表面处理对可加工陶瓷真空沿面闪络特性的影响

长期以来真空沿面闪络现象严重制约着电真空绝缘系统的整体性能,限制了高压电真空设备的发展,而绝缘材料的表面状况对其沿面耐电特性有极大影响。本文针对一种具有良好加工性能及表面耐电特性的低熔点可加工微晶玻璃陶瓷引入真空绝缘的背景,通过使用不同的砂纸对可加工陶瓷试品的表面进行打磨处理,使用超深度表面形态测定激光显微镜测定不同处理方式下试品表面形貌的变化,并对不同处理情况下的试品的真空沿面闪络特性进行测定。结果发现:使用砂纸打磨的方法能够有效改变试品的表面粗糙度,粗糙度变化规律明显,而随着试品表面粗糙度的增大,试品的真空沿面闪络电压提高。     

玻璃陶瓷表面浅陷阱分布对其真空沿面闪络特性的影响

长期以来沿面闪络现象一直制约着真空绝缘系统的整体性能,极大地限制了高压电真空设备的发展进程。针对一种具有良好加工性能及表面耐电特性的低熔点可加工微晶玻璃陶瓷引入真空绝缘的背景,研究了不同制备工艺的可加工陶瓷试品在进行表面氢氟酸处理前后其电学特性的变化。利用表面电位衰减法测量了材料表层陷阱分布,分析了表面酸处理对其陷阱分布的影响;采用光电结合的方法,测量了不同表面处理的材料在真空中的表面耐电情况,分析了材料表面陷阱的密度和能级对闪络特性的影响。发现玻璃陶瓷材料表面存在的玻璃相结构是造成存在大量浅陷阱的重要原因,而浅陷阱对沿面闪络特性造成不利影响。得知通过氢氟酸处理可以腐蚀掉材料表面的玻璃相结构,从而降低浅陷阱密度,进而明显提高材料表面闪络的稳定性和降低分散性。     

氢氟酸腐蚀对可加工陶瓷表面耐电的影响

为了解决真空中的沿面闪络现象制约真空绝缘系统的整体性能的问题,提出将一种具有优良的可加工性能及表面耐电性能的微晶玻璃(又称可加工陶瓷)引入真空绝缘领域,研究了氢氟酸的体积分数φ(HF)不同时处理可加工陶瓷样品前后其电学特性的变化。利用X射线衍射(XRD)技术,定性分析了φ(HF)不同时处理样品后表面的玻璃相的体积分数φ(GP);采用光电结合的方法,测量了φ(HF)不同时处理样品在真空高压脉冲下的沿面闪络特性。φ(HF)不同时处理可加工陶瓷后,其表面φ(GP)和真空表面耐电性能均改变;φ(HF)越高,则样品表面的φ(GP)越低,真空耐电特性越好。通过氢氟酸处理可以腐蚀掉样品表面的玻璃相,从而改变了脱陷电子的"爬电高度",进而影响了可加工陶瓷的真空表面耐电性能。     

表面离子交换对可加工陶瓷真空沿面耐电特性的影响

真空中沿固体绝缘材料表面的闪络电压通常远低于绝缘材料自身及相同长度真空间隙的击穿电压,长期以来这一现象极大地限制了高压电真空设备的发展进程。鉴于此,将一种具有优良的可加工性能及表面耐电特性的可加工陶瓷引入真空绝缘领域,进而通过离子交换的方式改变可加工陶瓷的表面元素分布,以降低其表面的二次电子发射系数。并采用Cu+置换可加工陶瓷表面的Na+,考察了经不同离子交换时间后试品的表面形貌、介电特性及沿面耐电特性。结果发现:Cu+离子交换Na+能够提高可加工陶瓷的沿面闪络电压,随离子交换时间延长试品的沿面闪络电压有提高的趋势,并且出现闪络电压最高点,当离子交换时间过长时,闪络电压会有所降低。这为通过表面改性无机材料提高其表面耐电强度提供了一种新的方法。     

纳秒脉冲下圆台形可加工陶瓷真空沿面耐电特性测试与仿真分析

真空中绝缘子表面的沿面闪络现象极大地限制了电真空设备的发展进程。为此,将一种具有优良可加工性能和良好耐电性能的可加工陶瓷引入真空绝缘领域,结合工程实际中经常采用圆台形绝缘结构,将其加工成不同角度的圆台形绝缘子,在ns脉冲电压下对试品进行了真空沿面耐电性能的测试,并分析了锥角对阴极三结合点处电场、表面电荷分布和初始电子运...     

新型可加工陶瓷真空中冲击闪络特性的研究

为了克服氧化铝陶瓷存在加工难度及脆性大等缺点,研制成功了一种新型低熔点可加工微晶玻璃陶瓷,它具有良好的力学、热学和可加工性能,但需进一步了解其电气性能。因此,测量了这种新型陶瓷的介电特性;考察了其在真空中脉冲电压下的沿面耐电特性;对比分析了氧化铝陶瓷和可加工陶瓷的表面耐电性能及不同添加剂成分与不同比例的添加剂对可加工陶瓷表面耐电性能的影响。结果发现,这种可加工陶瓷符合电工陶瓷的标准,其表面耐电性能优于氧化铝陶瓷,可替代现有的陶瓷材料,并获得了较好的配方设计。     

表面粗糙处理对可加工陶瓷冲击闪络特性研究

长期以来,复合绝缘系统的耐电性能受制于其绝缘材料表面的沿面闪络,尤以真空闪络最为严重,大大限制了电真空器件的整体性能。以一种具有良好耐电性能的低熔点可加工陶瓷引入真空绝缘,通过不同砂纸打磨研究不同表面粗糙度对其闪络性能的影响。结果发现,在冲击电压作用下,随着材料表面粗糙程度的增加其闪络电压有上升的趋势,打磨方向垂直于电极连线方向的效果要优于打磨方向平行于电极连线方向。     

多层均压结构可加工陶瓷真空沿面耐电特性的实验与仿真研究

真空中沿固体绝缘材料表面的闪络电压通常远低于绝缘材料自身及相同长度真空间隙的击穿电压,这一现象极大地限制了高压真空设备的发展。将一种具有优良可加工性能和良好耐电性能的可加工陶瓷引入真空绝缘领域,结合工程实际中的绝缘堆结构,加工制作了多层均压结构;在纳秒脉冲电压下对不同多层均压结构的样品进行了真空沿面耐电性能的测试,并分析了不同均压结构对样品沿面电场和电子运动轨迹的影响。结果表明：多层均压结构样品的耐压强度要高于圆柱形样品,且其闪络场强随着绝缘层与金属层比例的增大有增大的趋势,径向电场随该比例的增大而减小;使用圆台形绝缘子组成多层均压绝缘结构时,电子难以与样品表面发生碰撞,闪络的稳定性得到了一定程度的提高。     

表面粗糙度对绝缘材料真空闪络特性的影响

在高电场作用下,在真空、气体或液体介质中常常会发生沿固体绝缘表面的破坏性放电现象,即表面闪络,而发生闪络的电压往往远低于固体和氛围介质本身的击穿电压,其中尤以真空中的闪络现象最为严重.本文针对真空条件下PTFE和可加工陶瓷在冲击电压下的沿面闪络现象进行了观测和研究.发现改变绝缘材料粗糙度对其闪络特性有明显的影响,并对这些现象进行合理解释.     

基于二元布气的大气压等离子体沉积TiO2功能层提高陶瓷表面绝缘性能

真空/固体介质界面的绝缘性能相对较低,真空沿面闪络现象时有发生,严重威胁高压电气设备、脉冲功率系统的安全可靠运行。为提高陶瓷材料在真空中的表面绝缘性能,该文采用大气压等离子体沉积技术,以钛酸四乙酯与乙醇的混合溶液为前驱物,利用二元布气的反应器在陶瓷表面沉积二氧化钛（TiO₂）薄膜。通过调控沉积条件,得到均匀致密的TiO₂功能层,并对沉积改性前后材料表面的理化特性、表面电荷特性、电荷陷阱分布以及在真空中的沿面闪络特性进行测量和表征。实验结果表明：当基底温度为25℃时,大气压等离子体沉积处理在陶瓷表面引入TiO₂功能层后,样品表面陷阱能级最低,电荷消散速度最快,与未处理样品相比,闪络电压提高39%;当基底温度升高至80℃时,TiO₂功能层致密均匀,样品表面陷阱能级最高,电荷陷阱逐渐变为深陷阱,闪络电压提高58%。通过大气压等离子体改性技术在绝缘材料表面沉积TiO₂功能层,能够有效提高陶瓷的表面绝缘性能,为后续工程应用提供新的改性途径。     

Secondary electron emission from alumina RF windows

The development of alumina RF windows for use at the output section of high-power RF sources is an important issue for accelerators. The breakdown of RF windows is caused by 1. the multipactor effect (electron multiplication on the surface) and/or 2. the discharge of accumulated charges (due to the multipactor effect). Measurements of secondary electron emission (SEE) and surface charging were carried out to determine the durability of various alumina ceramics in this application. Since excessive surface heating takes place during surface discharge, SEE yields at high temperature were also measured. The results indicate that SEE yields become lower at high temperature, and that higher purity alumina ceramics show higher SEE yields. High-power tests using a resonant ring were conducted in order to observe surface charging and electron accumulation. Higher purity alumina ceramics showed superior performance in the high-power tests, probably due to lower surface charging.     

Effect of mechanical finishes on secondary electron emission of alumina ceramics

The effect of surface roughness of insulator on the secondary electron emission (SEE) coefficients was investigated with changing the incident angle of primary electrons. The SEE coefficients were measured using a scanning electron microscope with a single-pulse electron beam (100 pA, 1 ms). As a result, the SEE coefficients increased with the incident angle for smooth surface, while those of rough surface almost did not change with the incident angle. The SEE coefficients of commercial alumina ceramics with three different surface finishes, i.e. as-sintered, as-ground and mirror-finished samples, were also measured before and after annealing treatments. This treatment was carried out in air at 1400 degC for 1 h. After annealing, the SEE coefficients were higher than those of unannealed samples. This increase is proposed to be due to the defect recoveries as well as neutralizations of charging, which significantly influence the SEE. For relative low purity (95% or less), the SEE coefficients of annealed alumina became lower after mechanical grinding operations and lower again after mirror-finished operations. The SEE coefficients of 99.7% purity alumina were almost unaffected by the mechanical finishes.     

Secondary electron emission and surface charging evaluation of alumina ceramics and sapphire

The breakdown of alumina rf windows is mostly caused by multipactor, as well as by material defects and contamination. Since multipator induces localized surface heating, leading to surface melting, it is necessary to observe secondary electron emission (SEE) coefficients of alumina ceramics under high temperature conditions. The SEE coefficients of commercial alumina ceramics and sapphire were measured by a scanning electron microscopy (SEM) with a single short-pulsed electron beam (100 pA, 1 ms) at room temperature and at 650degC. Additive materials used for sintering alumina, such as SiO ₂ and MgO, were also investigated. Surface charging evaluations have also become important because the accumulated charges are discharged at the threshold Held, resulting in surface discharge. The surface charging evaluations were carried out by multi-pulse measurements with the injection of successive pulses on the sample. As a result, reductions in the SEE coefficients with temperature were confirmed, except for sapphire. The multi-pulse measurement results indicated that surface charging of the sapphire was higher than that of other samples. This may be one of the factors that causes sapphire not to be durable for rf window applications, compared with alumina ceramics. Although there are few exceptions, it was found that the SEE coefficients of alumina ceramics increased with the purity and the average grain size     

Enhancement in the physical properties of K0.5Na0.5NbO3 ceramics by the addition of 0.5 Li2O – 0.5K2O – 2B2O3 glass

The addition of powdered 0.5 Li₂O–0.5K₂O–2B₂O₃ (LKBO) glass (0.5 to 2 wt%) to potassium sodium niobate, K_0.5Na_0.5NbO₃ (KNN) powder facilitated higher densification which resulted in improved physical properties that include dielectric, piezoelectric and ferroelectric. The required polycrystalline powders of KNN were synthesized through solid-state reaction route, while LKBO glass was obtained via the conventional melt-quenching technique. Pulverized glass was added to KNN powders in different wt% and compacted at room temperature and these were sintered around 1100°C. Indeed the addition of optimum amount (1 wt %) of LKBO glass to KNN ceramics facilitated lowering of sintering temperature accompanied by larger grains (8 µm) with improved density. The dielectric constant (?_r) measured at room temperature was 475 (at 10 kHz), whereas it was only 199 for the LKBO glass free KNN. The piezoelectric coefficient (d₃₃) was found to be 130 pC/N for 1 wt% LKBO added glass, which was much higher than that of pure KNN ceramics (85 pC/N). Indeed, the LKBO glass added samples did exhibit well saturated P versus E hysteresis loops at room temperature. Though there was no particular trend observed in the variation of P_r with the increase in glass content, the P_r values were higher than that obtained for KNN ceramics. The improved physical properties of KNN ceramics encountered in these studies were primarily attributed to enhancement in density and grain size.     

真空灭弧室瓷壳黄斑的形成机制及消除措施

对黄斑瓷壳和正常瓷壳进行了电性能测试、化学及烧氢烘烤等一系列试验,证明了高压老炼后真空灭弧室瓷壳黄斑的形成是由于氧化铝晶格配位结构的变化引起的,它不影响真空灭弧室的电气性能,而且加热至650℃后即可消除。     

陷阱分布对Al2O3陶瓷介质在真空中沿面闪络特性的影响

真空中绝缘介质的沿面闪络一直是制约真空中电绝缘强度的重要因素，文中采用等温衰减电流法（IDC）研究了在不同烧结温度和掺有不同添加剂情况下氧化铝陶瓷试样的陷阱分布，利用试验装置测量了陶瓷试样的沿面闪络特性，试验结果表明，烧结温度和添加剂显著影响了氧化铝陶瓷的陷阱分布；不同的陷阱分布影响着绝缘介质的沿面闪络特性，根据试验结果，笔者从固体能带理论出发，将陷阱分布和氧化铝陶瓷的沿面闪络特性联系在一起，解释了一些沿面闪络发展过程中的疑难问题。     

Influence of Cr/sub 2/O/sub 3/ and MnO additives on the surface properties of alumina insulators

Alumina insulators containing 95wt% Al/sub 2/O/sub 3/ were doped with Cr/sub 2/O/sub 3/ and MnO(MnCO/sub 3/). The properties of the doped samples were measured and compared with those of the original alumina insulators. Better surface performances of the samples doped with proper Cr/sub 2/O/sub 3/ and MnO were obtained while the bulk properties have hardly been changed. After doping the sample showed a lower SEE (secondary electron emission) coefficient, a lower surface resistivity and a higher surface flashover voltage in vacuum. Meanwhile, some points regarding the effects of manganese and chromium doping on the properties of alumina insulators were also briefly discussed.