共查询到18条相似文献,搜索用时 62 毫秒
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本文采用直流磁控溅射法和多次沉积与掩膜技术,在n+Si(100)衬底上制备了一系列厚度不同的ZnO薄膜,表面镀Au的探针与ZnO/n+-Si构成了一系列ZnO层厚不同的Au/ZnO/n+-Si薄膜压敏电阻器.利用X射线衍射确定沉积的ZnO薄膜为高度c轴(0002)取向的晶体薄膜,利用紫外-可见透射光谱对沉积的ZnO薄膜... 相似文献
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采用真空共蒸发法制备了Cd1-xZnxS多晶薄膜,研究了Cd1-xZnxS(x=0.88)多晶薄膜的结构与光电特性。XRD的结果表明,0x≤0.9,Cd1-xZnxS薄膜为六方结构,高度择优取向;荧光光谱分析与Ve-gard定理的结果以及石英振荡法监测的Cd1-xZnxS多晶薄膜的组分吻合;制备的Cd1-xZnxS多晶薄膜的光学透射谱的吸收边随Zn含量的增加发生蓝移,其光学能隙调制在CdS与ZnS能隙之间;最后测量了Cd1-xZnxS薄膜室温电阻率及暗电导率随温度的变化情况,计算了Cd1-xZnxS薄膜的电导激活能。 相似文献
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氮的掺入能够改善 a-Si∶H 的光电导性。用 ESR 方法难以分析其原因。吸收系数的弱吸收段却能显示出氮造成 a-Si∶H 缺陷态密度的变小。当掺氮量 x(?)0.01时,a-Si_(1-x)N_x 之ημT 值呈最大,在 E_(?)下1.2eV 处缺陷态密度最低,约3.3×10~(15)/cm~3。过量地掺氮则导致缺陷态密度增加,光电导降低。 相似文献
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采用丝网印刷法在95%(质量比)Al2O3基板上制备MgO薄膜,在大气环境1650℃下烧结使MgO与Al203基板反应形成(Mg0.527Al0473)(Al1758Mg0.12)O4薄膜(MAO).通过X射线衍射仪、扫描电子显微镜、能谱仪、X射线光电子能谱仪和激光共聚焦显微镜分别对MAO薄膜的结构、微观形貌、成分和表... 相似文献
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以金属有机化合物(MO)四甲基锡[sn(CH_3)_4]为源物质,利用等离子体增强化学气相沉积技术,分别在单晶硅片、三氧化二铝陶瓷基片上淀积了纯净的SnO_(2-x)薄膜,对淀积的一些工艺条件,膜的结构、成分和薄膜元件的气敏性能进行了研究,并与普通PECVDSnO_(2-x)薄膜元件的气敏性能作了比较,对SnO_(2-x)膜的气敏机理作了探讨。 相似文献
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Precise control of composition and internal structure is essential for a variety of novel technological applications which require highly tailored binary quantum dots (QDs) with predictable optoelectronic and mechanical properties. The delicate balancing act between incoming flux and substrate temperature required for the growth of compositionally graded (Si(1-x)C(x); x varies throughout the internal structure), core-multishell (discrete shells of Si and C or combinations thereof) and selected composition (x set) QDs on low-temperature plasma/ion-flux-exposed Si(100) surfaces is investigated via a hybrid numerical simulation. Incident Si and C ions lead to localized substrate heating and a reduction in surface diffusion activation energy. It is shown that by incorporating ions in the influx, a steady-state composition is reached more quickly (for selected composition QDs) and the composition gradient of a Si(1-x)C(x) QD may be fine tuned; additionally (with other deposition conditions remaining the same), larger QDs are obtained on average. It is suggested that ionizing a portion of the influx is another way to control the average size of the QDs, and ultimately, their internal structure. Advantages that can be gained by utilizing plasma/ion-related controls to facilitate the growth of highly tailored, compositionally controlled quantum dots are discussed as well. 相似文献
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采用磁控溅射工艺,在玻璃基片上制备了Zn1-xCoxO(x=0.02~0.15)稀磁半导体薄膜。采用X-射线衍射(XRD)、X射线光电子能谱(XPS)、原子力显微镜(AFM)、振动样品磁强计(VSM)研究了薄膜的相结构、化学成分及价态、表面形貌和磁性能。结果表明,本实验条件下,薄膜不存在Co及Co的氧化物相,薄膜中Zn的化学价为+2,Co则以+2和+4价的形式存在;薄膜晶体结构为c轴取向生长的六方纤锌矿结构;薄膜表面平整致密。在温度为300 K时,Zn0.9Co0.1O薄膜呈铁磁效应,在M-H曲线中观测到明显的磁滞回线特征。 相似文献
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Co掺杂量对ZnO薄膜结构及光学特性的影响 总被引:1,自引:0,他引:1
采用脉冲激光沉积法(PLD)在SiO2村底上成功制备了具有c轴择优生长特性的Zn1-xCoxO(x=0.05、0.1、0.2、0.3)系列薄膜.通过X射线衍射和能谱仪研究了Co掺杂量对薄膜晶体结构和成分的影响;同时利用光致发光谱(PL)和透过率研究了薄膜的光学特性.结果表明,当掺杂浓度为10%时,薄膜生长最好,c轴择优生长最为显著;Co元素的掺入改变了薄膜的紫外、绿光和蓝光发射,分析认为主要是Co元素的掺入量改变了薄膜的禁带宽度、氧错位缺陷浓度和锌填隙缺陷的浓度;Co元素掺杂浓度为5%时,薄膜的透过率超过90%.此外,探讨了不同波段光发射的可能机理. 相似文献
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利用流变相反应法制备得到Zn1-xCoxO(x=0.02、0.04、0.06、0.08)稀磁半导体材料。X射线衍射分析,发现Co的掺杂并未改变ZnO的纤锌矿结构,并没有杂质相的生成,衍射峰的峰位随着Co掺杂向高角度移动,Co已进入ZnO晶格。电镜及吸收光谱进一步表明样品中没有第二相的出现,Co2+成功掺入ZnO晶格。采用超导量子干涉磁强仪测量Zn0.96Co0.04O的磁性,样品在300K存在明显的磁饱和现象和磁滞回线,表明具有室温下铁磁性,其磁性来源可以用束缚磁极化子(BMPs)模型解释。 相似文献
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Hexagonal Al(x)Ga(1-x)N nanorods were grown by plasma-assisted molecular beam epitaxy (PAMBE) on Si(001) substrates. The Al mole fraction was determined from x-ray diffraction (XRD) measurement and its value was varied from 0 to 15. It is found that, under group III-rich conditions, the growth rate of the Al(x)Ga(1-x)N nanorods decreases and the diameter increases due to the possibility of incorporation of aluminium and gallium. In order to study structural and optical properties, x-ray diffraction and cathodoluminescence (CL) measurements were carried out. The Al content (x) is calculated from these measurements and their values are compared. 相似文献