无压浸渗制备梯度Si3N4/Al复合材料

采用Al-Mg合金无压渗入具有梯度孔隙分布的Si3N4多孔预制体,制得大尺寸、梯度Si3N4/Al复合材料;对复合材料的显微组织,相组成,硬度进行了观察和测定,分析了层间铝合金薄层在释放梯度层间应力的作用,并采用SHPB装置对梯度复合材料进行动态压缩试验.试验结果表明梯度复合材料层间结合紧密,硬度从HRA80.5逐层过渡到HRA61.5,主要组成相为Al,Si3N4,AlN和Mg2Si;梯度复合材料在动态压缩过程中表现出较高韧性.     

铝合金中硅含量对无压浸渗Si3N4/Al复合材料性能的影响

对不同硅含量的铝合金无压浸渗Si3N4预制件制备了Si3N4/Al复合材料,并对其性能进行了研究分析。结果表明:在无压浸渗过程中,Si3N4与铝合金发生了界面反应;Si3N4/Al复合材料的断裂机制以基体的韧性撕裂和增强体的脆性断裂为主;当无压浸渗用铝合金中硅质量分数从0增加到12%时,Si3N4/Al复合材料的硬度由69HRA增加到77HRA,抗弯强度由498MPa降低至333MPa。     

无压烧结Ti3SiC2/铝基复合材料组织与性能

MAX相具有独特的层状晶体结构,不但具备常用铝基复合材料外加陶瓷颗粒的性能特征,同时具有可与石墨媲美的摩擦性能.本文以Al粉、Si粉和典型MAX相Ti_3SiC_2为原料,采用冷压成型-无压烧结方法制备了Ti_3SiC_2/Al-Si复合材料,并通过金相显微镜、X射线衍射仪(XRD)、扫描电镜(SEM)、能谱仪(EDS)等分析手段,研究了烧结温度、Si元素含量对复合材料组织与性能的影响.研究表明:随着烧结温度从500℃提高到700℃,复合材料致密度先上升后下降,摩擦系数先降低后上升,硬度逐渐增大至最大值并基本保持稳定;随着Si质量分数从0增加到20.7%,复合材料的致密度逐渐降低,硬度逐渐增大,摩擦系数先降低后增大,晶粒尺寸随之下降,12.5%Si晶粒最为细小;烧结温度为650℃,Si元素质量分数为12.5%的铝基复合材料具有最低的摩擦系数0.18,相应的硬度为62 HV,致密度为92.12%.XRD物相和扫描电镜组织分析表明,复合材料的主要相组成为Al、Ti_3SiC_2,及由界面反应产生的Al_4C_3和Al的氧化产物Al_2O_3.     

反应烧结Si3N4/SiC复相陶瓷合成工艺优化的研究

利用反应烧结制备Si3N4结合SiC复合材料.设计了L9(34)正交试验方案,研究了原料中Si、添加剂Al2O3、Y2O3的含量对复合材料力学性能的影响,采用X射线衍射(XRD)和扫描电镜(SEM)对复合材料的相组成、断口形貌进行分析.结果表明,反应烧结后试样生成了颗粒状的α-Si3N4、针状或棒状的β-Si3N4和少量的Sialon,其中针状或棒状的β-Si3N4和SiC形成三维网络结构,提高了材料的力学性能.优化实验得到的试样力学性能显著提高,其中维氏硬度2205、抗弯强度410MPa、断裂韧性为8MPa·m1/2.     

纳米Si3N4及其与石墨、MoS2混合填充PTFE摩擦磨损性能研究

用M-2000型摩擦磨损试验机对纳米Si3N4及其与石墨、MoS2混合填充聚四氟乙烯(PTFE)复合材料在干摩擦条件下与45#钢对磨时摩擦磨损性能进行了研究,用洛氏硬度仪对其进行了测量,用扫描电子显微镜对磨损表面进行了观察.结果表明:纳米Si3N4的加入能提高PTFE复合材料的硬度和耐磨性,纳米Si3N4与MoS2混合填充会使PTFE复合材料的耐磨性能提高更多,特别是在载荷增大时其耐磨效果更好.纳米Si3N4能阻止PTFE复合材料中磨损微裂纹的产生,在纳米Si3N4的富聚区,磨损微裂纹较少,在纳米Si3N4的贫聚区,磨损的微裂纹较多.纳米Si3N4填充PTFE复合材料的摩擦系数比纯PTFE大,且随着载荷增加有所减小,石墨的加入可降低PTFE的摩擦系数.     

包埋法制备Zn-Ni渗层的结构及摩擦学行为研究

为了改善45钢表面摩擦磨损性能,采用粉末包埋法,在45钢表面制备出Zn-Ni渗层.利用X射线衍射仪(XRD)、扫描电子显微镜(SEM)、能谱仪研究了Zn-Ni渗层的厚度、显微形貌、物相组成和元素分布,采用显微维氏硬度计测定渗层的硬度,并通过多功能材料表面性能测试仪测试渗层与3种不同对摩球GCr15、Al2O3、Si3N4之间在不同正压力下的摩擦磨损性能.结果 表明:Zn-Ni渗层的厚度约为98 μm;渗层物相组成主要为FeZn10.98和FeZn8.87;Zn-Ni渗层截面硬度范围为358～615 HV0.98N;Zn-Ni渗层在往复摩擦试验中,与GCr15对摩球进行往复摩擦时主要是黏着磨损和磨粒磨损,与Al2O3对摩球进行往复摩擦时主要是磨粒磨损,与Si3N4对摩球进行往复摩擦时主要是摩擦化学过程.     

C/C复合材料Mo - Si-N系抗氧化涂层成分优化

以Mo粉和Si粉为原始粉末,采用熔浆法在C/C复合材料表面原位合成了Si3N4-MoSi2/Si-SiC(MSN)系多层抗氧化涂层,借助扫描电镜和X射线衍射仪等分析手段对涂层的相组成和微观组织进行表征,并对涂层的抗氧化性能进行了初步研究.结果表明:Si浆料中添加适量Al可有效地阻止液态Si渗入C/C基材内部,3%Al-Si涂层具有最好的阻止Si渗入作用;Al含量超过3%时,Si的渗入程度随Al含量的增加而加剧;涂层中MoSi2的理论含量超过50%时,MSN-C/C复合材料1 400℃的抗氧化性能随MoSi2含量的增加而显著下降;MSN30-C/C和MSN40-C/C复合材料均在1 200～1 400℃表现出相近的抗氧化能力,但只有MSN30-C/C复合材料表现出抗1 450℃氧化的能力.     

TiN/Si3N4纳米晶复合膜的微结构和强化机制

采用高分辨透射电子显微镜对高硬度的TiN/Si3N4纳米晶复合膜的观察发现,这类薄膜的微结构与Veprek提出的nc-TiN/a-Si3N4模型有很大不同：复合膜中的TiN晶粒为平均直径约10nm的柱状晶,存在于柱晶之间的Si3N4界面相厚度为0.5～0.7nm,呈现晶体态,并与TiN形成共格界面.进一步采用二维结构的TiN/Si3N4纳米多层膜的模拟研究表明,Si3N4层在厚度约＜0.7nm时因TiN层晶体结构的模板作用而晶化,并与TiN层形成共格外延生长结构,多层膜相应产生硬度升高的超硬效应.由于TiN晶体层模板效应的短程性,Si3N4层随厚度微小增加到1.0nm后即转变为非晶态,其与TiN的共格界面因而遭到破坏,多层膜的硬度也随之迅速降低.基于以上结果,本文对TiN/Si3N4纳米晶复合膜的强化机制提出了一种不同于nc-TiN/a-Si3N4模型的新解释.     

SiC/Al层状梯度复合材料的制备与抗毁伤特性

用真空热压法制备了SiC/Al层状梯度复合材料;采用热压扩散工艺,实现了不同SiC含量的复合材料间的有效连接.实验表明SiC/Al层状梯度复合材料制备时,添加纯铝过渡层有助于提高层间结合强度.通过穿甲试验对SiC/Al层状复合材料的抗毁伤性能进行了分析,结果表明所制备的SiC/Al层状复合材料具有比纯铝材料更为良好的抗毁伤性能.     

SiCp/Al复合材料微弧氧化膜的组织结构及性能

采用微弧氧化技术对SiC体积分数分别为17vol%和55vol%的两种SiCp/Al复合材料进行处理。分析了两种材料微弧氧化膜的组织、形貌、相组成,测定了膜层的粗糙度、显微硬度、结合力,考察了膜层的耐磨和耐蚀性。结果表明:SiC的含量对SiCp/Al复合材料微弧氧化膜的表面形貌、粗糙度、相组成、结合力及摩擦磨损性能均有影响。17vol%SiCp/2009Al复合材料的微弧氧化膜较55vol%SiCp/6061Al复合材料更平整,微孔大小更均匀。55vol%SiCp/6061Al复合材料的微弧氧化膜的粗糙度(3.308 μm)比17vol%SiCp/2009Al复合材料(2.140 μm)大,表面熔融物堆积更多。两种材料的微弧氧化膜中均含有Al、Si、O、C、W等元素。55vol%SiCp/6061Al复合材料的微弧氧化膜中Mullite(SiO₂-Al₂O₃)相、α-Al₂O₃相、β-Al₂O₃相较多。17vol%SiCp/2009Al复合材料的微弧氧化膜的结合(38.55 N)较55vol%SiCp/6061Al(11.5 N)复合材料好。55vol%SiCp/6061Al复合材料的微弧氧化膜摩擦系数较大,磨损较严重。微弧氧化处理能有效改善两种SiCp/Al复合材料的耐蚀性。      

Magnetic coupling in La0.67Ca0.33MnO3/La0.67Sr0.33CoO3/La0.67Ca0.33MnO3 sandwiches

La_0.67Ca_0.33MnO₃ (LCMO)/La_0.67Sr_0.33CoO₃ (LSCO)/LCMO trilayer films are fabricated on single-crystal substrates NdGaO₃ (110) and the interlayer coupling are investigated. Compared with LCMO single layer, sandwiches showed the enhanced metal-insulator transition temperature of LCMO layers. The magnetoresistance is dependent on spacer thickness and the peak value dramatically decreases when LSCO layer is thick enough because of shorting by the LSCO layer. The magnetic coercivity H_C shows a nonmonotonic behavior with changing spacer layer thickness and the waist-like hysteresis indicates that there is an indirect exchange coupling between the top and bottom LCMO layers across the spacer layer.     

Varistor properties of ZnO-Pr6O11-CoO-Cr2O3-Y2O3-In2O3 ceramics

The varistor properties of the ZnO-Pr₆O₁₁-CoO-Cr₂O₃-Y₂O₃-In₂O₃ ceramics were investigated for different concentrations of In₂O₃. The increase of In₂O₃ concentration slightly increased the sintered density (5.60-5.63 g/cm³) and slightly decreased the average grain size (3.4-2.9 μm). The breakdown field increased from 6023 to 14822 V/cm with increasing concentration of In₂O₃. The nonlinear coefficient increased from 17.6 to 44.6 for up to 0.005 mol%, whereas the further doping caused it to decrease to 36.8. In₂O₃ acted as an acceptor due to the donor concentration, which decreases in the range of 1.02 × 10¹⁷ to 0.24 × 10¹⁷/cm³ with increasing concentration of In₂O₃.     

Nanocrystallization of SrBi2Nb2O9 from glasses in the system Li2B4O7---SrO---Bi2O3---Nb2O5

Transparent glasses in the system (100−x)Li₂B₄O₇–x(SrO---Bi₂O₃---Nb₂O₅) (10≤x≤60) (in molar ratio) were fabricated by a conventional melt-quenching technique. Amorphous and glassy characteristics of the as-quenched samples were established via X-ray powder diffraction (XRD) and differential thermal analyses (DTA) respectively. Glass–ceramics embedded with strontium bismuth niobate, SrBi₂Nb₂O₉ (SBN) nanocrystals were produced by heat-treating the as-quenched glasses at temperatures higher than 500 °C. Perovskite SBN phase formation through an intermediate fluorite phase in the glass matrix was confirmed by XRD and transmission electron microscopy (TEM). Infrared and Raman spectroscopic studies corroborate the observation of fluorite phase formation. The dielectric constant (_r) and the loss factor (D) for the lithium borate, Li₂B₄O₇ (LBO) glass comprising randomly oriented SBN nanocrystals were determined and compared with those predicted based on the various dielectric mixture rule formalism. The dielectric constant was found to increase with increasing SBN content in LBO glass matrix.     

Syntheses of hollandite type Rb2Cr8O16, K2Cr2V6O16 and K2V8O16

Hollandite-type compounds, Rb₂Cr₈O₁₆, K₂Cr₂V₆O₁₆ and K₂V₈O₁₆, were synthesized under high P-T conditions up to 1200°C and 7GPa. The structural refinement using a single crystal of Rb₂Cr₈O₁₆ confirms that the structure is similar to that of K₂Cr₈O₁₆. Magnetic measurements indicate that Rb₂Cr₈O₁₆ is ferromagnetic below 295K, K₂Cr₂V₆O₁₆ paramagnetic down to 77K and K₂V₈O₁₆ has susceptibility anomaly at 175K. These compounds are all semiconductive and show discontinuities in temperature-resistivity curves at points corresponding to magnetic anomalies.     

PbSbBiS4-Sb2S3 and PbSbBiS4-Bi2S3 joins in the PbS-Sb2S3-Bi2S3 system

Phase equilibria along the PbSbBiS₄-Sb₂S₃ and PbSbBiS₄-Bi₂S₃ joins of the PbS-Sb₂S₃-Bi₂S₃ system have been studied for the first time using differential thermal analysis, X-ray diffraction, microstructural analysis, microhardness tests, and density measurements, and the phase diagrams of the joins have been mapped out. The joins are shown to be pseudobinary with limited series of terminal solid solutions. The solid solutions are p-type semiconductors.     

Microstructures of YBa2Cu3O7/La0.7Ca0.3MnO3 and La0.7Ca0.3MnO3/YBa2Cu3O7 bi-layers grown on (001)LaAlO3

Epitaxial YBa₂Cu₃O₇/La_0.7Ca_0.3MnO₃ (YBCO/LCMO) bi-layers and La_0.7Ca_0.3MnO₃/YBa₂Cu₃O₇ (LCMO/YBCO) bi-layers were grown on (001)LaAlO₃ by pulsed laser deposition, and their microstructures were compared by transmission electron microscopy investigation. In the YBCO(100 nm)/LCMO(150 nm) bi-layers, the LCMO layer consists of columnar grains of ~ 17 nm in diameter and contains mixed orientation domains of [100]_c, [010]_c and [001]_c. The YBCO layer is totally c-axis oriented and the YBCO lattices are tilted − 2.5° to + 2.5° as they grew on the rough surfaces of LCMO columnar grains. For the LCMO(140 nm)/YBCO(140 nm) bi-layers, the LCMO/YBCO interface is sharp and flat. The initial 12-nm thickness of the YBCO layer is composed of c-axis oriented domains, and the upper part of YBCO layer is [100] oriented. The LCMO layer was predominantly [001]_c oriented while [100]_c-oriented domains were occasionally observed.     

Vapour-liquid equilibria in the ternary mixtures N2---CH4---C2H6 and N2---C2H6---C3H8

A systematic study was performed with mixtures consisting of N₂, CH₄, C₂H₆ and C₃H₈, to investigate experimentally phase equilibria and caloric properties and to test the accuracy of thermodynamic correlations. The first part of this Paper reports results of T---p---x---y measurements on ternary systems in the range 20 < p < 120 bar and 140 < T < 220 K. The results are compared with data calculated by generalized equations of state.     

Characterization of YBa2Cu3O7/PrBa2Cu3O7 superlattices

We investigated the structural and superconducting properties ofc-axis oriented (YBa₂Cu₃O₇) _nY /(PrBa₂Cu₃O₇) _npr superlattices with thicknesses of the individual layers down to one unit cell (10nY1; 18>nPr 1). By transmission electron microscopy and X-ray diffraction we find an excellent structural quality of the samples, though the quantitative analysis shows the existence of defects. In superlattices with decoupled YBa₂Cu₃O₇ layers of two unit cell thickness we find a highT _c value of 75 K. We probed the flux line structure in the superlattices by measurements of the critical current density in magnetic fields. The experiments show that the flux-line dynamics is dominated by the movement of pancake vortices.     

Structural study of Sr0.3Ba0.7Nb2O6 and La0.030Sr0.255Ba0.700Nb2O6 ceramic systems

Sr_0.3Ba_0.7Nb₂O₆ (SBN) and La_0.030Sr_0.255Ba_0.700Nb₂O₆ (LSBN) ceramic compounds have been prepared using the traditional ceramic method at two different calcination temperatures (900 and 1000 °C) and later sintered both at 1400 °C. A study of the effects of the calcination temperatures and La substitution on the morphological, compositional, and structural properties of SBN and LSBN is presented using scanning electronic microscopy (SEM), energy dispersive spectroscopy (EDS), and X-ray diffraction (XRD) analysis. From Rietveld refinement processes, the XRD patterns were interpreted to evaluate such effects in the structural parameters and the site occupation factors of the heavy metals and oxygen atoms. The effect of the incorporation of La resulted in a 0.25% cell contraction and turned out to be higher than the 0.08% dilation effect produced by the increase of calcination temperature. The La ion with similar effective ionic radius and higher electronegativity is incorporated into the structure occupying the A₁ site just like the Sr ions in the SBN compound. Differences in the site occupation factors between the SBN and LSBN samples lead to substantial changes in the physical properties such as temperature of relative dielectric constant maximum, relative dielectric constant, and dielectric loss, correlated with the distortion and the relative orientation of the oxygen octahedra.     

The effect of Bi1.5Zn0.5Nb0.5Ti1.5O7 cover layer on the dielectric and tunable properties of Ba0.6Sr0.4TiO3/Bi1.5Zn0.5Nb0.5Ti1.5O7 bilayered thin films

Bi_1.5Zn_0.5Nb_0.5Ti_1.5O₇ (BZNT) thin films with different thicknesses as cover layers were deposited on the Ba_0.6Sr_0.4TiO₃ (BST) thin films on the Pt/Ti/SiO₂/Si substrates by radio frequency magnetron sputtering method. The microstructure, surface morphology, dielectric and tunable properties of BST/BZNT heterogeneous bilayered films were investigated as a function of the thickness of BZNT films and the effect of BZNT films on the asymmetric electrical properties of BST/BZNT bilayered films was discussed. It was found that BZNT cover layer significantly improved the leakage current and the dielectric loss, and the dielectric constant and tunability of BST/BZNT bilayered thin films simultaneously decreased with the increasing thickness of BZNT films. The BST/BZNT bilayered thin film with a 50 nm BZNT cover layer gave the largest figure of merit (FOM) of 33.48 with the upper tunability of 55.38%. The asymmetric electrical behavior of BST/BZNT bilayered films is probably related to an internal electric field caused by built-in voltages at Pt/BST and BZNT/Au interfaces.