共查询到19条相似文献,搜索用时 203 毫秒
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简要介绍了晶圆键合技术在发光二极管(LED)应用中的研究背景,分别论述了常用的黏合剂键合技术、金属键合技术和直接键合技术在高亮度垂直LED制备中的研究现状,包括它们的材料组成和作用、工艺步骤和参数以及优缺点.其中,黏合剂键合是一种低温键合技术,且易于应用、成本低、引入应力小,但可靠性较差;金属键合技术能提供高热导、高电导的稳定键合界面,与后续工艺兼容性好,但键合温度高,引入应力大,易造成晶圆损伤;表面活化直接键合技术能实现室温键合,降低由于不同材料间热失配带来的负面影响,但键合良率有待提高. 相似文献
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对常规激光键合在Si-玻璃键合工艺中因高温而引起的负面效应进行了分析,从而设计出芯片表面活化预键合与激光键合工艺相结合的方法.该方法已用于微电子机械系统(MEMS)样片封装实验中.实验过程是:先用一种特殊的化学方法形成亲水表面,然后将Si和玻璃置于室温下进行预键合,最后取波长1064nm、光斑直径500μm、功率70W的Nd∶YAG激光器作局部激光加热.结果表明,该方法在不施加外力下能实现无损伤低温键合,同时拉伸实验也说明了样片键合强度达到2.6~3.0MPa,从而既保证了MEMS芯片的封装质量又降低了其封装成本. 相似文献
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硅片直接键合机理及快速热键合工艺 总被引:4,自引:0,他引:4
本文的理论与实验结果说明,硅片表面吸附的OH团是室温下硅片相互吸引的主要根源。采用SIMS和红外透射谱定量测量了OH吸附量。开发了表面活化技术。发现键合强度随温度而增大是键合面积增加所致。SiO_2/SiO_2键合之界面中各种物质的扩散及氧化层粘滞流动可以消除界面微观间隙。经表面活化的两硅片经室温贴合,150℃预键合,800℃,2小时退火后经1200℃,2分钟快速热键合可实现完善的键合且原有杂质分布改变很小,为减薄工艺提供了一个技术基础。 相似文献
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无压力辅助硅/玻璃激光局部键合 总被引:1,自引:0,他引:1
提出了一种新的无需外压力作用的硅/玻璃激光局部键合方法,通过对晶圆进行表面活化处理,选择合适的激光参数及加工环境,成功地实现了无压力辅助硅/玻璃激光键合.同时研究了该键合工艺参数如激光功率、激光扫描速度、底板材料等的影响.实验表明,激光功率越大,扫描速度越小,键合线的宽度就越大.实验结果显示,该方法能有效减少键合片的残余应力,控制键合线宽,并能得到较好的键合强度.该工艺可为MEMS器件的封装与制造提供简洁、快速、键合区可选择的新型键合方法. 相似文献
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Hashimoto T. Nakasuga Y. Yamada Y. Terui H. Yanagisawa M. Akahori Y. Tohmori Y. Kato K. Suzuki Y. 《Lightwave Technology, Journal of》1998,16(7):1249-1258
A two-step bonding technique for optical device assembly on a planar lightwave circuit platform was developed, which consists of a chip-by-chip thermo-compression prebonding step and a simultaneous reflow bonding step. The technique was used to realize multichip optical integration on the platform. The characteristics of the bonding technique were examined by investigating its strength and accuracy. The bonding accuracies in the horizontal and vertical directions were 1.1 and 0.8 μm, respectively, with high bonding strength. The technique was first applied to a 3 chip integrated transceiver module and the 136 fabricated modules exhibited good performance. The average coupling loss between the laser diodes and the waveguide was estimated to be 4.1 dB and stable characteristics were observed during 1200 cycle thermal shock tests between -40 and 85°C. Next, the two-step bonding technique was used for a 4 channel laser diode module on which 8 optical device chips were integrated and a low coupling loss was achieved of better than 4.2 dB which is as good as that of the 3 chip integrated optical modules 相似文献
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The interfacial chemistry of InP/GaAs direct bonding with either 5% HF in water or HF:ethanol (1:9) chemical pretreatments
was investigated. Multiple internal transmission-Fourier transform infrared spectroscopy (MIT-FTIR) and atomic force microscopy
(AFM) were used to probe the bonding interface. The bond strength was measured as a function of annealing conditions and prebonding
chemical treatment. The HF-based pretreatments remove the initial native oxide, leaving an interfacial layer of either water
or ethanol. The initial room-temperature bond strength is primarily determined by the strength of hydrogen bonding, which,
in turn, is a function of the prebonding treatment. The removal of interfacial water and ethanol, and with the subsequent
formation of the oxide layer, leads to an increased bond strength. For ethanol-based HF treatments, ethanol appears to react
with the underlying interfacial oxide layer through a complex interaction with the absorbed water. After annealing, the bond
strength for all prebonding preparations can reach a high value, comparable to the fracture strength of the InP. The oxide
composition after thermal annealing shifts from In2O3 to the eventual thermodynamic equilibrium product, InPO4. 相似文献
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The thermal effect of bonding wires in laser diodes is analyzed using the analytical temperature solution for a five-layer structure and an iteration technique. Finite element method is used to confirm the results. Due to the bonding wire, the longitudinal temperature profile of laser diodes exhibits significant reduction at the foot of the wire even with uniform longitudinal heat distribution. For lasers designed with uniform longitudinal current density, heat increases toward the laser facets because of nonradiative recombination of carriers through surface quantum states on the facets. This leads to local temperature concentration on and near the facets. The conduction of heat through the bonding wire at the top center of laser chips further enhances this temperature concentration. In use, the stripe electrode of laser diodes is at uniform voltage. Under this operation condition, the current density would increase in the higher temperature regions due to bandgap decrease, causing higher heat flux. And consequently even higher temperature. Accordingly, the location of bonding wire and the shape of stripe electrode require careful consideration in the design phase to achieve uniform longitudinal temperature profile 相似文献
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The bonding chemistry and the role of the additional HCl-based prebonding treatment when combined with ozone and oxygen plasma
treatments on the GaAs/GaAs direct bonding were investigated using multiple internal transmission Fourier transform infrared
spectroscopy (MIT-FTIR) and atomic force microscopy (AFM). The results showed that the additional HCl-based pretreatment led
to an increased bonding strength and a qualitative reduction in the void density. The removal of the initial native oxide
facilitates the diffusion of water to the GaAs wafer surface where it can react to form primarily Ga-based oxides, leading
to a substantially increased bond strength compared to those without the removal of interfacial native oxide. 相似文献
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本文采用Si/Si直接键合制备p~+/n~-、n~-/n~-结构的工艺原理及方法。通过实验,摸索出了一种有效的表面清洗-高温处理Si/Si键合工艺;采用该工艺制出了p~+/n~-、n~-/n~-样片;对键合的微观结构、键合强度、杂质分布及电接触特性进行了检测。 相似文献
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