Decoherence of nuclear spin quantum memory in a quantum dot

Recently, an ensemble of nuclear spins in a quantum dot have been proposed as a long-lived quantum memory. A quantum state of an electron spin in the dot can be faithfully transfered into nuclear spins through controlled hyperfine coupling. Here we study the decoherence of this memory due to nuclear spin dipolar coupling and inhomogeneous hyperfine interaction during the storage period. We calculated the maximum fidelity of writing, storing, and reading operations. Our results show that nuclear spin dynamics can severely limit the performance of the proposed device for quantum information processing and storage based on nuclear spins.     

Site-Controlled Uniform Ge/Si Hut Wires with Electrically Tunable Spin–Orbit Coupling

Semiconductor nanowires have been playing a crucial role in the development of nanoscale devices for the realization of spin qubits, Majorana fermions, single photon emitters, nanoprocessors, etc. The monolithic growth of site-controlled nanowires is a prerequisite toward the next generation of devices that will require addressability and scalability. Here, combining top-down nanofabrication and bottom-up self-assembly, the growth of Ge wires on prepatterned Si (001) substrates with controllable position, distance, length, and structure is reported. This is achieved by a novel growth process that uses a SiGe strain-relaxation template and can be potentially generalized to other material combinations. Transport measurements show an electrically tunable spin–orbit coupling, with a spin–orbit length similar to that of III–V materials. Also, charge sensing between quantum dots in closely spaced wires is observed, which underlines their potential for the realization of advanced quantum devices. The reported results open a path toward scalable qubit devices using nanowires on silicon.     

Fast control of nuclear spin polarization in an optically pumped single quantum dot

Highly polarized nuclear spins within a semiconductor quantum dot induce effective magnetic (Overhauser) fields of up to several Tesla acting on the electron spin, or up to a few hundred mT for the hole spin. Recently this has been recognized as a resource for intrinsic control of quantum-dot-based spin quantum bits. However, only static long-lived Overhauser fields could be used. Here we demonstrate fast redirection on the microsecond timescale of Overhauser fields on the order of 0.5 T experienced by a single electron spin in an optically pumped GaAs quantum dot. This has been achieved using coherent control of an ensemble of 10(5) optically polarized nuclear spins by sequences of short radiofrequency pulses. These results open the way to a new class of experiments using radiofrequency techniques to achieve highly correlated nuclear spins in quantum dots, such as adiabatic demagnetization in the rotating frame leading to sub-μK nuclear spin temperatures, rapid adiabatic passage, and spin squeezing.     

Hole spin relaxation in Ge-Si core-shell nanowire qubits

Controlling decoherence is the biggest challenge in efforts to develop quantum information hardware. Single electron spins in gallium arsenide are a leading candidate among implementations of solid-state quantum bits, but their strong coupling to nuclear spins produces high decoherence rates. Group IV semiconductors, on the other hand, have relatively low nuclear spin densities, making them an attractive platform for spin quantum bits. However, device fabrication remains a challenge, particularly with respect to the control of materials and interfaces. Here, we demonstrate state preparation, pulsed gate control and charge-sensing spin readout of hole spins confined in a Ge-Si core-shell nanowire. With fast gating, we measure T(1) spin relaxation times of up to 0.6 ms in coupled quantum dots at zero magnetic field. Relaxation time increases as the magnetic field is reduced, which is consistent with a spin-orbit mechanism that is usually masked by hyperfine contributions.     

Charge sensing of precisely positioned p donors in Si

Real-time sensing of (spin-dependent) single-electron tunneling is fundamental to electrical readout of qubit states in spin quantum computing. Here, we demonstrate the feasibility of detecting such single-electron tunneling events using an atomically planar charge sensing layout, which can be readily integrated in scalable quantum computing architectures with phosphorus-donor-based spin qubits in silicon (Si:P). Using scanning tunneling microscopy (STM) lithography on a Si(001) surface, we patterned a single-electron transistor (SET), both tunnel and electrostatically coupled to a coplanar ultrasmall quantum dot, the latter consisting of approximately four P donors. Charge transitions of the quantum dot could be detected both in time-averaged and single-shot current response of the SET. Single electron tunneling between the quantum dot and the SET island on a time-scale (τ ～ ms) two-orders-of-magnitude faster than the spin-lattice relaxation time of a P donor in Si makes this device geometry suitable for projective readout of Si:P spin qubits. Crucial to scalability is the ability to reproducibly achieve sufficient electron tunnel rates and charge sensitivity of the SET. The inherent atomic-scale control of STM lithography bodes extremely well to precisely optimize both of these parameters.     

Ab initio study of phosphorus donors acting as quantum bits in silicon nanowires

A phosphorus (P) donor has been extensively studied in bulk Si to realize the concept of Kane quantum computers. In most cases the quantum bit was realized as an entanglement between the donor electron spin and the nonzero nuclei spin of the donor impurity mediated by the hyperfine coupling between them. The donor ionization energies and the spin-lattice relaxation time limited the temperatures to a few kelvin in these experiments. Here, we demonstrate by means of ab initio density functional theory calculations that quantum confinement in thin Si nanowires (SiNWs) results in (i) larger excitation energies of donor impurity and (ii) a sensitive manipulation of the hyperfine coupling by external electric field. We propose that these features may allow to realize the quantum bit (qubit) experiments at elevated temperatures with a strength of electric fields applicable in current field-effect transistor technology. We also show that the strength of quantum confinement and the presence of strain induced by the surface termination may significantly affect the ground and excited states of the donors in thin SiNWs, possibly allowing an optical read-out of the electron spin.     

Quantum oscillations in magnetically doped colloidal nanocrystals

Progress in the synthesis of colloidal quantum dots has recently provided access to entirely new forms of diluted magnetic semiconductors, some of which may find use in quantum computation. The usefulness of a spin qubit is defined by its Rabi frequency, which determines the operation time, and its coherence time, which sets the error correction window. However, the spin dynamics of magnetic impurity ions in colloidal doped quantum dots remain entirely unexplored. Here, we use pulsed electron paramagnetic resonance spectroscopy to demonstrate long spin coherence times of ～0.9 μs in colloidal ZnO quantum dots containing the paramagnetic dopant Mn(2+), as well as Rabi oscillations with frequencies ranging between 2 and 20 MHz depending on microwave power. We also observe electron spin echo envelope modulations of the Mn(2+) signal due to hyperfine coupling with protons outside the quantum dots, a situation unique to the colloidal form of quantum dots, and not observed to date.     

Electrical control of a solid-state flying qubit

Solid-state approaches to quantum information technology are attractive because they are scalable. The coherent transport of quantum information over large distances is a requirement for any practical quantum computer and has been demonstrated by coupling super-conducting qubits to photons. Single electrons have also been transferred between distant quantum dots in times shorter than their spin coherence time. However, until now, there have been no demonstrations of scalable 'flying qubit' architectures-systems in which it is possible to perform quantum operations on qubits while they are being coherently transferred-in solid-state systems. These architectures allow for control over qubit separation and for non-local entanglement, which makes them more amenable to integration and scaling than static qubit approaches. Here, we report the transport and manipulation of qubits over distances of 6?μm within 40?ps, in an Aharonov-Bohm ring connected to two-channel wires that have a tunable tunnel coupling between channels. The flying qubit state is defined by the presence of a travelling electron in either channel of the wire, and can be controlled without a magnetic field. Our device has shorter quantum gates (<1?μm), longer coherence lengths (～86?μm at 70?mK) and higher operating frequencies (～100?GHz) than other solid-state implementations of flying qubits.     

Atomic-scale magnetometry of distant nuclear spin clusters via nitrogen-vacancy spin in diamond

The detection of single nuclear spins is an important goal in magnetic resonance spectroscopy. Optically detected magnetic resonance can detect single nuclear spins that are strongly coupled to an electron spin, but the detection of distant nuclear spins that are only weakly coupled to the electron spin has not been considered feasible. Here, using the nitrogen-vacancy centre in diamond as a model system, we numerically demonstrate that it is possible to detect two or more distant nuclear spins that are weakly coupled to a centre electron spin if these nuclear spins are strongly bonded to each other in a cluster. This cluster will stand out from other nuclear spins by virtue of characteristic oscillations imprinted onto the electron spin decoherence profile, which become pronounced under dynamical decoupling control. Under many-pulse dynamical decoupling, the centre electron spin coherence can be used to measure nuclear magnetic resonances of single molecules. This atomic-scale magnetometry should improve the performance of magnetic resonance spectroscopy for applications in chemical, biological, medical and materials research, and could also have applications in solid-state quantum computing.     

束流密度对Ge/Si量子点溅射生长的影响

采用离子束溅射技术在Si基底上自组织生长了一系列Ge量子点样品,研究了束流密度对Ge/Si量子点的尺寸分布和形貌演变的影响。原子力显微镜测试结果表明,随着束流密度的增加,量子点的面密度持续增大,其尺寸不断减小,量子点的形貌由圆顶形转变为过渡圆顶形。计算直径标准偏差的结果表明,当束流密度为0.86mA/cm2时,量子点的尺寸均匀性最佳。束流密度与沉积速率成正比,影响着表面吸附原子与其它原子相遇而形成晶核的能力。     

Influence of Si interdiffusion on carbon-induced growth of Ge quantum dots: a strategy for tuning island density

We have studied the epitaxial growth of self-assembled Ge quantum dots when a submonolayer of carbon is deposited on a Ge wetting layer (WL) prior to the growth of the dots. Using atomic-force microscopy combined with optical techniques like Raman and ellipsometry, we performed a systematic study of the role played by thermally activated Si interdiffusion on dot density, composition and morphology, by changing only the growth temperature T(WL) of the WL. Strikingly, we observe that higher dot densities and a narrower size distribution are achieved by increasing the deposition temperature T(WL), i.e.?by enhancing Si interdiffusion from the substrate. We suggest a two-stage growth procedure for fine tuning of dot topography (density, shape and size) useful for possible optoelectronic applications.     

Metal-induced assembly of a semiconductor island lattice: Ge truncated pyramids on Au-patterned Si

We report the two-dimensional alignment of semiconductor islands using rudimentary metal patterning to control nucleation and growth. In the Ge on Si system, a square array of submicron Au dots on the Si (001) surface induces the assembly of deposited Ge adatoms into an extensive island lattice. Remarkably, these highly ordered Ge islands form between the patterned Au dots and are characterized by a unique truncated pyramidal shape. A model based on patterned diffusion barriers explains the observed ordering and establishes general criteria for the broader applicability of such a directed assembly process to quantum dot ordering.     

Sb mediated formation of Ge/Si quantum dots: Growth and properties

The phenomenon of surfactant (Sb) mediated formation of Ge/Si(100) islands (quantum dots) by means of molecular beam epitaxy is discussed. The limited diffusivity of Si and Ge adatoms caused by the Sb layer leads to a reduction of the size of Ge islands, the increase in the island density, and the sharpening of the interfaces of Ge islands. Thereby, a thin Sb layer is considered to be a powerful tool that provides more freedom in designing Ge quantum dot features. Ge quantum dots, grown via a thin Sb layer and embedded coherently in a Si p-n junction, are revealed to be the origin of the intense photo- and electroluminescence in the spectral range of about 1.5 μm at room temperature.     

Three-dimensional Si/Ge quantum dot crystals

Modern nanotechnology offers routes to create new artificial materials, widening the functionality of devices in physics, chemistry, and biology. Templated self-organization has been recognized as a possible route to achieve exact positioning of quantum dots to create quantum dot arrays, molecules, and crystals. Here we employ extreme ultraviolet interference lithography (EUV-IL) at a wavelength of lambda = 13.5 nm for fast, large-area exposure of templates with perfect periodicity. Si(001) substrates have been patterned with two-dimensional hole arrays using EUV-IL and reactive ion etching. On these substrates, three-dimensionally ordered SiGe quantum dot crystals with the so far smallest quantum dot sizes and periods both in lateral and vertical directions have been grown by molecular beam epitaxy. X-ray diffractometry from a sample volume corresponding to about 3.6 x 10(7) dots and atomic force microscopy (AFM) reveal an up to now unmatched structural perfection of the quantum dot crystal and a narrow quantum dot size distribution. Intense interband photoluminescence has been observed up to room temperature, indicating a low defect density in the three-dimensional (3D) SiGe quantum dot crystals. Using the Ge concentration and dot shapes determined by X-ray and AFM measurements as input parameters for 3D band structure calculations, an excellent quantitative agreement between measured and calculated PL energies is obtained. The calculations show that the band structure of the 3D ordered quantum dot crystal is significantly modified by the artificial periodicity. A calculation of the variation of the eigenenergies based on the statistical variation in the dot dimensions as determined experimentally (+/-10% in linear dimensions) shows that the calculated electronic coupling between neighboring dots is not destroyed due to the quantum dot size variations. Thus, not only from a structural point of view but also with respect to the band structure, the 3D ordered quantum dots can be regarded as artificial crystal.     

Ni induced lateral crystallization of high density Ge-dots/Si heterostructures

In this work, we propose a novel method for obtaining high-density Ge-dots/Si multilayered heterostructures. The high-density self-assembled Ge dots are firstly grown on a-Si layer using low-pressure chemical vapor deposition (LPCVD), and then low-temperature recrystallized by Ni based metal induced lateral crystallization (MILC). According to optical micrograph, microprobe Raman spectroscopy and transmission electron microscopy (TEM) observations, it has been found that the Ni induced lateral crystallized Si film has large leaf-like grains elongated along the MILC direction with (110) preference. The strain shift of Ge dots reveals the formation of high quality interface between the crystallized Si and Ge dot.     

The Effects of Electric Field on a Triangular Bound Potential Quantum Dot Qubit

On the condition of electron-LO-phonon strong coupling in a triangular bound potential quantum dot, we obtain the eigenenergy and eigenfuctions of the ground state and the first-excited state by using the Pekar type of variational method. This two-level system in a quantum dot can be employed as a qubit, which is a basic unit for quantum information operation and storage. Our numerical results indicate that the oscillation period of this qubit is an increasing function of the confinement length and the electric field. The influence of electric field on the period of oscillation becomes greater when the confinement length is increased. The electron probability density of the qubit is an increasing function of the electron-LO-phonon coupling constant. On the contrary, it is a decreasing function of the electric field. Meanwhile, the electron probability density varies periodically with the polar angle.     

Electrically tuned spin-orbit interaction in an InAs self-assembled quantum dot

Electrical control over electron spin is a prerequisite for spintronics spin-based quantum information processing. In particular, control over the interaction between the orbital motion and the spin state of electrons would be valuable, because this interaction influences spin relaxation and dephasing. Electric fields have been used to tune the strength of the spin-orbit interaction in two-dimensional electron gases, but not, so far, in quantum dots. Here, we demonstrate that electrical gating can be used to vary the energy of the spin-orbit interaction in the range 50-150 μeV while maintaining the electron occupation of a single self-assembled InAs quantum dot. We determine the spin-orbit interaction energy by observing the splitting of Kondo effect features at high magnetic fields.     

Transport properties of coupled semiconductor quantum dots

We have measured the electronic transport properties of the coupled quantum dot devices at low temperatures. The interplay between the strong many body spin interaction and the molecular states are probed in linear and non-linear transport regime. We observe the formation of strong coherent molecular states clearly visible in the double dot conductance phase diagram. In our study, the spin configuration in multiply coupled quantum dots could be identified using Kondo phenomenon. In addition, the characteristics of the spin dependent molecular states and phase dependant tunneling have been also observed using non-linear conductance measurement of the double dots. The results suggest the importance of the diverse spin related physical issues in artificial quantum dot devices.     

Cooperative arrangement of self-assembled Ge dots on pre-grown Si mesas

In this work, we report on the study of one-dimensional (1-D) and two-dimensional (2-D) cooperative arrangements of self-assembled Ge dots grown on patterned Si (001) substrates. Selective epitaxial growth (SEG) of Si mesas was first performed to form Si mesas before Ge deposition. Self-assembled growths of Ge dots with variable Ge amount have been carried out. It is found that the cooperative arrangements of Ge dots are dependent on Ge amount deposited. The cooperative arrangements is attributed to the self-regulation of the dot size and position, which is driven by the minimization of the total free energy including strain energy, surface energy and deformation repulsive energy. This cooperative arrangement promoted by the energetically preferential nucleation on Si mesas allows us to control the placement of the self-assembled dots at the specific positions.     

A triple quantum dot in a single-wall carbon nanotube

A top-gated single-wall carbon nanotube is used to define three coupled quantum dots in series between two electrodes. The additional electron number on each quantum dot is controlled by top-gate voltages allowing for current measurements of single, double, and triple quantum dot stability diagrams. Simulations using a capacitor model including tunnel coupling between neighboring dots captures the observed behavior with good agreement. Furthermore, anticrossings between indirectly coupled levels and higher order cotunneling are discussed.