层状SiO_2材料对PP性能的影响

采用硬脂酸与正硅酸乙酯制备了新型的层状材料SiY1、SiY2,并用X射线衍射(XRD)、差示扫描量热(DSC)表征了其结构,利用热重分析(TG)考察了其热稳定性。并采用DSC、XRD等测试手段考察了PP/SiY1和PP/SiY2的结晶形态和结晶行为,测定了维卡温度和力学性能。结果表明,SiY1和SiY2两种层状材料均能诱导PP晶型由α晶型向β晶型转变;PP/SiY1、PP/SiY2的冲击强度由纯PP的11.28kJ/m2分别提高到38.33kJ/m2和44.5kJ/m2;而弯曲强度和拉伸强度也没有明显下降;SiY2可使聚丙烯(PP)的结晶度明显提高。     

ACF负载TiO2光催化清除低浓度气态苯的实验研究

为有效清除密闭环境中低浓度气态苯,以钛酸丁酯为前驱物,采用sol -gel法和浸渍-提拉法制备了TiO2/ACF复合材料.采用正交试验研究了溶胶凝胶工艺参数中去离子水、无水乙醇、冰醋酸的加入量以及TiO2/ACF煅烧温度对ACF/TiO2光催化性能的影响,在动态试验装置中,考察了TiO2/ACF对低浓度气态苯清除效果,...     

嵌有纳米碳颗粒凝胶玻璃的制备及其发光特性

以磷酸三乙酯、硝酸铝和正硅酸乙酯为原料,通过它们的水解制备了ｘＡｌ_２Ｏ_３·ｘＰ_２Ｏ₅·１００ＳｉＯ_２（ｘ＝０．２５～３）凝胶．在６００℃对凝胶进行热处理,使其中的有机基团炭化,从而制备出了镶嵌有碳纳米颗粒的ｘＡｌ_２Ｏ_３·ｘＰ_２Ｏ_５·１００ＳｉＯ_２（ｘ＝０．２５,０．５）凝胶玻璃．在室温下以５３２ｎｍ激光（Ｎｄ：ＹＡＧ）激发,在 ６３０ｎｍ处有一强的发光峰,该发光现象是由镶嵌在凝胶玻璃中的纳米碳颗粒产生的．     

H2C2O4稳定剂对SOl-Gel法制备LiNbO3薄膜的影响

研究了分别以H2C2O，HNO3，HCOOH和CH3COOH作稳定剂的LiNbO3薄膜先驱液的稳定性，发现H2C2O4作稳定剂的先驱液的稳定性最好，用sol-gel法在Si(110)基板上制备了以H2C2O4作稳定剂的LiNbO3薄膜，并对LiNbO3薄膜进行了IR，XRD和SEM表征，结果表明，生成的LiNbO3为多晶，与HNO3相比，以H2C2O4作稳定剂制备的LiNbO3薄膜形貌较差。     

Dispersion characteristics of TiO2 particles coated with the SiO2 nano-film by atomic layer deposition

Deposition of SiO2 nanofilm on TiO2 particles using atomic layer deposition method is reported. The SiO2 film was prepared at the room temperature using the chemicals Si(OC2H5)4, C2H5N and H2O as precursor, catalyst and reactant gas, respectively. The thickness, composition and uniformity of the SiO2 coating on TiO2 surface were characterized by FESEM, HRTEM, EDS and XPS measurements. In HRTEM analysis, the growth rate was about 0.33 angstroms/cycle. EDS and XPS analysis showed the surface composition of TiO2 nanoparticles was silicon oxide. Zeta potential, particle size distribution and sedimentation test results indicated that dispersibility of coated nanoparticles was higher than that of uncoated nanoparticles because of the electrostatic repulsion between the SiO2-coated layers on the surface of TiO2 nanoparticles. These results suggested that the SiO2 coating could modify the surface characteristics of the TiO2 nanoparticles and improve the dispersibility of the TiO2 primary nanoparticles.     

Interaction of TEMAHf precursor with OH-terminated Si (001) surface: a first principles study

We performed a first principles study to investigate the interaction of tetrakis-ethylmethylaminohafnium (4[(C2H5)(CH3)N]Hf, TEMAHf) precursors with an OH-terminated Si (001) surface that is the initial stage of atomic layer deposition (ALD). When TEMAHf reacted on the OH-terminated Si surface, there were two reaction mechanisms. One was the reaction with one -OH, and the other was the reaction with two -OH's. When TEMAHf reacted with an -OH on the Si (001) surface, an ethylmethylamine ((C2H5)(CH3)NH, EMA) was produced as a by-product and the trikis-ethylmethylaminohafnium group (3[(C2H5)(CH3)N]Hf) was attached to the O atom of the -OH. There were five reaction sites for TEMAHf to react with two -OH's to form the dikis-ethylmethylaminohafnium group (2[(C2H5)(CH3)N]Hf): Inter-dimer, intra-dimer, inter-row, cross-dimer, and cross-row. The reaction with two -OH's on the inter-dimer, intra-dimer, and inter-row sites were more favorable than the reaction with one -OH. Since the inter-dimer reaction was the most favorable, the energy barrier on the inter-dimer site for the reaction of the trikis-ethylmethylaminohafnium group with -OH to form the dikis-ethylmethylaminohafnium group was calculated, and the result was 0.19 eV. An extra energy of 0.25 eV was needed to remove EMA from the surface. Four TEMAHf's reacted with the surface and these reactions were exothermic by -7.77 eV, and the calculated Hf coverage of the first-half ALD cycle was 1.67 x 10(14)/cm2.     

Permeation of solvents through disk type rice husk silica membrane modified with alkyl silylation reagents

Rice husk silica (RHS) which was obtained with thermal treatment of rice husk has the size of approximately 10 micrometer with 4-5 nm pore. RHS can be mold to a disk type membrane. The membrane may have submicron pore originated from the space among the particles, and the nano pores of the rice husk silica (RHS pore). Even it is difficult to adjust the size of the pores, we can suggest that the membrane shows different permeability for the organic/inorganic solvents if the affinity between the surface of the pores and the permeating molecule is changed. In this study, we investigated the permeation of the typical solvents such as water, ethanol and toluene to the RHS membranes sintered at 1100 degrees C, 1150 degrees C and 1200 degrees C and modified with triethoxymethyl silane (CH3)Si(C2H5O)3, diethoxydiemethyl silane (CH3)2Si(C2H5O)2 and ethoxytriemethyl silane (CH3)3Si (C2H5O). The result showed that permeability of original membranes for water (e.g., 1100 degrees C, 2.87 x 10(-3) mol/m2 s Pa) was larger than ethanol (1100 degrees C, 5.51 x 10(-4) mol/m2 s Pa) and toluene (1100 degrees C, 3.09 x 10(-4) mol/m2 s Pa) at the sintering temperatures. For the silane modified membranes, the permeability for water decreased drastically while those for ethanol and toluene increased.     

静电纺丝技术制备NiOZnTiO3TiO2同轴三层纳米电缆及其形成机制

采用静电纺丝技术, 通过改进实验装置, 在最佳的纺丝条件下制备了 [Ni(CH₃COO)₂+PVP]-[Zn(CH₃COO)₂+PVP]-[Ti(OC₄H₉)₄+CH₃COOH+PVP] 前驱体复合电缆, 在600℃下将其进行热处理, 制备出了NiO-ZnTiO₃-TiO₂同轴三层纳米电缆。采用热重-差热 (TG-DTA)、 X射线衍射(XRD)、 傅里叶变换红外光谱(FTIR)、 扫描电子显微镜(SEM)和透射电子显微镜(TEM)等分析技术对样品进行了表征。对NiO-ZnTiO₃-TiO₂ 同轴三层纳米电缆的形成机制进行了讨论。结果表明, 所得产物为NiO-ZnTiO₃-TiO₂同轴三层纳米电缆。芯层为NiO, 直径大约为(42.024±4.405) nm; 中间层为ZnTiO₃, 厚度大约为(55.385±7.681) nm; 壳层为TiO₂, 厚度大约为(70.747±7.373) nm。      

不同配比及其后处理方式对纳米TiO_2粒径的影响

利用超声溶胶-凝胶法制备纳米TiO2粉体,讨论了反应过程中不同配比、醇洗次数、干燥方式、煅烧方式对颗粒粒径的影响,用DSC-TG、XRD等仪器对其热性质、晶型结构进行表征,用谢乐公式计算粒子的平均粒径。结果表明,钛酸丁酯∶水∶无水乙醇∶冰醋酸的摩尔比为1∶3∶10∶1,pH值为2,超声醇洗3次,红外干燥,先升温至250℃保温1 h再加热至600℃恒温2 h得到的纳米TiO2的粒径最小。     

Surface modification and patterning using low-energy ion beams: Si-O bond formation at the vacuum/adsorbate interface.

Modification of hydroxyl-terminated self-assembled monolayer (HO-SAM) surfaces by collision of low-energy (15 eV) hyperthermal Si(CH3)3+ ions is shown to lead to Si-O bond formation and terminal trimethylsilyl ether formation. Modification was verified by in situ mass spectrometry using chemical sputtering with CF3+ ions (70 eV), ex situ secondary ion mass spectrometric analysis (12 kV Ga+ primary ion beam), and through X-ray photoelectron spectroscopy by monitoring Si (2s). The nature of the surface modification was further established by analysis of synthetic SAM surfaces made up of mixtures of the trimethylsilyl-11-mercapto-1-undecane ether and various proportions of the hydroxyl-terminated mercaptan (11-mercapto-1-undecanol). These mixed surfaces, as well as the spectroscopic data, indicate that ca. 30% of the hydroxyl chains are covalently modified at saturation coverage. Analogous surface transformations are achieved using Si(CH3)2F+ and Si(CH3)2C6H5+.     

CVD金刚石薄膜(111)与(100)取向生长的热力学分析

用非平衡热力学耦合模型计算了CVD金刚石薄膜生长过程中C2H2与CH3浓度之比[C2H2]/[CH3]随衬底温度和CH4浓度的变化关系,从理论上探讨了金刚石薄膜（111）面和（100）面取向生长与淀积条件的关系。在衬底温度和CH4浓度由低到高的变化过程中,[C2H2]/[CH3]逐渐升高,导致金刚石薄膜的形貌从（111）晶面转为（100）晶面。添加氧后C2H2与CH3浓度都将下降,但C2H2下降得更多,因而添加氧也使[C2H2]/[CH3]下降,从而有利于生长（111）晶面的金刚石薄膜。     

改性TiO2自洁净玻璃的制备与表征

用溶胶-凝胶法制备了表面镀有La—TiO2光催化薄膜的自洁净玻璃,并利用XRD,UV—Vis,SF等手段对La—TiO2光催化薄膜进行检测。结果表明：镧离子掺杂可以减少电子-空穴对的复合几率,提高量子效率,从而有助于光催化活性的增强。     

PT／SiO2精细复合材料的制备及其特性

利用溶胶－凝胶工艺成功地制备出了ＰＴ／ＳｉＯ２精细复合材料，通过ＸＲＯ，介电频谱和Ｒａｍａｎ光谱对复合样品的结构和性能进行了分析，最后用四波混频方法对的非线性光学性能进行了测量。     

Sol-gel synthesis of luminescent InP nanocrystals embedded in silica glasses

III-V semiconductor nanocrystals rarely exist as spherical inclusions inside glasses, due to difficulties during their preparation, such as high toxic reagents or fast oxidation under usual glass technology temperatures. In this letter a sol-gel method for synthesis of InP nanocrystals embedded in silica glasses was described. Gels were synthesized by hydrolysis of a complex solution of Si(OC2H5)4, InCl3.4H2O, and PO(OC2H5)3. Then, the gels were heated at 600 degrees C in the presence of H2 gas to form fine cubic InP crystallites. Raman spectrum showed an InP longitudinal-optic mode (342 cm(-1)) and a transverse-optic mode (303 cm(-1)). The size of InP nanocrystals was found to be from 2 to 8 nm in diameter by transmission electron microscopy. A strong photoluminescence with a peak at 856 nm was observed from InP nanocrystals embedded in silica glasses. The results suggest that it might be possible to synthesize other III-V semiconductor nanocrystals embedded in silica glasses through the sol-gel process.     

含铍碳化硅陶瓷先驱体聚铍碳硅烷的合成

以氢氧化铍、硫酸和乙酰丙酮为原料合成了乙酰丙酮铍(Be(acac)2).用乙酰丙酮铍和聚碳硅烷在加热的条件下反应一定时间,生成了树脂状的产物.反应中乙酰丙酮铍被消耗,生成产物熔点相对起始聚碳硅烷熔点升高.元素分析表明产物中含有铍元素,凝胶渗透色谱分析表明产物分子量相对起始聚碳硅烷向增大的方向发生变化.傅立叶红外光谱分析表明产物中主要存在如下结构:Si(CH3)2—CH2—,—Si(CH3)·(H)—CH2—.核磁共振1H-NMR分析表明反应物中Si—H键被消耗.根据分析结果推测了反应机理,Si—H键的消耗在产物的形成中起了重要作用.实验与理论分析表明先驱体产物是一种含铍聚碳硅烷,可以命名为聚铍碳硅烷(PBeCS).在1200℃的高温处理下产物作为先驱体可以转化为碳化硅陶瓷,元素分析表明碳化硅陶瓷中含有铍,是含铍碳化硅陶瓷.     

氢化碳化硅(SixC1-x∶H)薄膜发光特性和纳米线发光增强研究

氢化碳化硅薄膜作为一种宽带隙的半导体材料,具有优越的物理特性,其在光电子器件上的潜在应用引起了人们的兴趣。利用等离子增强化学气相沉积(PECVD)系统制备了一系列氢化碳化硅薄膜,通过改变反应前驱物及流量比调节薄膜的室温光致发光性质。实验发现在一定范围内随着流量比R(CH_4/SiH_4)的提高,氢化碳化硅薄膜的光致发光峰位蓝移且发光强度增强;同时反应前驱物中的氢会极大影响氢化碳化硅薄膜的发光强度。通过椭偏仪(Ellipsometer)测量了薄膜的光学常数,发现薄膜沉积速率随着流量比R的增加而降低;傅里叶红外光谱仪(FTIR)测试表明Si-C有序度随着流量比的增加而增大。同时研究了三维纳米线结构对多态碳化硅薄膜发光性质的影响。光致发光测试结果表明三维纳米线结构可以有效提高薄膜的光致发光强度。     

Characteristics of SiO2/Si3N4/SiO2 stacked-gate dielectrics obtained via atomic-layer deposition

An interpoly-stacked dielectric film with a SiO2/Si3N4/SiO2/Si (ONO) structure was prepared via the atomic-layer deposition method. The multilayer structure of the ONO film with triple interfaces was investigated via medium-energy ion scattering (MEIS). A few defects in the interface layer of the ONO structure were detected. From the X-ray photoelectron spectroscopy (XPS) results, it was presumed that the interface layer with defects in the MEIS result is due to the formation of an oxynitride layer on the unstable and rougher Si3N4 layer via. By measuring the I-V characteristics, the leakage current density and breakdown field of the ONO film were determined to be 3.4 x 10(-9) A/cm2 and 10.86 MV/cm, respectively. By estimation the C-V curve, the flat band (V(FB)) of the ONO film shifted to a negative voltage (-1.14 V), the dielectric constant (K(ONO)) of the ONO film was 5.79, and the effective interface-trapped charge density of the ONO film was about 4.96 x 10(11)/cm2.     

Shrunk lattice structure and interdiffusion characteristics of 5 nm thick Al(2)O(3) ultrathin films sputtered on silicon

We report that a 5?nm thick Al(2)O(3) film grown on Si(100) directly by sputtering exhibits strong (110) texture, accompanied by a shrunk lattice structure (Δd/d～-2.36%). The disordered nature of the film was confirmed by cross-sectional high-resolution transmission electron microscopy, implying the loosened microstructure responsible for enhanced interdiffusion. The oxygen-deficient Al(2+δ)O(3-δ)(δ>0) interdiffusion region with complex interfacial chemical valences was formed between the Al(2)O(3) film and Si substrate, reducing the insulator properties. Using depth profiling in situ x-ray photoemission spectroscopy, we quantitatively reveal the non-stoichiometry deviation of the Al/O ratio at the interdiffusion region. A nominal thickness of 5?nm is required to obtain an actual barrier thickness of approximately 1?nm.     

颗粒表面改性法制备PTC粉体的研究

本文介绍了一种通过液相颗粒表面改性技术添加二次掺杂物来制备ＰＴＣ粉体的新方法。即将烧结助熔剂Ａｌ２Ｏ３，ＳｉＯ２以及受主杂质ＭｎＯ采用溶液形式，包裹在ＢａＴｉＯ３基粉体颗粒表面进行改性，由此可以得到二次掺杂物Ａｌ２Ｏ３、ＳｉＯ２和ＭｎＯ分布均匀的ＰＴＣ粉体。     

镀膜浮法玻璃的风化性能

采用人工加速风化的方法研究了镀有SiO2薄膜的浮法玻璃的风化性能,并与相同风化条件下的浮法玻璃原片的表面状态进行了比对,从风化机理上进行了分析。红外反射光谱和扫描电镜分析结果表明,镀有SiO2薄膜的浮法玻璃和未镀膜玻璃随着风化温度和风化时间的增加,均呈现风化现象逐渐加重的现象。但前者风化程度明显低于后者,尤其当风化条件(70℃,75%RH,风化15d)恶劣时,镀膜玻璃表面只出现了小块斑点和红外光谱的略微变化;而未镀膜玻璃表面则出现大面积的侵蚀斑块,在红外谱图上不仅≡Si—O—Si≡特征峰发生位移,而且出现了C?O的特征峰。说明SiO2膜层能够很好地阻挡玻璃表面Na+与空气中H+、H3O+的交换,有效地抑制玻璃表面风化的发生。