Thermal cycling-induced changes in excess dark current in very long-wavelength HgCdTe photodiodes at low temperature

We have observed cooldown-to-cooldown changes in the reverse-bias dark current of some very long-wavelength (cutoff >14 μm) HgCdTe P-on-n heterojunction photodiodes operated at very low temperatures (40–45 K). Other photodiodes in the same arrays are stable between cooldowns. The unstable ones have high dark currents, in the tail of the dark current distribution. Current-voltage analysis indicates that the high dark current is caused by trap-assisted tunneling and that the number of traps changes from cooldown to cooldown. Devices with negligible trap-assisted tunneling current, limited by diffusion and band-to-band tunneling currents at reverse bias, are stable between cooldowns. Both types of devices are stable within a given cooldown over periods of at least 24 h.     

Analytical Modeling of Source-to-Drain Tunneling in Nanoscale Silicon MOSFET

Sub-10-nm bulk n-MOSFET(metal-oxide-semiconductor field effect transistor) direct source-todrain tunneling current density using Wentzel-Krammers-Brillouin(WKB) transmission tunneling theory has been simulated.The dependence of the source-to-drain tunneling current on channel length and barrier height is examined.Inversion layer quantization,band-gap narrowing,and drain induced barrier lowering effects have been included in the model.It has been observed that the leakage current density increases severely below 4 nm channel lengths,thus putting a limit to the scaling down of the MOSFETs.The results match closely with the numerical results already reported in literatures.     

Two-dimensional numerical computation of the structure-dependent spectral response in a 4H-SiC metal-semiconductor-metal ultraviolet photodetector with consideration of reflection and absorption on contact electrodes

A two-dimensional model of a 4H-SiC metal-semiconductor-metal(MSM) ultraviolet photodetector has been established using a self-consistent numerical calculation method.The structure-dependent spectral response of a 4H-SiC MSM detector is calculated by solving Poisson’s equation,the current continuity equation and the current density equation.The calculated results are verified with experimental data.With consideration of the reflection and absorption on the metal contacts,a detailed study involving various electrode heights(H),spacings (S) and widths(W) reveals conclusive results in device design.The mechanisms responsible for variations of responsivity with those parameters are analyzed.The findings show that responsivity is inversely proportional to electrode height and is enhanced with an increase of electrode spacing and width.In addition,the ultraviolet (UV)-to-visible rejection ratio is > 103.By optimizing the device structure at 10 V bias,a responsivity as high as 180.056 mA/W,a comparable quantum efficiency of 77.93%and a maximum UV-to-visible rejection ratio of 1875 are achieved with a detector size of H = 50 nm,S =9μm and W = 3μm.     

MCT infrafed detectors with close to radiatively limited performance at 240 K in the 3–5 µm band

Results are reported on infrared photodiodes which have been designed to minimize the dark diffusion currents for operating temperatures above 200 K in the MWIR (3–5 μm) waveband. It is shown that by adjusting the doping and composition profiles, the dark currents due to Auger and contact diffusion mechanisms can be controlled leading to devices which are close to being radiatively limited. The radiatively-generated current has been calculated as a function of temperature from the measured spectral response and this indicates that the radiative contribution increases from about 53% at 240 K to 65% at 300K. In addition, it is shown that these internally-generated radiative currents can be reduced using negative luminescence. This result is the first experimental verification that the internally-generated radiative mechanism can contribute to the diffusion current.     

Influence of etching current density on the morphology of macroporous silicon arrays by photo-electrochemical etching

Macroporous silicon arrays(MSA) have attracted much attention for their potential applications in photonic crystals,silicon microchannel plates,MEMS devices and so on.In order to fabricate perfect MSA structure,photo-electrochemical (PEC) etching of MSA and the influence of etching current on the pore morphology were studied in detail.The current-voltage curve of a polished n-type silicon wafer was presented in aqueous HF using back-side illumination.The critical current density J_(PS) was discussed and ...     

A PNPN tunnel field-effect transistor with high-k gate and Iow-k fringe dielectrics

A PNPN tunnel field effect transistor(TFET) with a high-k gate dielectric and a low-k fringe dielectric is introduced.The effects of the gate and fringe electric fields on the TFET’s performance were investigated through two-dimensional simulations.The results showed that a high gate dielectric constant is preferable for enhancing the gate control over the channel,while a low fringe dielectric constant is useful to increase the band-to-band tunneling probability.The TFET device with the proposed structure has good switching characteristics,enhanced on-state current,and high process tolerance.It is suitable for low-power applications and could become a potential substitute in next-generation complementary metal-oxide-semiconductor technology.     

四端介观结构中的量子泵浦效应

Quantum pump effect in a four-terminal mesoscopic structure constructed from a homogeneous twodimensional electron gas is investigated. Oscillating electric potentials are applied to the two opposite terminals of the four-terminal mesoscopic structure. In both the remaining two opposite terminals and in the central region there are constant potentials that do not change with time. The oscillating potentials change slowly in comparison with all of the internal time scales of the structure and the amplitude of the oscillating potentials is small in comparison with the Fermi energy. The current of each lead and the transmission coefficients from one lead to another are calculated by using the non-equilibrium Green’s function approach under the adiabatic approximation. In the remaining two opposite terminals of the four-terminal structure, the quantum pump effect can produce an electric current whose magnitude and direction depends on the Fermi energy. The pumped currents are ascribed to the asymmetry of transmission coefficients with respect to the Fermi energy.     

Optical and structural properties of sol-gel derived nanostructured CeO_2 film

Sol-gel derived nanostructured CeO2 film was deposited on glass substrate using the dip-coating technique with annealed at 650oC. X-ray diffraction (XRD), scanning electron microscopy (SEM), Fourier transform infrared (FTIR), UV/VIS and photoluminescence (PL) spectroscopy studies were employed to analyze the structural and optical properties of the sol-gel derived nanostructured CeO2 film. The average crystallite size was estimated from XRD pattern using Scherrer equation as about 3–4 nm. SEM micrograph shows the film have good adherence to the substrate, porous in nature and crack free. The UV-visible absorption spectroscopic measurement results showed that the products had conspicuous quantum size effects. The absorption spectrum indicates that the sol-gel derived nanostructured CeO2 film have a direct bandgap of 3.23 eV and the photoluminescence spectra of the film show strong band at 378 nm may have promising applications as optoelectronic materials.     

HgCdTe long-wavelength infrared photovoltaic detectors fabricated using plasma-induced junction formation technology

A long-wavelength infrared (LWIR) HgCdTe photodiode fabrication process has been developed based on reactive ion etching (RIE) plasma-induced p-to-n type conversion for junction formation. The process has been successfully applied to produce devices using both vacancy-doped and gold-doped liquid phase epitaxy (LPE)-grown p-type HgCdTe material with a cut-off wavelength of 10 μm at 77 K. The fabrication procedure is outlined and results are presented on completed devices that indicate the effect of variations in processing parameters. The fabricated devices have been characterized by measurements of the diode dark I-V characteristic over the temperature range 20–200 K, as well as by spectral responsivity measurements. Analysis of the device I-V data, variable area data, and modeling of diode dark current mechanisms indicates that gold-doped material results in higher performing devices compared to vacancy-doped material. Device performance is found to be strongly affected by trap-assisted tunneling currents and surface leakage currents at zero bias. Nonoptimum surface passivation is likely to be the major factor limiting performance at this early stage of device technology development.     

薛定谔方程中包络孤子运动及相互作用的辛算法模拟

给出并证明了薛定谔方程中高斯包络孤子的表达式.针对该高斯包络孤子进一步提出了薛定谔方程中存在高斯包络孤子相互作用的情况;针对薛定谔方程提出其辛算法.通过分离波函数实部和虚部把薛定谔方程变换成标准的哈密顿正则方程组,对正则方程进行欧拉中心差分离散实现辛算法.给出了辛算法的守恒量,并证明了其稳定性.对薛定谔方程中的高斯包络孤子运动及多孤子相互作用过程进行了数值仿真,实验结果证明了所提观点的正确性及辛算法的有效性.     

超薄栅介质MOSFET直接隧穿电流自洽解模型

采用自洽解方法求解一维薛定谔方程和二维泊松方程,得到电子的量子化能级和相应的浓度分布,利用MWKB方法计算电子隧穿几率,从而得到不同栅偏置下超薄栅介质MOSFET的直接隧穿电流模型。一维模拟结果与实验数据十分吻合,表明了模型的准确性和实用性。二维模拟结果表明,低栅压下,沟道边缘隧穿电流远大于沟道中心隧穿电流,沟道各处的隧穿电流均大于一维模拟结果;高栅压下,隧穿电流在沟道的分布趋于一致,且逼近一维模拟结果。     

GaN HFET的沟道夹断特性和强电场下的电流崩塌

从自洽求解二维泊松方程和薛定谔方程出发,研究了纵、横向电场作用下GaNHFET沟道中的电子态和夹断特性。建立了不同异质结构和电场梯度下的电荷控制模型;运用热电子隧穿电流崩塌模型解释了强场电流崩塌的实验结果;强调了沟道夹断特性对电流崩塌的影响;研究了背势垒异质结构、场板电极和挖槽等抑制电流崩塌的方案,提出利用挖槽独立设计内、外沟道异质结构抑制强场电流崩塌的新思路。     

基于高阶辛算法的纳米器件本征问题仿真

研究精确和高效的数值方法是现代纳米器件建模和优化的重要目标之一,而分析大部分纳米器件特性的切入点是确定器件结构的能量本征值和能量本征态。本文提出了一种新的算法—高阶辛时域有限差分法(SFDTD(3,4): symplectic finite-difference time-domain)求解含时薛定谔方程。在时间上采用三阶辛积分格式离散,空间上采用四阶精度的同位差分格式离散,建立了求解含时薛定谔方程的高阶辛时域有限差分算法。将高阶辛算法SFDTD(3,4)用于一维量子阱中盒中粒子和谐振子的仿真中,实验结果表明SFDTD(3,4)法比传统的时域有限差分算法以及高阶时域有限差分算法更加准确,适用于对纳米器件本征问题的长时间仿真。     

Transformations for the variable coefficient Ginzburg-Landau equation with symbolic computation

1 Introduction Of late, a research directly seeking for exact solutions of nonlinear evolution equations (NLEEs) has become increasingly attractive, because of their applications in many important scientific problems and the availability of symbolic compu…     

人工神经网络在解深亚微米MOSFETs反型层量子效应模型中的应用

应用前馈神经网络解深亚微米MOSFETs反型层量子效应模型.此方法需要用神经网络解微分方程的特征值问题以及积分方程.首先以此方法解具有Morse势函数的Schrodinger方程来验证此方法的精度,然后,以此方法解Schrodinger方程和Poisson方程的近似模型--三角势阱模型.该方法易于实现,便于扩展到二维模型,方便模拟.     

ω-3 ω双色场相干控制电离与高次谐波

通过数值求解一维含时薛定谔方程 ,研究了原子在双色场作用下的电离和高次谐波及它们的相互关系。通过讨论两种不同的电离机制 :隧穿电离机制和过势垒电离机制 ,发现电离变化的规律很相似 ,但高次谐波谱的变化规律却很不同。研究说明利用双色场对原子过程进行相位控制是可行的     

微波功率AlGaN/GaN HFET的二维能带和异质结构设计

在综述微波功率AlGaN/GaN HFET技术发展趋势基础上,提出了二维异质结能带优化设计的新课题.从自洽求解薛定谔方程和泊松方程出发研究了利用异质界面上的极化电荷来剪裁异质结能带.用极化电荷设计近矩形前势垒能增大高能热电子的隧穿势垒宽度,抑制电流崩塌.背势垒中的极化电荷强化了沟道阱的量子限制,减弱了沟道中的强场峰,能提高击穿电压和抑制电流崩塌.薄势垒层中的极化电荷强化了沟道阱的结构,降低势垒高度后能产生高密度的电子气.优化设计二维异质结构能抑制沟道中的强场峰和电流崩塌,提高击穿电压和大漏压下的输出功率.     

用光信号偏振度衡量偏振模色散和非线性效应对WDM系统的影响

利用非线性薛定谔方程，计算考虑偏振模色散和非线性效应情况下波分复用（WDM）系统中的RZ码和NRZ码的光信号偏振度，得到DOP随着波长变化的曲线图，同时得到各个信道的眼图。结果表明：通过光信号偏振度的曲线图与眼图的比较，不但明显看出PMD和非线性效应对各个信道的影响是不同的，并且证实偏振度可以作为WDM系统中监测信道性能的监控信号，这将为实现PMD实时最坏信道补偿提供理论依据。     

五阶非线性和高阶色散作用下超高斯脉冲的传输特性

从非线性薛定愕方程出发,用变分法得出了描述锐度因子为不同自然数的超高斯脉冲在光纤色散(高阶和二阶)和非线性(三阶和五阶)作用下传输的微分方程组,用龙格-库塔算法对微分方程组进行数值求解,结果表明对于给定的较小的光纤色散和非线性系数,都存在特定的三阶和五阶非线性系数使非线性有效地对高阶和二阶色散给脉冲传输造成的展宽影响加以补偿,此时超高斯脉冲在光纤以近似保形的状态稳定传输。当色散系数与非线性系数之比太大时脉冲将被无限展宽。