Si—C—N微粉的硅氨烷先驱体的合成及气化行为

研究了用气相裂解法制备Ｓｉ－Ｃ－Ｎ复合纳米微粉时ＣＨ３ＳｉＨＣｌ２氨解产物先驱体的合成及形成气溶胶时的行为,结果表明：合成温度对先驱体的摩尔质量有较大的影响,摩尔质量随氨解温度的降低而增大;在温度较高时（１０℃）合成的先驱体的摩尔质量小,分子内端基存在较多的ＮＨ２基因,在气化时－ＮＨ２基团与Ｓｉ－Ｈ交联而使残余物增加;在－１０℃时合成的先驱体摩尔质量较大,分子内端基上－ＮＨ２基因较少,在气化时残余     

含氮聚硅氧烷配位体及其Cu^2＋络合物的介电性能

研究了ｎ－β（氨乙基）－γ（氨丙基）三乙氧基硅烷（ＮＨ２（ＣＨ２）２ＮＨ（ＣＨ２）３Ｓｉ（ＯＥｔ）３）与二甲基二乙氧基硅烷（ＣＨ３）２Ｓｉ（ＯＥｔ）２）共水解，制备含（ＣＨ２）３ＮＨ（ＣＨ２）２ＮＨ２功能基的聚硅氧烷配位体，用ＩＲ，＾１ＨＮＭＲ和元素分析法对水解产物分析证明，ＮＨ２（ＣＨ２）２ＮＨ（ＣＨ２）３Ｓｉ（ＯＥｔ）３与（ＣＨ３）２Ｓｉ（ＯＥｔ）２进行了共水解反应，而且水解程度随ＮＨ２（ＣＨ     

纳米Si/C/N复相粉体的制备及其在不同基体中的微波介电特性

以六甲基二硅胺烷（（Ｍｅ_３Ｓｉ）_２ＮＨ）（Ｍｅ：ＣＨ_３）为原料,用双反应室激光气相合成纳米粉体装置制备了纳米Ｓｉ／Ｃ／Ｎ复相粉体．研究了纳米Ｓｉ／Ｃ／Ｎ复相粉体在不同基体中８．２～１２．４ＧＨｚ的微波介电特性,纳米粉体介电常数的实部（ε’）和虚部（ε”）随频率增大而减小,介电损耗（ｔｇδ＝ε”／ε’）较高·纳米Ｓｉ／Ｃ／Ｎ复相粉体中的ＳｉＣ微晶固溶了大量的Ｎ原子,在纳米Ｓｉ／Ｃ／Ｎ复相粉体中形成大量的带电缺陷;极化弛豫是吸收电磁波的主要原因．     

高分散、均混合Al2O3-SiC-ZrO2(3Y)水悬浮液

用微波法制备主水合二氧化锆,通过包覆工艺,将Ｙ（ＯＨ）３均匀地包覆在水合二氧化锆粒子表面,制备出ＺＯ２（３Ｙ）的先驱体。然后用聚甲基丙烯酸铵（ＰＭＡＡ－ＮＨ４）对α－Ａｌ２Ｏ３、纳米ＳｉＣ及包覆水合二氧化锆表面的改性。     

化学气相淀积制备Si3N4超细粉末

本文研究了ＳｉＣｌ４－ＮＨ３－Ｎ２－Ｈ２系统平衡热力学，确定了Ｓｉ３Ｎ４合成的最佳热力学条件。采用电阻炉化学气相淀积法制备了Ｓｉ３Ｎ４超细粉末，并考察了工艺条件对颗粒形貌的影响。     

SiO2—C—N2系统中气相对相稳定的影响

研究了ＳｉＯ２－Ｃ－Ｎ２系统中一定Ｎ２分压下，温度与Ｏ２、ＳｉＯ、ＣＯ气体分压对相稳定性的影响，绘制了平衡状态下的相稳定性关系图，并以此指导碳热还原氮化法合成高纯Ｓｉ３Ｎ４粉的工艺制备条件。     

SiO_2－C－N_2系统中气相对相稳定的影响

研究了ＳｉＯ２－Ｃ－Ｎ２系统中一定Ｎ２分压下，温度与Ｏ２、ＳｉＯ２、ＣＯ气体分压对相稳定性的影响，绘制了平衡状态下的相稳定性关系图．并以此指导碳热还原氮化法合成高纯Ｓｉ３Ｎ４粉的工艺制备条件．     

聚硼氮烷先驱体制备氮化硼陶瓷纤维的研究

以ＢＣｌ３和ＨＮ（ＳｉＭｅ３）２为原料，合成了具有可纺性的聚硼氮烷先驱体，并以此先驱体为原料在单孔纺丝装置上熔融纺制成先驱体丝，将先驱体丝在ＢＣｌ３，ＮＨ３气氛下进行不熔化处理，使得聚硼氮烷由线型结构向平面网状和体型转变，最后在Ｎ气气氛下热处理至１６００℃，获得了ｈ－ＢＮ陶瓷纤维。     

气相反应法合成超细粉末过程中的r~＊叶和晶型的研究

本文以ＳｉＣｌ４－ＮＨ３、ＳｉＣｌ４－Ｏ２、ＳｉＣｌ４－Ｎ２－Ｈ２、ＴｉＣｌ４－ＮＨ３－Ｈ２、ＴｉＣｌ４－Ｎ２－Ｈ２、ＴｉＣｌ４－Ｏ２、ＡｌＣｌ３－Ｏ２等为体系，运用均匀成核理论，研究了平衡常数Ｋｐ、过饱和比Ｓ及临界核半径，ｒ＊等因素对气相反应法中超细粉末的形成及粉末结构状态的影响．结果表明，当２ｒ＊大于某物质的晶格常数时，用气相反应法得到的该物质的超细粉末一般为晶体粉末，反之则得到无定形粉末．     

树脂热解炭制备SiC纳米微粉

用自制的酚醛树脂热解炭作炭源，用ＳｉＯ２纳米微粉作硅源，根据碳热还原原理，利用常规加热和微波加热两种方式，分别制备了ＳｉＣ纳米微粉，Ｘ射线衍射，分析电镜检测结果表明：制备工艺和条件对ＳｉＣ纳米微粉的性质有较大的影响。     

VLE data for CO2-CF2Cl2, N2-CO2, N2-CF2Cl2 and N2-CO2-CF2Cl

Knowledge about vapour-liquid (VLE) is required as a basis of reliable calculations for separation processes. Correlations available for the prediction of T, p, x, y data are less accurate for mixtures at high pressures and mixtures containing supercritical components. The results of VLE experiments are reported and compared with data calculated with equations of state.     

Elastic and Electronic Properties of Superconducting CaPd 2 As 2 and SrPd 2 As 2 vs. Non-superconducting BaPd 2 As 2

The first-principles calculations were performed to predict the elastic and electronic properties of the superconducting ThCr₂Si₂-type phases CaPd₂As₂ and SrPd₂As₂ in comparison with the non-superconducting CeMg₂Si₂-type phase BaPd₂As₂. Besides, the same properties were compared for CeMg₂Si₂- and ThCr₂Si₂-type polymorphs of BaPd₂As₂. We found that all these phases are mechanically stable and belong to soft materials with low hardness. The near-Fermi region is formed by the valence states of the blocks [Pd₂As₂] with decisive contributions of Pd 4d states. The values of N(E _F) increase in the sequence: CaPd₂As₂ < SrPd₂As₂ < BaPd₂As₂, i.e. in the reverse sequence relative to the transition temperatures T _C. Thus, the change in T _C cannot be explained by the electronic factor, i.e. by the simple correlation T _C～N(E _F). Most likely the decrease in T _C in the sequence CaPd₂As₂ → SrPd₂As₂ and the absence of a superconducting transition in BaPd₂As₂ are related to the structural factors and the peculiarities of the electron–phonon coupling mechanism.     

Preparation of ZrO2-CeO2 and HfO2-CeO2 nanopowders

We prepared weakly agglomerated powders of ZrO₂-CeO₂ and HfO₂-CeO₂ solid solutions 5–8 nm in particle size, consisting of monoclinic and tetragonal phases. After heat treatment at 1200°C, the crystallite size was 30 and 14 nm, respectively. We also examined the effect of precipitate freeze drying on the crystallization of hafnia-based solid solutions containing up to 20 mol % CeO₂.     

SiO2—TiO2—ZrO2系涂层的制备及其特性

用溶胶－凝胶法（sol-gel method）在不锈钢表面制备了SiO2-TiO2-ZrO2系无机氧化膜（STZ）。用DTA／TG、IR、XRD和SEM等手段研究了涂层制备时由凝胶向玻璃态的转变以及涂层薄膜的显微结构特点，考察了涂层对基体的保护效果。试验结果表明，在溶胶至凝胶最终转变为无机氧化物的过程中形成了无机网络，Si^4 和Zr^4 充当了网络骨架的形成离子。涂层为无定型玻璃态，其间混有石英、锐钛矿或金红石等微晶。     

Thermal diffusion in binary mixtures H2-CCl2F2 and H2-CHClF2

Thermal diffusion coefficients were measured in two gaseous mixtures, in which one component was close to the critical temperature, in the pressure range (19.6–127.4)·10⁴ N/m² and at a freon concentration of 0.25–0.8.     

Electronic structure and photoelectrical properties of Ag2In2SiSe6 and Ag2In2GeSe6

High-quality Ag₂In₂SiSe₆ and Ag₂In₂GeSe₆ single crystals have been successfully grown by the vertical Bridgman–Stockbarger method and the horizontal gradient freeze technique, respectively. For pristine and Ar⁺ ion-irradiated surfaces of the single crystals under study, X-ray photoelectron core-level and valence-band spectra have been measured. Results of these studies allow for concluding that the Ag₂In₂SiSe₆ and Ag₂In₂GeSe₆ single crystal surfaces are sensitive with respect to Ar⁺ ion-irradiation. In particular, Ar⁺ ion-bombardment with energy of 3.0 keV during 5 min at an ion current density of 14 μA/cm² has induced some modification in top surface layers leading to an increase of content of In atoms in the layers. Comparison on a common energy scale of the X-ray emission Se Kβ₂ bands representing energy distribution of the Se 4p states and the X-ray photoelectron valence-band spectra reveal that the main contribution of the valence Se p states occur in the upper portion of the valence band, with also their significant contributions in other valence band regions of the Ag₂In₂SiSe₆ and Ag₂In₂GeSe₆ single crystals. In addition, for the single crystals under consideration, temperature dependences of specific dark conductivity and spectral distributions of photoconductivity have been explored. It has been established that the Ag₂In₂SiSe₆ and Ag₂In₂GeSe₆ single crystals are high-resistance semiconductors with value of the specific electrical conductivity σ ≈ 1.67 × 10^–9 Ω^–1 сm^–1 (at Т = 300 K). The both compounds are materials with p-type conductivity.     

SiO2-TiO2-ZrO2涂层的制备及其特性

用溶胶-凝胶法(sol-gel method)在不锈钢表面制备了 SiO\-2-TiO\-2-ZrO\-2系无机氧化膜(STZ).用DTA/TG、IR、XRD和SEM等手段研究了涂层制备时由凝胶向玻璃态的转变以及涂层薄膜的显微结构特点,考察了涂层对基体的保护效果. 试验结果表明,在溶胶至凝胶最终转变为无机氧化物的过程中形成了无机网络,Si4+ 和Zr4+充当了网络骨架的形成离子.涂层为无定型玻璃态,其间混有石英、锐钛矿或金红石等微晶.     

晶态骨架介孔CeO2和CeO2-ZrO2的合成与结构表征

以乙酸铈、乙酸锆为无机源,嵌段共聚物P123为模版剂,采用溶胶-凝胶法合成了介孔CeO2及CeO2-ZrO2复合体,用XRD、氮气吸附脱附、TEM、HRTEM、SAED等对材料进行了表征.结果表明,所得介孔CeO2具有规则的晶态孔道结构,孔径约在10nm左右,特别是其孔壁晶粒高度定向排列且平行于孔道方向.原位高温TEM观测表明,该介孔CeO2在800℃仍具有很高的孔道完整性.掺杂ZrO2后发现,在ZrO2摩尔含量低于30%时仍具备高度定向排列结构,高于30%时骨架晶粒取向逐渐趋向无序化.