共查询到20条相似文献,搜索用时 15 毫秒
1.
Laskar J. Ketterson A.A. Baillargeon J.N. Brock T. Adesida I. Cheng K.Y. Kolodzey J. 《Electron Device Letters, IEEE》1989,10(12):528-530
The observation of negative differential resistance (NDR) and negative transconductance at high drain and gate fields in depletion-mode AlGaAs/InGaAs/GaAs MODFETs with gate lengths L g ~0.25 μm is discussed. It is shown that under high bias voltage conditions, V ds>2.5 V and V gs>0 V, the device drain current characteristic switches from a high current state to a low current state, resulting in reflection gain in the drain circuit of the MODFET. The decrease in the drain current of the device corresponds to a sudden increase in the gate current. It is shown that the device can be operated in two regions: (1) standard MODFET operation for V gs<0 V resulting in f max values of >120 GHz, and (2) a NDR region which yields operation as a reflection gain amplifier for V gs >0 V and V ds>2.5 V, resulting in 2 dB of reflection gain at 26.5 GHz. The NDR is attributed to the redistribution of charge and voltage in the channel caused by electrons crossing the heterobarrier under high-field conditions. The NDR gain regime, which is controllable by gate and drain voltages, is a new operating mode for MODFETs under high bias conditions 相似文献
2.
Tahui Wang Cheng-Hsiang Hsieh 《Electron Devices, IEEE Transactions on》1990,37(9):1930-1938
Nonequilibrium electron transport in InGaAs pseudomorphic MODFETs has been analyzed with the moment equations approach. In the model, the momentum and energy balance equations for the two-dimensional electrons in the InGaAs channel are solved with relaxation times generated from a Monte Carlo simulation. The two-dimensional electron wave functions and the quantized state energies in the InGaAs quantum well are calculated exactly from the Schrodinger equation along the direction perpendicular to the quantum well. Also included is a two-dimensional Poisson equation solver. In the calculation, all of the equations are solved iteratively until a self-consistent solution is achieved. The simulation results for a realistic device structure with a 0.5-μm recessed gate show a significant overshoot velocity of 4.5×107 cm/s at a drain bias of 1.0 V. Electron temperature reaches a peak value of around 2500 K under the gate. In energy transport, the diffusive component of the energy flux is found to be dominant in the high-field region 相似文献
3.
Characterization of InGaAs/AlGaAs pseudomorphic modulation-doped field-effect transistors 总被引:1,自引:0,他引:1
《Electron Devices, IEEE Transactions on》1986,33(5):564-571
High-performance pseudomorphic Iny Ga1-y As/Al0.15 - Ga0.85 As (0.05 le y le 0.2 ) MODFET's grown by MBE have been characterized at dc (300 and 77 K) and RF frequencies. Transconductances as high as 310 and 380 mS/mm and drain currents as high as 290 and 310 mA/mm were obtained at 300 and 77 K, respectively, for 1-µm gate lengths and 3-µm source-drain spacing devices. Lack of persistent trapping effects,I-V collapse, and threshold voltage shifts observed with these devices are attributed to the use of low mole fraction Alx Ga1-x As while still maintaining 2DEG concentrations of about 1.3 × 1012cm-2. Detailed microwave S-parameter measurements indicate a current gain cut-off frequency Of 24.5 GHz Wheny = 0.20 , which is as much as 100 percent better than similar GaAs/AlGaAs MODFET structures, and a maximum frequency of oscillation of 40 GHz. These superior results are in part due to the higher electron velocity of InGaAs as compared with GaAs. Velocity field measurement performed up to 3 kV/cm using the magnetoresistance method indicates an electron saturation velocity of greater than 1.7 × 107cm/s at 77 K fory = 0.15 , which is 20 percent higher than GaAs/AlGaAs MODFET's of similar structure. 相似文献
4.
A. Yu. Egorov A. G. Gladyshev E. V. Nikitina D. V. Denisov N. K. Polyakov E. V. Pirogov A. A. Gorbazevich 《Semiconductors》2010,44(7):919-923
Double pulse doped (δ-doped) InGaAs/AlGaAs/GaAs pseudomorphic high-electron-mobility transistor (HEMT) heterostructures were
grown by molecular-beam epitaxy using a multiwafer technological system. The room-temperature electron mobility was determined
by the Hall method as 6550 and 6000 cm2/(V s) at sheet electron densities of 3.00 × 1012 and 3.36 × 1012 cm−2, respectively. HEMT heterostructures fabricated in a single process feature high uniformity of structural and electrical
characteristics over the entire area of wafers 76.2 mm in diameter and high reproducibility of characteristics from process
to process. 相似文献
5.
Jung-Hui Tsai 《Microelectronics Reliability》1999,39(9):1379
A new functional AlGaAs/GaAs heterostructure-emitter bipolar transistor (HEBT) with a pseudomorphic InGaAs/GaAs quantum-well (QW) base structure is presented. Due to the insertion of an InGaAs QW between the emitter–base (E–B) junction, the valence band discontinuity can be enhanced. The excellent transistor characteristics including a high current gain of 280 and a low offset voltage of 100 mV are obtained. In addition, an interesting multiple S-shaped negative differential resistance (NDR) phenomenon is observed under the inverted operation mode. This may be attributed to an avalanche multiplication and sequential two-stage barrier lowering effect. 相似文献
6.
W. Z. Shen W. G. Tang S. C. Shen A. Dimoulas 《Journal of Infrared, Millimeter and Terahertz Waves》1994,15(11):1809-1818
We investigate the effects of spacer layer thickness on the optical and transport properties of the n-typeδ-doped pseudomorphic Al0.30Ga0.70As/In0.15Ga0.85As / GaAs structures. Aδ-doped AlGaAs/InGaAs/GaAs structure with a 6nm spacer layer yields a sheet carrier concentration of 1.5×1012 cm?2 at 77K with electron mobility of 6.4×103 cm2/Vs, 3.11×104 cm2/Vs, and 3.45×104 cm2/Vs at room temperature, 77 and 20K, respectively. The effects of the different scattering mechanisms on luminescence linewidth and electron mobility have also been discussed. 相似文献
7.
Ananth Dodabalapur V. P. Kesan D. P. Neikirk B. G. Streetman M. H. Herman I. D. Ward 《Journal of Electronic Materials》1990,19(3):265-270
In this study, we describe the correlations between the photoluminescence (PL) spectra and electrical properties of pseudomorphic
modulation-doped AlGaAs/InGaAs/GaAs quantum wells (MDQWs) grown by molecular beam epitaxy. In MDQWs, the presence of a large
sheet carrier density contributes significantly to the PL linewidth. At low temperatures (4.2 K), free carrier induced broadening
of the PL linewidth is influenced by the material quality of the structure. At higher temperatures (77 K), differences in
the material quality do not affect the linewidth significantly, and under these conditions the PL linewidth is a good measure
of the sheet carrier density. The ratio of the 77 K to 4.2 K PL linewidths provides useful information about the crystalline
quality of the MDQW structures as illustrated by the correlation with 77 K Hall mobility data and a simple model. We present
results of Electron Beam Electroreflectance (EBER) to characterize MDQWs and undoped quantum wells in the AlGaAs/InGaAs/GaAs
material system. Several transitions have been observed and fitted to excitonic Lorentzian lineshapes, providing accurate
estimates of transition energy and broadening parameter at temperatures of 96 K and 300 K. 相似文献
8.
Double quantum-well modulation-doped field-effect transistors (MODFETs) with planar-doped lattice-strained AlGaAs/InGaAs structure have been fabricated and characterized at DC and microwave frequencies. At 300 K the 0.3-μm gate devices show a full channel current of 1100 mA/mm with a constant extrinsic transconductance of 350 mS/mm over a broad gate voltage range of 1.6 V. Excellent microwave performance is also achieved with a maximum available gain cutoff frequency f mag of 110 GHz and a current gain cutoff frequency f r of 52 GHz. A maximum output power of 0.7 W/mm with 30% efficiency is obtained at 18 GHz 相似文献
9.
Plana R. Escotte L. Llopis O. Amine H. Parra T. Gayral M. Graffeuil J. 《Electron Devices, IEEE Transactions on》1993,40(5):852-858
Noise properties of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs (PHEMTs) have been investigated simultaneously in the low and intermediate frequency range (10 Hz to 150 MHz) and in the microwave range (4 to 18 GHz) and compared to the noise of more classical devices such as MESFETs and GaAlAs/GaAs HEMTs. Unlike the other commercially available devices, PHEMTs exhibit the unique capability of providing simultaneously state-of-the-art microwave noise performance and a reasonable low-frequency excess noise 相似文献
10.
《Electron Device Letters, IEEE》1985,6(12):628-630
Pseudomorphic In0.15 Ga0.85 As/Al0.15 Ga0.85 As modulation-doped field effect transistors (MODFET's) exhibiting extremely good dc characteristics have been successfully fabricated, dc transconductance in these strained-layer structures of 270 mS/mm were measured for 1-µm gate, normally-on devices at 300 K. Maximum drain current levels are 290 mA/mm, with excellent pinch-off and saturation characteristics. The transconductance increased to 360 mS/mm at 77 K while no persistent photoconductivity or drain collapse was observed. Preliminary microwave results indicate a 300-K current gain cutoff frequency of about 20 GHz. These results are equivalent to the best GaAs/AlGaAs MODFET results and are due in part to the improved transport properties and carrier confinement in the InGaAs quantum well. 相似文献
11.
《Electron Devices, IEEE Transactions on》1986,33(11):1626-1634
Although MODFET's have exhibited the fastest switching speed for any digital circuit technology, there is as yet no clear consensus on optimal inverter design rules. We therefore have developed a comprehensive MODFET device model that accurately accounts for such high gate bias effects as transconductance degradation and increased gate capacitance. The device model, which agrees with experimental devices fabricated in this laboratory, is used in the simulation of direct-coupled FET logic (DCFL) inverters with saturated resistor loads. Based on simulation results, the importance of large driver threshold voltage not only for small propagation delay times but for wide logic swings and noise margins is demonstrated. Furthermore, minimum delay times are found to occur at small supply voltages as seen experimentally. Both of these results are attributed to the reduction of detrimental high gate bias effects. The major effect of reducing the gate length on delay time is to decrease the load capacitance of the gate. Using 0.25-µm gates, delay times of 5 and 3.6 ps at 300 and 77 K, respectively, are predicted. Finally, the recently introduced In-GaAs/AlGaAs MODFET's are shown to have switching speeds superior to those of conventional GaAs/AlGaAs MODFET's. 相似文献
12.
Pereiaslavets B. Martin G.H. Eastman L.F. Yanka R.W. Ballingall J.M. Braunstein J. Bachem J. Ridley B.K. 《Electron Devices, IEEE Transactions on》1997,44(9):1341-1348
We have developed a new concept of narrow (50-80 Å) channel MODFETs. It is shown theoretically and experimentally that only the ground energy level is populated in the narrow-channel device. A new technique to measure mobility at the highest energies of the two-dimensional electron gas (2-DEG) was introduced. With the help of this technique it is shown that, in wide wells, electrons in the excited energy levels have low mobility and consequently degrade device performance. It is shown theoretically and experimentally that the narrow-channel device has a higher electron sheet density and mobility and consequently better performance than a conventional wide-channel MODFET. Excellent quality GaxIn1-xP/InyGa1-yAs/GaAs MODFETs with a pseudomorphic barrier and a pseudomorphic channel were grown by MBE and OMVPE. Higher than 3.4·1012 cm-2 electron sheet densities for single-side-doped MODFETs on GaAs substrate were measured. One-tenth micron gate length MODFETs achieved f T's over 100 GHz and fmax's over 180 GHz. These results are comparable to the previously reported results for GaInP MODPET with graded barriers, however the device structure is much simpler 相似文献
13.
A new AlGaAs/GaAs/InGaAs heteroconfinement tri-state switch (TSS) prepared by metal organic chemical vapor deposition has been fabricated and demonstrated. This TSS exhibits the interesting multiple negative differential resistance (MNDR) characteristics. The NDR behavior is caused by a p + n junction and sequential two-stage barrier-lowering and potential-redistribution effect that resulted from the electron confinement at AlGaAs/GaAs/InGaAs heterointerface and lnGaAs quantum well, respectively. 相似文献
14.
Huei Wang Yatsun Hwang Shaw L. Ahmadi M. Siddiqui M. Nelson B.L. Tait D.L. Martin B. Kasody R.E. Jones W.L. Brunone D. Sholley M. 《Microwave Theory and Techniques》1994,42(1):11-17
Monolithic approaches of the development to V-band frequency converters have the advantages of lighter weight and lower cost over conventional hybrid approaches for high volume insertions into satellite communication systems. This paper presents the design, fabrication, and performance of a monolithic V-band frequency converter chip set using 0.2 μm AlGaAs/InGaAs/GaAs pseudomorphic HEMT technology. This chip set consists of three monolithic macrocells and a microcell: an upconverter, a downconverter, and a frequency multiplier for LO signal. A monolithic balanced amplifier microcell is also used to form the LO chain. Individual components, including amplifiers, mixer, and frequency doublers are also described. The superb measured results obtained from this chip set show great promise of the MMIC insertions for the system applications, and represent state-of-the-art performance of MMIC at this frequency 相似文献
15.
Laskar J. Bigelow J.M. Leburton J.-P. Kolodzey J. 《Electron Devices, IEEE Transactions on》1992,39(2):257-263
The authors investigated the negative differential resistance (NDR) in the I -V characteristics of pseudomorphic AlGaAs/InGaAs/GaAs modulation doped field-effect transistors (MODFETs) with gate lengths of 0.3 μm. They experimentally verified the existence of abrupt multiple NDR in both the input circuit and the output circuit. The NDR occurs over a short range of drain voltage (less than 200 mV) and gate voltage (less than 5 mV) for NDR induced by thermionic emission. The authors provide a general interpretation of the measured DC results based on tunneling real-space transfer (TRST) which occurs because of the formation of hybrid excited states across the InGaAs channel and AlGaAs donor layer. The existence of stable reflection is verified in both the input and output circuits with stable broadband frequency response in the output circuit to at least 49 GHz. These results show that NDR via TRST in pseudomorphic MODFETs can provide wideband frequency response not limited by the electron transit time from source to drain 相似文献
16.
Lead poisoning is a serious environmental concern, which is a health threat. Existing technologies always have some drawbacks, which restrict their application ranges, such as real time monitoring. To solve this problem, glutathione was functionalized on the Au-coated gate area of the pseudomorphic high electron mobility transistor (pHEMT) to detect trace amounts of Pb2+. The positive charge of lead ions will cause a positive potential on the Au gate of the pHEMT sensor, which will increase the current between the source and the drain. The response range for Pb2+ detection has been determined in the concentrations from 0.1 pmol/L to 10 pmol/L. To our knowledge, this is currently the best result for detecting lead ions. 相似文献
17.
Eiichi Kuramochi Jiro Temmyo Hidehiko Kamada Toshiaki Tamamura 《Journal of Electronic Materials》1999,28(5):445-451
We report the control of self-organization of InxGa1−xAs/AlGaAs quantum disks on GaAs (311)B surfaces using a novel technique based upon lithography-defined SiN dot arrays. A strained
InGaAs island array selectively grown using the SiN dots provides periodic strain field. When the pitch of lateral ordering
corresponds with the period of the strain field, self-organized quantum disks stacked on the InGaAs islands are precisely
arranged just as the buried SiN dot array. The spacing of the array element is 250–300 nm (x = 0.3) and around 150 nm (x =
0.4). Vertical alignment by strain is achieved at a very thick (95 nm) separating layer. Characterization using atomic force
microscopy reveals the size-fluctuation of disk is dramatically improved with spatial ordering. 相似文献
18.
An AlGaAs/InGaAs/GaAs quantum-well MISFET developed for power operation at millimeter-wave frequencies is described. The InGaAs channel is heavily doped to increase the sheet carrier density, resulting in a maximum current density of 700 mA/mm with a transconductance of 480 mS/mm. The 0.25-μm×50-μm device delivers a power density of 0.76 W/mm with 3.6-dB gain and 19% power-added efficiency at 60 GHz. At 5.2 dB gain, the power density is 0.55 W/mm. A similar device built on an undoped InGaAs channel had much poorer power performance and no speed advantage 相似文献
19.
The authors report the fabrication and characterisation of an Al 0.43Ga0.57As/In0.2Ga0.8 As/GaAs pseudomorphic HEMT (PHEMT) with high channel conductivity grown by solid source MBE. The high conductivity of the channel is a direct consequence of the high sheet charge and high mobility that has recently been obtained by using tellurium as the n-type dopant in 43% AlGaAs. The device characteristics reflect the resulting reduction in the parasitic resistances of the high channel conductivity. Microwave measurements yield a short-circuit current gain cutoff frequency fT of 11 GHz and maximum oscillation frequency fmax of 25 GHz. A high gate-drain breakdown voltage of 26 V along with a maximum drain current density of 400 mA/mm obtained in the device illustrate the applicability of this technology in microwave power field effect transistors 相似文献
20.
The effects of hot-electron stress on electrical properties in AlGaAs/InGaAs pseudomorphic high electron mobility transistors
were investigated using current-voltage (I–V), capacitance-voltage (C-V), deep level transient spectroscopy (DLTS), and transconductance
dispersion measurements. After hot-electron stress, the three-terminal gate-drain breakdown characteristics were improved
and the gate-drain capacitance was decreased even though no difference was found in both DLTS and transconductance dispersion
results. These results suggest that hot electrons were trapped at the interface of the passivation layer, Si3N4, with AlGaAs, locating between gate and source/drain electrodes, leading to the increase of the depletion region under the
ungated region. On the other hand, the two-terminal gate-drain breakdown characteristics were deteriorated by hot-electron
stress. This was due to the reduction of the Schottky barrier height. 相似文献