Van der Waals heterojunction ReSe2/WSe2 polarization-resolved photodetector

Polarization-resolved photodetectors,a significant branch of photodetection,can more effectively distinguish the target from the background by exploiting polarization-sensitive characteristics.However,due to the absence of intrinsic polarized absorption properties of many materials,there is still a great challenge to develop the high-performance polarization-resolved photodetectors.Here,we report a van der Waals heterojunction(vdWH)ReSe₂/WSe₂photodetector,which performs a high responsivity of~0.28 A/W and a high detectivity of 1.1×10¹²Jones under the illumination of 520 nm laser at room temperature.Remarkably,scanning photocurrent mapping(SPCM)measurements demonstrate the photoresponse of devices closely depend on the polarized angle of the incident light,indicating the effective polarized light detection.This work paves the way to develop high-performance polarization-resolved photodetectors based on two-dimensional(2D)materials.     

基于石墨烯-黑砷异质结构宽频段探测器

利用定点转移技术,制备出二维层状材料石墨烯-黑砷范德华异质结构的光电探测器制备,实现了从可见光-红外-微波的宽频段探测。其中在可见红外光辐射下,黑砷中产生的光激发电子-空穴对被分离并注入石墨烯,显著降低了半导体黑砷和金电极之间的势垒,从而实现了有效的光电流提取;在微波频段下,由于两种材料塞贝克系数差异产生光热电效应而激发非平衡载流子,零偏下形成光电流。研究结果为二维层状材料的带隙工程应用于光子和光电子领域铺平了道路。     

基于拓扑绝缘体异质结的宽带太赫兹探测器

二维材料中的新量子态对凝聚态物理和现代光电器件的发展具有重要意义。然而具有宽带、室温和快速响应能力的太赫兹光电探测技术,由于缺乏暗电流和光吸收之间的最佳平衡,仍然面临着巨大的挑战。在这项研究中,作者合成了新型拓扑绝缘体材料GeBi₄Te₇,并搭建了其与Bi₂Te₃的范德华异质结,以实现高灵敏度的太赫兹光电探测器。在平面金属-材料-金属结构中实现了在室温下将低光子能量太赫兹波段直接转化为光电流。结果表明,基于Bi₂Te₃-GeBi₄Te₇的太赫兹光电探测器能够实现0.02～0.54 THz的宽谱探测,且具有很高的光响应率(在0.112、0.27、0.5 THz下分别为592 V·W^-1、203 V·W^-1、40 V·W^-1),响应时间小于6μs。值得注意的是,它被用于高频太赫兹的成像应用演示。这些结果为Bi₂Te₃     

基于硒微米棒的宽光谱响应的光电探测器

采用物理气相沉积法合成硒微米棒,并以银浆为电极制备了金属-半导体-金属结构的光电探测器。该光电探测器在3 V偏压和450 nm光照下具有快速的响应速度（上升时间=41 ms,下降时间=46 ms）,优异的响应度（18.32 mA/W）和探测率（1.65×10⁸ Jones）。光谱测试表明器件具有从可见光到近红外的宽光谱探测能力（450-1550 nm）。此外,该器件还可以在无偏压下进行自供能探测。本研究将进一步完善硒半导体在宽光谱光电探测中的应用和发展。     

n-ZnO/p-GaN异质结紫外探测器及其光电性能研究

利用脉冲激光沉积(PLD)方法在p-GaN衬底上沉积了n-ZnO薄膜,构造了n-ZnO/p-GaN异质结型紫外(UV)光-电探测器原型器件,在(UV)光照条件下测试了器件的光电性能。扫描电镜(SEM)和X射线衍射(XRD)测试结果表明,ZnO薄膜具有很好的结晶质量;I-V曲线显示,器件在黑暗和光照环境下都表现出明显的整流行为;光谱响应曲线表明,器件响应度峰值出现在364nm附近,当反向电压为-5V时光电流达到饱和,此时响应度峰值达到1.19A/W。不同反向工作电压下的光谱探测率曲线表明,器件对364nm附近的UV光有较强的选择性,在-2V偏压下具有最佳的探测率,其探测率峰值达到8.9×1010 cm·Hz1/2/W。     

Giant‐Enhanced SnS2 Photodetectors with Broadband Response through Oxygen Plasma Treatment

Layered tin disulfide (SnS₂) is a vital semiconductor with versatile functionality due to its high carrier mobility and excellent photoresponsivity. However, the intrinsic defects V_s (sulfur vacancies), which cause Fermi level pinning (significant metal contact resistance), hinder its electrical and optoelectrical performance. Herein, oxygen plasma treatment is employed to enhance the optoelectronic performance of SnS₂ flakes, which results in artificial sub‐bandgap in SnS₂. Consequently, the broadband photosensing (300–750 nm) is remarkably improved. Specifically, under 350 nm illumination, the O₂‐plasma‐treated SnS₂ photodetector exhibits an enhanced photoresponsivity from 385 to 860 A W^?1, the external quantum efficiency and the detectivity improve by one order of magnitude as well as increase the photoswitching response improvement by two orders of magnitude for both rising (τ_r) and decay (τ_d) time. This artificial sub‐bandgap can both improve the photoresponse and broaden the response spectra, which paves a new path for the applications of optoelectronics.     

基于二维碲烯的太赫兹光电探测器

制备了金属-碲烯-金属的太赫兹光电探测器,实现了毫米波-太赫兹波下的光探测。结果表明,基于对数天线碲烯的太赫兹光电探测器在零偏压下具有较高的光响应率（40 mA /W,0.12 THz）,响应时间为8 μs,噪声等效功率（NEP）为4 pW·Hz^-0.5。研究结果为高性能室温太赫兹光探测提供了一种新的发展路径。     

AlGaN/GaN异质结紫外探测器

采用p-AlxGa1-xN/i-GaN/n- GaN异质结构成功制备了含铝组分分别为0.1和0.07的正照射可见盲紫外探测器，并分别测试了它们的伏安特性曲线和光电响应光谱。对于Al组分为0.1的器件，在零偏压处出现了极低的暗电流密度，表明器件具有非常高的信噪比。高分辨率X射线衍射仪对材料的测试结果表明，高铝组分(0.1)窗口层薄膜材料的晶体质量较差，导致暗电流增大，而其窗口层的窗口选择作用则可以得到较高的响应率和较宽的响应波段。     

Bidirectional rectifier with gate voltage control based on Bi2O2Se/WSe2 heterojunction

Two-dimensional (2D) WSe₂ has received increasing attention due to its unique optical properties and bipolar behavior. Several WSe₂-based heterojunctions exhibit bidirectional rectification characteristics, but most devices have a lower rectification ratio. In this work, the Bi₂O₂Se/WSe₂ heterojunction prepared by us has a type Ⅱ band alignment, which can vastly suppress the channel current through the interface barrier so that the Bi₂O₂Se/WSe₂ heterojunction device has a large rectification ratio of about 10⁵. Meanwhile, under different gate voltage modulation, the current on/off ratio of the device changes by nearly five orders of magnitude, and the maximum current on/off ratio is expected to be achieved 10⁶. The photocurrent measurement reveals the behavior of recombination and space charge confinement, further verifying the bidirectional rectification behavior of heterojunctions, and it also exhibits excellent performance in light response. In the future, Bi₂O₂Se/WSe₂ heterojunction field-effect transistors have great potential to reduce the volume of integrated circuits as a bidirectional controlled switching device.     

ZnSb/Ti3C2Tx MXene van der Waals heterojunction for flexible near-infrared photodetector arrays

Two-dimension (2D) van der Waals heterojunction holds essential promise in achieving high-performance flexible near-infrared (NIR) photodetector. Here, we report the successful fabrication of ZnSb/Ti₃C₂T_x MXene based flexible NIR photodetector array via a facile photolithography technology. The single ZnSb/Ti₃C₂T_x photodetector exhibited a high light-to-dark current ratio of 4.98, fast response/recovery time (2.5/1.3 s) and excellent stability due to the tight connection between 2D ZnSb nanoplates and 2D Ti₃C₂T_x MXene nanoflakes, and the formed 2D van der Waals heterojunction. Thin polyethylene terephthalate (PET) substrate enables the ZnSb/Ti₃C₂T_x photodetector withstand bending such that stable photoelectrical properties with non-obvious change were maintained over 5000 bending cycles. Moreover, the ZnSb/Ti₃C₂T_x photodetectors were integrated into a 26 × 5 device array, realizing a NIR image sensing application.     

Sodium‐Mediated Epitaxial Growth of 2D Ultrathin Sb2Se3 Flakes for Broadband Photodetection

As an important member of group VA–VIA semiconductors, 2D Sb₂Se₃ has drawn widespread attention thanks to its outstanding optoelectronic properties as compared to the bulk material. However, due to the intrinsic chain‐like crystal structure, the controllable synthesis of ultrathin 2D planar Sb₂Se₃ nanostructures still remains a huge challenge. Herein, for the first time, the crystal structure limitation is overcome and the successful structural evolution of 2D ultrathin Sb₂Se₃ flakes (as thin as 1.3 nm), by introducing a sodium‐mediated chemical vapor deposition (CVD) growth method, is realized. The formation of 2D planar geometry is mainly attributed to the preferential growth of (010) plane with the lowest formation energy. The thickness‐dependent band structure of 2D Sb₂Se₃ flakes shows a wide absorption band from UV to NIR region (300–1000 nm), suggesting its potential application in broadband photodetection. Strikingly, the Sb₂Se₃ flakes–based photodetector demonstrates excellent performance such as broadband response varying from UV to NIR region, high responsivity of 4320 mA W^?1, fast response time (τ_rise ≈ 13.16 ms and τ_decay ≈ 9.61 ms), and strong anisotropic ratio of 2.5@ 532 nm, implying promising potential application in optoelectronics.     

溅射时间对于Mg_2Si/Si异质结的影响

采用射频磁控溅射沉积并结合热处理制备Mg2Si/Si异质结,研究了溅射时间对Mg2Si/Si异质结的结构以及电阻率的影响。首先在P型Si衬底沉积不同厚度的Mg膜,然后进行低真空热处理,制备不同厚度的Mg2Si/Si异质结。通过XRD、SEM对Mg2Si/Si异质结中Mg2Si的晶体结构、异质结表面和剖面形貌进行分析,结果表明:制备了单一相Mg2Si薄膜,Mg2Si(220)衍射峰最强,异质结界面平整。通过四探针仪测量电阻率进行分析,发现电阻率随Mg2Si膜厚的增加而减小。     

宽带、双极化四脊喇叭馈源研究

研制了一种用于抛物面天线馈源的高性能宽带、双极化四脊喇叭天线.利用三维全波电磁场仿真(Computer Simulation Technology,CST)软件分析了喇叭天线中后腔的形状和结构参数以及馈电探针位置对天线驻波比的影响,同时对天线的整体结构参数进行了优化,并对其进行加工测试.模拟和实验测试结果表明：采用渐变后腔,并取合适的结构参数和馈电探针位置,馈源天线能得到最佳驻波比,在4～12 GHz的工作频带范围内小于2、-12 dB的边缘照射角大于90°,馈源的其它电性能参数符合设计要求.     

一种宽带圆极化天线阵的设计

为了有效拓展阻抗带宽和圆极化带宽,分析了一种宽带多层结构的圆极化微带贴片天线。通过调整贴片和倒角的大小,并通过在底层贴片上周期性开槽,在天线工作于3．0GHz时,可以获得16．14％（VSWR〈2．0）的阻抗带宽和10．47％的3dB轴比带宽。在此基础上,制作了一个4×4元小型平面圆极化天线阵,阻抗带宽可以达到26．67％（VSWR〈2．0）,轴比带宽可以达到11．12％（AR〈3dB）。这种结构的天线阵在无线通信等领域应用前景广阔。     

Recent progress on gas sensors based on graphene-like 2D/2D nanocomposites

Two-dimensional (2D) nanomaterials have demonstrated great potential in the field of flexible gas sensing due to their inherent high specific surface areas, unique electronic properties and flexibility property. However, numerous challenges including sensitivity, selectivity, response time, recovery time, and stability have to be addressed before their practical application in gas detection field. Development of graphene-like 2D/2D nanocomposites as an efficient strategy to achieve high-performance 2D gas sensor has been reported recently. This review aims to discuss the latest advancements in the 2D/2D nanocomposites for gas sensors. We first elaborate the gas-sensing mechanisms and the collective benefits of 2D/2D hybridization as sensor materials. Then, we systematically present the current gas-sensing applications based on different categories of 2D/2D nanocomposites. Finally, we conclude the future prospect of 2D/2D nanocomposites in gas sensing applications.     

宽带圆极化锥形辐射单元阵列天线的设计

基于L型探针馈电提出了一种宽带圆极化锥形辐射单元天线的设计方法。为了提高轴比带宽,馈电网络应用带L型馈电探针的宽带90°;电桥,锥台单元取代普通平面贴片作为辐射单元。4个单元组阵后可得到的峰值增益为12.7 dB。馈电网络在介质基板的底面以此来减小天线总体尺寸。测量结果与仿真结果吻合良好,天线可实现40.1%（VSWR<2）的阻抗带宽,42.7%的轴比（AR<3 dB）带宽。     

一种宽频带方形槽圆极化天线设计

文中提出了一种加载微扰元素的新型宽频带圆极化方形槽天线,它由一个倒L 型微带馈电线、一个L 型枝节、一对矩形槽和一个方形槽地板组成。用这些缝隙槽和枝节作为微扰元素来调节天线表面电流分布,可以激 发出多个圆极化谐振模式,从而实现了宽频带圆极化辐射。为了验证其合理性,加工并测试了天线模型。测量结果 表明,实测小于-10 dB 的阻抗带宽为74. 9%,小于3 dB 的轴比带宽为84. 7%。此外,测量和仿真的峰值增益分别为 4. 88 dBi 和4. 86 dBi。因此,文中设计的圆极化方形槽天线具有宽的圆极化带宽特性。     

Broadband Bi2O2Se Photodetectors from Infrared to Terahertz

2D Bi₂O₂Se has shown great potential in photodetector from visible to infrared (IR) owing to its high mobility, ambient stability, and layer-tunable bandgaps. However, for the terahertz (THz) band with longer wavelength and richer spectral information, there are few reports on the research of THz detection based on 2D materials. Herein, an antenna-assisted Bi₂O₂Se photodetector is constructed to achieve broadband photodetection from IR to THz ranges driven by multi-mechanism of electromagnetic waves to electrical conversion. The good tradeoff between the bandgap and high mobility results in a broad spectral detection. In the IR region, the nonequilibrium carriers result from photo-induced electron-hole pairs in the Bi₂O₂Se body. While in the THz region, the carriers are caused by the injected electrons from the metal electrodes by the electromagnetic-induced well. The Bi₂O₂Se photodetector achieves a broadband responsivity of 58 A W^-1 at 1550 nm, 2.7 × 10⁴ V W^-1 at 0.17 THz, and 1.9 × 10⁸ V W^-1 at 0.029 THz, respectively. Surprisingly, an ultrafast response time of 476 ns and a quite low noise equivalent power of 0.2 pW Hz^−1/2 are acquired at room temperature. Our researches exhibit promising prospects of Bi₂O₂Se in broadband detection, THz imaging, and ultrafast sensing.     

p－GeSi／n＋－Si异质结电光调制器

文章介绍了硅基光电子器件——ｐ－ＧｅＳｉ／ｎ＋－Ｓｉ异质结电光调制器的初步试验研究之后，给出了所研制调制器的调制深度为９０％时的调制电流约１８０ｍＡ。为了进一步减小调制电流和提高调制频率，提出了一些改进措施