Nanoscale memory elements based on solid-state electrolytes

We report on the fabrication and characterization of nanoscale memory elements based on solid electrolytes. When combined with silver, chalcogenide glasses such as Se-rich Ge-Se are good solid electrolytes, exhibiting high Ag ion mobility and availability. By placing an anode that has oxidizable Ag and an inert cathode (e.g., Ni) in contact with a thin layer of such a material, a device is formed that has an intrinsically high resistance, but which can be switched to a low-resistance state at small voltage via reduction of the silver ions. An opposite bias will return the device to a high-resistance state, and this reversible switching effect is the basis of programmable metallization cell technology. In this paper, electron beam lithography was used to make sub-100-nm openings in polymethylmethacrylate layers used as the dielectric between the device electrodes. The solid electrolyte film was formed in these via-holes so that their small diameter defined the active switching area between the electrodes. The Ag-Ge-Se electrolyte was created by the photodiffusion, with or without thermal assistance, of an Ag layer into the Ge-Se base glass. Combined thermal and photodiffusion leads to a nanophase separated material with a dispersed Ag ion-rich material with an average crystallite size of 7.5 nm in a glassy insulating Ge-rich continuous phase. The nanoscale devices write at an applied bias as low as 0.2 V, erase by -0.5 V, and fall from over 10/sup 7/ /spl Omega/ to a low-resistance state (e.g., 10/sup 4/ /spl Omega/ for a 10-/spl mu/A programming current) in less than 100 ns. Cycling appears excellent with projected endurance well beyond 10/sup 11/ cycles.     

Vertically oriented carbon nanofiber based nanoelectromechanical switch

We present a proof-of-principle study of a vertically aligned carbon nanofiber switch and study relevant parameters via a model for a static switch. Vertically aligned freestanding carbon nanofibers are produced by plasma-enhanced chemical vapor deposition (PECVD) and their deflection under applied voltage is measured using an optical microscope. The deflection is compared with a static force balance model, which successfully predicts the switching behavior assuming a nanofiber modulus of 40 GPa, which is consistent with independent modulus measurements made in our laboratory. The model is then extended to explore constraints for implementing a vertically aligned nanotube switch into present CMOS process flow. Carbon nanofibers of less than 40 nm in diameter, which may be grown by current PECVD technology, are shown to be acceptable for device integration for current and future CMOS scaling. To accommodate varying tube sizes and architectures, a basic scaling relationship is developed to relate CMOS via parameters and nanofiber characteristics to programming voltage.     

Electrical actuation and readout in a nanoelectromechanical resonator based on a laterally suspended zinc oxide nanowire

In this paper, we present experimental results describing enhanced readout of the vibratory response of a doubly clamped zinc oxide (ZnO) nanowire employing a purely electrical actuation and detection scheme. The measured response suggests that the piezoelectric and semiconducting properties of ZnO effectively enhance the motional current for electromechanical transduction. For a doubly clamped ZnO nanowire resonator with radius ~10 nm and length ~1.91 μm, a resonant frequency around 21.4 MHz is observed with a quality factor (Q) of ~358 in vacuum. A comparison with the Q obtained in air (~242) shows that these nano-scale devices may be operated in fluid as viscous damping is less significant at these length scales. Additionally, the suspended nanowire bridges show field effect transistor (FET) characteristics when the underlying silicon substrate is used as a gate electrode or using a lithographically patterned in-plane gate electrode. Moreover, the Young's modulus of ZnO nanowires is extracted from a static bending test performed on a nanowire cantilever using an AFM and the value is compared to that obtained from resonant frequency measurements of electrically addressed clamped–clamped beam nanowire resonators.     

A semiconductor exciton memory cell based on a single quantum nanostructure

We demonstrate storage of excitons in a single nanostructure, a self-assembled quantum post. After generation, electrons and holes forming the excitons are separated by an electric field toward opposite ends of the quantum post inhibiting their radiative recombination. After a defined time, the spatially indirect excitons are reconverted to optically active direct excitons by switching the electric field. The emitted light of the stored exciton is detected in the limit of a single nanostructure and storage times exceeding 30 msec are demonstrated. We identify a slow tunneling of the electron out of the quantum post as the dominant loss mechanism by comparing the field dependent temporal decay of the storage signal to models for this process and radiative losses.     

Nanoscale two-bit/cell NAND silicon-oxide-nitride-oxide-silicon memory device with different tunneling oxide thicknesses

Nanoscale two-bit/cell NAND-type silicon-oxide-nitride-oxide-silicon (SONOS) flash memory devices with different tunneling oxide thicknesses were designed to reduce the short channel effect and the coupling interference. The process step and the electrical characteristics of the proposed SONOS memory devices were simulated by using SUPREM-4 and MEDICI, respectively. The short channel effect in the nanoscale two-bit/cell SONOS devices was decreased than that of the conventional devices due to a larger effective channel length. The drain current at the on-state of the proposed NAND SONOS memory devices decreased than that of the conventional NAND SONOS devices due to the high channel resistivity. The I on/I off ratio of the proposed NAND SONOS memory devices was larger than that of the conventional memory devices due to the dramatic decrease in the subthreshold current of the proposed devices. The electrical characteristics of the NAND SONOS memory devices with different tunneling oxide thicknesses were better than those of the conventional NAND SONOS devices.     

Solid-state AC breaker with parallel switched capacitor circuits for microgrid system

ABSTRACT

In this paper, a novel solid-state AC breaker, based on double-paralleled switched capacitors controlled with complementary pulse width modulation technique, is proposed for transition of microgrid due to its advantages of low di/dt stress to power devices and controllable resistance features. The circuit topology of the breaker is based on parallel switched capacitors, its operating and control theory are analyzed in detail to show its advantage in theory. The equivalent impedance of proposed parallel switched capacitor circuits is up to the switching frequencies, and the proposed switch is suitable for seamless transition between the island mode and grid-connected mode to reduce the current shock by changing the switching frequencies. Simulation and experimental results verify the effectiveness and feasibility of the new AC breaker.     

Organic memory capacitor device fabricated with Ag nanoparticles

In this study, it is demonstrated that an organic memory structure using pentacene and citrate-stabilized silver nanoparticles (Ag NPs) as charge storage elements on dielectric SiO2 layer and silicon substrate. The Ag NPs were synthesized by thermal reduction method of silver trifluoroacetate with oleic acid. The synthesized Ag NPs were analyzed with high resolution transmission electron microscopy (HRTEM) and selected area electron diffraction (SAED) for their crystalline structure. The capacitance versus voltage (C-V) curves obtained for the Ag NPs embedded capacitor exhibited flat-band voltage shifts, which demonstrated the presence of charge storages. The citrate-capping of the Ag NPs was confirmed by ultraviolet-visible (UV-VIS) and Fourier transformed infrared (FTIR) spectroscopy. With voltage sweeping of +/-7 V, a hysteresis loop having flatband voltage shift of 7.1 V was obtained. The hysteresis loop showed a counter-clockwise direction. In addition, electrical performance test for charge storage showed more than 10,000 second charge retention time. The device with Ag NPs can be applied to an organic memory device for flexible electronics.     

Nanoscale resistive switching devices for memory and computing applications

With the slowing down of the Moore’s law and fundamental limitations due to the von-Neumann bottleneck, continued improvements in computing hardware performance become increasingly more challenging. Resistive switching (RS) devices are being extensively studied as promising candidates for next generation memory and computing applications due to their fast switching speed, excellent endurance and retention, and scaling and three-dimensional (3D) stacking capability. In particular, RS devices offer the potential to natively emulate the functions and structures of synapses and neurons, allowing them to efficiently implement neural networks (NNs) and other in-memory computing systems for data intensive applications such as machine learning tasks. In this review, we will examine the mechanisms of RS effects and discuss recent progresses in the application of RS devices for memory, deep learning accelerator, and more faithful brain-inspired computing tasks. Challenges and possible solutions at the device, algorithm, and system levels will also be discussed.

     

Accurate subpicoampere current source based on a differentiating capacitor with software-controlled nonlinearity compensation

A high accuracy current source has been developed for the generation of very small currents (below 200 pA) based on applying a linear voltage ramp to a capacitor. Using software-controlled compensation for the nonlinearity of the voltage ramp, a stable current can be reached within a few seconds. A voltage ramp within typically 10/spl middot/10/sup -6/ of any desired value between less than 1 mV/s and several hundreds of mV/s can be realized. Using a high quality air-dielectric capacitor, currents below 200 pA can be generated with an uncertainty of 20 /spl mu/A/A (k = 2), with a lower limit of 2.0 aA (k = 2).     

On-line instantaneous torque control of a switched reluctance motor based on co-energy control

An on-line instantaneous torque control technique for a switched reluctance motor operating in the saturation region is presented. The proposed methodology is realised via the control of the instantaneous output torque of each excited phase by regulating its associated co-energy to follow a co-energy profile. As the parameters of the feedback controller are independent of the motor parameters in the analysis of the co-energy control system with the proposed methodology, the design of the proposed controller is simple when compared to that for traditional current controllers. Smooth shaft torque is obtained by torque sharing among the active phases during commutation. Simulation and experimental results confirm that the highfrequency torque ripple is reduced using the proposed algorithm.     

新型多纤维陶瓷电容器的设计

提出了一种新型多纤维陶瓷电容器(MFC)。MFC由众多纤维电容器并联而成，而每根纤维电容器由内电极(导电纤维)、介电层和外电极构成。理论分析表明，当纤维直径与介电层厚度相匹配时，MFC的电容比多层电容器(MLC)的电容大，而且MFC也具有更优异的抗击穿性能。     

Nanoscale ferroelectric information storage based on scanning nonlinear dielectric microscopy

An investigation of ultrahigh-density ferroelectric data storage based on scanning nonlinear dielectric microscopy (SNDM) is described. For the purpose of obtaining fundamental knowledge on high-density ferroelectric data storage, several experiments on nanodomain formation in a lithium tantalate (LiTaO3) single crystal were conducted. Through domain engineering, a domain dot array with an areal density of 1.5 Tbit/inch2 was formed on congruent LiTaO3 (CLT). Sub-nanosecond (500 psec) domain switching speed also has been achieved. Next, actual information storage is demonstrated at a density of 1 Tbit/inch2. Finally, it is described that application of a very small dc offset voltage is very effective in accelerating the domain switching speed and in stabilizing the reversed nano-domain dots. Applying this offset application technique, we formed a smallest artificial nano-domain single dot of 5.1 nm in diameter and artificial nano-domain dot-array with a memory density of 10.1 Tbit/inch2 and a bit spacing of 8.0 nm, representing the highest memory density for rewritable data storage reported to date.     

Nanoscale operation of a living cell using an atomic force microscope with a nanoneedle

We have developed a tool for performing surgical operations on living cells at nanoscale resolution using atomic force microscopy (AFM) and a modified AFM tip. The AFM tips are sharpened to ultrathin needles of 200-300 nm in diameter using focused ion beam etching. Force-distance curves obtained by AFM using the needles indicated that the needles penetrated the cell membrane following indentation to a depth of 1-2 microm. The force increase during the indentation process was found to be consistent with application of the Hertz model. A three-dimensional image generated by laser scanning confocal microscopy directly revealed that the needle penetrated both the cellular and nuclear membranes to reach the nucleus. This technique enables the extended application of AFM to analyses and surgery of living cells.     

MOS capacitor for simple thiol based biosensor applications

Thiols attached to thin gold films provide the platform for many biosensors to detect DNA. Attachment of thiol to gold can cause stress in gold especially if the layer is thin, inducing a change in the work function of gold. We report here a simple method to estimate this effect of attaching thiol to gold by monitoring the flat-band voltage of a metal-oxide-semiconductor (MOS) capacitor with gold as the metal. Capacitance-voltage (CV) characteristics were measured on gold gated MOS before and after attaching thiol to gold. A negative shift in the CV was seen for 1-octadecanethiol, while the shift was positive for 4-flurothipohenol. The MOS capacitor showed an increased change in the work function for increasing duration of immersion of the sample in the thiol solution saturating at longer times. Effect of attaching DNA molecules to the thiol on the CV characteristic was also investigated.     

Nanoscale two-bit/cell NAND silicon-oxide-nitride-oxide-silicon devices with a separated double-gate saddle-type structure

Nanoscale two-bit/cell NAND silicon-oxide-nitride-oxide-silicon flash memory devices based on a separated double-gate (SDG) saddle structure with a recess channel region had two different doping regions in silicon-fin channel to operate two-bit per cell. A simulation results showed that the short channel effect, the cross-talk problem between cells, and the increase in threshold voltage distribution were minimized, resulting in the enhancement of the scaling-down characteristics and the program/erase speed.     

A multi-level capacitor-less memory cell fabricated on a nano-scale strained silicon-on-insulator

A multi-level capacitor-less memory cell was fabricated with a fully depleted n-metal-oxide-semiconductor field-effect transistor on a nano-scale strained silicon channel on insulator (FD sSOI n-MOSFET). The 0.73% biaxial tensile strain in the silicon channel of the FD sSOI n-MOSFET enhanced the effective electron mobility to ～ 1.7 times that with an unstrained silicon channel. This thereby enables both front- and back-gate cell operations, demonstrating eight-level volatile memory-cell operation with a 1 ms retention time and 12 μA memory margin. This is a step toward achieving a terabit volatile memory cell.     

基于沉淀转化法制备的纳米NiO混合电容器研究

运用沉淀转化法制备Ni(OH)2超微粉末,并通过热处理得到纳米NiO.利用TG、XRD、TEM、N2吸附,循环伏安和恒流充放电测试对样品进行了分析和表征.结果表明,实验制备的NiO粒径为10nm左右,比表面积达到186.3m2/g,并具有合适的孔径分布,NiO赝电容器的工作电压为0.35V,在电流密度为60mA/g时,其比容达到243F/g.以NiO和中孔活性炭分别作为正极和负极材料组装成NiO-AC混合电容器,混合电容器的工作电压达到1.5V,其能量密度为NiO赝电容器的17.2倍,并具有更好的功率特性.     

A local optical probe for measuring motion and stress in a nanoelectromechanical system

Nanoelectromechanical systems can be operated as ultrasensitive mass sensors and ultrahigh-frequency resonators, and can also be used to explore fundamental physical phenomena such as nonlinear damping and quantum effects in macroscopic objects. Various dissipation mechanisms are known to limit the mechanical quality factors of nanoelectromechanical systems and to induce aging due to material degradation, so there is a need for methods that can probe the motion of these systems, and the stresses within them, at the nanoscale. Here, we report a non-invasive local optical probe for the quantitative measurement of motion and stress within a nanoelectromechanical system, based on Fizeau interferometry and Raman spectroscopy. The system consists of a multilayer graphene resonator that is clamped to a gold film on an oxidized silicon surface. The resonator and the surface both act as mirrors and therefore define an optical cavity. Fizeau interferometry provides a calibrated measurement of the motion of the resonator, while Raman spectroscopy can probe the strain within the system and allows a purely spectral detection of mechanical resonance at the nanoscale.