Study of the structural and dielectric properties of Bi<Subscript>2</Subscript>O<Subscript>3</Subscript> and PbO addition on BiNbO<Subscript>4</Subscript> ceramic matrix for RF applications

In this paper, the structural and dielectric properties of BNO (BiNbO₄) was investigated as a function of the external RF frequency and temperature. The BNO Ceramics, prepared by the conventional mixed oxide method and doped with 3, 5 and 10 wt. % Bi₂O₃–PbO were sintered at 1,025 °C for 3 h. The X-ray diffraction patterns of the samples sintered, shown the presence of the triclinic phase (β-BNO). In the measurements obtained at room temperature (25 °C) was observed that the largest values of dielectric permittivity (ε′ _r ) at frequency 100 kHz, were for the samples: BNO5Bi (5 wt. % Bi₂O₃) and BNO5Pb (5 wt. % PbO) with values ε′ _r ~ 59.54 and ε′ _r ~ 78.44, respectively. The smaller values of loss tangent (tan δ) were for the samples: BNO5Bi and BNO3Pb (3 wt. % PbO) with values tan δ ~ 5.71 × 10⁻⁴ and tan δ ~ 2.19 × 10⁻⁴, respectively at frequency 33.69 MHz. The analysis as a function of temperature of the dielectric properties of the samples, obtained at frequency 100 kHz, showed that the larger value of the relative dielectric permittivity was about ε′ _r ~ 76.4 at temperature 200 °C for BNO5Pb sample, and the value smaller observed of dielectric loss was for BNO3Bi sample at temperature 80 °C, with about tan δ ~ 5.4 × 10⁻³. The Temperature Coefficient of Capacitance (TCC) values at 1 MHz frequency, present a change of the signal from BNO (−55.06 ppm/°C) to the sample doped of Bi: BNO3Bi (+86.74 ppm/°C) and to the sample doped of Pb: BNO3Pb (+208.87 ppm/°C). One can conclude that starting from the BNO one can increase the doping level of Bi or Pb and find a concentration where one have TCC = 0 ppm/°C, which is important for temperature stable materials applications like high frequency capacitors. The activation energy (H) obtained in the process is approximately 0.55 eV for BNO sample and increase with the doping level. These samples will be studied seeking the development ceramic capacitors for applications in radio frequency devices.     

Synthesis,structure and characterization of ceramic Ca4Bi2Ti4Nb6O30

The polycrystalline samples of Ca₄Bi₂Ti₄Nb₆O₃₀ (herein designated CBTN) were synthesized by the conventional ceramic method. Preliminary X-ray structural study of the compound showed the formation of a single phase solid solution having orthorhombic structure in the paraelectric phase. Measurements of the dielectric constant (ε) and dielectric loss (tan δ) as a function of temperature (−180–200°C) at 1 kHz and 10 kHz and also as a function of frequency (10² Hz to 10⁴ Hz) at five different temperatures [−180°C, −40°C, − 10°C 26°C (room temperature) and 75°C] have shown a dielectric anomaly and a phase transition at − 13 ±1°C in CBTN.     

Evaluation of a.c. conductivity behaviour of graphite filled polysulphide modified epoxy composites

Composites of epoxy resin having different amounts of graphite particles have been prepared by solution casting method. Temperature dependence of dielectric constant, tan δ and a.c. conductivity was measured in the frequency range, 1–20 kHz, temperature range, 40–180°C for 0.99, 1.96 and 2.91 wt% graphite filled and unfilled epoxy composites. It was observed that the dielectric constant, tanδ and a.c. conductivity increase with increasing temperature. Near the transition temperature the materials show anomalous behaviour for the observed properties. Peaks of dielectric constant, tan δ and a.c. conductivity were observed to shift towards lower temperature with increasing frequency. Clear relaxation (tan δ) peaks around 169°C were observed in epoxy resin, which shifted to lower temperature side on increasing the frequency. Addition of 2.91 wt% graphite shifted the tan δ peaks towards higher temperature side by creating hindrances to the rotation of polymer dipoles. Addition of 2–91 wt% graphite leads to an increased relaxation time τ of dipoles in polysulphide epoxy from 1.44 × 10⁻⁵− 3.92 × 10⁻⁵ (s) at 90°C by creating the hindrance to the rotation of dipoles.     

Characterization and dielectric properties of almandine-pyrope garnet

Some garnets collected from the Kothagudem area of Khammam district in Andhra Pradesh were characterized by chemical analysis. The results show the garnets to be of almandine (Fe⁺² ₃ Al₂Si₃O₁₂) pyrope (Mg₃Al₂Si₃O₁₂) group. Dielectric constant (ɛ) and dielectric loss (tanδ) were measured as a function of frequency and temperature in the frequency range of 100 Hz to 100 KHz and from room temperature to 400°C. The room temperature measurement was extended to 10 MHz, AC conductivity was calculated from the data on ε and tan δ. DC conductivity was also measured.     

Dielectric properties of NaF-B2O3 glasses doped with certain transition metal ions

Dielectric constant ε, loss tan δ, a.c. conductivity Σ and dielectric breakdown strength of NaF-B₂O₃ glasses doped with certain transition metal ions (viz. Cu²⁺, VO²⁺, Ti⁴⁺ and Mn⁴⁺) are studied in the frequency range 10²-10⁷ Hz and in the temperature range 30–250°C. The values of ε, tan δ, Σ_a.c. are found to be the highest for Cu²⁺ doped glasses and the lowest for Mn⁴⁺ doped glasses. Activation energy for a.c. conduction and the value of dielectric breakdown strength are found to be the lowest for Cu²⁺ doped glasses and the highest for Mn⁴⁺ doped glasses. With the help of infrared spectra, increase in the values of ε and tan δ of these glasses with frequency and temperature are identified with space charge polarization. An attempt has been made to explain a.c. conduction phenomenon on the basis of quantum mechanical tunneling model (QMT)/carrier barrier hopping model.     

Dielectric properties of Fe(OH)3 thin films formed at solution-gas interface

Dielectric properties of solution-gas interface-formed Fe(OH)₃ thin-film capacitors (Al/Fe(OH)₃/Al) of various thicknesses have been studied in the frequency range 10–10⁶ Hz at various temperatures (300–443 K). Dielectric constant, ε, increases with increasing film thickness (d) and temperature (T) and decreases with increase of frequency (f). The loss factor (tan δ), showing pronounced minimum with frequency, increases with rise of temperature, and tan δ_min shifts to a higher frequency. The large increase in dielectric constant towards low frequency region indicates the possibility of an interfacial polarization mechanism in this region.     

Dielectric properties of SrTiO3 single crystals subjected to high electric fields and later irradiated with X-rays orγ-rays

The dielectric constant (K), loss (tanδ), and hence conductivity (σ) of SrTiO₃ single crystals have been measured in the frequency region 10²–10⁷ Hz and in the temperature range 30°–350° C. Quenching, subjecting the crystals to high electric fields (a.c. or d.c.) and X-ray orγ-ray irradiation, or a combination of these treatments, is found to bring about interesting changes in these properties. An attempt is made to understand the results.     

Ferroelectric phase transition in Ba5RTi3Nb7O30 [R=Nd, Eu, Gd] ceramics

Polycrystalline samples of Ba₅RTi₃Nb₇O₃₀ [R=Nd, Eu, Gd], were prepared using high-temperature solid-state reaction technique. Preliminary X-ray structural analysis of the compounds shows the formation of single phase compounds (orthorhombic crystal system) at room temperature. Detailed studies of dielectric properties (ɛ, tanδ,σ) as a function of frequency (400 Hz to 10 kHz) and temperature (30° to 380°C) show that these compounds exhibit diffuse ferroelectric phase transition.     

Influence of BaZrO3, MnCO3 additives on dielectric properties and microstructure of Ba(Zn1/3Nb2/3)O3 ceramics and Ba(Zn1/3Nb2/3)O3-Sr(Zn1/3Nb2/3)O3 solid solutions

The effect of BaZrO₃, MnCO₃ additives on the dielectric properties, sintering temperature and microstructure of Ba(Zn_1/3Nb_2/3)O₃ (BZN) and Ba(Zn_1/3Nb_2/3)O₃-Sr(Zn_1/3Nb_2/3)O₃ (BSZN) ceramics was studied in this paper. It indicates that both BaZrO₃ and MnCO₃ can lower the sintering temperature of the ceramics and accelerate the crystallization of BZN and BSZN. The dielectric constant ɛ _r increases after MnCO₃ added, but decreases when BaZrO₃ added alone. The existence of MnCO₃ can modulate the temperature coefficient of capacitance τ _c toward positive, while BaZrO₃, can make c more negative. MnCO₃ and BaZrO₃ can restrain the appearance of the second phase; while BaZrO₃, can prevent the appearance of the superstructure. In the BSZN system, when 1 mass % MnCO₃ added, sintering temperature(t _s ) is lowered to 1240°C. In this study, the best sample that has the excellent properties is sample 5 with dielectric properties of ɛ _r = 43.6, τ _c = −8 × 10⁻⁶ °C⁻¹ and tan δ = 0.6 × 10⁻⁴ (1 MHz). The sintering temperature of BZN and BSZN system can be lowered to less than 1300°C.     

Dielectric Ba(Ti1?xSnx)O3 (x?=?0.13) ceramics, sintered by spark plasma and conventional methods

A two-step sintering approach composed of spark-plasma-sintering (SPS) technique at 1000 °C for 1 min and under a uniaxial pressure of 63 MPa followed by conventional sintering at 1400 °C for 3 h is proposed for synthesis of dense Ba(Ti_0.87Sn_0.13)O₃ ceramics. Starting powders had grain size of about 90 nm and were obtained by co-precipitation. The SPS pellets consist of submicron (300–500 nm) grains. X-ray diffraction analysis of as-prepared Ba(Ti_0.87Sn_0.13)O₃ ceramic shows the occurrence of cubic and tetragonal phase coexistence for the pellets obtained after SPS processing and the presence of only tetragonal phase in the samples after the second (conventional) sintering. Grain uniformity in the final product is high, with average size of ~2 μm. The apparent densities of the sintered pellets at temperature of 1400 °C were ~92% of the theoretical value of Ba(Ti_0.87Sn_0.13)O₃. The ceramics exhibit a high relative dielectric constant of 6,550 and a dielectric loss (tan δ) = 0.078 at Curie temperature of 63 °C and 10 Hz.     

Losses in diamond in the millimeter range

A theoretical and experimental investigation is made of the magnitude and nature of the dielectric losses in weakly absorbing synthetic diamonds in the wavelength range 1.75–6.8 mm at temperatures T=20–500 °C. Some samples exhibited extremely low losses (tan δ <10⁻⁵) which makes plasma-chemically deposited diamond wafers suitable for fabricating windows for megawatt continuous gyrotrons. It is shown that in principle, a further substantial reduction in losses can be achieved. Pis’ma Zh. Tekh. Fiz. 25, 85–89 (April 12, 1999)     

Impact of metal filler on the dielectric properties of Nylon 11

Dielectric measurements of pure Nylon 11 in comparison with metal (Zn) filled Nylon 11 have been carried out using an impendence analyzer in the frequency range of 10²–10⁷ Hz and temperature range 20–120 °C. Two different concentrations (1% and 5% (w/w)) of metal (Zn) fillers were used. It was observed that at low frequencies and particularly at high temperature dielectric permittivity (ε′) for 1% Zn filled sample is more than that of pure Nylon 11 whereas ε′ for 5% Zn filler is less as compared to that for pure Nylon 11. But at very high frequencies dielectric permittivity (ε′) for pure Nylon 11 is less than Zn filled samples. Also it is found that for all frequencies and particularly at high temperature ε′′ as well as tan δ are maximum for pure Nylon 11 and decrease for filled Nylon 11 samples. The Cole–Cole arcs have also been plotted for these samples. Using these plots the static and instantaneous values of dielectric permittivity and orientation polarization parameter ‘S’ have been calculated.     

Processing, sintering characteristics and dielectric properties of barium-substituted Pb(Mg1/3Nb2/3)O3–PbTiO3 solid solution

Solid solutions in the lead-based relaxor system Pb(Mg_1/3Nb_2/3)O₃–PbTiO₃ were modified by minor substitutions of Ba in the Pb-site of the perovskite lattice. The modified compositions were calcined at 830 °C for 3 h to yield fine-grained, single-phase perovskite materials. A small amount of excess MgO(0.05 wt %), which mostly served as a sintering aid, was added to the calcined batches and the resulting mixtures were sintered at temperatures between 1150 and 1250 °C for periods ranging from 3 to 5 h. The substitutions of BaO for PbO in the perovskite solid solution lattice caused a progressive lowering of the Curie point with increasing BaO content. On average, the Curie point decreased by about 10 °C for each mole of BaO substituted for PbO. Among the various Ba-substituted solid solutions studied, the one with a nominal composition Pb_0.99Ba_0.01[(Mg_1/3Nb_2/3)_0.9Ti_0.1]O₃ which has a Curie point located near 28 °C, exhibited excellent dielectric properties. On sintering at 1250 °C for 3 h, this composition yielded a density near 96% of the theoretical density. The peak dielectric constant of the composition at 1 KHz was slightly higher than 22000, and the corresponding tan δ value was 1.5% with a specific resistivity of 2.5 × 10¹² Ω cm^-1. This revised version was published online in November 2006 with corrections to the Cover Date.     

Preparation and characterization of Mn-doped BaTiO<Subscript>3</Subscript> thin films by magnetron sputtering

Barium titanate (BaTiO₃) thin films doped with Mn (0.1–1.0 at%) were prepared by r.f. magnetron sputtering technique. Oxygen/argon (O₂/Ar) gas ratio is found to influence the sputtering rate of the films. The effects of Mn doping on the structural, microstructural and electrical properties of BaTiO₃ thin films are studied. Mn-doped thin films annealed at high temperatures (700 °C) exhibited cubic perovskite structure. Mn doping is found to reduce the crystallization temperature and inhibit the grain growth in barium titanate thin films. The dielectric constant increases with Mn content and the dielectric loss (tan δ) reveals a minimum value of 0.0054 for 0.5% Mn-doped BaTiO₃ films measured at 1 MHz. The leakage current density decreases with Mn doping and is 10⁻¹¹ A/cm⁻² at 6 kV/cm for 1% Mn-doped thin films.     

Dielectric, elastic, anelastic and conductivity behaviour of ferroelectromagnetic composites, Ni0·5Zn0·5Fe1·95O4?δ + Ba0·8Pb0·2TiO3

Ferroelectromagnetic composites with compositions, X Ni_0·5Zn_0·5Fe_1·95O_4−δ + (1 − X) Ba_0·8Pb_0·2TiO₃, in which X varies as 0, 0·005, 0·010, 0·015, 0·020, 0·040, 0·060, 0·080 and 1 in mole %, were prepared by conventional ceramic double sintering process. The presence of two phases was confirmed by X-ray diffraction. The temperature variation of dielectric constant, ɛ′, dielectric loss, tan δ, d.c. conductivity, a.c. conductivity, elastic and anelastic behaviour of ferrite-ferroelectric composites were studied in the temperature range 30–350°C. The a.c. conductivity measurements on these composites in the frequency range 100 Hz-1 MHz at room temperature reveal that the conduction mechanism is due to small polaron hopping. The dielectric and elastic data were discussed in the light of phase transitions.     

Dielectric properties and optical absorption of X-ray irradiated KD2PO4

The effects of X-ray irradiation on the dielectric constant (K) and loss (tan ) in the frequency range 10² to 3 × 10⁵ Hz, temperature range 30 to 105 ° C, and on optical absorption, have been studied. All these parameters are found to be decreased considerably with increasing doses of X-ray irradiation. The effects of irradiation on these parameters for KD₂PO₄ crystals are found to be greater than those of KH₂PO₄.     

Variation of electrical properties in sepiolite during dehydration

The dielectric constant (K), loss (tanδ) andac conductivity of a sepiolite sample have been measured as a function of frequency in the range 10²-10⁷ Hz and in the temperature region 30–400°C. Thedc conductivities of hot pressed pellets were measured in the temperature range 30–550°C.K and tanδ of these samples decrease with increasing frequency. Results of these measurements have been correlated with the structural transformation accompanying dehydration, making use ofdta, ir and x-ray data. The moderately large value of activation energy (∼ 2·2 eV) in the intrinsic range suggests that the conduction process is most probably associated with ions.     

Electrical properties of ion irradiated polypropylene films

The effect of high-energy (50 MeV) Li³⁺ ion beam irradiation on polypropylene (PP) film has been studied in the fluence range 2.4 × 10¹²−l.5 × 10¹⁴ ions/cm². The a.c. electrical properties of PP films were measured in the frequency range from 0.05– 100 kHz, and at temperature range between 30 and 140°C. This study indicates two peaks at 60°C and 120°C with comparatively high magnitudes. There is an exponential increase in conductivity with log of frequency and the effect is significant at higher fluences. The loss factor (tan δ) vs frequency plot suggests that PP film based capacitors may be useful below 10 kHz. The capacitance is constant over a wide temperature range up to 130°C. FTIR spectra of the PP films before and after irradiation indicate that intensity of C-H stretching vibration at 2900 cm⁻¹ is modified. The presence of many new peaks with the increase of fluence suggests the formation of alkanes and alkynes which might be responsible for the observed changes in the dielectric and electrical properties of PP films.     

Dielectric properties of LiF-B2O3 glasses doped with certain rare earth ions

Dielectric constantɛ, loss tanδ and a.c. conductivityσ of LiF-B₂O₃: Ln³⁺ (where Ln=Ce, Pr, Nd and Tb) glasses are studied as functions of frequency (in the range 10²–10⁶ Hz) and temperature (range 30–200°C). The dielectric breakdown strength of these glasses was also determined at room temperature in an air medium. The rate of increase ofɛ and tanδ with temperature decreases with decrease in the ionic radius of RE³⁺ ion whereas the dielectric breakdown strength, the activation energy for a.c. conduction in the high temperature region decreases with increase in the ionic radius of RE³⁺ ion. An attempt has been made to explain the a.c. conduction in these glasses on the basis of quantum mechanical tunnelling (QMT) model.     

Microstructure and microwave dielectric characteristics of CaO–B2O3–SiO2 glass ceramics

CaO–B₂O₃–SiO₂ (CBS) glass powders are prepared by traditional glass melting method, whose properties and microstructures are characterized by Differential thermal analysis (DTA), X-ray diffraction (XRD) and scanning electron microscopy (SEM). It is found that the pure CBS glass ceramics possess excellent dielectric properties (ε _r = 6.5, tan δ = 5 × 10⁻³ at 10 GHz), but a higher sintering temperature (>900 °C) and a narrow sintering temperature range (about 10 °C). The addition of a low-melting-point CaO–B₂O₃–SiO₂ glass (LG) could greatly decrease the sintering temperature of CBS glass to 820 °C and significantly enlarge the sintering temperature range to 40 °C. The CBS glass ceramic with 30 wt% LG glass addition sintered at 840 °C exhibits better dielectric properties: ε _r ≈ 6, tan δ < 2 × 10⁻³ at 10 GHz, and the major phases of the sample are CaSiO₃, CaB₂O₄ and SiO₂.