Reversible electrical switching of spin polarization in multiferroic tunnel junctions

Spin-polarized transport in ferromagnetic tunnel junctions, characterized by tunnel magnetoresistance, has already been proven to have great potential for application in the field of spintronics and in magnetic random access memories. Until recently, in such a junction the insulating barrier played only a passive role, namely to facilitate electron tunnelling between the ferromagnetic electrodes. However, new possibilities emerged when ferroelectric materials were used for the insulating barrier, as these possess a permanent dielectric polarization switchable between two stable states. Adding to the two different magnetization alignments of the electrode, four non-volatile states are therefore possible in such multiferroic tunnel junctions. Here, we show that owing to the coupling between magnetization and ferroelectric polarization at the interface between the electrode and barrier of a multiferroic tunnel junction, the spin polarization of the tunnelling electrons can be reversibly and remanently inverted by switching the ferroelectric polarization of the barrier. Selecting the spin direction of the tunnelling electrons by short electric pulses in the nanosecond range rather than by an applied magnetic field enables new possibilities for spin control in spintronic devices.     

A carbon based spintronic material Fe(x)-C(1-x)/Si structure

The decay of spin polarization poses serious problems for spintronic devices. It will be greatly helped by the availability of spintronic materials with a long spin diffusion length. Carbon has small spin-orbital interaction and longer coherent length. This makes carbon suitable material for exploitation in the spintronic materials and devices. A great deal of magnetoresistance (MR) research has been carried out in carbon nanotubes, grapheme and small carbon molecules. However, the MRs of these materials are normally observed at low temperature, making these carbon materials difficult used in information industry. In this paper, we introduce a novel class of carbon based hybrid materials Fe(x)-C(1-x)/Si structure which show larger MR at room temperature. These materials have also some other novel physical properties, such as electromagnetoresistance, switch effect, pressure sensitivity, gas sensitivity and photoconductivity. This kind of carbon based materials has shown early sign of being excellent candidates for spintronic materials operating at room temperature.     

Observation of Various and Spontaneous Magnetic Skyrmionic Bubbles at Room Temperature in a Frustrated Kagome Magnet with Uniaxial Magnetic Anisotropy

The quest for materials hosting topologically protected skyrmionic spin textures continues to be fueled by the promise of novel devices. Although many materials have demonstrated the existence of such spin textures, major challenges remain to be addressed before devices based on magnetic skyrmions can be realized. For example, being able to create and manipulate skyrmionic spin textures at room temperature is of great importance for further technological applications because they can adapt to various external stimuli acting as information carriers in spintronic devices. Here, the first observation of skyrmionic magnetic bubbles with variable topological spin textures formed at room temperature in a frustrated kagome Fe₃Sn₂ magnet with uniaxial magnetic anisotropy is reported. The magnetization dynamics are investigated using in situ Lorentz transmission electron microscopy, revealing that the transformation between different magnetic bubbles and domains is via the motion of Bloch lines driven by an applied external magnetic field. These results demonstrate that Fe₃Sn₂ facilitates a unique magnetic control of topological spin textures at room temperature, making it a promising candidate for further skyrmion‐based spintronic devices.     

Current-Induced Spin–Orbit Torques for Spintronic Applications

Control of magnetization in magnetic nanostructures is essential for development of spintronic devices because it governs fundamental device characteristics such as energy consumption, areal density, and operation speed. In this respect, spin–orbit torque (SOT), which originates from the spin–orbit interaction, has been widely investigated due to its efficient manipulation of the magnetization using in-plane current. SOT spearheads novel spintronic applications including high-speed magnetic memories, reconfigurable logics, and neuromorphic computing. Herein, recent advances in SOT research, highlighting the considerable benefits and challenges of SOT-based spintronic devices, are reviewed. First, the materials and structural engineering that enhances SOT efficiency are discussed. Then major experimental results for field-free SOT switching of perpendicular magnetization are summarized, which includes the introduction of an internal effective magnetic field and the generation of a distinct spin current with out-of-plane spin polarization. Finally, advanced SOT functionalities are presented, focusing on the demonstration of reconfigurable and complementary operation in spin logic devices.     

Tunnel magnetoresistance effect and magnetic damping in half-metallic Heusler alloys

Some full-Heusler alloys, such as Co(2)MnSi and Co(2)MnGe, are expected to be half-metallic ferromagnetic material, which has complete spin polarization. They are the most promising materials for realizing half-metallicity at room temperature owing to their high Curie temperature. We demonstrate a huge tunnel magnetoresistance effect in a magnetic tunnel junction using a Co(2)MnSi Heusler alloy electrode. This result proves high spin polarization of the Heusler alloy. We also demonstrate a small magnetic damping constant in Co(2)FeAl epitaxial film. The very high spin polarization and small magnetic constant of Heusler alloys will be a great advantage for future spintronic device applications.     

Spin–Orbit Torque Switching in a Nearly Compensated Heusler Ferrimagnet

Ferrimagnetic materials combine the advantages of the low magnetic moment of an antiferromagnet and the ease of realizing magnetic reading of a ferromagnet. Recently, it was demonstrated that compensated ferrimagnetic half metals can be realized in Heusler alloys, where high spin polarization, zero magnetic moment, and low magnetic damping can be achieved at the same time. In this work, by studying the spin–orbit torque induced switching in the Heusler alloy Mn₂Ru_{1? x} Ga, it is found that efficient current‐induced magnetic switching can be realized in a nearly compensated sample with strong perpendicular anisotropy and large film thickness. This work demonstrates the possibility of employing compensated Heusler alloys for fast, energy‐efficient spintronic devices.     

Controlling Magnetic and Optical Properties of the van der Waals Crystal CrCl3−xBrx via Mixed Halide Chemistry

Magnetic van der Waals (vdW) materials are the centerpiece of atomically thin devices with spintronic and optoelectronic functions. Exploring new chemistry paths to tune their magnetic and optical properties enables significant progress in fabricating heterostructures and ultracompact devices by mechanical exfoliation. The key parameter to sustain ferromagnetism in 2D is magnetic anisotropy—a tendency of spins to align in a certain crystallographic direction known as easy‐axis. In layered materials, two limits of easy‐axis are in‐plane (XY) and out‐of‐plane (Ising). Light polarization and the helicity of topological states can couple to magnetic anisotropy with promising photoluminescence or spin‐orbitronic functions. Here, a unique experiment is designed to control the easy‐axis, the magnetic transition temperature, and the optical gap simultaneously in a series of CrCl_3?xBr_x crystals between CrCl₃ with XY and CrBr₃ with Ising anisotropy. The easy‐axis is controlled between the two limits by varying spin–orbit coupling with the Br content in CrCl_3?x Br_x. The optical gap, magnetic transition temperature, and interlayer spacing are all tuned linearly with x. This is the first report of controlling exchange anisotropy in a layered crystal and the first unveiling of mixed halide chemistry as a powerful technique to produce functional materials for spintronic devices.     

Engineering Co2MnAlxSi1−x Heusler Compounds as a Model System to Correlate Spin Polarization,Intrinsic Gilbert Damping,and Ultrafast Demagnetization

Engineering of magnetic materials for developing better spintronic applications relies on the control of two key parameters: the spin polarization and the Gilbert damping, responsible for the spin angular momentum dissipation. Both of them are expected to affect the ultrafast magnetization dynamics occurring on the femtosecond timescale. Here, engineered Co₂MnAl_xSi_1-x Heusler compounds are used to adjust the degree of spin polarization at the Fermi energy, P, from 60% to 100% and to investigate how they correlate with the damping. It is experimentally demonstrated that the damping decreases when increasing the spin polarization from 1.1 × 10⁻³ for Co₂MnAl with 63% spin polarization to an ultralow value of 4.6 × 10⁻⁴ for the half-metallic ferromagnet Co₂MnSi. This allows the investigation of the relation between these two parameters and the ultrafast demagnetization time characterizing the loss of magnetization occurring after femtosecond laser pulse excitation. The demagnetization time is observed to be inversely proportional to 1 – P and, as a consequence, to the magnetic damping, which can be attributed to the similarity of the spin angular momentum dissipation processes responsible for these two effects. Altogether, the high-quality Heusler compounds allow control over the band structure and therefore the channel for spin angular momentum dissipation.     

Unconventional Charge–Spin Conversion in Weyl-Semimetal WTe2

An outstanding feature of topological quantum materials is their novel spin topology in the electronic band structures with an expected large charge-to-spin conversion efficiency. Here, a charge-current-induced spin polarization in the type-II Weyl semimetal candidate WTe₂ and efficient spin injection and detection in a graphene channel up to room temperature are reported. Contrary to the conventional spin Hall and Rashba–Edelstein effects, the measurements indicate an unconventional charge-to-spin conversion in WTe₂, which is primarily forbidden by the crystal symmetry of the system. Such a large spin polarization can be possible in WTe₂ due to a reduced crystal symmetry combined with its large spin Berry curvature, spin–orbit interaction with a novel spin-texture of the Fermi states. A robust and practical method is demonstrated for electrical creation and detection of such a spin polarization using both charge-to-spin conversion and its inverse phenomenon and utilized it for efficient spin injection and detection in the graphene channel up to room temperature. These findings open opportunities for utilizing topological Weyl materials as nonmagnetic spin sources in all-electrical van der Waals spintronic circuits and for low-power and high-performance nonvolatile spintronic technologies.     

Highly Durable Spin Filter Switching Based on Self-Assembled Chiral Molecular Motor

Chiral molecules have recently received renewed interest as highly efficient sources of spin-selective charge emission known as chiral-induced spin selectivity (CISS), which potentially offers a fascinating utilization of organic chiral materials in novel solid-state spintronic devices. However, a practical use of CISS remains far from completion, and rather fundamental obstacles such as (i) external controllability of spin, (ii) function durability, and (iii) improvement of spin-polarization efficiency have not been surmounted to date. In this study, these issues are addressed by developing a self-assembled monolayer (SAM) of overcrowded alkene (OCA)-based molecular motor. With this system, it is successfully demonstrated that the direction of spin polarization can be externally and repeatedly manipulated in an extremely stable manner by switching the molecular chirality, which is achieved by a formation of the covalent bonds between the molecules and electrode. In addition, it is found that a higher stereo-ordering architecture of the SAM of OCAs tailored by mixing them with simple alkanethiols considerably enhances the efficiency of spin polarization per a single OCA molecule. All these findings provide the creditable feasibility study for strongly boosting development of CISS-based spintronic devices that can simultaneously fulfill the controllability, durability, and high spin-polarization efficiency.     

Robust Room-Temperature Ferromagnetism with Giant Anisotropy in Nd-Doped ZnO Nanowire Arrays

As an important class of spintronic material, ferromagnetic oxide semiconductors are characterized with both charge and spin degrees of freedom, but they often show weak magnetism and small coercivity, which limit their applications. In this work, we synthesized Nd-doped ZnO nanowire arrays which exhibit stable room temperature ferromagnetism with a large saturation magnetic moment of 4.1 μ(B)/Nd as well as a high coercivity of 780 Oe, indicating giant magnetic anisotropy. First-principles calculations reveal that the remarkable magnetic properties in Nd-doped ZnO nanowires can be ascribed to the intricate interplay between the spin moments and the Nd-derived orbital moments. Our complementary experimental and theoretical results suggest that these magnetic oxide nanowires obtained by the bottom-up synthesis are promising as nanoscale building blocks in spintronic devices.     

Anisotropic and high magnetization rare earth transition metal compounds containing metalloids

The structural and magnetic behavior is presented for selected metalloid (B,C) containing hexagonal and tetragonal rare earth-transition metal compounds and compound series. Focus is on materials with high Fe content and resulting high magnetizations. The unusual axial ratios and features of the sheet type structures of these materials have pronounced consequences on such properties as magnetic anisotropy and magnetic hardness. Individual site anisotropy contributions are studied by temperature dependence of magnetization along easy and hard magnetic axes. As an example it is found that tetragonal Nd₂Fe₁₄B has axial anisotropy with H_A = 76 kOe at 300 K but shows tendencies for a spin reorientation around 150 K. Y₂Fe₁₄B has axial anisotropy with H_A = 25 kOe but does not exhibit a similar spin reorientation. This indicates that the two crystallographic Nd sites (4f and 4g) have axis and plane preference respectively, with different temperature dependencies. Axial Nd anisotropy is a consequence of the lack of Nd coordination along the z axis due to intervening thick Fe layers. Both extrinsic (fine particle) and intrinsic magnetic hardness is observed. Crystallographically disordered materials show intrinsic hardness based on domain wall pinning by local fluctuations of magnetic parameters. Strong nucleation phenomena are characteristic for ordered materials in bulk and powder form. The unusually high achievable ratios of extrinsic coercivities to anisotropy fields in the metalloid stabilized materials are related to their chemically relatively inert layer structure. This appears to lead to less corrugated surface structures and is so responsible for the characteristic domain wall nucleation processes.     

Large Magnetoresistance through a Single Molecule due to a Spin-Split Hybridized Orbital

Using organic materials in spintronic devices raises a lot of expectation for future applications due to their flexibility, low cost, long spin lifetime, and easy functionalization. However, the interfacial hybridization and spin polarization between the organic layer and the ferromagnetic electrodes still has to be understood at the molecular scale. Coupling state-of-the-art spin-polarized scanning tunneling spectroscopy and spin-resolved ab initio calculations, we give the first experimental evidence of the spin splitting of a molecular orbital on a single non magnetic C(60) molecule in contact with a magnetic material, namely, the Cr(001) surface. This hybridized molecular state is responsible for an inversion of sign of the tunneling magnetoresistance depending on energy. This result opens the way to spin filtering through molecular orbitals.     

Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers

Magnetically engineered magnetic tunnel junctions (MTJs) show promise as non-volatile storage cells in high-performance solid-state magnetic random access memories (MRAM). The performance of these devices is currently limited by the modest (< approximately 70%) room-temperature tunnelling magnetoresistance (TMR) of technologically relevant MTJs. Much higher TMR values have been theoretically predicted for perfectly ordered (100) oriented single-crystalline Fe/MgO/Fe MTJs. Here we show that sputter-deposited polycrystalline MTJs grown on an amorphous underlayer, but with highly oriented (100) MgO tunnel barriers and CoFe electrodes, exhibit TMR values of up to approximately 220% at room temperature and approximately 300% at low temperatures. Consistent with these high TMR values, superconducting tunnelling spectroscopy experiments indicate that the tunnelling current has a very high spin polarization of approximately 85%, which rivals that previously observed only using half-metallic ferromagnets. Such high values of spin polarization and TMR in readily manufactureable and highly thermally stable devices (up to 400 degrees C) will accelerate the development of new families of spintronic devices.     

Half-Metallic Ferromagnetism in Strontium-Doped III–V: Ab Initio Calculations

First-principle calculations are employed by means of an all-electron full-potential linearized augmented plane wave to investigate the electronic structure and magnetic properties of AlP, AlAs, GaP, GaAs, InP, and InAs-based dilute magnetic semiconductors (DMS) with Sr impurities. It is shown that, in all the cases the ferromagnetic phase is energetically favored with respect to the paramagnetic one. In addition, these alloys are found to be half-metallic ferromagnets with a net total magnetic moment of 1.00 μ _B when they assume the zinc-blende structure at the equilibrium lattice constant. Ferromagnetism is induced by the spin polarization of the p shells of anions; the magnetic moment mainly comes from anion atoms surrounding the dopant atom, which is different from conventional DMS. These theoretical results make these materials interesting candidates for spin injection in spintronic devices.     

A spin wave resonance study on reentrant Au77Fe23 films

Thin films prepared by both flash and slow evaporation of the bulk Au₇₇Fe₂₃ alloy have been studied by electron spin resonance (ESR) technique at the temperature range between 77–300 K. A series of spin wave resonance (SWR) peaks were observed at all temperatures when the external de magnetic field is applied along the directions lying in a small angular interval with respect to the film normal. The classical spin wave model has been used to analyze the experimental data. The magnetic parameters, such as exchange stiffness constant, the effective bulk and the surface anisotropy energy parameters of the system have been derived as a function of temperature. While the easy plane surface anisotropy almost remains constant, considerable increments were found in the exchange parameter, the magnetization and the linewidth with decreasing temperature. The SWR linewidths for the films obtained by slow evaporation at higher substrate temperatures are noticeably smaller compared to those of the film prepared by flash evaporation technique.     

Ballistic electron transport in a nanostructure under the influence of magnetic barriers and δ-doping

The electron transport properties are theoretically investigated in a nanostructure under the influence of magnetic barriers and the δ-doping. The resulting transmission and spin polarization are strongly dependent on the weight of δ-doping. It is shown that the large spin polarization can be achieved due to the remarkable discrepancy in the transmission for electrons with opposite spin orientations. It is also shown that both the transmission probability and the spin polarization periodically change with the increase of L. These interesting features will be more helpful for developing new types of spintronic devices.     

Ballistic electron transport in a nanostructure under the influence of magnetic barriers and δ-doping

The electron transport properties are theoretically investigated in a nanostructure under the influence of magnetic barriers and the δ-doping. The resulting transmission and spin polarization are strongly dependent on the weight of δ-doping. It is shown that the large spin polarization can be achieved due to the remarkable discrepancy in the transmission for electrons with opposite spin orientations. It is also shown that both the transmission probability and the spin polarization periodically change with the increase of L. These interesting features will be more helpful for developing new types of spintronic devices.     

First-Principle Investigation of Structural,Electronic and Magnetic Properties in Mn<Subscript>2</Subscript>RhZ (Z = Si,Ge, and Sn) Heusler Alloys

Mn ₂-based Heusler compounds exhibit different types of anti-site disorder. The electronic structure and magnetism of Heusler alloys Mn₂RhZ (Z = Si, Ge, and Sn) have been studied by first-principle calculations. Mn₂RhSi and Mn₂RhGe are ordinary half-metallic ferrimagnetic metals at equilibrium lattice constants, with a magnetic spin moments obeys to the Slater-Pauling rule and spin polarization of 100 % at the Fermi energy. The tetragonal phase transformation is studied for Mn₂RhSn. The total magnetic moment of Mn₂RhSn in the tetragonal structure is higher compared to the other materials, which results in a large ΔM between the saturation moments of tetragonal and a cubic. The tetragonal Mn₂RhSn predicted to a high spin polarization ratio of 93 %. These properties of these materials are particularly interesting due to their perpendicular magnetic anisotropy (PMA), which was realized in thin films opening the door for application in STT magnetic random access memories (STT-MRAMs)     

Electric-field-assisted switching in magnetic tunnel junctions

The advent of spin transfer torque effect accommodates site-specific switching of magnetic nanostructures by current alone without magnetic field. However, the critical current density required for usual spin torque switching remains stubbornly high around 10(6)-10(7) A cm(-2). It would be fundamentally transformative if an electric field through a voltage could assist or accomplish the switching of ferromagnets. Here we report electric-field-assisted reversible switching in CoFeB/MgO/CoFeB magnetic tunnel junctions with interfacial perpendicular magnetic anisotropy, where the coercivity, the magnetic configuration and the tunnelling magnetoresistance can be manipulated by voltage pulses associated with much smaller current densities. These results represent a crucial step towards ultralow energy switching in magnetic tunnel junctions, and open a new avenue for exploring other voltage-controlled spintronic devices.