Microstructural Characterization of Superplastic SiO2-doped TZP with a Small Amount of Oxide Addition

The microstructures of 5 wt% SiO₂-doped TZP, 5 wt% (SiO₂+ 2 wt% MgO)-doped TZP, and 5 wt% (SiO₂+ 2 wt% Al₂O₃)-doped TZP are characterized by high-resolution electron microscopy, energy-dispersive X-ray spectroscopy, and electron energy loss spectroscopy. An amorphous phase is formed at multiple grain junctions but not along the grain-boundary faces in these three materials. A small addition of MgO and Al₂O₃ into the SiO₂ phase results in a marked reduction in tensile ductility of SiO₂-doped TZP. This reduction seems to correlate with segregation of magnesium or aluminum ions at grain boundaries and a resultant change in the chemical bonding state.     

Microstructure and Bending Strength of 3Y-TZP/12Ce-TZP Ceramics Fabricated by Liquid-Phase Sintering at Low Temperature

With the addition of 1 wt% of MgO–Al₂O₃–SiO₂ glass as a sintering aid, 3Y-TZP/12Ce-TZP ceramics (composed from a mixture of 3Y-TZP and 12Ce-TZP powder) have been fabricated via liquid-phase sintering at 1250°–1400°C. In the sintered bodies, the grain growth of Y-TZP is almost unaffected, whereas that of Ce-TZP is inhibited. MgO·Al₂O₃ spinel and an amorphous phase that contains Al₂O₃ and SiO₂ (from the sintering aid) fully fill the grain junctions. The bending strength of 3Y-TZP/12Ce-TZP, when sintered at 1250°–1300°C, is ∼800–900 MPa, which is greater than that of 3Y-TZP ceramics without Ce-TZP particles. Ce-TZP grains and MgO·Al₂O₃ spinel in 3Y-TZP/12Ce-TZP ceramics may impede crack growth, and the bending strength is enhanced.     

Cubic-Formation and Grain-Growth Mechanisms in Tetragonal Zirconia Polycrystal

The microstructure in Y₂O₃-stabilized tetragonal zirconia polycrystal (Y-TZP) sintered at 1300°–1500°C was examined to clarify the role of Y³⁺ ions on grain growth and the formation of cubic phase. The grain size and the fraction of the cubic phase in Y-TZP increased as the sintering temperature increased. Both the fraction of the tetragonal phase and the Y₂O₃ concentration within the tetragonal phase decreased with increasing fraction of the cubic phase. Scanning transmission electron microscopy (SEM) and X-ray energy dispersive spectroscopy (EDS) measurements revealed that cubic phase regions in grain interiors in Y-TZP generated as the sintering temperature increased. High-resolution electron microscopy and nanoprobe EDS measurements revealed that no amorphous layer or second phase existed along the grain-boundary faces in Y-TZP and Y³⁺ ions segregated at their grain boundaries over a width of ∼10 nm. Taking into account these results, it was clarified that cubic phase regions in grain interiors started to form from grain boundaries and the triple junctions in which Y³⁺ ions segregated. The cubic-formation and grain-growth mechanisms in Y-TZP can be explained using the grain boundary segregation-induced phase transformation model and the solute drag effect of Y³⁺ ions segregating along the grain boundary, respectively.     

Effect of Bismuth of Oxide Content on the Sintering of Zinc Oxide

Densification and microstructure de velopment in Bi₂O₃-doped ZnO have been studied with a special emphasis on the effect of the Bi₂O₃ content. A small amount of Bi₂O₃ in ZnO (0.1 mol%) retarded densification, but the addition of Bi₂O₃ to more than 0.5 mol% promoted densification by the formation of a liquid phase above the eutectic temperature (∼740°C). The liquid phase increased grain-boundary mobility, which was responsible for the formation of intragrain pores and the decrease in the sintered density. The increase in the Bi₂O₃ content increased the probability of the formation of skeleton structure, which reduced the grain growth rate and the sintered density.     

High-Temperature Strength of Fluorine-Doped Silicon Nitride

High-purity Si₃N₄ (with 2.5 wt% glassy SiO₂) doped with F was prepared by immersion of the starting powder into dilute HF and hot isostatic pressing without sintering additives, using a glass encapsulation method. Oxygen content and cation impurity content were almost the same for the F-doped and undoped materials. However, X-ray fluorescence analysis revealed the order of 100 ppm of F in the doped material, and a considerable amount of F was detected from the amorphous SiO₂ phase at grain-boundary triple points by analytical transmission electron microscopy. High-resolution electron microscopy found that an amorphous intergranular film was omnipresent in both of the materials, with an equilibrium thickness of 10 ± 1 å. Subcritical crack-growth resistance and creep resistance at 1400°C were degraded significantly by the presence of F. Internal friction of doped materials exhibited a dear grain-boundary relaxation peak, which suggested that F was present in the intergranular film at the two-grain junctions; this decreased the grain-boundary viscosity considerably. The film thickness of the doped material showed no apparent chemical effects and was explained by taking into account competing repulsive forces acting normal to the film.     

Blocking Grain Boundaries in Yttria-Doped and Undoped Ceria Ceramics of High Purity

CeO₂ samples doped with 10, 1.0, and 0.1 mol% Y₂O₃ and undoped CeO₂ samples of high purity were studied by impedance spectroscopy at temperatures <800°C and under various oxygen partial pressures. According to microstructural investigations by SEM and analytical STEM (equipped with EDXS), the grain boundaries were free of any second phase, providing direct grain-to-grain contacts. An amorphous siliceous phase was detected at only a few triple junctions, if at all; as a result, its contribution to the grain-boundary resistance was negligible. Nevertheless, the specific grain-boundary conductivities were still 2–7 orders of magnitude lower than the bulk conductivities, depending on dopant concentration, temperature, and oxygen partial pressure. The charge carrier transport across the grain boundaries occurred only through the grain-to-grain contacts, whose properties were then determined by the space-charge layer. The space-charge potential in acceptor-doped CeO₂ was positive, causing the simultaneous depletion of oxygen vacancies and accumulation of electrons in the space-charge layer. The very low grain-boundary conductivities can be accounted for by the oxygen-vacancy depletion; the accumulation of electrons became evident in weakly doped and undoped CeO₂ at high temperatures and under low oxygen partial pressures.     

Structure and Viscosity of Grain Boundary in High-Purity SiAlON Ceramics

Three high-purity SiAlON materials (Si_{6− z} Al _z O _z N_{8− z} , z = 1, 2, 3) were characterized with respect to both structure and viscous behavior of internal grain boundaries. Internal friction experiments provided a direct measure of the intrinsic viscosity of grain boundaries and concurrently revealed the occurrence of a grain-boundary interlocking mechanism that suppressed sliding. A residual glass phase (consisting of aluminum-rich SiO₂) and nanometer-sized mullite residues were found at glassy triple-grain junctions of the z = 1 SiAlON. A low-melting intergranular phase dominated the high-temperature behavior of this material and caused grain-boundary sliding at temperatures as low as 1100°C. A quantitative analysis of the grain-boundary internal friction peak as a function of oscillation frequency indicated an intergranular film viscosity of log η∼ 7.5 Pa · s at 1100°C. Glass-free grain boundaries were a characteristic of SiAlON materials with z ≥ 2, which yielded a significant improvement in refractoriness as compared to the z = 1 SiAlON material. In these materials, relaxation resulting from grain-boundary sliding was suppressed, and the internal friction curve simply experienced an exponential-like increase.     

Grain-Boundary Microstructure and Chemistry of a Hot Isostatically Pressed High-Purity Silicon Nitride

Two high-purity Si₃N₄ materials were fabricated by hot isostatic pressing without the presence of sintering additives, using an amorphous laser-derived Si₃N₄ powder with different oxygen contents. High-resolution transmission electron microscopy and electron energy-loss spectroscopy (EELS) analysis of the Si₃N₄ materials showed the presence of an amorphous SiO₂ grain-boundary phase in the three-grain junctions. Spatially resolved EELS analysis indicated the presence of a chemistry similar to silicon oxynitride at the two-grain junctions, which may be due to partial dissolution of nitrogen in the grain-boundary film. The chemical composition of the grain-boundary film was SiN_xO_y, (x ∼ 0.53 and y ∼ 1.23), and the triple pocket corresponded to the amorphous SiO₂ containing ∼2 wt% nitrogen. The equilibrium grain-boundary-film thickness was measured and found to be smaller for the material with the lower oxygen content. This difference in thickness has been explained by the presence of the relatively larger calcium concentration in the material with the lower amount of SiO₂ grain-boundary phase, because the concentration of foreign ions has been shown to affect the grain-boundary thickness.     

Influence of Thermal Aging on Microstructural Development of Mullite Containing Alkalis

The influence of annealing treatments at temperatures of 900°C up to 1630°C on the microstructure of a 3Al₂O₃2SiO₂ mullite that contains a small amount of alkali (<3 wt%) has been studied. Annealing treatments of a base mullite material at the sintering temperature (1630°C) and at two temperatures lower (900°C) and higher (1200°C) than the lowest invariant points of the SiO₂-Al₂O₃-Na₂O system have been performed. Microstructures have been characterized by using scanning and transmission electron microscopy. Special attention has been given to grain-boundary characteristics-particularly the amount, composition, and distribution of the remaining glasses. Aging of this material at high temperature leads to a redistribution of the microstructure toward an equilibrium that involves the dissolution of the mullite grains, formation of a liquid phase, and liquid-phase grain growth. As the aging temperature increases, liquid-phase grain growth progressively overcomes the effect of the dissolution of mullite and a bimodal microstructure with an increasing number of large, tabular grains develops.     

Some Roles of MgO and TiO2 in Densification of a Sinterable Alumina

Sinterability of undoped, MgO-doped, and TiO₂-doped Al₂O₃ has been examined by applying reported sintering equations. The order of sinterability was MgO-doped ∼ undoped≪ TiO₂-doped Al₂O₃ in the initial and intermediate stages of sintering, but a relative sintered density at 1600°C for 1 h occurred in the order undoped < TiO₂-doped < MgO-doped AI₂O₃. The dispersion of thermal grooving angles increased in the order MgO-doped < undoped < TiO₂-doped Al₂O₃, The change of sinterability by the dopants is explained in terms of mobility of mass transfer estimated from a densification rate in the initial- and intermediate-stage sintering and of dispersed driving forces of densification and grain growth qualitatively evaluated from the width of the dispersion of thermal grooving angles.     

Colloidal Processing and Ionic Conductivity of Fine-Grained Cupric-Oxide-Doped Tetragonal Zirconia

CuO-doped tetragonal ZrO₂ (3-mol%-Y₂O₃-doped tetragonal zirconia, 3Y-TZ) green bodies were consolidated from zirconia slurries with Cu²⁺ by a pressure filtration method. The slurries were prepared by dispersing 3Y-TZ powder in a solution of [NH₄OH + NH₃NO₃] = 0.1 M at pH 11 and adding an appropriate amount of Cu(NO₃)·3H₂O solution. Green bodies with narrow pore-size distribution were obtained after cold isostatically pressing the pressure-filtrated bodies. Small amounts of CuO-doped samples were densified fully at 1200°C. The size of a grain of 0.16-mol%-CuO-doped 3Y-TZ sintered at 1200°C was 84 nm. Bulk and grain-boundary conductivities are measured by a complex impedance method. The bulk conductivity of the CuO-doped 3Y-TZ was almost equal to the undoped one, but the grain-boundary conductivity decreased with CuO addition.     

Singular Grain Boundaries in Alumina Doped with Silica

Pure Al₂O₃ powder compact sintered at 1400°C after adding 100 mol ppm of SiO₂ shows grain boundaries that are flat, even across the triple junctions. TEM observations show that these flat grain boundaries are parallel to the basal planes of the grains on one side. These flat grain boundaries must be singular. At such a low SiO₂ concentration and a low temperature, it is very unlikely that any liquid phase is present at these grain boundaries to cause such flat boundary shapes.     

Grain-Boundary Viscosity of Polycrystalline Silicon Carbides

Internal friction experiments were conducted on three SiC polycrystalline materials with different microstructural characteristics. Characterizations of grain-boundary structures were performed by high-resolution electron microscopy (HREM). Observations revealed a common glass-film structure at grain boundaries of two SiC materials, which contained different amounts of SiO₂ glass. Additional segregation of residual graphite and SiO₂ glass was found at triple pockets, whose size was strongly dependent on the amount of SiO₂ in the material. The grain boundaries of a third material, processed with B and C addition, were typically directly bonded without any residual glass phase. Internal friction data of the three SiC materials were collected up to similar/congruent2200°C. The damping curves as a function of temperature of the SiO₂-bonded materials revealed the presence of a relaxation peak, arising from grain-boundary sliding, superimposed on an exponential-like background. In the directly bonded SiC material, only the exponential background could be detected. The absence of a relaxation peak was related to the glass-free grain-boundary structure of this polycrystal, which inhibited sliding. Frequency-shift analysis of the internal friction peak in the SiO₂-containing materials enabled the determination of the intergranular film viscosity as a function of temperature.     

Grain-Boundary Relaxation in High-Purity Silicon Nitride

Internal friction, torsional creep, and shear modulus relaxation experiments were conducted on a model Si₃N₄ polycrystalline material, which contained a continuous amorphous film of pure SiO₂ at the grain boundary. Internal friction experiments were performed in the frequency range between 3 and 13 Hz, in 5 Pa of nitrogen atmosphere. Very high temperatures (up to 2000°C) could be applied for the first time by using a newly developed torsional pendulum apparatus. This apparatus was also capable of precise torsional strain measurements under static-load conditions. The internal friction curves at various frequencies were generally found to consist of a grain-boundary peak super-imposed on an exponential-like background. The peak, of anelastic diffusive origin, was centered in the temperature range of 1612–1710°C depending on the frequency of the measurement, namely within an interval of about 100°C below the nominal melting point of the pure SiO₂ phase (i.e., ∼ 1730°C). The background was instead found to be of viscoelastic nature. A common micromechanical origin between the creep plastic strain and the internal friction background curves was identified and the data could be fitted by the same Arrhenius plot. Structural and chemical characterization of internal grain boundaries was performed by high-resolution electron microscopy (HREM) in addition to electron energy-loss spectroscopy (EELS). A small amount of nitrogen was detected within the amorphous residue along grain boundaries. According to the above set of microstructural/chemical and mechanical data, the viscosity properties of the intergranular phase were assessed and the sliding mechanism between adjacent Si₃N₄ grains was modeled.     

Imaging Secondary-Ion Mass Spectroscopy Observation of the Scavenging of Siliceous Film from 8-mol%-Yttria-Stabilized Zirconia by the Addition of Alumina

The scavenging of a resistive siliceous phase via the addition of Al₂O₃ was studied, using imaging secondary-ion mass spectroscopy (SIMS), given the improved grain-boundary conductivity in 8-mol%-yttria-stabilized zirconia (8YSZ). The grain-boundary resistivity in 8YSZ decreased noticeably with the addition of 1 mol% of Al₂O₃. Strong SiO₂ segregation at the grain boundaries was observed in a SIMS map of pure 8YSZ that contained 120 ppm of SiO₂ (by weight). The addition of 1 mol% of Al₂O₃ caused the SiO₂ to gather around the Al₂O₃ particles. The present observations provided direct and visual evidence of SiO₂ segregation at the grain boundaries (which had a deleterious effect on grain-boundary conductivity) and the scavenging of SiO₂ via Al₂O₃ addition.     

Viscous Slip along Grain Boundaries in Chlorine-Doped Silicon Nitride

The effect of chlorine doping on the anelastic-relaxation and torsional-creep behavior of a silicon nitride (Si₃N₄) polycrystalline body was studied. Two model polycrystals—one undoped and the other doped with a small fraction of chlorine—were investigated. Their microstructures consisted of equiaxed and well-faceted Si₃N₄ grains whose boundaries were separated by a continuous, nanometer-sized film of silica (SiO₂) glass. The actual presence of chlorine in the doped polycrystal was ascertained by ion chromatography and is thought to be enriched at the grain boundaries. The effect of chlorine on the intergranular film structure was characterized by high-resolution electron microscopy. The micromechanical response of the SiO₂ grain boundary under shear stress was monitored up to very high temperatures (i.e., ∼2000°C) by internal-friction and torsional-creep experiments. The presence of the chlorine dopant, which is a network modifier of SiO₂ glass that also causes a widening of the grain-boundary film, significantly lowered the bulk viscosity of the residual glass. As a consequence of the change in grain-boundary chemistry, the internal-friction curve of the chlorine-doped material shifted toward lower temperatures and the torsional-creep rate markedly increased, as compared to the undoped material. According to a viscoelastic model of the Si3N4 polycrystal, the internal-friction data resulted as a superposition of two individual components: (i) a relaxation peak that is related to the anelastic slip mechanism along grain boundaries and (ii) a background component that results from an irreversible diffusional-creep mechanism.     

The System Al2O3-Cr2O3-Sio2

Liquidus phase equilibrium data are presented for the system Al₂O₃-Cr₂O₃-SiO₂. The liquidus diagram is dominated by a large, high-temperature, two-liquid region overlying the primary phase field of corundum solid solution. Other important features are a narrow field for mullite solid solution, a very small cristobalite field, and a ternary eutectic at 1580°C. The eutectic liquid (6Al₂O₃-ICr₂O₃-93SiO₂) coexists with a mullite solid solution (61Al₂O₃-10Cr₂O₃-29SiO₂), a corundum solid solution (19Al₂O₃-81Cr₂O₃), and cristobalite (SO₂). Diagrams are presented to show courses of fractional crystallization, courses of equilibrium crystallization, and phase relations on isothermal planes at 1800°, 1700°, and 1575°C. Tie lines were sketched to indicate the composition of coexisting mullite and corundum solid solution phases.     

Cation Interdiffusion and Phase Stability in Polycrystalline Tetragonal Ceria–Zirconia–Hafnia Solid Solution

Zr–Hf interdiffusions were carried out at 1350° to 1520°C for polycrystalline tetragonal solid solutions of 14CeO₂·86(Zr_{1- x} Hf _x )O₂ with X = 0.02 and 0.10. Lattice and grain-boundary interdiffusion parameters were calculated from the concentration distributions by using Oishi and Ichimura's equation. Lattice interdiffusion coefficients were described by D = 3.0 × 10³ exp[-623 (kJ/mol)/ RT ] cm²/s and grain-boundary interdiffusion parameters by δ D ' = 0.29 exp[-506 (kJ/mol)/ RT ] cm³/s. The cation diffusivity was lower than the anion diffusivity. The results were compared with diffusivities in the fluorite-cubic solid solution. The critical grain radii for stabilization of the tetragonal phase in CeO₂-doped ZrO₂ were 11 and 6 μm for the solutions with 2 and 10 mol% HfO₂ substitution, respectively, both of which are much greater than in the Y₂O₃-doped ZrO₂ solid solution.     

Grain Growth in Two-Phase Ceramics: Al2O3 Inclusions in ZrO

The effect of Al₂O₃ inclusions with a greater average size (0.6 μm) than the average particle size of the major phase powder (<0.1 μm) on grain gowth was examined by sintering ZrO₂/Al₂O₃ composites (0,3,5,10, and 20 vol%) at 1400°C and then heat-treating at temperatures up to 1700°C. Normal grain growth was observed for all conditions. The inclusions appeared to have no effect on grain growth until the ZrO₂ grain size was ∼1.5 times the average inclusion size. Grain growth inhibition increased with volume fraction of the Al₂O₃ inclusion phase. At temperatures 1600°C, the inclusions were relatively immobile and most were located within the ZrO₂ grains for volume fractions <0.20; at higher temperatures, the inclusions could move with the grain boundary to coalesce. Grain growth was less inhilited when the inclusions could move with the boundaries, resulting in a larger increase in grain size than observed at lower temperatures. Analogies between mobile voids, entrapped within grain at lower temperature due to abnormal grain growth during the last state of sintering, and the observations concerning the mobile inclusions are made suggesting that grain-boundary movement can "sweep" voids to grain boundaries and eventually of four-grain junctions, where they are more likely to disappear by mass transport.     

Mechanisms of Dopant-Induced Changes in Intergranular SiO2 Viscosity in Polycrystalline Silicon Nitride

Mechanical spectroscopic methods and first-principles density functional calculations were applied to attempt a quantitative analysis of both atomic structure and viscous behavior of Si₃N₄ grain boundaries. In particular, the effect on the intergranular structure/viscosity of small fractions of selected anion/cation dopants was examined in comparison with the undoped polycrystal. From the point of view of mechanical spectroscopy, emphasis was placed on the morphologic analysis, as a function of frequency of oscillation, of a relaxation peak that originates from grain-boundary sliding. The morphologic characteristics of the grain-boundary peak clearly revealed the presence of significant chemical gradients among different grain boundaries for particular dopants (e.g., Cl and Ba). On dopant addition, a reduction in activation energy for viscous intergranular flow was observed which broadened the grain-boundary peak. Chemical inhomogeneities also broadened the peak shape by generating a spectrum of activation energies. First-principles density functional calculations were conducted for cluster fragment models representative of the amorphous SiO₂ intergranular film. The results explicitly showed the mechanism by which the respective dopants break bonds in the host, an action that directly reduces the viscosity of the SiO₂ film. These complementary theoretical studies assist understanding and atomic-scale rationalization of the differences in segregation behavior of different dopants incorporated into the SiO₂ film.