共查询到19条相似文献,搜索用时 93 毫秒
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设计一种数字控制的高增益宽带宽放大器,提出了采用多个放大器直接耦合级联方式,通过理论分析合理选择各级增益的分配,明显改善了放大器的低频特性,极大地提高了增益范围。系统由前置放大电路、程控增益放大电路、通频带选择电路、功率放大电路、单片机控制电路以及电源模块6个部分组成。其中通频带选择电路由两路巴特沃斯低通滤波器组成,可实现通频带的切换;功率放大电路由多个高速缓冲芯片BUF634并联组成,扩大了电流输出范围,实现了功率放大;单片机控制电路以MSP430G2553为主控芯片,使用液晶12864实现显示功能,人机界面友好。经测试,本系统能够完成0~10MHz频率范围内的0~80dB增益步进可调功能。在增益为60dB时,输出电压噪声峰峰值小于0.3V,很好的完成了系统的设计指标。 相似文献
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本设计由三个模块电路构成:前级放大电路(带AGC部分)、后级放大电路和单片机显示与控制模块。在前级放大电路中,用宽带运算放大器AD603两级级联放大输入信号,输出放大一定倍数的电压,经过后级放大电路达到大于8V的有效值输出。ADUC812的单片机显示、控制和数据处理模块除可以程控调节放大器的增益外,还可以实时显示输出电压有效值。 相似文献
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针对现行的增益放大器对于低频10M赫兹和高频段的放大特性不能满足增益的一致性,同时每个增益放大器都需级联才能满足0~60d B可调,但级联会产生指标的降低的问题,文中提出一个射频宽带增益放大器。其高频段模块电路是由输入电路、三级16d B放大电路和四选一切换器、增益可调放大器和输出驱动电路组成的模拟电路构成,系统控制模块以STC单片机为主,可完成增益设定、控制四选一切换器、增益可调电路等功能。测试结果表明文中提供的射频宽带放大器,相比传统的射频宽带放大器,在提供较低频段和高频段增益放大且提供增益一致性的同时,能够提供更高的线性度。 相似文献
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基于MSP430的直流宽带放大器设计 总被引:1,自引:0,他引:1
以压控增益宽带放大器VCA810为主,配合低噪声高速运放OPA820ID和高输出电压低失真运放THS3091D,设计并制作一个基于超低功耗单片机MSP430F155的5 V单电源供电的宽带低噪声放大器。由单片机软件实现VCA810增益控制及输出波形幅值显示。电压增益为-20~+60 dB可调,在最大增益下,通频带为10 Hz~10 MHz,负载50Ω情况下可输出峰峰值29 V的电压。为解决宽带放大器的自激问题及减小输出噪声,采用了多种形式的抗干扰措施,抑制噪声,改善放大器的稳定性。 相似文献
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This paper presents a high-gain wideband low-noise IF amplifier aimed for the ALMA front end system using 90-nm LP CMOS technology.A topology of three optimized cascading stages is proposed to achieve a flat and wideband gain.Incorporating an input inductor and a gate-inductive gain-peaking inductor,the active shunt feedback technique is employed to extend the matching bandwidth and optimize the noise figure.The circuit achieves a flat gain of 30.5 dB with 3 dB bandwidth of 1-16 GHz and a minimum noise figure of 3.76 dB.Under 1.2 V supply voltage,the proposed IF amplifier consumes 42 mW DC power.The chip die including pads takes up 0.53 mm~2,while the active area is only 0.022 mm~2. 相似文献
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《Solid-State Circuits, IEEE Journal of》1970,5(3):95-98
The authors deal with two recently reported active circuits for realization of a grounded inductor using a single unity-gain amplifier and RC networks. It is shown that the inductance parameters are very sensitive to amplifier gain; this can be remedied by using a high-gain differential-input operational amplifier. Amplifier imperfection in respect of nonzero output impedance is found to make both circuits behave similarly. Sensitivity of tuned circuits using the active inductances is analyzed and conditions for minimum sensitivity are derived. 相似文献
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A multistage operational transconductance amplifier with a feedforward compensation scheme which does not use Miller capacitors is introduced. The compensation scheme uses the positive phase shift of left-half-plane (LHP) zeroes caused by the feedforward path to cancel the negative phase shift of poles to achieve a good phase margin. A two-stage path increases further the low frequency gain while a feedforward single-stage amplifier makes the circuit faster. The amplifier bandwidth is not compromised by the absence of the traditional pole-splitting effect of Miller compensation, resulting in a high-gain wideband amplifier. The capacitors of a capacitive amplifier using the proposed techniques can be varied more than a decade without significant settling time degradation. Experimental results for a prototype fabricated in an AMI 0.5-/spl mu/m CMOS process show DC gain of around 90 dB and a 1% settling time of 15 ns for a load capacitor of 12 pF. The power supply used is /spl plusmn/1.25 V. 相似文献
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宽带大动态AGC电路设计 总被引:1,自引:0,他引:1
自动增益控制电路是接收机模块中的关键控制电路之一,其作用是改善接收机的动态范围。具体分析了自动增益控制电路的工作原理以及AGC的分类方式。为了设计宽带大动态的AGC电路,分析了可变增益ADL5330和对数放大器AD8318的电路功能和主要性标,并利用这两款芯片设计了一种宽带大动态AGC模块,给出了典型电路及测试结果。与传统AGC电路相该电路结构简单、体积小,且能实现宽带、大动态、低噪声放大等功能。 相似文献
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介绍了一种用于12 bit,20 MS/s流水线模数转换器前端的高性能采样/保持电路。该电路采用全差分结构、底极板采样来消除电荷注入和时钟馈通误差。采用栅压自举开关,并通过对电路中的开关进行组合优化,极大地提高了电路的线性性能。同时,运算放大器采用折叠式增益增强结构,以获得较高的增益和带宽。采用CSMC公司的0.5μm CMOS工艺库,对电路进行了仿真和流片。结果表明,在5 V电源电压下,采样频率为20 MHz,采样精度可达到0.012%,在输入信号为奈奎斯特频率时,无杂散动态范围(SFDR)为76 dB。 相似文献
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Nagano N. Suzaki T. Soda M. Kasahara K. Takeuchi T. Honjo K. 《Microwave Theory and Techniques》1994,42(1):2-10
Monolithic ultra-broadband transimpedance amplifiers are developed using AlGaAs/GaAs HBTs. To realize good amplifier performances, two factors are mentioned: an affordable HBT fabrication process using the self-aligned method and an optimized circuit design considering large signal operations. The developed HBT fabrication process achieves excellent uniformity in DC characteristics and the effect on amplifier microwave performances, derived from the discrete device uniformity, is estimated. Amplifier circuit configurations are designed by harmonic balance simulation using the extracted large signal device parameters The fabricated amplifier exhibits a DC to 13.4-GHz bandwidth with an 18.1-dB gain. Fairly good uniformity is also achieved for the amplifier microwave performances. An optical receiver module is constructed mounting the developed HBT amplifier and InGaAs p-i-n photodiode chips. The optical receiver module provides a 9.4-GHz bandwidth and an optical receiver sensitivity of -15.7 dBm at 10-Gb/s data rate 相似文献
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A further contribution to the sensitivity of the gain to the variation of the negative-resistance value of a high-gain single-diode amplifier having a lowpass wideband characteristic is presented. It is proved that the use of a general passive embedding in place of a lossless one does not improve the sensitivity of these amplifiers. 相似文献
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设计了一种高性能的采样保持(S/H)电路,在1.8V的电源电压下,其性能满足12位精度、100MS/s转换速率的ADC的要求。设计中采用了一种新型的自举采样开关,提高了S/H电路的可靠性和线性度;对于高增益大带宽的运算跨导放大器OTA的带宽设计,在分析了主运放和辅助运放在带宽和相位裕度等方面的关系的基础上,提出了新的设计方法。仿真结果表明:S/H电路的差动输出摆幅达到了2V;对于输入为49MHz的正弦波,测得其信号噪声失真比达到了82dB,满足12位ADC的要求;整个电路的功耗约为20mW。 相似文献