Axial ion–electron emission microscopy of IC radiation hardness

A new system for performing radiation effects microscopy (REM) has been developed at Sandia National Laboratory in Albuquerque. This system combines two entirely new concepts in accelerator physics and nuclear microscopy. A radio frequency quadrupole (RFQ) linac is used to boost the energy of ions accelerated by a conventional Tandem Van de Graaff–Pelletron to velocities of 1.9 MeV/amu. The electronic stopping power for heavy ions is near a maximum at this velocity, and their range is 20 μm in Si. These ions therefore represent the most ionizing form of radiation in nature, and are nearly ideal for performing single event effects testing of integrated circuits. Unfortunately, the energy definition of the RFQ-boosted ions is rather poor ( a few %), which makes problematic the focussing of such ions to the submicron spots required for REM. To circumvent this problem, we have invented ion electron emission microscopy (IEEM). One can perform REM with the IEEM system without focussing or scanning the ion beam. This is because the position on the sample where each ion strikes is determined by projecting ion-induced secondary electrons at high magnification onto a single electron position sensitive detector. This position signal is then correlated with each REM event. The IEEM system is now mounted along the beam line in an axial geometry so that the ions pass right through the electron detector (which is annular), and all of the electrostatic lenses used for projection. The beam then strikes the sample at normal incidence which results in maximum ion penetration and removes a parallax problem experienced in an earlier system. Details of both the RFQ-booster and the new axial IEEM system are given together with some of the initial results of performing REM on Sandia-manufactured radiation hardened integrated circuits.     

Ion-induced electron emission monitoring of the structure and morphology evolution in HOPG

The temperature dependences of the ion-induced electron emission yield γ of highly-oriented pyrolytic graphite (HOPG) under high-fluence (10¹⁸-10¹⁹ ions/cm²) 30 keV Ar⁺ ion irradiation at ion incidence angles from θ = 0^o (normal incidence) to 80^o have been measured to trace both the structure and morphology changes in the basal oriented samples. The target temperature has been varied during continuous irradiation from T = −180 to 400 ^oC. The surface analysis has been performed by the RHEED and SEM techniques. The surface microgeometry was studied using laser goniophotometry (LGF). The dependences of γ(T) were found to be strongly non-monotonic and essentially different from the ones for Ar⁺ and N₂⁺ ion irradiation of the polygranular graphites. A sharp peak at irradiation temperature T_p ≈ 150 ^oC was found. A strong influence of electron transport anisotropy has been observed, and ion-induced microgeometry is discussed.     

Formation and annealing behavior of defect clusters in electron or He-ion irradiated Ti-rich Ti–Al alloys

In order to clarify the effect of He atoms on the formation and annealing behavior of defect clusters in Ti–Al alloys, a Ti–47 at.% Al intermetallic compound has been irradiated with electrons and He-ions. Helium-ion irradiation enhances the nucleation of defect clusters, especially of interstitial loops, at temperatures from 623 to 773 K in both γ-TiAl and ₂-Ti₃Al grains of the sample. However, there is little difference between the annealing temperature ranges of defect clusters in TiAl grains formed by He-ion or electron irradiation at 623 K. The dot-shaped clusters and interstitial loops grow scarcely during annealing, but are annihilated by annealing up to 923 K. Cavities are formed after irradiation with He-ions below 10 dpa at 773 K, but no cavities are formed by electron irradiation up to 30 dpa. The cavities in γ-TiAl and ₂-Ti₃Al grains survive after annealing even at 1053 K for 1.8 ks, keeping their density and diameter to be nearly the same as those in the as-irradiated grains.     

Plasmon excitation and electron promotion in the interaction of slow Na ions with Al surfaces

We studied the energy distributions of electrons emitted in the interaction of slow Na⁺ ions with polycrystalline Al surfaces. To study sub-threshold plasmon excitation we performed measurements as a function of emission angle which showed the excitation of bulk plasmons, confirming the kinetic nature of the excitation process.

Electron spectra show narrow transition lines due to Auger decay in vacuum of sodium projectiles excited in the 2p-shell by electron promotion in collisions with Al target atoms. Several previously unidentified transition lines could be attributed to the autoionization of doubly excited projectiles.     

Erosion of carbon fiber composites under high-fluence heavy ion irradiation

The ion-induced erosion, determining by sputtering yield Y and surface evolution including structure and morphology changes of the modified surface layers, of two commercial carbon fiber composites (CFC) with different reinforcement - KUP-VM (1D) and Desna 4 (4D) have been studied under 30 keV Ar⁺ high fluence (φt ∼ 10¹⁸-10²⁰ ion/cm²) irradiation in the temperature range from room temperature to 400 °C. Ion-induced erosion results in the changes of carbon fiber structure which depend on temperature and ion fluence. Monitoring of ion-induced structural changes using the temperature dependence of ion-induced electron emission yield has shown that for Desna 4 and KUP-VM at dynamic annealing temperature Т_а ≈ 170 °С the transition takes place from disordering at T < T_a to recrystallization at T > T_a. The annealing temperature Т_а is close to the one for polycrystalline graphites. Microscopy analysis has shown that at temperatures Т < T_a the etching of the fibers results in a formation of trough-like longitudinal cavities and hillocks. Irradiation at temperatures T > T_a leads to a crimped structure with the ribs perpendicular to fiber axis. After further sputtering of the crimps the fiber morphology is transformed to an isotropic globular structure. As a result the sputtering yield decreases for Desna 4 more than twice. This value is almost equal to that for KUP-VM, Desna 4, polycrystalline graphites and glassy carbons at room temperature.     

Feedback model of secondary electron emission in DC gas discharge plasmas

Feedback is said to exist in any amplifier when the fraction of output power in fed back as an input.Similarly,in gaseous discharge ions that incident on the cathode act as a natural feedback element to stabilize and self sustain the discharge.The present investigation is intended to emphasize the feedback nature of ions that emits secondary electrons(SEs)from the cathode surface in DC gas discharges.The average number of SEs emitted per incident ion and non ionic species(energetic neutrals,metastables and photons)which results from ion is defined as effective secondary electronemission coefficient(ESEEC,_Eg).In this study,we derive an analytic expression that corroborates the relation between_Eg and power influx by ion to the cathode based on the feedback theory of an amplifier.In addition,experimentally,we confirmed the typical positive feedback nature of SEEfrom the cathode in argon DC glow discharges.The experiment is done for three different cathode material of same dimension(tungsten(W),copper(Cu)and brass)under identical discharge conditions(pressure:0.45 mbar,cathode bias:-600 V,discharge gab:15 cm and operating gas:argon).Further,we found that the_Eg value of these cathode material controls the amount of feedback power given by ions.The difference in feedback leads different final output i.e the power carried by ion at cathode(P_i _C￠∣).The experimentally obtained value of P_i _C￠∣is 4.28 W,6.87 W and9.26 W respectively for W,Cu and brass.In addition,the present investigation reveals that the amount of feedback power in a DC gas discharges not only affect the fraction of power fed back to the cathode but also the entire characteristics of the discharge.     

Broadening effects in Auger neutralization of 130–430 eV Ar ions at Al surfaces

We present a model for electron emission from Al surfaces by Auger neutralization of 130–430 eV Ar⁺ ions, that includes the singular response of the metal conduction band to the abrupt change of the surface potential caused by electron capture by the incident ion. This effect, previously identified in X-ray studies, produces a broadening that plays a significant role in reproducing the higher energy part of the experimental electron kinetic energy distributions.