一种新颖的注入效率可控的门极可关断晶闸管的特性分析与优化

在阳极短路型门极可关断晶闸管(SA-GTO)的基础上,提出了一种新颖的注入效率可控的门极可关断晶闸管(IEC-GTO),其注入效率可通过一层位于阳极短路接触区的薄氧化层来控制.模拟了IEC-GTO的正向阻断、导通和开关特性,并与短路阳极和普通阳极GTO的特性进行比较分析.结果表明,IEC-GTO在关断特性和通态特性间获得较好的折中.最后,通过对薄阳极氧化层宽度和阳极掺杂浓度的优化,分析了工艺的可行性,给出了工艺方案,说明引入氧化层并不会增加IEC-GTO的工艺难度.     

一种新颖的注入效率可控的门极可关断晶闸管的特性分析与优化

在阳极短路型门极可关断晶闸管(SA-GTO)的基础上,提出了一种新颖的注入效率可控的门极可关断晶闸管(IEC-GTO),其注入效率可通过一层位于阳极短路接触区的薄氧化层来控制.模拟了IEC-GTO的正向阻断、导通和开关特性,并与短路阳极和普通阳极GTO的特性进行比较分析.结果表明,IEC-GTO在关断特性和通态特性间获得较好的折中.最后,通过对薄阳极氧化层宽度和阳极掺杂浓度的优化,分析了工艺的可行性,给出了工艺方案,说明引入氧化层并不会增加IEC-GTO的工艺难度.     

IGCT门极驱动特性研究

IGCT（集成门极换流晶闸管）是一种同时结合GTO和IGBT优点的新型大功率半导体开关器件。本文首先结合4500V／4000A IGBT驱动电路设计，分忻IGCT基本工作原理和驱动电路工作原理。最后通过低压大电流实验，验证丁IGCT开通、关断原理。证明了IGCT在相同环境温度的导通状态下，门极驱动电流对导通睚降没有影响。     

一种新的GCT门-阴极图形的设计方法

在分析门极可关断晶闸管(GTO)和门极换流晶闸管(GCT)门-阴极结构的基础上,依据GCT关断时的换流机理,提出了一种新的GCT门-阴极图形的设计方法.与现有的GCT门-阴极图形相比,用该方法设计的门-阴极图形,在保证开关过程中电流均匀分布的前提下,可增加GCT的有效阴极面积,减小热阻,并提高电流容量.     

一种新的GCT门-阴极图形的设计方法

在分析门极可关断晶闸管(GTO)和门极换流晶闸管(GCT)门-阴极结构的基础上,依据GCT关断时的换流机理,提出了一种新的GCT门-阴极图形的设计方法.与现有的GCT门-阴极图形相比,用该方法设计的门-阴极图形,在保证开关过程中电流均匀分布的前提下,可增加GCT的有效阴极面积,减小热阻,并提高电流容量.     

可关断晶闸管（GTO）

门极可断晶闸管（gate turn-off thyristor,GTO）是一种具有自断能力的晶闸管。处于断态时,如果有阳极正向电圾,在其门极加上正向触发脉冲电流后,GTO可由断态转达入通态,已处于通态时,门极加上足够脉冲电流,GTO由通态转入断态。由于不需用外部电路强迫阳极电流为0而使之关断,强迫关断电路。这就简化了是力变换主电路,     

IGCT

IGCT集成门极换流晶闸管（Intergrsted Gate Commutated Thyriscors）是一种用于巨型电力电子成套装置中的新型电力半导体器件。IGCT使变流装置在功率、可靠性、开关速度、效率、成本、重量和体积等方面都取得了巨大进展,给电力电子成套装置带来了新的飞跃。IGCT是将GTO芯片与反并联二极管和门极驱动电路集成在一起,再与其门极驱动器在外围以低电感方式连接,结合了晶体管的稳定关断能力和晶闸管低通态损耗的优点,在导通阶段发挥晶闸管的性能,关断阶段呈现晶体管的特性。     

IGCT

IGCT集成门极换流晶闸管（Intergrsted Gate Commutated Thyriscors）是一种用于巨型电力电子成套装置中的新型电力半导体器件。IGCT使变流装置在功率、可靠性、开关速度、效率、成本、重量和体积等方面都取得了巨大进展,给电力电子成套装置带来了新的飞跃。IGCT是将GTO芯片与反并联二极管和门极驱动电路集成在一起,再与其门极驱动器在外围以低电感方式连接,结合了晶体管的稳定关断能力和晶闸管低通态损耗的优点,在导通阶段发挥晶闸管的性能,关断阶段呈现晶体管的特性。     

新型功率器件IGCT

集成门极换流晶闸管（IGCT）是将门极驱动电路与门极换流晶闸管GCT集成于一个整体形成的器件。门极换流晶闸管GCT是基于GTO结构的一个新型电力半导体器件，它不仅与GTO有相同的高阻断能力和低通态压降．而且有与IGBT相同的开关性能，兼有GTO和IGBT之所长，是一种较理想的兆瓦级、中压开关器件。     

GTO器件技术的最新发展

本文综述了国外近几年来在门极可关断晶闸管(GTO)器件技术方面的最新研究进展和发展方向。系统地介绍了国外为了进一步提高GTO器件的电流、电压容量及实现GTO的高频化而作出的种种努力和由此发展的各种新型GTO结构设计。     

Turn-off operation of a MOS-gate 2.6 kV 4H–SiC gate turn-off thyristor

The turn-off operation of a 4H–SiC gate turn-off thyristor (GTO) with 2.6 kV breakover voltage has been investigated using an external Si-MOSFET as a gate-to-emitter shunt (MOS-gate mode), in the temperature interval 293–496 K. The maximum cathode current density j_cmax that can be turned off in such a mode decreases from 1850 A/cm² at 400 K to 700 A/cm² at 496 K. The room temperature j_cmax value is estimated to be about 3700 A/cm². The above j_cmax values are essentially higher than those observed when turning this thyristor off in the conventional GTO mode. Turn-off transients in the MOS-gate mode have been studied in both quasi-static and pulse regimes. Temperature dependencies of the turn-on and turn-off times, as well as those of the turn-on and turn-off energy losses have been measured. The upper switching frequency of the GTO is estimated to be about 700 kHz.     

4H-SiC power devices for use in power electronic motor control

Silicon carbide (SiC) is an emerging semiconductor material which has been widely predicted to be superior to both Si and GaAs in the area of power electronic switching devices. This paper presents an overview of SiC power devices and concludes that the MOS turn-off thyristor (MTO™), comprising of a hybrid connection of SiC gate turn-off thyristor (GTO) and MOSFET, is one of the most promising near term SiC switching device given its high power potential, ease of turn-off, 500°C operation and resulting reduction in cooling requirements. The use of a SiC and an anti-parallel diode are primary active components which can then be used to construct an inverter module for high-temperature, high-power direct current (d.c.) motor control.     

一种带P型埋层的4H-SiC PiN二极管

碳化硅(SiC)PiN二极管是应用在高压大功率整流领域中的一种重要的功率二极管。受SiC外延材料的载流子寿命限制以及常规SiC PiN二极管较低的阳极注入效率的影响,SiC PiN二极管的正向导通性能较差,这极大限制了其在高压大电流领域的应用。文章提出了一种带P型埋层的4H-SiC PiN二极管,较常规SiC PiN二极管增强了阳极区的少子注入效率,降低了器件的导通电阻,增大了正向电流。仿真结果表明,当正向偏压为5 V时,引入P型埋层的SiC PiN二极管的正向电流密度比常规SiC PiN二极管提升了52.8%。     

3100 V, asymmetrical, gate turn-off (GTO) thyristors in 4H-SiC

A 2-mm×2-mm, 4H-SiC, asymmetrical npnp gate turn-off (GTO) thyristor with a blocking voltage of 3100 V and a forward current of 12 A is reported. This is the highest reported power handling capability of 37 kW for a single device in SiC. The 5-epilayer structure utilized a blocking layer that was 50 μm thick, p-type, doped at about 7-9×10¹⁴ cm^-3. The devices were terminated with a single zone junction termination extension (JTE) region formed by ion-implantation of nitrogen at 650°C. The device was able to reliably turn-on and turn-off 20 A (500 A/cm²) of anode current with a turn-on gain (I_K/I_{G, on}) of 20 and a turn-off gain (I_K/I_{G, off}) of 3.3     

GTO thyristors

Major aspects of gate-turn-off (GTO) thyristors are discussed, including device modeling, design considerations, basic research on their switching phenomena, electrical characteristics, and applications. A device design is considered which would increase the maximum interruptible anode current I_ATO and blocking voltage while decreasing the switching time and power dissipation. The most difficult design problem is to determine the dominant factors that affect I_ATO. From experimental and computational results, it is found that I_ATO is increased by a reduced p-base sheet resistance, a thicker n-base layer and an increased gate-cathode breakdown voltage. The turn-off performance is also improved by introducing several modified device structures, such as an anode-shorted emitter construction, an asymmetric n⁺-doped based structure, a buried gate, and a cathode emitter heterojunction GTO thyristor. Typical characteristics are given for a 5000-V 3000-A unit. GTO applications are discussed, including variable-voltage variable-frequency inverter-controlled AC induction motor drive systems and PWM converter systems     

The MOS-controlled MCG-GTO thyristor

In the new MOS-controlled turn-off thyristor described, the recombination of holes in the n base by the shunt of the floating p-n junction in the n base occurs simultaneously with the recombination of holes in the p base due to the cathode emitter shunt using the two MOS gates. This turn-off operation offers two important improvements over the normal MOS-controlled thyristor by virtue of the recombination of holes in the n base during the turn-off process. These improvements are high-speed turn-off and high maximum controllable current. Experimental verification of the device's operation is achieved using a lateral minority-carrier control (MCC) GTO thyristor having two n-channel MOSFETs. In this device, the turn-off operation is achieved by the simultaneous recombination of holes in both the n and p bases due to the equivalence of one-gate driving accomplished by the connection of the two MOS gates     

A new ultra-wideband fractal monopole antenna

The paper focuses on the peculiar dynamic behaviour of the recently developed 8 mm² TO-220-packaged, high-voltage, double-interdigitated (or rwo interdigi-tation levels—TIL) GTO thyristor. This novel power device was rated under both slightly and heavily inductive resistive loads, i.e. close to the real conditions encountered in practical power circuits employing GTO thyristors. Emphasis is laid on the ability of TIL GTOs to switch safely, with minimum power losses, a certain amount of anode current under high-voltage conditions and high commutation frequencies. The merits of TIL GTO thyristors are analysed in terms of their reliability and switching efficiency, which include the total power losses (conduction and switching losses), turn-on and turn-off gains and the switching speed. It is shown that thanks to their built-in self-protective features, these novel GTOs possess an enhanced current-handling capability at commutation frequencies up to 50kHz under extremely tough load conditions. The main implications of the results for power applications are outlined.     

Characterizing the turn-off performance of multi-cathode GTOthyristors using thermal imaging

The thermal imaging of a switching gate-turn-off thyristor (GTO) is described. Using this method, the extent of redistribution occurring at turn-off under various gate drive and anode circuit conditions is determined. The effect of redistribution on the device rating and performance is discussed. Any redistribution in the current will be accompanied by an increase in the losses in the region to turn off last, and a reduction in the losses elsewhere. The experimental procedure for making the switching losses dominant is described. Results show that, under certain gate drive and anode-cathode voltage conditions at turn-off, the anode current redistributes between cathode islands, greatly stressing some islands. From this, conclusions are made concerning GTO rating and circuit design     

Turn-On Principles of the MOS-GTO

MOS-GTO's (GTO thyristors which are turned off by the action of a MOS-gate) represent a new generation of controllable thyristors offering considerable advantages in turn-off behavior as compared to conventional GTO's. However, MOS-GTO's generally require one control electrode for turn-on and another control electrode for turn-off, which might be regarded as a disadvantage. It is shown that in MOS-GTO's with a p-channel cathode structure it is possible to turn the thyristor on and off by controlling just one MOS gate electrode. As a triggering current for turn-on, the MOS capacitor charging current is used.