Phase Equilibria in the Spinel Region of the System FeO-Fe2O3-Al2O3

Phase relations in the spinel region of the system FeO-Fe₂O₃-Al₂O₃ were determined in CO₂ at 1300°, 1400°, and 15000°C and for partial oxygen pressures of 4 × 10⁻⁷ and 7 × 10⁻¹⁰ atmospheres at 15OO°C. The spinel field extends continuously from Fe₃O_4-x to FeAl₂O_4+z.     

Interdiffusion in the System MgO-MgAl2O4

Interdiffusion coefficients in single-crystal MgO were determined using an MgO-MgAl₂O₄ diffusion couple. For a concentration of 1 mol% Al₂O₃ in MgO, the interdiffusion coefficient can be expressed as D =2.0±0.2 exp (−76,000±3,000/ RT ) for the MgO-MgAl₂O₄ couple. This relation compares well with previous measurements in the MgO-Al₂O₃ system. The interdiffusion coefficients, which increased with the mol fraction of cation vacancies, were in the range of 10⁻⁸ to 10⁻¹⁰ cm²s⁻¹ for the concentrations and temperatures studied. Diffusion was enhanced below 1640°C if powdered MgAl₂O₄ was used. Self-diffusion coefficients for Al³⁺ ions in MgO were calculated; Al³⁺ diffuses faster than Cr³⁺ in MgO.     

Thermal Expansion of the Low-Temperature Form of BaB2O4

Thermal expansion of the low-temperature form of BaB₂O₄ (β-BaB₂O₄) crystal has been measured along the principal crystallographic directions over a temperature range of 9° to 874°C by means of high-temperature X-ray powder diffraction. This crystal belongs to the trigonal system and exhibits strongly anisotropic thermal expansions. The expansion along the c axis is from 12.720 to 13.214 Å (1.2720 to 1.3214 nm), whereas it is from 12.531 to 12.578 Å (1.2531 to 1.2578 nm) along the a axis. The expansions are nonlinear. The coefficients A, B , and C in the expansion formula L _t = L ₀(1 + At + Bt ²+ Ct ³) are given as follows: a axis, A = 1.535 × 10⁻⁷, B = 6.047 × 10⁻⁹, C = -1.261 × 10⁻¹²; c axis, A = 3.256 × 10⁻⁵, B = 1.341 × 10⁻⁸, C = -1.954 × 10⁻¹²; and cell volume V, A = 3.107 × 10⁻⁵, B = 3.406 × 10⁻⁸, C = -1.197 × 10⁻¹¹. Based on α _t = (d L _t /d t )/ L ₀, the thermal expansion coefficients are also given as a function of temperature for the crystallographic axes a , c , and cell volume V.     

Thermal Expansion of SrY2O4

Crystals of SrY₂O₄ (space group Pnam ) were examined by high-temperature powder X-ray diffractometry to determine the changes in unit-cell dimensions with temperature. The individual cell dimensions linearly increased with increasing temperature up to 1473 K. The expansion coefficients (K⁻¹) were 1.263(8) × 10⁻⁵ along the a- axis, 7.46(6) × 10⁻⁶ along the b- axis, and 9.93(10) × 10⁻⁶ along the c- axis. The coefficient of mean linear expansion was 1.001(8) × 10⁻⁵ K⁻¹.     

Preliminary Observations on Phase Relations in the "V2O3–FeO" and V2O3–TiO2 Systems from 1400°C to 1600°C in Reducing Atmospheres

Phase relations within the "V₂O₃–FeO" and V₂O₃–TiO₂ oxide systems were determined using the quench technique. Experimental conditions were as follows: partial oxygen pressures of 3.02 × 10⁻¹⁰, 2.99 × 10⁻⁹, and 2.31 × 10⁻⁸ atm at 1400°, 1500°, and 1600°C, respectively. Analysis techniques that were used to determine the phase relations within the reacted samples included X-ray diffractometry, electron probe microanalysis (energy-dispersive spectroscopy and wavelength-dispersive spectroscopy), and optical microscopy. The solid-solution phases M₂O₃, M₃O₅, and higher Magneli phases (M _n O_{2 n −1}, where M = V, Ti) were identified in the V₂O₃–TiO₂ system. In the "V₂O₃–FeO" system, the solid-solution phases M₂O₃ and M₃O₄ (where M = V, Ti), as well as liquid, were identified.     

Deviation from Stoichiometry in Cr2O3 at High Oxygen Partial Pressures

The deviation from stoichiometry, δ, in Cr₂−δO₃ was measured by a tensivolumetric method in the high pO₂ range of ≊10⁴ to 10⁴ Pa at 1100°C. The value of δ, or chromium vacancy concentration, was≊9×10⁻⁵ mol/mol Cr₂O₃ in air for Cr₂O₃ with 99.999% purity. The chemical diffusion coefficient, DT, determined from equilibration data was ≊4.6× cm²·s⁻¹ at 1100°C for pO₂= 2.2 ×10¹ Pa. The self-diffusion coefficient of Cr ions was calculated from and δ and found to be≊1.6×10-17 cm²-s⁻¹, in good agreement with recently measured values.     

Strength of Hot Isostatically Pressed Si3N4 After Heat Treatment in Ar-O2 and H2-H2O

The effects of heat treatment in Ar-O₂ and H₂-H₂O atmospheres on the flexural strength of hot isostatically pressed Si₃N₄ were investigated. Increases in room-temperature strength, to values significantly above that of the aspolished material, were observed when the Si₃N₄ was exposed at 1400°C to (1) H₂ with water vapor pressure ( P _H2O) greater than 1 × 10⁻⁴ MPa or (2) Ar with oxygen partial pressure ( P _O2) of between 7 × 10⁻⁶ and 1.5 × 10⁻⁵ MPa. However, the strength of the material was degraded when the P _H2O in H₂ was lower than 1 × 10⁻⁴ MPa, and essentially unaffected when the P _O2 in Ar was higher than 1.5 × 10⁻⁵ MPa. We suggest that the observed strength increases are the result of strength-limiting surface flaws being healed by a Y₂Si₂O₇ layer formed during exposure.     

Growth of Single-Crystal and Polycrystalline Thin Films of MgAl2O4 and MgFe2O4

Single-crystal and polycrystalline films of Mg-Al₂O₄ and MgFe₂O₄ were formed by two methods on cleavage surfaces of MgO single crystals. In one procedure, aluminum was deposited on MgO by vacuum evaporation. Subsequent heating in air at about 510°C formed a polycrystalline γ-Al₂O₈ film. Above 540°C, the γ-Al₂O, and MgO reacted to form a single-crystal MgAl₂O₄ film with {001} MgAl₂O₄‖{001} MgO. Above 590°C, an additional layer of MgAl₂O₄, which is polycrystalline, formed between the γ-Al₂O₃ and the single-crystal spinel. Polycrystalline Mg-Al₂O₄ formed only when diffusion of Mg²⁺ ions proceeded into the polycrystalline γ-Al₂O₃ region. Corresponding results were obtained for Mg-Fe₂O₄. MgAl₂O₄ films were also formed on cleaved MgO single-crystal substrates by direct evaporation, using an Al₂O₃ crucible as a source. Very slow deposition rates were used with source temperatures of ∼1350°C and substrate temperatures of ∼800°C. Departures from single-crystal character in the films may arise through temperature gradients in the substrate.     

Electrical Conductivity of MgAl2O4 and Y3A15O12

The electrical conductivities of single crystal and polycrystalline MgAl₂O₄ and Y₃Al₅O₁₂ were measured to 1260 K using a three-contact, guard-ring technique. The electrical conduction mechanisms change with temperature, with anomalous oxygen pressure and time-dependent inflections in log σ versus T⁻¹ curves between 900 to 1000 K. The conduction processes of Y₃Al₅O₁₂ and MgAl₂O₄ appear to be similar and possibly related to A1³⁺ ion diffusion.     

Massive Transformation in the Y2O3-Bi2O3 System

Cubic solid solutions in the Y₂O₃-Bi₂O₃ system with ∼25% Y₂O₃ undergo a transformation to a rhombohedral phase when annealed at temperatures ≤ 700°C. This transformation is composition-invariant and is thermally activated, and the product phase can propagate across matrix grain boundaries, indicating that there is no special crystallo-graphic orientation relationship between the product and the parent phases. Based on these observations, it is proposed that cubic → rhombohedral phase transformation in the Y₂O₃-Bi₂O₃ system is a massive transformation. Samples of composition 25% Y₂O₃-75% Bi₂O₃ with and without aliovalent dopants were annealed at temperatures ≤ 700°C for up to 10000 h. ZrO₂ as a dopant suppressed while CaO and SrO as dopants enhanced the kinetics of phase transformation. The rate of cubic/rhombohedra1 interface migration (growth rate or interface velocity) was also similarly affected by the additions of dopants; ZrO₂ suppressed while CaO enhanced the growth rate. Diffusion studies further showed that ZrO₂ suppressed while CaO enhanced cation interdiffusion coefficient. These observations are rationalized on the premise that cation interstitials are more mobile compared to cation vacancies in cubic bismuth oxide. The maximum growth rate measured was ∼10⁻¹⁰ m/s, which is orders of magnitude smaller than typical growth rates measured in metallic alloys. This difference is explained in terms of substantially lower diffusion coefficients in these oxide systems compared to metallic alloys.     

Characterization of the Thermally Contracting Tungstates Ta22W4O67, Ta2WO8, and Ta16W18O94

An investigation of the properties of high-purity (>99 wt%) tantalum tungstates (Ta₂₂W₄O₆₇, Ta, WO₈, and Ta₁₆W₁₈O₉₄) included determination of density (bulk and theoretical), refined lattice constants, maximum use temperatures, micro-hardness, heat capacity, thermal expansion (contraction) and diffusivity, calculated thermal conductivity, and electrical resistivity. Usable to ∼ 1700 K in air or inert atmospheres, these tantalum tungstates have theoretical densities of 7.3 to 8.5 g/cm³, are relatively soft (120 to 655 kg/mm² hardnesses), and are electrical insulators (6× 10³ to 2× 10⁸Ω^.cm resistivities). The distinguishing properties of the materials are their thermal expansion (average CTE values from + 0.6×10⁻⁸/K to −5.1× 10⁻⁶/K at 293 to 1273 K), thermal expansion hysteresis with minimal observable microcracking, and thermal diffusivity     

Thermal Expansion of Pb3O4

Thermal expansion of Pb₃O₄ was investigated by high-temperature X-ray diffraction. The coefficient in the a ₀ direction is 14.6×10⁻⁶/°C. Expansion in the c₀ direction is 32% greater, with a coefficient of 19.3×10⁻⁶/°C. Coefficients of expansion are linear from 25° to 490°C and are comparable with those of tetragonal and orthorhombic PbO.     

Effect of Alkali Metal Oxide Addition on the Sinterability of MgO–B2O3–Al2O3 Glass–Al2O3 Filler Composites

The sintering of a composite of MgO–B₂O₃–Al₂O₃ glass and Al₂O₃ filler is terminated due to the crystallization of Al₄B₂O₉ in the glass. The densification of a composite of MgO–B₂O₃–Al₂O₃ glass and Al₂O₃ filler using pressureless sintering was accomplished by lowering the sintering temperature of the composite. The sintering temperature was lowered by the addition of small amounts of alkali metal oxides to the MgO–B₂O₃–Al₂O₃ glass system. The resultant composite has a four-point bending strength of 280 MPa, a coefficient of thermal expansion (RT—200°C) of 4.4 × 10⁻⁶ K⁻¹, a dielectric constant of 6.0 at 1 MHz, porosity of approximately 1%, and moisture resistance.     

Exsolution of β-Ga2O3 Crystalline Solutions in the System MgAl2O3-Ga2O3

The subsolidus phase equilibrium diagram for the pseudobinary join MgAl₂O₄-Ga₂O₃ was determined. The shape of the exsolution boundary was obtained by heat-treating samples pre- equilibrated at 1600°C. Crystalline solubility of Ga₂O₃ in MgAl₂O₄ decreased from 73 mole % at 1600°C to 55 mole % at 1200°C. The crystalline solution was formed by the replacement of Mg²⁺ions by Ga³⁺ ions to produce a cation defect spinel. The phase precipitated was the mono-clinic δ-Ga₂O₃ (=δ-Al₂O₃ structure). Changes in the ratios of relative X-ray diffraction intensities indicated that the crystalline solutions also disorder with temperature.     

Kinetics of NiCr2O4 Formation and Diffusion of Cr3+ Ions in NiO

The reaction kinetics for NiCr₂O₄ formation and the diffusion of Cr³⁺ ions into single-crystal NiO were studied between 1300° and 1600°C in air. The experimental activation energy for NiCr₂O₄ formation was about 83 kcal/mol. After incubation, NiCr₂O₄ formed by a diffusion-controlled process. The origin of pores at the NiO/NiCr₂O₄ interface is discussed. The concentration profiles of Cr³⁺ in NiO were linear because the interdiffusion coefficient was directly proportional to the mol fraction Cr³⁺. Theoretical considerations indicate that the interdiffusion coefficient equals 3/2 the self-diffusion coefficient of Cr³⁺, which is rate-determining. The interdiffusion coefficient at 1 mol% Cr₂O₃ can be expressed as =4×10⁻³ exp (−55,000/RT) cm² s⁻¹.     

Modification of MgAl2O4 Microwave Dielectric Ceramics by Zn Substitution

MgAl₂O₄ microwave dielectric ceramics were modified by Zn substitution for Mg, and their dielectric characteristics were evaluated, along with their structures. Dense (Mg_{1− x} Zn _x )Al₂O₄ ceramics were obtained by sintering at 1550°–1650°C in air for 3 h, and the (Mg_{1− x} Zn _x )Al₂O₄ solid solution was determined in the entire composition range. With Zn substitution for Mg, the dielectric constant ɛ of MgAl₂O₄ just varied from 7.90 to 8.56, while the Q × f value had significantly improved up to a maximal value of 106 000 GHz at x =1.0. Moreover, the τ_f of MgAl₂O₄ ceramics had declined from −73 to −63 ppm/°C.     

Compressive Creep and Oxidation Resistance of an Si3N4 Material Fabricated in the System Si3N4-Si2N2O-Y2Si2O7

The compressive creep behavior and oxidation resistance of an Si₃N₄/Y₂Si₂O₇ material (0.85Si₃N₄+0.10SiO₂+0.05Y₂O₃) were determined at 1400°C. Creep re sistance was superior to that of other Si₃N₄ materials and was significantly in creased by a preoxidation treatment (1600°C /120 h). An apparent parabolic rate constant of 4.2 × 10⁻¹¹ kg²·m-⁴·s⁻¹ indicates excellent oxidation resistance.     

Synthesis, Structure Determination, and Aqueous Durability of Cs2ZrSi3O9

The structure of Cs₂ZrSi₃O₉ synthesized using a sol–gel method was determined from the Rietveld refinement of experimental powder X-ray diffraction data. The refinement confirmed that this compound was isostructural with wadeite: its structure was hexagonal (space group P 6₃/ m ), and its lattice parameters were a = 7.2303(2) Å and c = 10.2682(4) Å. The aqueous durability of Cs₂ZrSi₃O₉ varied, depending on the solution conditions. In modified leach tests with buffered (pH 7) and unbuffered solutions, the 7-d cesium release rates were <1.2 × 10⁻⁴ g·(m²·day)⁻¹, which indicated high aqueous durability. However, in unsaturated, unbuffered solutions with a pH of 9–10, the durability was much lower, with 7-d cesium release rates of 2.2 × 10⁻³ g·(m²·day)⁻¹. The ability of this material to retain cesium in aqueous environments can be explained by its condensed ring structure, in which the size of the channel openings is smaller than the diameter of a Cs⁺ ion. However, dissolution of the network silicate occurred at high pH, which resulted in the release of cesium.     

Vapor Pressure of Barium and Copper Components in YBa2Cu3O7−x Superconductor Ceramics

Purified air is passed over a specimen of YBa₂Cu₃O_{7– x} at 890°C; the vaporized substances are condensed in a pure alumina tube, then subjected to inductively controlled plasma analysis. Vapor pressure values of 2.5 × 10⁻⁵ Pa for BaO( g ), 1.2 × 10⁻⁴ Pa for Cu( g ), and 2.2 × 10⁻⁵ Pa for CuO( g ) are obtained under 2.1 × 10⁴ Pa (0.21 bar) of oxygen pressure. No Y vapor is detected at this temperature.     

Electrical Conduction in Single-Crystal and Polycrystalline Al2O3 at High Temperatures

The electrical conductivity and ion/electron transference numbers in Al₃O₃ were determined in a sample configuration designed to eliminate influences of surface and gas-phase conduction on the bulk behavior. With decreasing O₂ partial pressure over single-crystal Al₂O₃ at 1000° to 1650°C, the conductivity decreased, then remained constant, and finally increased when strongly reducing atmospheres were attained. The intermediate flat region became dominant at the lower temperatures. The emf measurements showed predominantly ionic conduction in the flat region; the electronic conduction state is exhibited in the branches of both ends. In pure O₂ (1 atm) the conductivity above 1400°C was σ≃3×10³ exp (–80 kcal/ RT ) Ω⁻¹ cm⁻¹, which corresponds to electronic conductivity. Below 1400°C, the activation energy was <57 kcal, corresponding to an extrinsic ionic condition. Polycrystalline samples of both undoped hot-pressed Al₂O₃ and MgO-doped Al₂O₃ showed significantly higher conductivity because of additional electronic conduction in the grain boundaries. The gas-phase conduction above 1200°C increased drastically with decreasing O₂ partial pressure (below 10⁻¹⁰ atm).