Capacitive micromachined ultrasonic transducers: fabrication technology

Capacitive micromachined ultrasonic transducer (cMUT) technology is a prime candidate for next generation imaging systems. Medical and underwater imaging and the nondestructive evaluation (NDE) societies have expressed growing interest in cMUTs over the years. Capacitive micromachined ultrasonic transducer technology is expected to make a strong impact on imaging technologies, especially volumetric imaging, and to appear in commercial products in the near future. This paper focuses on fabrication technologies for cMUTs and reviews and compares variations in the production processes. We have developed two main approaches to the fabrication of cMUTs: the sacrificial release process and the recently introduced wafer-bonding method. This paper gives a thorough review of the sacrificial release processes, and it describes the new wafer-bonding method in detail. Process variations are compared qualitatively and quantitatively whenever possible. Through these comparisons, it was concluded that wafer-bonded cMUT technology was superior in terms of process control, yield, and uniformity. Because the number of steps and consequent process time were reduced (from six-mask process to four-mask process), turn-around time was improved significantly.     

Capacitive micromachined ultrasonic transducer design for high power transmission

Capacitive micromachined ultrasonic transducers (cMUTs) were developed to meet the demands of the ultrasonic industry. To achieve maximum efficiency, the conventional operation of the cMUT requires a bias voltage close to the collapse voltage. Total acoustic output pressure is limited by the efficiency of the cMUT and the maximum-allowed pulse voltage on the membrane. In this paper, we propose the collapse-snapback operation of the cMUT: the membrane is collapsed onto the substrate in the collapsing cycle, and released in the snapback cycle. The collapse-snapback operation overcomes the above-mentioned limitations of the conventional operation. The collapse-snapback operation utilizes a larger range of membrane deflection profiles (both collapsed and released profiles) and generates higher acoustic output pressures. The static finite element calculations were performed to design cMUTs with specific collapse and snapback voltages by changing the electrode parameters (radius (re), position (de), and thickness (te)). These designs were refined for optimum average displacement per cycle. An electrode radius greater than 60% of the membrane radius significantly improved the displacement per volt. Moderately thick membranes (te approximately 0.2 microm) were preferred, as thicker membranes reduced the displacement per volt. Under proper bias conditions, the collapse-snapback operation, designed for high-power transmission, allowed the application of pulse voltages larger than the difference of collapse and snapback voltages. Dynamic finite element calculations of an infinite cMUT array on the substrate loaded with acoustic fluid medium were performed to determine the dynamic response of the cMUT. Commercially available FEM packages ANSYS and LS-DYNA were used for static and dynamic calculations, respectively. The cMUTs were fabricated for optimal performance in the collapse-snapback operation. The transmit experiments were performed on a 2-D cMUT array using a calibrated hydrophone. Taking into account the attenuation and diffraction losses, the pressure on the cMUT surface was extracted. The cMUT generated 0.47 MPa (6 kPa/V) and 1.04 MPa (11 kPa/V) in the conventional and collapse-snapback operations, respectively. Therefore, collapse-snapback operation of the cMUTs was superior for high-power transmission.     

Suspended aluminum nitride structures grown via metal organic vapor phase epitaxy

The development of III-Nitride suspended structures for Micro-Electro Mechanical Systems (MEMS) and Nano-Electro Mechanical Systems (NEMS) is challenging due to lack of selective etching techniques. Recent efforts have focused on the removal of sacrificial layers based on material properties, such as crystalline quality, bandgap, polarity, doping, etc. These techniques require several processing steps in addition to precise control over the sacrificial and functional layer properties. In this work, conditions have been identified for the growth of etch-resistant polycrystalline AlN films via Metal Organic Vapor Phase Epitaxy (MOVPE) on silicon oxide surfaces, thus allowing silicon oxide to be used as a sacrificial layer in a surface micro-machining process. The MOVPE growth conditions reported result in a well oriented crystal with superior mechanical strength demonstrated by the fabrication of unsupported AlN structures with widths from 5 μm to 110 μm and air gaps ranging from 200 nm to 800 nm. This technique simplifies the fabrication process of AlN suspended structures and is well suited for achieving group III-Nitride heteroepitaxial MEMS/NEMS systems.     

A new regime for operating capacitive micromachined ultrasonic transducers

We report on a new operation regime for capacitive micromachined ultrasonic transducers (cMUTs). Traditionally, cMUTs are operated at a bias voltage lower than the collapse voltage of their membranes. In the new proposed operation regime, first the cMUT is biased past the collapse voltage. Second, the bias voltage applied to the collapsed membrane is reduced without releasing the membrane. Third, the cMUT is excited with an ac signal at the bias point, keeping the total applied voltage between the collapse and snapback voltages. In this operation regime, the center of the membrane is always in contact with the substrate. Our finite element methods (FEM) calculations reveal that a cMUT operating in this new regime, between collapse and snapback voltages, possesses a coupling efficiency (k/sub T//sup 2/) higher than a cMUT operating in the conventional regime below its collapse voltage. This paper compares the simulation results of the coupling efficiencies of cMUTs operating in conventional and new operation regimes.     

Parametric linear modeling of circular cMUT membranes in vacuum

We present a lumped element parametric model for the clamped circular membrane of a capacitive micromachined ultrasonic transducer (cMUT). The model incorporates an electrical port and two sets of acoustic ports, through which the cMUT couples to the medium. The modeling approach is based on matching a lumped element model and the mechanical impedance of the cMUT membrane at the resonance frequencies in vacuum. Very good agreement between finite element simulation results and model impedance is obtained. Equivalent circuit model parameters can be found from material properties and membrane dimensions without a need for finite element simulation.     

Controlled electroplating and electromigration in nickel electrodes for nanogap formation

We report the fabrication of nickel nanospaced electrodes by electroplating and electromigration for nanoelectronic devices. Using a conventional electrochemical cell, nanogaps can be obtained by controlling the plating time alone and after a careful optimization of electrodeposition parameters such as electrolyte bath, applied potential, cleaning, etc. During the process, the gap width decreases exponentially with time until the electrode gaps are completely bridged. Once the bridge is formed, the ex situ electromigration technique can reopen the nanogap. When the gap is ～ 1 nm, tunneling current-voltage characterization shows asymmetry which can be corrected by an external magnetic field. This suggests that charge transfer in the nickel electrodes depends on the orientation of magnetic moments.     

Fabrication of porous Pt-Pd electrodes using solid state interdiffusion

Partial burnt off process of sacrificial material while fabricating porous electrode for gas sensors and fuel cells brings uncertainties about reaction of gas species with remained sacrificial material. Here, efforts were devoted to fabricate a porous electrode with high electrical conductivity without using sacrificial carbon material. To do so, bilayers of Pt/Pd were deposited over Yttria Stabilized Zirconia substrate and thermally treated at 500 °C for different annealing times. As a result of annealing, solid state interdiffusion between Pt and Pd was activated resulting to generation of Pd accompanied with pores on the surface of Pt layer. Moreover, 10 min annealing leads to higher electrical conductivity of intermixed layer which is most probably due to a reduction in grain boundary resistivity of the host material. It has been shown that 10 min annealed bilayers of Pt/Pd exhibit promising characteristics in terms of porosity and electrical conductivity. It was concluded that solid state interdiffusion was introduced as an effective method to fabricate porous conductive layers which has potential applications in gas sensors and fuel cells.     

Nanowire lithography: fabricating controllable electrode gaps using Au-Ag-Au nanowires

A method to fabricate nanowire electrodes possessing controllable gaps is described. The method relies on electrochemical deposition and selective chemical etching or heating to selectively remove the Ag segment of Au-Ag-Au nanowires. Because the thickness of the Ag segment directly dictates the size of the nanogap, the gap width can be easily controlled during the nanowire fabrication process. Herein, we demonstrate gaps with 2 microm, 100 nm and 20 nm widths via the above-mentioned approaches. In addition, we observed that small gaps (approximately 20 nm) can be formed through annealing Au-Ag-Au nanowires at 200 degrees C in air. Electrical contact between nanowire electrodes and contact pads is studied. Using nanowire electrodes with a 100 nm gap, we subsequently fabricate organic field effect transistors (FETs) with regioregular poly(3-hexylthiophene).     

Vertically aligned carbon-nanotube arrays showing Schottky behavior at room temperature

Vertically aligned carbon-nanotube (CNT) arrays were fabricated in the thin-film anodic aluminum oxide (AAO) templates on silicon wafers utilizing a niobium (Nb) thin film as the source electrode. The average diameter of the CNTs was 25 nm, and the number density was 3 x 10(10) cm(-2). The CNT arrays synthesized at 700 degrees C and above exhibited Schottky behavior even at 300 K, with energy gaps between 0.2 eV and 0.3 eV. However, individual CNTs obtained by removal of the template behaved as resistors at 300 K. The CNT/Nb oxide/Nb junction is thought to be responsible for the Schottky behavior. This structure can be a useful cornerstone in the fabrication of nanotransistors operating at room temperature.     

Optimization of the gain-bandwidth product of capacitive micromachined ultrasonic transducers

Capacitive micromachined ultrasonic transducers (cMUT) have large bandwidths, but they typically have low conversion efficiencies. This paper defines a performance measure in the form of a gain-bandwidth product and investigates the conditions in which this performance measure is maximized. A Mason model corrected with finite-element simulations is used for the purpose of optimizing parameters. There are different performance measures for transducers operating in transmit, receive, or pulse-echo modes. Basic parameters of the transducer are optimized for those operating modes. Optimized values for a cMUT with silicon nitride membrane and immersed in water are given. The effect of including an electrical matching network is considered. In particular, the effect of a shunt inductor in the gain-bandwidth product is investigated. Design tools are introduced, which are used to determine optimal dimensions of cMUTs with the specified frequency or gain response.     

Development of RF-MEMS switch on PCB substrates with polyimide planarization

This paper describes an improved manufacturing technology for the fabrication of radio frequency (RF) microelectromechanical systems switches on a laminated printed circuit board (PCB). The process simplifies the fabrication process without sacrificing the RF performance of switches on the PCB. The proposed process patterns a 17.5-/spl mu/m-thick copper layer on the PCB; as a result, the surface becomes highly nonplanarized. Polyimide is then used to planarize the PCB's patterned copper layer. The use of polyimide for planarization has not only made the fabrication process simpler, but it has also reduced the formation of voids in the photoresist sacrificial layer where metallic membrane is deposited and patterned. The switches fabricated with this technology demonstrate a low insertion loss (less than 0.06 dB at 10 GHz) and good isolation (less than 20 dB at 10 GHz).     

Atomic layer deposition on phase-shift lithography generated photoresist patterns for 1D nanochannel fabrication

A versatile, low-cost, and flexible approach is presented for the fabrication of millimeter-long, sub-100 nm wide 1D nanochannels with tunable wall properties (wall thickness and material) over wafer-scale areas on glass, alumina, and silicon surfaces. This approach includes three fabrication steps. First, sub-100 nm photoresist line patterns were generated by near-field contact phase-shift lithography (NFC-PSL) using an inexpensive homemade borosilicate mask (NFC-PSM). Second, various metal oxides were directly coated on the resist patterns with low-temperature atomic layer deposition (ALD). Finally, the remaining photoresist was removed via an acetone dip, and then planar nanochannel arrays were formed on the substrate. In contrast to all the previous fabrication routes, the sub-100 nm photoresist line patterns produced by NFC-PSL are directly employed as a sacrificial layer for the creation of nanochannels. Because both the NFC-PSL and the ALD deposition are highly reproducible processes, the strategy proposed here can be regarded as a general route for nanochannel fabrication in a simplified and reliable manner. In addition, the fabricated nanochannels were used as templates to synthesize various organic and inorganic 1D nanostructures on the substrate surface.     

Simulation and experimental characterization of a 2-D capacitive micromachined ultrasonic transducer array element

In this letter, a 400-mumx400-mum 2-D capacitive micromachined ultrasonic transducer (cMUT) array element is experimentally characterised, and the results are found to be in good agreement with theoretical predictions. As a receiver, the transducer has a 1.8x10(-7) nm/ radical(Hz) displacement sensitivity, and, as a transmitter, it produces 16.4 kPa/V of output pressure at the transducer surface at 3 MHz. The transducer also has more than 100% fractional bandwidth around 3 MHz, which makes it suitable for ultrasound imaging.     

Design, fabrication and characterization of a capacitive micromachined ultrasonic probe for medical imaging

In this paper we report the design, fabrication process, and characterization of a 64-elements capacitive micromachined ultrasonic transducer (cMUT), 3 MHz center frequency, 100% fractional bandwidth. Using this transducer, we developed a linear probe for application in medical echographic imaging. The probe was fully characterized and tested with a commercial echographic scanner to obtain first images from phantoms and in vivo human body. The results, which quickly follow similar results obtained by other researchers, clearly show the great potentiality of this new emerging technology. The cMUT probe works better than the standard piezoelectric probe as far as the axial resolution is concerned, but it suffers from low sensitivity. At present this can be a limit, especially for in depth operation. But we are strongly confident that significant improvements can be obtained in the very near future to overcome this limitation, with a better transducer design, the use of an acoustic lens, and using well matched, front-end electronics between the transducer and the echographic system.     

接触式串联射频MEMS开关的工艺研究

本文采用MEMS工艺制作接触式串联射频开关,射频开关采用双端固定的悬臂梁结构,悬梁为PECVD制作的SiN薄膜,溅射Au制作共平面波导,聚酰亚胺作为牺牲层,运用等离子体刻蚀法释放牺牲层.研究了悬梁、共平面波导以及电极的制作工艺,并分析了牺牲层的制作和刻蚀工艺对开关结构的影响.     

Suspended carbon nanotube nanocomposite beams with a high mechanical strength via layer-by-layer nano-self-assembly

The fabrication and characterization of single-walled carbon nanotube (SWCNT) composite thin film micropatterns and suspended beams prepared by lithography-compatible layer-by-layer (LbL) nano-self-assembly are demonstrated. Negatively charged SWCNTs are assembled with a positively charged polydiallyldimethylammonium chloride, and the composite thin film is patterned by oxygen plasma etching with a masking layer of photoresist, resulting in a feature size of 2 μm. Furthermore, the SWCNT nanocomposite stripe pattern with a metal clamp on both ends is released by etching a sacrificial layer of silicon dioxide in the hydrofluoric acid vapor. I-V measurement reveals that the resistance of SWCNT nanocomposite film decreases by 23% upon release, presumably due to the effect of reorientation of CNTs caused by the deflection of about 50 nm. A high Young's modulus is found in a range of 500-800 GPa based on the characterization of a fixed-fixed beam using nanoindentation. This value is much higher than those of the other CNT-polymer composites reported due to organization of structures by self-assembly and higher loading of CNTs. The stiff CNT-polymer composite thin film micropattern and suspended beam have potential applications to novel physical sensors, nanoelectromechanical switches, other M/NEMS devices, etc.     

Gallium nitride based logpile photonic crystals

We demonstrate a nine-layer logpile three-dimensional photonic crystal (3DPC) composed of single crystalline gallium nitride (GaN) nanorods, ～100 nm in size with lattice constants of 260, 280, and 300 nm with photonic band gap in the visible region. This unique GaN structure is created through a combined approach of a layer-by-layer template fabrication technique and selective metal organic chemical vapor deposition (MOCVD). These GaN 3DPC exhibit a stacking direction band gap characterized by strong optical reflectance between 380 and 500 nm. By introducing a "line-defect" cavity in the fifth (middle) layer of the 3DPC, a localized transmission mode with a quality factor of 25-30 is also observed within the photonic band gap. The realization of a group III nitride 3DPC with uniform features and a band gap at wavelengths in the visible region is an important step toward realizing complete control of the electromagnetic environment for group III nitride based optoelectronic devices.     

Photoconductive optically driven deformable membrane under high-frequency bias: fabrication, characterization, and modeling

The fabrication and characterization of an optically addressable deformable mirror for a spatial light modulator are described. Device operation utilizes an electrostatically driven pixelated aluminized polymeric membrane mirror supported above an optically controlled photoconductive GaAs substrate. A 5 mum thick grid of patterned photoresist supports the 2 mum thick aluminized Mylar membrane. A conductive ZnO layer is placed on the backside of the GaAs wafer. Similar devices were also fabricated with InP. A standard Michelson interferometer is used to measure mirror deformation data as a function of illumination, applied voltage, and frequency. The device operates as an impedance distribution between two cascaded impedances of deformable membrane substrate, substrate, and electrode. An analysis of device's operation under several bias conditions, which relates membrane deformation to operating parameters, is presented.     

A novel fabrication method for titania resistive switching device

The titania showing reversible resistive switching are attractive for today's semiconductor technology in nonvolatile random-access memories. A novel fabrication method for titania resistive switching device with vertical structure is proposed. First, the Pt electrode was fabricated the bottom using conventional photolithography and chemical etching technique. Next, the titania thin films with the thickness about 50 nm was deposited on the bottom electrode by electron beam evaporation (EBE). Then, the trench of photoresist for electrode deposit was etched with mild chemical process to preserve the original structure of titania layer. After that, the platinum was deposited in the trench of photoresist using ion sputter. A final lift-off process to define the Pt top electrodes was performed with acetone in an ultrasonic bath to remove the resist. The resistive bistability was observed in this device. The on-threshold voltage is +1.5 V and the off-threshold voltage is -0.6 V. The resistance ratio between the two stable states of the device including Al electrode is approximately 1 x 10(3), the state is nonvolatile and the retention-time test performed over an hour in sweeping mode measurement. The results indicate the forming and rupture of conductive channel relate to the defects and distributing of oxygen vacancy. This method is low-cost, high-yielding, and easy to implement, which is applicable to the fabrication of nonvolatile memories.     

Finite element analysis of underwater capacitor micromachined ultrasonic transducers

A simple electromechanical equivalent circuit model is used to predict the behavior of capacitive micromachined ultrasonic transducers (cMUT). The equivalent circuit model of the cMUT lacks important features such as coupling to the substrate and the ability to predict crosstalk between elements of an array of transducers. To overcome these deficiencies, a finite element model of the cMUT is constructed using the commercial code ANSYS(R). Calculation results of the complex load impedance seen by single capacitor cells are presented, then followed by a calculation of the plane wave real load impedance seen by a parallel combination of many cells that are used to make a transducer. Crosstalk between 1-D array elements is found to be due to two main sources: coupling through a Stoneley wave propagating at the transducer-water interface and coupling through Lamb waves propagating in the substrate. To reduce the crosstalk level, the effect of structural variations of the substrate are investigated, which includes a change of its thickness and etched trenches or polymer walls between array elements