Template-grown metal nanowires as resonators: performance and characterization of dissipative and elastic properties

Metal resonators can significantly extend the scope of nanoelectromechanical systems (NEMS) through access to a broader range of electrical, thermal, and surface properties. The material behavior of template-electrodeposited gold (Au) and rhodium (Rh) nanowires (NWs) and their performance as resonators was investigated. Nanowire integration by a bottom-up assembly scheme enabled creation of fixed-free metal beams without distortion or tension. Surprisingly, even a soft metal such as Au yielded viable nanocantilever resonators, with Q-factors of 600-950 in high vacuum, while stiffer RhNW had Q-factors of 1100-1300. NWs with diameter approximately 300 nm yield Young's modulus values of 44 +/- 12 GPa for Au and 222 +/- 70 GPa for Rh, both lower than bulk values. This observation is in agreement with two other measurement techniques.     

Wafer-scale assembly of highly ordered semiconductor nanowire arrays by contact printing

Controlled and uniform assembly of "bottom-up" nanowire (NW) materials with high scalability presents one of the significant bottleneck challenges facing the integration of nanowires for electronic applications. Here, we demonstrate wafer-scale assembly of highly ordered, dense, and regular arrays of NWs with high uniformity and reproducibility through a simple contact printing process. The assembled NW pitch is shown to be readily modulated through the surface chemical treatment of the receiver substrate, with the highest density approaching approximately 8 NW/mum, approximately 95% directional alignment, and wafer-scale uniformity. Such fine control in the assembly is attained by applying a lubricant during the contact printing process which significantly minimizes the NW-NW mechanical interactions, therefore enabling well-controlled transfer of nanowires through surface chemical binding interactions. Furthermore, we demonstrate that our printing approach enables large-scale integration of NW arrays for various device structures on both rigid silicon and flexible plastic substrates, with a controlled semiconductor channel width ranging from a single NW ( approximately 10 nm) up to approximately 250 microm, consisting of a parallel array of over 1250 NWs and delivering over 1 mA of ON current.     

Directed growth of horizontally aligned gallium nitride nanowires for nanoelectromechanical resonator arrays

We report the growth of horizontally aligned arrays and networks of GaN nanowires (NWs) as resonant components in nanoelectromechanical systems (NEMS). A combination of top-down selective area growth (SAG) and bottom-up vapor-liquid-solid (VLS) synthesis enables flexible fabrication of highly ordered nanowire arrays in situ with no postgrowth dispersion. Mechanical resonance of free-standing nanowires are measured, with quality factors (Q) ranging from 400 to 1000. We obtained a Young's modulus (E) of approximately 338 GPa from an array of NWs with varying diameters and lengths. The measurement allows detection of nanowire motion with a rotating frame and reveals dual fundamental resonant modes in two orthogonal planes. A universal ratio between the resonant frequencies of these two fundamental modes, irrespective of their dimensions, is observed and attributed to an isosceles cross section of GaN NWs.     

Diameter-dependent electromechanical properties of GaN nanowires

The diameter-dependent Young's modulus, E, and quality factor, Q, of GaN nanowires were measured using electromechanical resonance analysis in a transmission electron microscope. E is close to the theoretical bulk value ( approximately 300 GPa) for a large diameter nanowire (d=84 nm) but is significantly smaller for smaller diameters. At room temperature, Q is as high as 2,800 for d=84 nm, significantly greater than what is obtained from micromachined Si resonators of comparable surface-to-volume ratio. This implies significant advantages of smooth-surfaced GaN nanowire resonators for nanoelectromechanical system (NEMS) applications. Two closely spaced resonances are observed and attributed to the low-symmetry triangular cross section of the nanowires.     

Controllable positioning and alignment of silver nanowires by tunable hydrodynamic focusing

Assembly and alignment of nanowires or nanotubes are critical steps for integrating functional nanodevices by the bottom-up strategy. However, it is still challenging to manipulate either an array of nanowires or individual nanowires in a controllable manner. Here we present a simple but versatile method of positioning and aligning nanowires by hydrodynamic focusing that functions as 'hydro-tweezers'. By adjusting the flow duration and flow rates of the sheath flows and sample flow, the density, width and position of the nanowire arrays, as building blocks of nanodevices, can be readily tuned in the hydrodynamic focusing process. This approach exhibits great potentials in the assembly of an array of functional nanodevices. With this method, multiple nanowire arrays can be positioned and aligned on predefined locations. Further focusing the sample flow, nanowires flow in single file. Thus single nanowires can also be lined up and located to desired positions.     

Self-oscillations in field emission nanowire mechanical resonators: a nanometric dc-ac conversion

We report the observation of self-oscillations in a bottom-up nanoelectromechanical system (NEMS) during field emission driven by a constant applied voltage. An electromechanical model is explored that explains the phenomenon and that can be directly used to develop integrated devices. In this first study, we have already achieved approximately 50% dc/ac (direct to alternating current) conversion. Electrical self-oscillations in NEMS open up a new path for the development of high-speed, autonomous nanoresonators and signal generators and show that field emission (FE) is a powerful tool for building new nanocomponents.     

Enhanced absorption in silicon nanocone arrays for photovoltaics

Silicon nanowire arrays have been shown to demonstrate light trapping properties and promising potential for next-generation photovoltaics. In this paper, we performed systematic and detailed simulation studies on the optical properties of silicon nanocone arrays as compared to nanowires arrays. Nanocone arrays were found to have significantly improved solar absorption and efficiencies over nanowire arrays. Detailed simulations revealed that nanocones have superior absorption due to reduced reflection from their smaller tip and reduced transmission from their larger base. The enhanced efficiencies of silicon nanocone arrays were found to be insensitive to tip diameter, which should facilitate their fabrication. Breaking the vertical mirror symmetry of nanowires results in a broader absorption spectrum such that overall efficiencies are enhanced. We also evaluated the electric field intensity, carrier generation and angle-dependent optical properties of nanocones and nanowires to offer further physical insight into their light trapping properties.     

Directed three-dimensional patterning of self-assembled peptide fibrils

Molecular self-assembly is emerging as a viable "bottom-up" approach for fabricating nanostructures. Self-assembled biomolecular structures are particularly attractive, due to their versatile chemistry, molecular recognition properties, and biocompatibility. Among them, amyloid protein and peptide fibrils are self-assembled nanostructures with unique physical and chemical stability, formed from quite simple building blocks; their ability to work as a template for the fabrication of low resistance, conducting nanowires has already been demonstrated. The precise positioning of peptide-based nanostructures is an essential part of their use in technological applications, and their controlled assembly, positioning, and integration into microsystems is a problem of considerable current interest. To date, their positioning has been limited to their placement on flat surfaces or to the fabrication of peptide arrays. Here, we propose a new method for the precise, three-dimensional patterning of amyloid fibrils. The technique, which combines femtosecond laser technology and biotin-avidin mediated assembly on a polymeric matrix, can be applied in a wide variety of fields, from molecular electronics to tissue engineering.     

Precise Alignment of Single Nanowires and Fabrication of Nanoelectromechanical Switch and Other Test Structures

The integration of nanowires and nanotubes into electrical test structures to investigate their nanoelectronic transport properties is a significant challenge. Here, we present a single nanowire manipulation system to precisely maneuver and align individual nanowires. We show that a single nanowire can be picked up and transferred to a predefined location by electrostatic force. Compatible fabrication processes have been developed to simultaneously pattern multiple aligned nanowires by using one level of photolithography. In addition, we have fabricated and characterized representative devices and test structures including nanoelectromechanical switches with large on/off current ratios, bottom-gated silicon nanowire field-effect transistors, and both transfer-length-method and Kelvin test structures     

A local optical probe for measuring motion and stress in a nanoelectromechanical system

Nanoelectromechanical systems can be operated as ultrasensitive mass sensors and ultrahigh-frequency resonators, and can also be used to explore fundamental physical phenomena such as nonlinear damping and quantum effects in macroscopic objects. Various dissipation mechanisms are known to limit the mechanical quality factors of nanoelectromechanical systems and to induce aging due to material degradation, so there is a need for methods that can probe the motion of these systems, and the stresses within them, at the nanoscale. Here, we report a non-invasive local optical probe for the quantitative measurement of motion and stress within a nanoelectromechanical system, based on Fizeau interferometry and Raman spectroscopy. The system consists of a multilayer graphene resonator that is clamped to a gold film on an oxidized silicon surface. The resonator and the surface both act as mirrors and therefore define an optical cavity. Fizeau interferometry provides a calibrated measurement of the motion of the resonator, while Raman spectroscopy can probe the strain within the system and allows a purely spectral detection of mechanical resonance at the nanoscale.     

Motion transduction in nanoelectromechanical systems (NEMS) arrays using near-field optomechanical coupling

Development of efficient and sensitive motion transducers for arrays of nanoelectromechanical systems (NEMS) is important for fundamental research as well as for technological applications. Here, we report a single-wire nanomechanical transducer interface, which relies upon near-field optomechanical interactions. This multiplexed transducer interface comes in the form of a single-mode fiber taper on a fiber-optic cable. When the fiber taper is positioned sufficiently close to the NEMS array such that it can attain evanescent optical coupling with the array, individual NEMS resonances can be actuated using optical dipole forces. In addition, sensitive detection of nanomechanical motion can be realized when the evanescent waves confined around the taper are scattered by the motion. We have measured resonances from an array of 63 NEMS resonators with a displacement sensitivity of 2-8 pm·Hz(-1/2) at a detection power of ~100 μW (incident on the entire array).     

Wafer-scale nanopatterning and translation into high-performance piezoelectric nanowires

The development of a facile method for fabricating one-dimensional, precisely positioned nanostructures over large areas offers exciting opportunities in fundamental research and innovative applications. Large-scale nanofabrication methods have been restricted in accessibility due to their complexity and cost. Likewise, bottom-up synthesis of nanowires has been limited in methods to assemble these structures at precisely defined locations. Nanomaterials such as PbZr(x)Ti(1-x)O(3) (PZT) nanowires (NWs)--which may be useful for nonvolatile memory storage (FeRAM), nanoactuation, and nanoscale power generation--are difficult to synthesize without suffering from polycrystallinity or poor stoichiometric control. Here, we report a novel fabrication method which requires only low-resolution photolithography and electrochemical etching to generate ultrasmooth NWs over wafer scales. These nanostructures are subsequently used as patterning templates to generate PZT nanowires with the highest reported piezoelectric performance (d(eff) ～ 145 pm/V). The combined large-scale nanopatterning with hierarchical assembly of functional nanomaterials could yield breakthroughs in areas ranging from nanodevice arrays to nanodevice powering.     

Nanowires for integrated multicolor nanophotonics

Nanoscale light-emitting diodes (nanoLEDs) with colors spanning from the ultraviolet to near-infrared region of the electromagnetic spectrum were prepared using a solution-based approach in which emissive electron-doped semiconductor nanowires were assembled with nonemissive hole-doped silicon nanowires in a crossed nanowire architecture. Single- and multicolor nanoLED devices and arrays were made with colors specified in a predictable way by the bandgaps of the III-V and II-VI nanowire building blocks. The approach was extended to combine nanoscale electronic and photonic devices into integrated structures, where a nanoscale transistor was used to switch the nanoLED on and off. In addition, this approach was generalized to hybrid devices consisting of nanowire emitters assembled on lithographically patterned planar silicon structures, which could provide a route for integrating photonic devices with conventional silicon microelectronics. Lastly, nanoLEDs were used to optically excite emissive molecules and nanoclusters, and hence could enable a range of integrated sensor/detection "chips" with multiplexed analysis capabilities.     

Superior Thermoelectric Performance of SiGe Nanowires Epitaxially Integrated into Thermal Micro-Harvesters

Semiconductor nanowires have demonstrated fascinating properties with applications in a wide range of fields, including energy and information technologies. Particularly, increasing attention has focused on SiGe nanowires for applications in a thermoelectric generation. In this work, a bottom-up vapour-liquid-solid chemical vapour Deposition methodology is employed to integrate heavily boron-doped SiGe nanowires on thermoelectric generators. Thermoelectrical properties –, i.e., electrical and thermal conductivities and Seebeck coefficient – of grown nanowires are fully characterized at temperatures ranging from 300 to 600 K, allowing the complete determination of the Figure-of-merit, zT, with obtained values of 0.4 at 600 K for optimally doped nanowires. A correlation between doping level, thermoelectric performance, and elemental distribution is established employing advanced elemental mapping (synchrotron-based nano-X-ray fluorescence). Moreover, the operation of p-doped SiGe NWs integrated into silicon micromachined thermoelectrical generators is shown over standalone and series- and parallel-connected arrays. Maximum open circuit voltage of 13.8 mV and power output as high as 15.6 µW cm⁻² are reached in series and parallel configurations, respectively, operating upon thermal gradients generated with hot sources at 200 °C and air flows of 1.5 m s⁻¹. These results pave the way for direct application of SiGe nanowire-based micro-thermoelectric generators in the field of the Internet of Things.     

Microtubule-based gold nanowires and nanowire arrays

Biological structures are attractive as templates to form nanoscale architectures for electronics because of their dimensions and the ability to interact with inorganic materials. In this study, we report the fabrication and electrical properties of microtubule (MT)-templated Au nanowires, and methods for assembling Au nanowire arrays based on these templates. The adsorption of MTs on silicon substrates is an effective means for preserving the conformation of the MT and provides a convenient platform for electrical measurements. To improve the metallization of MTs, a photochemical route for gold reduction is adapted, which leads to continuous coverage. The conductivity values measured on micrometer-long nanowires are similar to those reported for other biotemplated gold nanowires. A protocol for fabricating arrays of MT-templated gold nanowires is demonstrated.     

Parallel arrays of Schottky barrier nanowire field effect transistors: Nanoscopic effects for macroscopic current output

We present novel Schottky barrier field effect transistors consisting of a parallel array of bottom-up grown silicon nanowires that are able to deliver high current outputs. Axial silicidation of the nanowires is used to create defined Schottky junctions leading to on/off current ratios of up to 10⁶. The device concept leverages the unique transport properties of nanoscale junctions to boost device performance for macroscopic applications. Using parallel arrays, on-currents of over 500 μA at a source-drain voltage of 0.5 V can be achieved. The transconductance is thus increased significantly while maintaining the transfer characteristics of single nanowire devices. By incorporating several hundred nanowires into the parallel array, the yield of functioning transistors is dramatically increased and deviceto-device variability is reduced compared to single devices. This new nanowirebased platform provides sufficient current output to be employed as a transducer for biosensors or a driving stage for organic light-emitting diodes (LEDs), while the bottom-up nature of the fabrication procedure means it can provide building blocks for novel printable electronic devices.      

图形化硅纳米线阵列的制备

本文主要研究了在常态(常温、常压等)条件下,利用金属催化化学腐蚀方法在硅片表面上大面积制备排列整齐、取向一致的硅纳米线阵列.同时,出于对后续制作硅纳米线传感器考虑,利用微电子标准加工工艺,以氮化硅做掩膜,通过选择合适的实验参数,在硅片表面选择性生长纳米线阵列,得到图形化的硅纳米线阵列.     

Ordered arrays of silicon nanowires produced by nanosphere lithography and molecular beam epitaxy

Because of their importance in fundamental research and possible applications in nanotechnology and nanoelectronics, semiconductor nanowires have attracted much interest. In addition to the growth itself, the control of the size and location is an essential problem. Here we show the growth of ordered arrays of vertically aligned silicon nanowires by molecular beam epitaxy using prepatterned arrays of gold droplets on Si(111) substrates. The ordered arrays of gold particles were produced by nanosphere lithography.     

Ultrathin silicon solar microcells for semitransparent, mechanically flexible and microconcentrator module designs

The high natural abundance of silicon, together with its excellent reliability and good efficiency in solar cells, suggest its continued use in production of solar energy, on massive scales, for the foreseeable future. Although organics, nanocrystals, nanowires and other new materials hold significant promise, many opportunities continue to exist for research into unconventional means of exploiting silicon in advanced photovoltaic systems. Here, we describe modules that use large-scale arrays of silicon solar microcells created from bulk wafers and integrated in diverse spatial layouts on foreign substrates by transfer printing. The resulting devices can offer useful features, including high degrees of mechanical flexibility, user-definable transparency and ultrathin-form-factor microconcentrator designs. Detailed studies of the processes for creating and manipulating such microcells, together with theoretical and experimental investigations of the electrical, mechanical and optical characteristics of several types of module that incorporate them, illuminate the key aspects.     

Nanoscale avalanche photodiodes for highly sensitive and spatially resolved photon detection

Integrating nanophotonics with electronics could enhance and/or enable opportunities in areas ranging from communications and computing to novel diagnostics. Light sources and detectors are important elements for integration, and key progress has been made using semiconducting nanowires and carbon nanotubes to yield electrically driven sources and photoconductor detectors. Detection with photoconductors has relatively poor sensitivity at the nanometre scale, and thus large amplification is required to detect low light levels and ultimately single photons with reasonable response time. Here, we report avalanche multiplication of the photocurrent in nanoscale p-n diodes consisting of crossed silicon-cadmium sulphide nanowires. Electrical transport and optical measurements demonstrate that the nanowire avalanche photodiodes (nanoAPDs) have ultrahigh sensitivity with detection limits of less than 100 photons, and subwavelength spatial resolution of at least 250 nm. Crossed nanowire arrays also show that nanoAPDs are reproducible and can be addressed independently without cross-talk. NanoAPDs and arrays could open new opportunities for ultradense integrated systems, sensing and imaging applications.