高精度无油封压力传感器设计

设计了一种新的传感器封装方法。该方法采用双膜片结构,无油封装。压力膜片为硅-蓝宝石材料,通过硅的压阻效应,利用下膜片实现压力传递,上膜片的惠斯登电桥将感受的压力转换为电压信号。经过温度补偿,使热漂移信号大幅度降低。试验结果表明:在常温条件下,传感器准确度为0.14%FS。在-55~200℃范围内,热零点漂移为0.48×10-3%FS/℃,热灵敏度漂移为0.61×10-3%FS/℃。     

微型硅谐振式压力传感器的研制

利用微电子机械加工技术成功地研制出电热激励、压阻拾振的高精度硅谐振梁式压力传感器。传感器的谐振器的品质因素Q值在真空中大于 10 0 0 0。采用特殊闭环自激振荡方式测定压力传感器的压力特性 ,压力测试范围 0～ 40 0kPa ,线性相关系数 0 .9999,测试精度优于 0 .1%FS。     

基于LTCC的无线无源双参数传感器

设计了一个基于低温共烧陶瓷(LTCC)技术的无线无源双参数传感器,传感器基于LC(inductor-Capacitor)谐振原理,询问天线通过无线遥测的方式获取传感器的压力和温度信号.在传感器基板上集成了两个LC谐振回路,谐振回路中两个电容分别对压力和温度参数敏感,同时两电感采用特殊结构来减少双参数在测试时的互感串扰.搭建了温度-压力复合测试平台,对传感器进行了相关测试.传感器最高测试温度为300 ℃,温度灵敏度为-14.27 kHz/℃,压力灵敏-13.75 kHz/kPa,实验结果表明,这种设计能明显减少两参数之间的互感影响.     

片上温漂补偿的压阻式压力芯片的设计与制造

为解决硅压阻式压力芯片灵敏度随着温度变化发生漂移的问题,设计了一种在片上集成温度补偿结构的压力芯片。在压力芯片上制备电阻温度系数(TCR)为负数的多晶硅电阻用于分压,调整不同温度下的惠斯通电桥端电压以达到灵敏度补偿的效果。本文的研究包含理论分析、参数计算,并进行了芯片制备和性能测试。性能测试结果表明,补偿后的耐高温封装传感器芯片在-50℃～270℃区间内,温漂为-0.034%FS/℃,简易封装传感器芯片在-40℃～125℃区间内的温漂为-0.008%FS/℃,该补偿芯片的温漂远小于无补偿的压力芯片。     

宽温区工作压力传感器热力学研究

介绍了硅-蓝宝石压力传感器的钛合金-蓝宝石复合弹性膜片在宽温区工作时温度变化材料不匹配引起的结构热应力,对弹性膜片的受热情况进行了分析,对不同结构形式传感器热稳定性影响程度进行了对比,利用P型掺杂硅温度特性减少结构热应力影响、降低传感器的热零点漂移.通过膜片结构选择和设计、材料选择、工艺优化和控制等可以使硅-蓝宝石压力传感器在-55~350℃宽温度范围内工作时热漂移不大于0.015%FS/℃,提高了宽温区工作时传感器的热稳定性.     

一种新型微机械谐振式压力传感器研究

提出了一种微机械谐振式压力传感器的新结构.该传感器采用了电磁激励和差分检测方式.谐振器的制作采用了30μm厚扩散硅的(100)硅片.从而实现了谐振器与压力膜的一体化,避免了谐振梁与压力膜键合引入的应力,并且工艺简单易于实现.文中介绍了结构的有限元仿真(FEA-ANSYS Simulation)优化,工艺制作流程,及实验测试.在低真空下测试其品质因数(Q)高于10 000,测量范围为0～100 kPa,非线性度为0.62%,分辨率为1/10 000,灵敏度为200 Hz/kPa.     

基于AGC闭环控制的谐振式压力传感器驱动仿真及接口电路设计

谐振式压力传感器利用正反馈原理,构成包括机械谐振子在内的机电一体的高品质闭环谐振系统,闭环拓扑结构对保持机械谐振器振荡的稳定性和可靠性起着重要作用。本文针对一种典型结构的静电驱动电容检测谐振式压力传感器,在分析工作原理的基础上,构建了其行为级闭环自激仿真模型,在MATLAB中对自激回路的起振情况进行了仿真;最后设计了基于AGC的闭环控制电路。     

圆片级叠层键合技术在SOI高温压力传感器中的应用

针对绝缘体上硅(SOI)异质异构结构特点,提出了两次对准和两次阳极键合工艺方法,实现了圆片级SOI高温压力传感器硅敏感芯片的叠层键合。采用玻璃—硅—玻璃三层结构的SOI压力芯片具有良好的密封性和键合强度。经测试结果表明:SOI高温压力传感器芯片键合界面均匀平整无缺陷,漏率低于5×10~(-9)Pa·m~3/s,键合强度大于3 MPa。对芯片进行无引线封装,在500℃下测试得出传感器总精度小于0. 5%FS。     

LC谐振式压力传感器的高温关键参数研究

无线无源高温压力传感器在高温、高压等恶劣环境中应用日益广泛,其耐高温性能已成为衡量传感器的一项最基本且重要的指标。利用低温共烧陶瓷LTCC(Low Temperature Co-Fired Ceramic)技术,分别设计和制作了陶瓷基片上电感及电容器件,并进行高温特性测试,通过讨论和分析确定了造成电感和电容随温度变化的原因。测试结果表明:在100℃~500℃温度范围内,电感L基本保持不变,等效串联电阻R增大了2.7倍,电容C增大了5.3%,从而LC谐振传感器的品质因数Q减小了72.8%。该测试及分析对高温环境下基于LC谐振式压力传感器的优化设计具有重要的指导意义。     

气体流速流向传感器及其温度补偿的研究

设计了一种内燃机用气体流速、流向传感器,阐述了传感器的工作原理;介绍了应用单片机对传感器输出信号进行线性化和温度补偿处理的方法。试验结果表明:该传感器在-20~100℃温度范围内,温度稳定性高,零点温度漂移为4.0×10-3%FS/℃,准确度可达到±1.0%FS,性能指标达到了设计要求。     

电磁激励谐振式MEMS压力传感器闭环控制研究

在谐振器动力学分析的基础上,系统地比较了谐振式压力传感器检测速度谐振频率和检测位移谐振频率的优缺点.设计出一种零相移的电磁激励谐振式MEMS压力传感器闭环控制系统,该系统利用检测速度谐振频率提高传感器的信号检测稳定性,并且控制电路无需移相环节即可保证传感器在工作频率范围内实现稳定可靠的闭环自激.实验结果表明,采用该闭环控制系统的传感器具有较高的稳定性,传感器长时漂移低于0.025%F.S.,在10 hPa～1 050 hPa范围内非线性度为0.06%.     

Design and fabrication of a resonant pressure sensor by combination of DETF quartz resonator and silicon diaphragm

A new type of resonant pressure sensor is presented which is realized by combination of a double-ended tuning fork (DETF) quartz resonator and a silicon diaphragm. To examine the feasibility and investigate the performance of this innovation, theoretical analysis and finite elements method are employed to optimize the structure parameters. Micromachining technology are involved in the fabrication of the silicon diaphragm and the DETF quartz resonator, which are fabricated separately and bounded together afterwards. Performances of the sensor prototypes are experimentally investigated. Preliminary testing results demonstrate that the sensor features a high sensitivity of approximately 452.5 Hz/kPa in the operating range of 0–6 kPa at room temperature, with a non-linearity <0.035 % FS and a hysteresis of 0.055 % FS. In addition, the maximum zero-drift is about 0.5 Hz/h which reveals favorable frequency stability. Thus, the feasibility of this scheme is verified. Due to the excellent performances such as high accuracy, high sensitivity, low cost and simple fabrication, this novel resonant sensor provides a commendable solution for low pressure measurement.     

基于基片集成波导和消逝模谐振腔的压力传感器设计

提出一种新型的基于基片集成波导和消失模谐振腔的压力传感结构。设计了圆形空腔,当施加外界压力时,圆形空腔发生形变从而使谐振腔谐振频率变化。采用共面波导线对谐振腔进行耦合馈电并将频率信号传输出来。通过读取传感器的回波损耗参数( S11)来表征压力与频率的关系。利用高频仿真软件HFSS对谐振腔进行了仿真设计和优化,设计尺寸为30 mm×30 mm×1.93 mm,与传统谐振腔相比体积明显减小。传感器基底为Rogers 4003C板材,采用PCB技术进行加工。搭建压力测试平台对传感器进行测试,结果表明在0~3 N的压力范围内变化100 MHz,绝对灵敏度为25 MHz/N。仿真和实测结果比较吻合,验证了所设计压力结构的有效性。     

基于SOI的硅微谐振式压力传感器芯片制作

采用SOI硅片,基于MEMS技术,设计并加工了一种新型三明治结构的硅微谐振式压力传感器,根据传感器敏感单元的结构设计,制定了相应的制备工艺步骤,并且针对湿法深刻蚀过程中谐振子的刻蚀保护等问题,提出了一种基于氮化硅、氧化硅和氮化硅三层薄膜的保护工艺,实验表明,在采用三层薄膜保护工艺下进行湿法刻蚀10 h后,谐振子被完全释放,三层薄膜保护工艺对要求采用湿法刻蚀镂空释放可动结构具有较高的实用价值。最后对加工完成的谐振式压力传感器进行了初步的性能测试,结果表明,在标准大气压力下谐振子的固有频率为9.932 kHz,品质因数为34。     

VHF single crystal silicon capacitive elliptic bulk-mode disk resonators-part II: implementation and characterization

This work, the second of two parts, reports on the implementation and characterization of high-quality factor (Q) side-supported single crystal silicon (SCS) disk resonators. The resonators are fabricated on SOI substrates using a HARPSS-based fabrication process and are 3 to 18 /spl mu/m thick. They consist of a single crystal silicon resonant disk structure and trench-refilled polysilicon drive and sense electrodes. The fabricated resonators have self-aligned, ultra-narrow capacitive gaps in the order of 100 nm. Quality factors of up to 46 000 in 100 mTorr vacuum and 26000 at atmospheric pressure are exhibited by 18 /spl mu/m thick SCS disk resonators of 30 /spl mu/m in diameter, operating in their elliptical bulk-mode at /spl sim/150 MHz. Motional resistance as low as 43.3 k/spl Omega/ was measured for an 18-/spl mu/m-thick resonator with 160 nm capacitive gaps at 149.3 MHz. The measured electrostatic frequency tuning of a 3-/spl mu/m-thick device with 120 nm capacitive gaps shows a tuning slope of -2.6 ppm/V. The temperature coefficient of frequency for this resonator is also measured to be -26 ppm//spl deg/C in the temperature range from 20 to 150/spl deg/C. The measurement results coincide with the electromechanical modeling presented in Part I.     

Contactless electromagnetic switched interrogation of micromechanical cantilever resonators

A principle for contactless interrogation of passive micromechanical resonator sensors is proposed. The principle exploits an external primary coil electromagnetically air-coupled to a secondary coil which is connected to a conductive path on the resonator. The interrogation periodically switches between interleaved excitation and detection phases. During the excitation phase the resonator is driven into vibrations, while in the detection phase the excitation signal is turned off and the decaying oscillations are contactless sensed. The principle advantageously avoids magnetic properties required to the resonator, thereby ensuring compatibility with standard silicon microfabrication processes. The principle has been implemented on a MEMS SOI microcantilever resonator sensor with mechanical resonant frequency of 10.186 kHz and has been demonstrated to work over a distance of up to 1 cm. Tests based on the deposition and evaporation of a water droplet have demonstrated the capability to sense physical and chemical quantities which affect either the resonant frequency or the quality factor of the resonator.     

Design of wideband bandpass filter using short‐circuited circular patch resonator loaded with slots

This paper presents a wideband bandpass filter design based on a short‐circuited circular patch resonator with inductively loaded slots. The cavity model method is used to analyze the excited resonances of the resonator. According to the illustration of the cavity model, the TM₀₁₀ mode is excited as the fundamental mode, the resonant frequency of which is much lower than that of the TM₁₁₀ mode and can be further lowered by the loaded arc‐oriented slots. Therefore, the proposed resonator can be used to design a filter with compact size. In addition, one of the two orthogonal degenerate TM₁₁₀ modes can be independently tuned by the slot along the symmetric plane without affecting the TM₀₁₀ mode. Since the resonant frequency of each mode can be tuned independently by the parameters of the slots, and the coupling between resonant modes of the resonator and source/load can be adjusted by the feeding angle and the capacitive loaded stubs on the feeding lines, the center frequencies and bandwidths of the designed bandpass filters can be tuned easily. The analysis is theoretically and experimentally verified by two examples with good agreement between the simulated and measured results.     

Chemical sensor based on a novel capacitive microwave flexible transducer with polymer nanocomposite-carbon nanotube sensitive film

Microsystem Technologies - This study presents the results on the feasibility of a resonant planar chemical capacitive sensor in the microwave frequency range suitable for gas detection and...     

Terfenol-D/SAW谐振器/Terfenol-D复合磁传感器

设计了一种由超磁致伸缩材料Terfenol-D和SAW谐振器构成的复合磁传感器,在磁场作用下,Terfenol-D沿长度方向伸缩,并将应力应变传递至SAW谐振器,使其产生应变,造成谐振频率改变,通过测量SAW谐振器谐振频率的变化来测量磁场强度.分析了该磁传感器的传感原理,建立了该复合磁传感器的静态模型,对弹性敏感元件进行了受力分析,根据压磁方程和受力平衡得到该磁传感器的静态特性.实验结果表明:该复合磁传感器灵敏度可达341.6Hz/Oe,较Terfenol-D/SAW谐振器结构灵敏度提高了3倍;测量谐振频率的分辨率为1Hz,SAW谐振器频率稳定度为0.1×10-6时,该磁传感器对磁场的分辨率为10-6T.     

谐振式光纤陀螺偏振波动噪声的温度特性

光纤环形谐振腔环境温度变化带来的偏振波动噪声是影响谐振式光纤陀螺检测精度的主要光学噪声源之一,通过控制谐振腔温度,可以使偏振波动噪声得到有效抑制.为了抑制偏振波动噪声,减小R-FOG精度受FRR温度变化的影响,从理论上分析了谐振腔温度变化对谐振曲线、解调曲线的影响;针对不同温度下光纤环的谐振特性、解调曲线特性、陀螺零偏及零偏稳定性开展了实验,并对实验结果进行了分析.结果表明,谐振腔的工作温度为27.00℃时,两本征偏振态相距最远,总谐振曲线关于谐振频率点对称,谐振频率点检测误差可以忽略;陀螺零偏稳定性近似等于谐振腔温度为25.50℃时的1/100,在150 s的采样时间内达到0.07°/s,陀螺检测精度得到很大提高.