₄ powders were obtained from pulverized resin at a temperature of 900°C for 3 h, without formation of any intermediate phases. Meanwhile, the molar ratio of EDTA to total metal cation concentration had a significant influence on the crystallization behavior of Ba_{6−3 x} Nd_{8+2 x} Ti₁₈O₅₄. The Ba_{6−3 x} Nd_{8+2 x} Ti₁₈O₅₄ ( x = 2/3) ceramics prepared via EDTA precursor have excellent microwave dielectric characteristics: ɛ= 87, Qf = 8710 GHz.     

The Li2O–Nb2O5–TiO2 Composite Microwave Dielectric Ceramics with Adjustable Permittivities

A group of new y M-phase/(1− y ) Li_{2+ x} Ti_{1−4 x} Nb_{3 x} O₃ composite ceramics with adjustable permittivities for low-temperature co-fired ceramic applications was initially investigated in the study. The 0.5 M-phase/0.5 Li_{2+ x} Ti_{1−4 x} Nb_{3 x} O₃ ( x =0.01, 0.02, 0.04, 0.06, 0.081) composite ceramics were first investigated to find the appropriate "Li₂TiO₃ss" composition ( x value). The best dielectric properties of ɛ_r=40.1, Q × f values up to 9318 GHz, τ_f=25 ppm/°C, were obtained for the ceramics composites at x =0.02. Based on the good dielectric properties, the suitable "Li₂TiO₃ss" composition with x =0.02 was mixed with the Li_1.0Nb_0.6Ti_0.5O₃ powder as the ratio of y "M-phase"/(1− y ) "Li₂TiO₃ss" ( y =0.2, 0.4, 0.5, 0.6, 0.8). By adjusting the y values, the group of composite ceramics could exhibit largely are adjustable permittivities varying from ∼20 to ∼60, while Q × f and τ_f values relatively good. Nevertheless, in this study, because there are interactions between the M-phase and Li₂TiO₃ss during sintering process, their microwave dielectric properties could not be predicted precisely by the empirical model.     

Characteristics of High-Q Microwave Dielectric Ceramics Nd(Co1/2Ti1/2)O3 With CuO Addition

We report the microwave dielectric properties and the microstructures of Nd(Co_1/2Ti_1/2)O₃ ceramics prepared by the conventional solid-state route. The prepared Nd(Co_1/2Ti_1/2)O₃ exhibits a mixture of Co and Ti showing a 1:1 order in the B site. Lowering the sintering temperature (as low as 1260°C) and promoting the densification of Nd(Co_1/2Ti_1/2)O₃ ceramics could be effectively achieved by adding CuO (up to 0.75 wt%). At 1350°C, Nd(Co_1/2Ti_1/2)O₃ ceramics with 0.5 wt% CuO addition possess a dielectric constant (ɛ_r) of 27.6, a Q × f value of 165 000 GHz (at 9 GHz), and a temperature coefficient of resonant frequency (τ_f) of −20 ppm/°C. By comparing with pure Nd(Co_1/2Ti_1/2)O₃ ceramics, incorporating additional CuO helps to render a dielectric material with a higher dielectric constant, a smaller τ_f value, and a 20% dielectric loss reduction, which makes it a very promising candidate for applications requiring low microwave dielectric loss.     

Investigation on the Microstructure and Dielectric Properties of BaTiO3–Nb2O5–Fe2O3 Materials Doped with La2O3

The influence of La₂O₃ doped on the microstructure and dielectric properties, including the phase structure, temperature dependence of permittivity, and the hysteresis loop of BaTiO₃–Nb₂O₅–Fe₂O₃ (BTNF) materials has been investigated in X-ray diffraction, SEM, and LCR analyzer, respectively. Experiments revealed that incorporation of proper content of La₂O₃ basically soluted in the lattice of BaTiO₃ and can control the grain-growth, reduce the dielectric loss of the BTNF materials. The development of microstructure promoted by the additives can result in the improvement of the dielectric constant. When the doping concentration of La₂O₃ was 3.846 wt%, the relative dielectric constant of the sample sintered at 1280°C only for 2 h could reach 4308, and improve the dielectric-temperature characteristics markedly. As a result, a novel Y5P can be achieved in the BTNF ceramics, which is very promising for practical use in Y5P multilayer ceramic capacitors.     

Microwave Dielectric Properties of Ti-Substituted Bi2 (Zn2/3Nb4/3)O7 Pyrochlores at Cryogenic Temperatures

Monoclinic pyrochlore ceramic Bi₂Zn_{2/3− x /3}Nb_{4/3−2 x /3}Ti _x O₇ (M–BZN) with x =0–0.4 is synthesized and the structure and microwave cryogenic properties are scrutinized. The dielectric constant (ɛ') and loss tangent (tanδ) of these ceramics are measured at a frequency of 3 GHz and temperature range of 15–300 K. With an increase in x value from 0 to 0.4, the dielectric constant and dielectric loss tangent of the investigated materials increase from 70 to 114 and 0.009 to 0.061, respectively. The Ti-substituted ceramics show an increase in dielectric constant with temperature, and the loss tangent shows a peak around 200 K. The peak in the dielectric loss tangent becomes more prominent with an increase of Ti content. The temperature where the dielectric loss tangent peak appears is found to be decreasing slightly with an increase of titanium doping. The observed dielectric characteristics of the titanium-doped M–BZN ceramics are attributed to the presence of the relaxation in these materials, originating from the disorder caused by the Ti⁴⁺ substitution.     

Effect of Al Doping on the Electric and Dielectric Properties of CaCu3Ti4O12

Al-doped CaCu₃Ti_{4− x} Al _x O_{12− x /2} (CCTO, x =0–0.1) ceramics were prepared by the solid-state reaction, and their electric and dielectric properties were investigated. Al doping has been shown to reduce the dielectric loss remarkably while maintaining a high dielectric constant. At x =0.06, the loss tangent (tan δ) was below 0.06 over the frequency range of 10²–10⁴ Hz, and the dielectric constant was 41 000 at 10 kHz. Impedance spectra indicated that Al doping increased the resistivity of the grain boundary by an order of magnitude. The improvement of the dielectric loss in Al-doped CCTO was attributed to the enhanced grain boundary resistivity.